WO2014119146A1 - 発光装置の製造方法及び発光装置 - Google Patents

発光装置の製造方法及び発光装置 Download PDF

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WO2014119146A1
WO2014119146A1 PCT/JP2013/083430 JP2013083430W WO2014119146A1 WO 2014119146 A1 WO2014119146 A1 WO 2014119146A1 JP 2013083430 W JP2013083430 W JP 2013083430W WO 2014119146 A1 WO2014119146 A1 WO 2014119146A1
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Prior art keywords
light emitting
wire
emitting element
light
emitting device
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PCT/JP2013/083430
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English (en)
French (fr)
Inventor
和雄 玉置
太田　将之
山口　真司
賢一 栗田
正毅 辰巳
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シャープ株式会社
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Priority to JP2014559515A priority Critical patent/JP6105638B2/ja
Priority to CN201380069511.2A priority patent/CN104904025B/zh
Priority to US14/653,351 priority patent/US20150357527A1/en
Publication of WO2014119146A1 publication Critical patent/WO2014119146A1/ja

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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85186—Translational movements connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85986—Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • the present invention relates to a method for manufacturing a light emitting device and a light emitting device manufactured using the method.
  • a light emitting device using a light emitting element such as an LED (Light Emitting Diode) chip
  • a light emitting device using an LED chip protects the LED chip itself and the wires electrically connected to the LED chip, improves the extraction efficiency of light emitted by the LED chip, and disperses the phosphor.
  • a conventional light emitting device is described in Patent Document 1.
  • the light emitting device (light emitting element package) described in Patent Document 1 has a light emitting element mounted on a substrate (reflective cup) disposed at the bottom of a frame (body) and is separated from other substrates separated from the light emitting element.
  • the light emitting elements are electrically connected through wires.
  • a material having a relatively large coefficient of thermal expansion may be used for the sealing material covering the light emitting element.
  • the light emitting device may be subjected to temperature changes or repeated temperature changes due to the external environment or lighting or extinguishing of the light emitting elements. If the sealing material repeatedly expands and contracts due to this temperature change, stress may be repeatedly applied to the wire. There is concern that this repeated stress adversely affects the recrystallized region of the wire and the wire is more likely to break.
  • the present invention has been made in view of the above points, and provides a method for manufacturing a light-emitting device capable of suppressing breakage of a wire bonded to a light-emitting element as much as possible, and a light-emitting device manufactured using the method.
  • the purpose is to do.
  • a method for manufacturing a light-emitting device includes a device substrate on which a light-emitting element is mounted, and a terminal portion that is separated from the device substrate and is electrically connected to the light-emitting element by a wire.
  • a frame body having a height from a connection surface of the wire of the terminal portion to an upper edge of the frame body lower than a height from an upper surface of the light emitting element to an upper edge of the frame body.
  • a frame forming step to form a bump forming step of forming a bump on an electrode of the light emitting element to which the wire is connected, a first bonding step of first joining one end of the wire to the terminal portion, A second bonding step of secondly bonding the other end of the wire to the bump; and a sealing step of sealing the light emitting element by filling the inside of the frame with a sealing material.
  • the thickness of the sealing material above the first bonding portion of the wire is thinner than the thickness of the sealing material above the second bonding portion of the wire. Therefore, the influence of expansion and contraction of the sealing material received at the first bonding portion of the wire, that is, the recrystallization region of the wire is reduced.
  • the bump forming step is characterized in that the bump is formed on an n electrode of the light emitting element.
  • the present invention is characterized by a light emitting device manufactured by using the above method.
  • the configuration of the present invention it is possible to provide a method for manufacturing a light emitting device capable of suppressing the breakage of the wire bonded to the light emitting element as much as possible, and a light emitting device manufactured using the method.
  • FIG. 1 is a cross-sectional view of a light emitting device
  • FIG. 2 is a cross-sectional view of a light emitting element of the light emitting device.
  • the light emitting device 1 includes a light emitting element 20 mounted on the frame 2 as shown in FIG.
  • the light emitting element 20 is, for example, an LED chip formed using a semiconductor.
  • the type of semiconductor constituting the LED chip is appropriately determined based on, for example, the desired wavelength of emitted light from the LED chip.
  • an LED chip having an arbitrary wavelength of ultraviolet, blue, green, red, or infrared may be used.
  • a plurality of semiconductor layers are crystal-grown on the upper surface of an element substrate 21 made of, for example, sapphire as shown in FIG.
  • an element substrate 21 made of, for example, sapphire as shown in FIG.
  • a buffer layer 22 an n-type semiconductor layer 23, an active layer 24 that is a light emitting layer, and a p-type semiconductor layer 25 are sequentially stacked.
  • a p-electrode 26 is provided on the p-type semiconductor layer 25.
  • a part of the n-type semiconductor layer 23, the active layer 24, and the p-type semiconductor layer 25 are etched in a mesa shape, and a part of the n-type semiconductor layer 23 is exposed upward.
  • An n-electrode 27 is provided on the exposed n-type semiconductor layer 23.
  • a protective film 28 is provided on almost the entire top surface of the light emitting element 20 so that the p-electrode 26 and the n-electrode 27 are exposed.
  • the frame 2 has a substantially rectangular parallelepiped shape as shown in FIG.
  • the recess 3 has a side surface that is inclined from the inside of the frame body 2 toward the upper surface of the frame body 2 in FIG.
  • the light emitting element 20 is disposed at the inner bottom of the recess 3.
  • the frame body 2 is preferably made of a material having higher reflectivity.
  • a hard white resin such as polyphthalamide resin or polyethylene terephthalate resin, aluminum oxide (Al A ceramic made of a sintered body of 2 O 3 ) may be used.
  • An apparatus substrate 4 and a terminal portion 5 are laid on the frame 2.
  • the device substrate 4 and the terminal portion 5 are configured as a pair so as to function as positive and negative electrodes, and are separated from each other with an insulating portion 2a being a part of the frame body 2 interposed therebetween.
  • Both the device substrate 4 and the terminal portion 5 are provided so that one end portions thereof are located on the inner bottom portion of the recess 3.
  • the device substrate 4 and the terminal portion 5 may be formed integrally with the frame body 2.
  • the light emitting element 20 is placed on the upper surface of the apparatus substrate 4 in FIG.
  • the light emitting element 20 is electrically connected to the terminal portion 5 and the device substrate 4 by wires 6a and 6b.
  • the height H1 from the connection surface of the wire 6a of the terminal portion 5 to the upper edge 2b of the frame body 2 of the device substrate 4 and the terminal portion 5 is from the upper surface of the light emitting element 20 to the upper edge 2b of the frame body 2. It is formed to be lower than the height H2.
  • the periphery of the light emitting element 20 and the wires 6 a and 6 b is covered with the sealing material 7.
  • the sealing material 7 is filled in the recess 3 so as to fill the recess 3 of the frame body 2.
  • the light emitted from the light emitting element 20 is emitted from the light extraction surface 7a which is the upper surface in FIG.
  • the sealing material 7 is made of, for example, a thermosetting epoxy resin or a silicone resin. Thereby, the reliability and transparency of the sealing material 7 are improved, and the light extraction efficiency of the light emitting device 1 can be improved. Moreover, you may mix additives, such as a fluorescent substance and a dispersing agent, in the sealing material 7, for example.
  • Example 1 of the method for manufacturing the light emitting device 1 will be described with reference to FIGS. 3 to 9 are cross-sectional views for explaining a method for manufacturing the light-emitting device 1.
  • FIGS. 1 and 2 may be referred to as appropriate.
  • the frame body 2 is formed integrally with the device substrate 4 and the terminal portion 5 by, for example, insert molding.
  • the device substrate 4 and the terminal portion 5 are separated from each other with the insulating portion 2a interposed therebetween.
  • the device substrate 4 and the terminal portion 5 have a height H1 from the connection surface of the wire 6 a (see FIG. 1) of the terminal portion 5 to the upper edge 2 b of the frame body 2. It is formed to be lower than the height H2 from the upper surface to the upper edge 2b of the frame body 2.
  • the die bond material 31 is supplied to the surface of the device substrate 4 exposed at the inner bottom of the recess 3 of the frame 2, and the light emitting element 20 is mounted thereon. As a result, the light emitting element 20 is fixed to the surface of the device substrate 4.
  • bumps 32 are formed on the n-electrode 27 (see FIG. 2) of the light emitting element 20 in the bump forming step shown in FIG.
  • the bump 32 is for the wire 6a extending from the light emitting element 20 to the terminal portion 5 spaced apart from the insulating portion 2a.
  • a bonding process is performed in which wires 6a for electrically connecting the light emitting element 20 and the terminal portion 5 are joined to each other.
  • one end of the wire 6a is first formed, for example, by forming a ball portion 33 and bonded to the terminal part 5, and the other end of the wire 6a is secondly bumped to the light emitting element 20.
  • a second bonding step for bonding to 32 is performed.
  • wires 6b for electrically connecting the p-electrode 26 (see FIG. 2) of the light-emitting element 20 and the device substrate 4 are bonded to each other.
  • one end of the wire 6b is firstly formed with, for example, a ball portion 34 and bonded to the p-electrode 26 of the light emitting element 20, and the other end of the wire 6b is secondly formed with, for example, a ball portion 35. Then, it is bonded to the device substrate 4.
  • the sealing material 7 is filled into the recess 3 inside the frame body 2.
  • a predetermined amount of the sealing material 7 is dropped toward the light emitting element 20 using, for example, a dispenser. Thereby, the light emitting element 20 is sealed with the sealing material 7.
  • Example 2 of the method for manufacturing the light emitting device 1 will be described with reference to FIGS. 10 to 15 are cross-sectional views for explaining a method for manufacturing the light emitting device 1. Since the basic configuration of this embodiment is the same as that of the first embodiment described with reference to FIGS. 3 to 9, the same components as those of the first embodiment are denoted by the same reference numerals as before, The description of the drawings may be omitted.
  • two light emitting elements 20A and 20B are mounted on the device substrate 4 as shown in FIG.
  • the two light emitting elements 20A, 20B are electrically connected in series between the device substrate 4 and the terminal portion 5 using wires 6a, 6b, 6c.
  • the frame body 2 is formed integrally with the device substrate 4 and the terminal portion 5 by, for example, insert molding (see FIG. 10).
  • the device substrate 4 and the terminal portion 5 are separated from each other with the insulating portion 2a interposed therebetween.
  • the device substrate 4 and the terminal portion 5 have a height H1 from the connection surface of the wire 6a (see FIG. 11) of the terminal portion 5 to the upper edge 2b of the frame body 2 and the upper surfaces of the light emitting elements 20A and 20B.
  • H2 the height from the connection surface of the wire 6a (see FIG. 11) of the terminal portion 5 to the upper edge 2b of the frame body 2 and the upper surfaces of the light emitting elements 20A and 20B.
  • the die bond material 31 is supplied to the surface of the device substrate 4 exposed at the inner bottom portion of the recess 3 of the frame body 2, and the two light emitting elements 20A and 20B are mounted thereon (FIG. 10). reference).
  • the light emitting elements 20 ⁇ / b> A and 20 ⁇ / b> B are fixed to the surface of the device substrate 4.
  • bumps 32 are formed on the n-electrode 27 (see FIG. 2) of the light emitting element 20A on the side close to the terminal portion 5 (see FIG. 10).
  • the bump 32 is for the wire 6a extending from the light emitting element 20A to the terminal portion 5 spaced apart from the insulating portion 2a.
  • a bonding step is performed in which wires 6a for electrically connecting the light emitting elements 20A and the terminal portions 5 are joined to each other.
  • one end of the wire 6a is first formed, for example, by forming a ball portion 33 and bonded to the terminal portion 5, and the other end of the wire 6a is secondly bumped to the light emitting element 20A.
  • a second bonding step for bonding to 32 is performed.
  • bumps 34 are formed on the p-electrode 26 (see FIG. 2) of the light emitting element 20A on the side close to the terminal portion 5.
  • the bumps 34 are for the wires 6b that electrically connect the light emitting elements 20A and 20B mounted on the apparatus substrate 4 together.
  • a bonding process is performed in which the wire 6 b for electrically connecting the light emitting element 20 ⁇ / b> A and the light emitting element 20 ⁇ / b> B is joined.
  • one end of the wire 6b is first formed with, for example, a ball portion 35 and bonded to the n-electrode 27 (see FIG. 2) of the light-emitting element 20B, and the other end of the wire 6b is emitted second. Bonded to the bump 34 of the p-electrode 26 of the element 20A.
  • a wire 6c for electrically connecting the p-electrode 26 (see FIG. 2) of the light emitting element 20B far from the terminal portion 5 and the device substrate 4 is bonded to each.
  • one end of the wire 6c is first formed with, for example, a ball portion 36 and bonded to the p-electrode 26 of the light emitting element 20, and the other end of the wire 6c is formed with a second, for example, ball portion 37. Then, it is bonded to the device substrate 4.
  • the sealing material 7 is filled into the recess 3 inside the frame body 2.
  • a predetermined amount of the sealing material 7 is dropped toward the light emitting elements 20A and 20B by using, for example, a dispenser.
  • the light emitting elements 20 ⁇ / b> A and 20 ⁇ / b> B are sealed with the sealing material 7.
  • FIG. 16 is a cross-sectional view for explaining the method for manufacturing the light emitting device 1.
  • the basic configuration of this embodiment is the same as that of the first embodiment described with reference to FIGS. 3 to 9 and the second embodiment described with reference to FIGS.
  • the common constituent elements are given the same reference numerals as before, and the description of the drawings for each process is omitted.
  • two light emitting elements 20 are mounted on the device substrate 4 as shown in FIG.
  • the two light emitting elements 20 are individually electrically connected in series between the device substrate 4 and the terminal portion 5 using wires 6a and 6b.
  • the frame body 2 is formed so as to be separated from each other with the insulating portion 2a therebetween.
  • the two device substrates 4 and the terminal portion 5 have a height H1 from the connection surface of the wire 6a of the terminal portion 5 to the upper edge 2b of the frame body 2 which is a height from the upper surface of the light emitting element 20 to the upper edge 2b of the frame body 2. It is formed to be lower than the height H2.
  • the die bond material 31 is supplied to the surface of each of the two device substrates 4 exposed at the inner bottom of the recess 3 of the frame body 2, and the two light emitting elements 20 are mounted thereon, respectively. To do. As a result, the two light emitting elements 20 are individually fixed to the surface of each of the two device substrates 4.
  • bumps 32 are formed on the n electrodes 27 (see FIG. 2) of each of the two light emitting elements 20.
  • the bump 32 is for the wire 6a extending from each of the two light emitting elements 20 to the terminal portion 5 spaced apart from the insulating portion 2a.
  • a bonding process is performed in which two wires 6a for electrically connecting each of the two light emitting elements 20 and the terminal portion 5 are joined.
  • one end of the wire 6a is first formed, for example, by forming a ball portion 33 and bonded to the terminal part 5, and the other end of the wire 6a is secondly bumped to the light emitting element 20.
  • a second bonding step for bonding to 32 is performed.
  • wires 6b for individually electrically connecting the p electrodes 26 (see FIG. 2) of the two light emitting elements 20 and the two device substrates 4 are bonded to each other.
  • the sealing material 7 is filled into the recess 3 inside the frame body 2.
  • a predetermined amount of the sealing material 7 is dropped toward the light emitting element 20 using, for example, a dispenser. Thereby, each of the two light emitting elements 20 is sealed with the sealing material 7.
  • the method of manufacturing the light emitting device 1 includes the device substrate 4 on which the light emitting element 20 is mounted and the terminal portion 5 that is separated from the device substrate 4 and electrically connected to the light emitting element 20 by the wire 6a.
  • the height H1 from the connection surface of the wire 6a of the terminal portion 5 to the upper edge 2a of the frame body 2 is higher than the height H2 from the upper surface of the light emitting element 20 to the upper edge 2a of the frame body 2.
  • a frame forming step for forming the lower frame 2 a bump forming step for forming the bump 32 on the electrode of the light emitting element 20 to which the wire 6 a is connected, and a first step for joining one end of the wire 6 a to the terminal portion 5 first.
  • the thickness (H1) of the sealing material 7 above the first bonding portion of the wire 6a is made thinner than the thickness (H2) of the sealing material 7 above the second bonding portion of the wire 6a. be able to. Therefore, it is possible to reduce the influence of the expansion and contraction of the sealing material 7 received by the first bonding portion of the wire 6a, that is, the recrystallization region of the wire 6a.
  • the load of the second bonding of the wire 6a is subjected to two loads, that is, when the bump 32 is formed and when the second bonding is performed, and in the case of the p-electrode 26 formed on the multilayer structure, There is a concern that the lower part may be damaged. Therefore, in the method for manufacturing the light emitting device 1, the bump forming process forms the bump 32 on the n electrode 27 of the light emitting element 20. Thereby, damage to the light emitting element 20 can be prevented.
  • the light emitting device 1 since the light emitting device 1 is manufactured using the above method, the light emitting device 1 in which the influence of expansion and contraction of the sealing material 7 received by the recrystallization region of the wire 6a is reduced can be obtained. Thereby, the tolerance when the light-emitting device 1 is subjected to a temperature change due to the external environment or self-heating or a repeated temperature change is improved. Therefore, even if the amount of the sealing material 7 is relatively increased, the breakage of the wire 6a can be suppressed, and the light emitting device 1 can be increased in size.
  • the method for manufacturing the light-emitting device 1 that can suppress the breakage of the wire 6a bonded to the light-emitting element 20 as much as possible and the method for manufacturing the light-emitting device 1 are manufactured.
  • the light emitting device 1 can be provided.
  • the present invention can be used in a method for manufacturing a light emitting device having a configuration in which the periphery of a light emitting element is covered with a sealing material, and a light emitting device manufactured using the method.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Wire Bonding (AREA)

Abstract

　発光装置１の製造方法は、発光素子２０が搭載される装置基板４及び装置基板４に対して離隔してワイヤ６ａにより発光素子２０と電気的に接続される端子部５を有する枠体２であって、端子部５のワイヤ６ａの接続面から枠体２の上縁２ａまでの高さＨ１が発光素子２０の上面から枠体２の上縁２ａまでの高さＨ２より低い枠体２を形成する枠体形成工程と、ワイヤ６ａが接続される発光素子２０の電極にバンプ３２を形成するバンプ形成工程と、ワイヤ６ａの一端を第１に端子部５に接合する第１ボンディング工程と、ワイヤ６ａの他端を第２にバンプ３２に接合する第２ボンディング工程と、枠体２の内部に封止材７を充填して発光素子２０を封止する封止工程と、を有する。

Description

発光装置の製造方法及び発光装置
　本発明は発光装置の製造方法及びその方法を用いて製造される発光装置に関する。
　従来、例えばＬＥＤ（Light Emitting Diode）チップなどの発光素子を用いた発光装置が知られる。ＬＥＤチップを用いた発光装置はＬＥＤチップ自体やＬＥＤチップに電気的に接続されるワイヤを保護するため、ＬＥＤチップが照射する光の取り出し効率を向上させるため及び蛍光体を分散させるためにＬＥＤチップが透明樹脂からなる封止材で覆われる。ＬＥＤチップが照射する光は封止材の内部を透過して封止材の表面（光取り出し面）から外部に向かって放出される。このような従来の発光装置が特許文献１に記載されている。
　特許文献１に記載された発光装置（発光素子パッケージ）は枠体（ボディー）の底部に配置された基板（反射カップ）上に発光素子が搭載され、発光素子と離隔する他の基板に対してワイヤを介して発光素子が電気的に接続されている。ワイヤの両端を発光素子と基板とに接合する際、第１にワイヤの一端を発光素子に接合（第１ボンディング）し、第２にワイヤの他端を発光素子と離隔する基板に接合（第２ボンディング）するボンディング工程が行われるのが一般的である。
特開２０１１－２５４０８０号公報
　ここで、ワイヤの第１ボンディングにおいて、ワイヤの接合箇所直上のネック部が再結晶化することが知られている。ワイヤの再結晶化領域では金属が脆くなり、破断し易いことも知られている。
　一方、発光素子を覆う封止材には熱膨張率が比較的大きい材料を使用することがある。そして、発光装置は外部環境や発光素子の点灯、消灯などに起因して温度変化或いは温度変化の繰り返しを受けることが考えられる。この温度変化により封止材が膨張収縮を繰り返すと、ワイヤに繰り返し応力が加わる可能性がある。この繰り返し応力がワイヤの再結晶化領域に悪影響を与え、ワイヤが一層破断し易くなることが懸念されている。
　このような不具合は、発光装置の大型化に伴い封止材の量が多くなり、ワイヤの長さが長くなることでさらに顕著になることも懸念されている。
　本発明は、上記の点に鑑みなされたものであり、発光素子に接合されるワイヤの破断をできるだけ抑制することが可能な発光装置の製造方法及びその方法を用いて製造される発光装置を提供することを目的とする。
　上記の課題を解決するため、本発明の発光装置の製造方法は、発光素子が搭載される装置基板及び前記装置基板に対して離隔してワイヤにより前記発光素子と電気的に接続される端子部を有する枠体であって、前記端子部の前記ワイヤの接続面から前記枠体の上縁までの高さが前記発光素子の上面から前記枠体の上縁までの高さより低い前記枠体を形成する枠体形成工程と、前記ワイヤが接続される前記発光素子の電極にバンプを形成するバンプ形成工程と、前記ワイヤの一端を第１に前記端子部に接合する第１ボンディング工程と、前記ワイヤの他端を第２に前記バンプに接合する第２ボンディング工程と、前記枠体の内部に封止材を充填して前記発光素子を封止する封止工程と、を有することを特徴としている。
　この構成によれば、ワイヤの第１ボンディングの箇所の上方の封止材の厚さが、ワイヤの第２ボンディングの箇所の上方の封止材の厚さより薄くなる。したがって、ワイヤの第１ボンディングの箇所、すなわちワイヤの再結晶化領域が受ける封止材の膨張収縮の影響が低減する。
　また、上記構成の発光装置の製造方法において、前記バンプ形成工程は、前記発光素子のｎ電極に前記バンプを形成することを特徴としている。
　また、上記の課題を解決するため、本発明は、上記方法を用いて製造される発光装置を特徴としている。
　本発明の構成によれば、発光素子に接合されるワイヤの破断をできるだけ抑制することが可能な発光装置の製造方法及びその方法を用いて製造される発光装置を提供することができる。
本発明の実施形態に係る発光装置の断面図である。 本発明の実施形態に係る発光装置の発光素子の断面図である。 本発明の実施例１の発光装置の製造方法を説明するための断面図である。 本発明の実施例１の発光装置の製造方法を説明するための断面図である。 本発明の実施例１の発光装置の製造方法を説明するための断面図である。 本発明の実施例１の発光装置の製造方法を説明するための断面図である。 本発明の実施例１の発光装置の製造方法を説明するための断面図である。 本発明の実施例１の発光装置の製造方法を説明するための断面図である。 本発明の実施例１の発光装置の製造方法を説明するための断面図である。 本発明の実施例２の発光装置の製造方法を説明するための断面図である。 本発明の実施例２の発光装置の製造方法を説明するための断面図である。 本発明の実施例２の発光装置の製造方法を説明するための断面図である。 本発明の実施例２の発光装置の製造方法を説明するための断面図である。 本発明の実施例２の発光装置の製造方法を説明するための断面図である。 本発明の実施例２の発光装置の製造方法を説明するための断面図である。 本発明の実施例３の発光装置の製造方法を説明するための断面図である。
　以下、本発明の実施形態を図１～図１６に基づき説明する。
　最初に、本発明の実施形態に係る発光装置について、図１及び図２を用いてその構造を説明する。図１は発光装置の断面図、図２は発光装置の発光素子の断面図である。
　発光装置１は、図１に示すように枠体２に搭載される発光素子２０を備える。発光素子２０は例えば半導体を用いて形成されたＬＥＤチップである。ＬＥＤチップを構成する半導体の種類は例えば所望するＬＥＤチップの出射光の波長等に基づいて適宜決定される。例えば、ＬＥＤチップは紫外、青、緑、赤、赤外の任意の波長のものを用いて良い。
　発光素子２０は、図２に示すように例えばサファイアからなる素子基板２１の上面の上に、複数の半導体層が結晶成長される。この素子基板２１の上には、緩衝層２２と、ｎ型半導体層２３と、発光層である活性層２４と、ｐ型半導体層２５とが順に積層される。ｐ型半導体層２５の上にｐ電極２６が設けられる。
　ｎ型半導体層２３の一部と、活性層２４と、ｐ型半導体層２５とはメサ状にエッチングされ、ｎ型半導体層２３の一部が上方に対して露出する。この露出したｎ型半導体層２３の上にｎ電極２７が設けられる。発光素子２０の上面ほぼ全体には、ｐ電極２６及びｎ電極２７が露出するように保護膜２８が設けられる。
　枠体２は、図１に示すように外形が略直方体形状をなし、窪み３を備える。窪み３は枠体２の内部から図１における枠体２の上面方向に向かって広口となるように傾斜した側面を有し、枠体２の上面において開口となる。発光素子２０はこの窪み３の内底部に配置される。
　発光素子２０が照射する光の一部は窪み３の傾斜した側面で反射される。発光装置１の光の取り出し効率を向上させるため、枠体２は反射率がより高い材料であることが望ましく、例えばポリフタルアミド樹脂やポリエチレンテレフタレート樹脂等の硬質の白色樹脂や、酸化アルミニウム（Ａｌ２Ｏ３）の焼結体からなるセラミックを用いても良い。
　枠体２には装置基板４と、端子部５とが敷設される。装置基板４及び端子部５は、詳細には正負の電極として機能するように対をなして構成され、枠体２の一部である絶縁部２ａを隔てて互いに離隔する。装置基板４及び端子部５はいずれもそれらの一端部が窪み３の内底部に位置するように設けられる。なお、装置基板４及び端子部５は枠体２と一体的に形成されるものであっても良い。
　発光素子２０は装置基板４の図１における上面であって、枠体２の水平方向における略中央部に載置される。発光素子２０はワイヤ６ａ、６ｂにより端子部５と、装置基板４とに電気的に接続される。ここで、装置基板４及び端子部５は、端子部５のワイヤ６ａの接続面から枠体２の上縁２ｂまでの高さＨ１が発光素子２０の上面から枠体２の上縁２ｂまでの高さＨ２より低くなるように形成される。
　発光素子２０及びワイヤ６ａ、６ｂはそれらの周囲が封止材７によって覆われる。封止材７は枠体２の窪み３を満たすように窪み３に充填される。発光素子２０が照射する光は窪み３から外部に露出する封止材７の表面であって図１における上面である光取り出し面７ａから出射される。封止材７は例えば熱硬化性のエポキシ樹脂若しくはシリコーン樹脂からなる。これにより、封止材７の信頼性及び透明性が高まり、発光装置１の光の取り出し効率を向上させることができる。また、封止材７には例えば蛍光体や分散剤等の添加物を混入しても良い。
　続いて、発光装置１の製造方法の実施例１について、図３～図９を用いて説明する。図３～図９は発光装置１の製造方法を説明するための断面図である。なお、実施例１の説明において適宜図１及び図２を参照することがある。
　実施例１の発光装置１の製造方法では、まず図３に示す枠体形成工程において、枠体２を例えばインサート成形により装置基板４及び端子部５と一体的に形成する。装置基板４と端子部５とは絶縁部２ａを隔てて互いに離隔する。装置基板４及び端子部５は、図３及び図４に示すように端子部５のワイヤ６ａ（図１参照）の接続面から枠体２の上縁２ｂまでの高さＨ１が発光素子２０の上面から枠体２の上縁２ｂまでの高さＨ２より低くなるように形成する。
　次に、図４に示す素子搭載工程において、枠体２の窪み３の内底部で露出する装置基板４の表面にダイボンド材料３１を供給し、その上に発光素子２０を搭載する。これにより、発光素子２０が装置基板４の表面に固着される。
　次に、図５に示すバンプ形成工程において、発光素子２０のｎ電極２７（図２参照）にバンプ３２を形成する。このバンプ３２は発光素子２０から絶縁部２ａを隔てて離隔する端子部５に対して延びるワイヤ６ａのためのものである。
　次に、図６に示すように発光素子２０と端子部５との間を跨いで各々を電気的に接続するためのワイヤ６ａを接合するボンディング工程を実行する。ワイヤ６ａに係るボンディング工程では、ワイヤ６ａの一端を第１に例えばボール部３３を形成して端子部５に接合する第１ボンディング工程と、ワイヤ６ａの他端を第２に発光素子２０のバンプ３２に接合する第２ボンディング工程と、が実行される。
　引き続き、図７及び図８に示すボンディング工程において、発光素子２０のｐ電極２６（図２参照）と装置基板４とを電気的に接続するためのワイヤ６ｂを各々に対して接合する。ワイヤ６ｂに係るボンディング工程では、ワイヤ６ｂの一端を第１に例えばボール部３４を形成して発光素子２０のｐ電極２６に接合し、ワイヤ６ｂの他端を第２に例えばボール部３５を形成して装置基板４に接合する。
　次に、図９に示す封止工程において、封止材７を枠体２の内部の窪み３に充填する。封止材７は例えばディスペンサ等を利用して所定量が発光素子２０に向けて滴下される。これにより、発光素子２０が封止材７で封止される。
　続いて、発光装置１の製造方法の実施例２について、図１０～図１５を用いて説明する。図１０～図１５は発光装置１の製造方法を説明するための断面図である。この実施例の基本的な構成は図３～図９を用いて説明した前記実施例１と同じであるので、実施例１と共通する構成要素には前と同じ符号を付し、工程毎の図面の記載を省略することがある。
　実施例２の発光装置１は、図１５に示すように装置基板４に２個の発光素子２０Ａ、２０Ｂを搭載する。２個の発光素子２０Ａ、２０Ｂは装置基板４と端子部５との間でワイヤ６ａ、６ｂ、６ｃを用いて電気的に直列接続される。
　実施例２の発光装置１の製造方法では、まず枠体形成工程において、枠体２を例えばインサート成形により装置基板４及び端子部５と一体的に形成する（図１０参照）。装置基板４と端子部５とは絶縁部２ａを隔てて互いに離隔する。装置基板４及び端子部５は、図１０に示すように端子部５のワイヤ６ａ（図１１参照）の接続面から枠体２の上縁２ｂまでの高さＨ１が発光素子２０Ａ、２０Ｂの上面から枠体２の上縁２ｂまでの高さＨ２より低くなるように形成する。
　次に、素子搭載工程において、枠体２の窪み３の内底部で露出する装置基板４の表面にダイボンド材料３１を供給し、その上に２個の発光素子２０Ａ、２０Ｂを搭載する（図１０参照）。これにより、発光素子２０Ａ、２０Ｂが装置基板４の表面に固着される。
　次に、第１バンプ形成工程において、端子部５に近い側の発光素子２０Ａのｎ電極２７（図２参照）にバンプ３２を形成する（図１０参照）。このバンプ３２は発光素子２０Ａから絶縁部２ａを隔てて離隔する端子部５に対して延びるワイヤ６ａのためのものである。
　次に、図１１に示すように発光素子２０Ａと端子部５との間を跨いで各々を電気的に接続するためのワイヤ６ａを接合するボンディング工程を実行する。ワイヤ６ａに係るボンディング工程では、ワイヤ６ａの一端を第１に例えばボール部３３を形成して端子部５に接合する第１ボンディング工程と、ワイヤ６ａの他端を第２に発光素子２０Ａのバンプ３２に接合する第２ボンディング工程と、が実行される。
　次に、図１２に示す第２バンプ形成工程において、端子部５に近い側の発光素子２０Ａのｐ電極２６（図２参照）にバンプ３４を形成する。このバンプ３４はともに装置基板４に搭載された発光素子２０Ａと発光素子２０Ｂとを電気的に接続するワイヤ６ｂのためのものである。
　次に、図１３に示すように発光素子２０Ａと発光素子２０Ｂとを電気的に接続するためのワイヤ６ｂを接合するボンディング工程を実行する。ワイヤ６ｂに係るボンディング工程では、ワイヤ６ｂの一端を第１に例えばボール部３５を形成して発光素子２０Ｂのｎ電極２７（図２参照）に接合し、ワイヤ６ｂの他端を第２に発光素子２０Ａのｐ電極２６のバンプ３４に接合する。
　引き続き、図１４に示すボンディング工程において、端子部５から遠い側の発光素子２０Ｂのｐ電極２６（図２参照）と装置基板４とを電気的に接続するためのワイヤ６ｃを各々に対して接合する。ワイヤ６ｃに係るボンディング工程では、ワイヤ６ｃの一端を第１に例えばボール部３６を形成して発光素子２０のｐ電極２６に接合し、ワイヤ６ｃの他端を第２に例えばボール部３７を形成して装置基板４に接合する。
　次に、図１５に示す封止工程において、封止材７を枠体２の内部の窪み３に充填する。封止材７は例えばディスペンサ等を利用して所定量が発光素子２０Ａ、２０Ｂに向けて滴下される。これにより、発光素子２０Ａ、２０Ｂが封止材７で封止される。
　続いて、発光装置１の製造方法の実施例３について、図１６を用いて説明する。図１６は発光装置１の製造方法を説明するための断面図である。この実施例の基本的な構成は図３～図９を用いて説明した前記実施例１、及び図１０～図１５を用いて説明した前記実施例２と同じであるので、これらの実施例と共通する構成要素には前と同じ符号を付し、工程毎の図面の記載を省略するものとする。
　実施例３の発光装置１は、図１６に示すように装置基板４に２個の発光素子２０を搭載する。２個の発光素子２０は個別に装置基板４と端子部５との間でワイヤ６ａ、６ｂを用いて電気的に直列接続される。
　実施例３の発光装置１の製造方法では、まず枠体形成工程において、図１６の左右各々に設けた２枚の装置基板４と、図１６の左右方向中央に設けた端子部５とが各々絶縁部２ａを隔てて互いに離隔するよう枠体２を形成する。２枚の装置基板４及び端子部５は端子部５のワイヤ６ａの接続面から枠体２の上縁２ｂまでの高さＨ１が発光素子２０の上面から枠体２の上縁２ｂまでの高さＨ２より低くなるように形成する。
　次に、素子搭載工程において、枠体２の窪み３の内底部で露出する２枚の装置基板４の各々の表面にダイボンド材料３１を供給し、その上に２個の発光素子２０を各々搭載する。これにより、２個の発光素子２０が個別に２枚の装置基板４各々の表面に固着される。
　次に、バンプ形成工程において、２個の発光素子２０各々のｎ電極２７（図２参照）にバンプ３２を形成する。このバンプ３２は２個の発光素子２０各々から絶縁部２ａを隔てて離隔する端子部５に対して延びるワイヤ６ａのためのものである。
　次に、２個の発光素子２０各々と端子部５との間を跨いで各々を電気的に接続するためのワイヤ６ａを２本接合するボンディング工程を実行する。ワイヤ６ａに係るボンディング工程では、ワイヤ６ａの一端を第１に例えばボール部３３を形成して端子部５に接合する第１ボンディング工程と、ワイヤ６ａの他端を第２に発光素子２０のバンプ３２に接合する第２ボンディング工程と、が実行される。引き続き、ボンディング工程において、２個の発光素子２０各々のｐ電極２６（図２参照）と２枚の装置基板４とを個別に電気的に接続するためのワイヤ６ｂを各々に対して接合する。
　次に、封止工程において、封止材７を枠体２の内部の窪み３に充填する。封止材７は例えばディスペンサ等を利用して所定量が発光素子２０に向けて滴下される。これにより、２個の発光素子２０各々が封止材７で封止される。
　上記のように、発光装置１の製造方法は、発光素子２０が搭載される装置基板４及び装置基板４に対して離隔してワイヤ６ａにより発光素子２０と電気的に接続される端子部５を有する枠体２であって、端子部５のワイヤ６ａの接続面から枠体２の上縁２ａまでの高さＨ１が発光素子２０の上面から枠体２の上縁２ａまでの高さＨ２より低い枠体２を形成する枠体形成工程と、ワイヤ６ａが接続される発光素子２０の電極にバンプ３２を形成するバンプ形成工程と、ワイヤ６ａの一端を第１に端子部５に接合する第１ボンディング工程と、ワイヤ６ａの他端を第２にバンプ３２に接合する第２ボンディング工程と、枠体２の内部に封止材７を充填して発光素子２０を封止する封止工程と、を有する。これにより、ワイヤ６ａの第１ボンディングの箇所の上方の封止材７の厚さ（Ｈ１）を、ワイヤ６ａの第２ボンディングの箇所の上方の封止材７の厚さ（Ｈ２）より薄くすることができる。したがって、ワイヤ６ａの第１ボンディングの箇所、すなわちワイヤ６ａの再結晶化領域が受ける封止材７の膨張収縮の影響を低減させることができる。
　また、ワイヤ６ａの第２ボンディングの箇所には、バンプ３２の形成時と、第２ボンディングの実行時との２回の負荷が加わり、多層構造の上に形成されたｐ電極２６の場合にその下方が破損する虞があることが懸念される。そこで、発光装置１の製造方法において、バンプ形成工程は発光素子２０のｎ電極２７にバンプ３２を形成した。これにより、発光素子２０の破損を防止することが可能である。
　さらに、発光装置１は上記方法を用いて製造されるので、ワイヤ６ａの再結晶化領域が受ける封止材７の膨張収縮の影響が低減した発光装置１を得ることができる。これにより、発光装置１が外部環境や自己発熱に起因する温度変化或いは温度変化の繰り返しを受けたときの耐性が向上する。したがって、封止材７の量を比較的多くしてもワイヤ６ａの破断を抑制することができ、発光装置１の大型化が可能になる。
　このようにして、本発明の上記実施形態の構成によれば、発光素子２０に接合されるワイヤ６ａの破断をできるだけ抑制することが可能な発光装置１の製造方法及びその方法を用いて製造される発光装置１を提供することができる。
　以上、本発明の実施形態につき説明したが、本発明の範囲はこれに限定されるものではなく、発明の主旨を逸脱しない範囲で種々の変更を加えて実施することができる。
　本発明は、発光素子の周囲を封止材で覆った構成をなす発光装置の製造方法及びその方法を用いて製造される発光装置において利用可能である。
　　　１　　発光装置
　　　２　　枠体
　　　２ａ　　絶縁部
　　　２ｂ　　上縁
　　　３　　窪み
　　　４　　装置基板
　　　５　　端子部
　　　６ａ　　ワイヤ
　　　７　　封止材
　　　７ａ　　光取り出し面
　　　２０　　発光素子
　　　２６　　ｐ電極
　　　２７　　ｎ電極
　　　３２　　バンプ

Claims (3)

  1. 　発光素子が搭載される装置基板及び前記装置基板に対して離隔してワイヤにより前記発光素子と電気的に接続される端子部を有する枠体であって、前記端子部の前記ワイヤの接続面から前記枠体の上縁までの高さが前記発光素子の上面から前記枠体の上縁までの高さより低い前記枠体を形成する枠体形成工程と、
    　前記ワイヤが接続される前記発光素子の電極にバンプを形成するバンプ形成工程と、
    　前記ワイヤの一端を第１に前記端子部に接合する第１ボンディング工程と、
    　前記ワイヤの他端を第２に前記バンプに接合する第２ボンディング工程と、
    　前記枠体の内部に封止材を充填して前記発光素子を封止する封止工程と、
    を有することを特徴とする発光装置の製造方法。
  2. 　前記バンプ形成工程は、前記発光素子のｎ電極に前記バンプを形成することを特徴とする請求項１記載の発光装置の製造方法。
  3. 　請求項１または請求項２に記載の方法を用いて製造される発光装置。
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