201208132 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一種二極體製造方法，特別是指一種發光二 極體的製造方法。 [先前技術3 [0002] 發光二極體憑藉其高光效、低能耗、無污染等優點，已 被應用於越來越多的場合之中，大有取代傳統光源的趨 勢。 [0003] 發光二極體通常會使用—層透明的封裝體來保護晶片， 防止其受到外界環境的千擾。不同的類型發光二極體其 封裝體所使用的材料也不盡相同，其中較為普遍的是環 氧樹脂。環氧樹脂雖然成本較低，但易受到溫度影響而 致老化變黃，影響發光二極體的出光，因此有業者採用 玻璃代替環氧樹脂製造封裝體。對於使用玻璃封裝體的 發光二極體而言’通常的辦法是通過黏膠將玻璃封裝體 黏結於半導體基板上來實現封裝體與基板之間的固定。 然而’由於玻璃與基板為異質結構，在高溫下容易造成 二者間應力變化的不匹配’同時，黏膠在高溫下亦容易 發生變質，從而導致封裝體發生損壞或從半導體基板上 脫落。 【發明内容】 [0004] 本發明旨在提供一種結構穩定的發光二極體的製造方法 〇 [0005] —種製造發光二極體的方法，包括步驟： 099126175 表單編號A0101 第4頁/共24頁 0992045912-0 201208132 [0006] 1)提供一半導體基板，該基板具有至少二引腳； [0007] 2)將一發光二極體晶片固定於半導體基板上，使發光二 極體晶片與二引腳電性連接； [0008] 3)將一玻璃封裝體置於半導體基板上並覆蓋住發光二極 體晶片； [0009] 4)共燒玻璃封裝體與半導體基板以將二者彼此固定； [0010] 5)將封裝完成的半導體基板切割為多個發光二級管。 〇 剛 與習知技術相比，本發明的發光二極體使用共燒實現玻 璃封裝體與半導體基板之間的固定，可有效地避免傳統 技術中由於採用黏膠結合而導致玻璃封裝體與半導體基 板之間連接不穩固的缺陷。並且，通過共燒結合可使玻 璃封裝體更加堅固’有利於保護被其覆蓋的發光二極體 晶片。 [0012] G 【實施方式】 明參閱圖6，示出了本發明第一實施例的發光二極體。該 發光二極體包括一開設一凹槽12的基板1〇、一固定於凹 槽12内的發光二極體晶片2〇、二貫穿基板1〇的引腳利及 一固定於基板10上並覆蓋凹槽12的封裝體4〇。該基板10 由半導體材料製成，如#或者含有氧化㉟或氮化銘的陶 瓷。凹槽12呈碗狀開設於基板1〇頂面，以收容發光二極 體b曰片20。二引腳3〇彼此隔開，以防止二者直接導通而 造成短路。每一引腳30由金屬或其他導電材料（如氧化銦 7或氡化鋅）所製成，其包括暴露於凹槽12底部的〆固線 、暴露於基板1〇底面的_接觸部及一連接該固線 099126175 表單編號 A0101 第 5 頁/共 24 I 0992045912-0 201208132 部32及接觸部36的導通部34。&線部32平行於接觸部％ 且垂直於導通部34。於本發明—實施例令，位於基板1〇 底部的接觸部36的面積大於位於凹槽12底部的固線部犯 的面積，以方便連接到外部的電路結構上。發光二極體 晶片20由可發出特定顏色光線的半導體材料所製成如 可發出紅光的GaAsP，可發出黃光的InGaAlp，可發出藍 光的GaN，可發出綠光的GaP等等。優選地，本發明中採 用可發藍光的GaN作為發光二極體晶片2〇的材料，配合螢 光粉70(如圖7)以達到最終合成白光的效果。發光二極體 晶片2 0採用倒裝的方舞固定於二引腳3〇上其中發光二 極體晶片20的每一電極（未示出）通過凸塊“⑽口）“固定 於相應引腳30的固線部32，以完成發光二極體晶片2〇與 引腳30之間的電氣連接。該封裝體4〇由包含氧化矽 (SiOy或矽酸鈉（Na2〇.Si〇2)的玻璃材質所製成，其包 括一覆蓋層42及一卡掣結構44。該覆蓋層42貼合於基板 10頂面而將發光二極體晶片2〇密封於凹槽丨2内。該卡掣 結構44的形狀及尺寸與凹槽12頂部的形狀及尺寸相當， 其恰好收容於凹槽12的頂部内而脖葑裝體4〇定位於基板 10上。 [0013] [0014] 請一併參閱圖卜5，本發明還公開一種製造該發光二極體 的方法，包括如下步驟： 1)首先提供一半導體基板1〇,該半導體基板1〇具有多個 分離的凹槽12及多個引腳3〇，其中每一凹槽12内設有至 少二引腳30 ; 099126175 2)將爹個發允二極體晶片20分別 • 第e 1/共24頁 囬疋於恭极1U的爹 表單編號A0101 0992045912-0 [⑻ 15] 201208132 [0016] ==内’並使每一發光二極體晶片別與相應 腳30電連接； 3)提供一玻璃封裝體4〇，該_封裝體40具有一覆蓋芦 42及多個#結構44，㈣麵輯體㈣於半導體美曰 板1〇表面，使其各卡擎結構44嵌入各凹槽U内·，- [0017] 4)共燒（C〇-firing)_封制4Q及半導體基板叫吏 二者緊密結合； [0018] Ο 5)切割半導體基板1〇,將其％成多個獨立的發光二極體 〇 [0019] 在步驟1)中，凹槽12可採用鑽孔（driUing)、鐳射 (laser)或蝕刻（etching)#方式在半導體基板1〇上形 成’引腳30則可採用諸如蒸鑛（vap〇r dep〇siti〇n)、 電鍍（electroplating)、濺鍍（sputtering dep〇s_ it ion)以及電子束（E-gUn)等方式形成於半導體基板ι〇 上。 h 〇 [0020] 在步驟2)中’發光土·極體晶片20可通過黏膠（未示出）以 正裂的方式固定於凹槽12底部，再通過二金線（未示出） 連接至二引腳30，也可通過共晶的方式直接固定於弓丨聊 3〇表面然後再通過金線或焊錫與引腳30電連接，或者是 如圖1-6般以倒裝的方式通過凸塊50固定於二引腳3〇上。 [0021] 在步驟3)中，玻璃封裝體40的覆蓋層42與卡掣結構44可 通過鑄模或切割的方式形成，或者通過共燒的方式相互 、结合為一體，其中通過共燒結合的卡掣結構44及覆蓋層 42可採用如圖1-6般不同的材料製成。 099126175 表單編號A0101 第7頁/共24頁 0992045912-0 201208132 [0022] 在步驟4)中，共燒的溫度優選為300〜500攝氏度。此外 ，為進一步降低共燒所需的溫度，可在步驟3)中在玻璃 封裝體40與半導體基板10之間塗覆一層液化玻璃（未示出 )，以促進二者的結合。並且，為保護凹槽12内的發光二 極體晶片20，還可在凹槽12内注入惰性氣體，以防止發 光二極體晶片2 0由於外界污染或濕氣的侵入而發生故障 或者損壞。 [0023] 在步驟5)中，半導體基板10切割方式可根據具體情況進 行選擇，如機械切割或鐳射切割等等。 [0024] 另外，為進一步保護發光二極體晶片20，還可在步驟3) 之前如圖7所示般在發光二極體晶片20的周圍點上一圈透 明的封膠60，用以防止發光二極體晶片20在玻璃封裝體 40及半導體基板10共燒時無法承受高溫而致損壞。該圈 封膠60的厚度可控制在一較小的數值範圍内，以避免過 度填充凹槽12而對後續玻璃封裝體40的卡掣結構44與凹 槽12的配合造成干擾。該封膠60可選自矽膠（si 1 icone) 、環氧樹脂（epoxy)、聚碳酸醋（polycarbonate)等透 明材料所製成。 [0025] 此外，包圍發光二極體晶片20的封膠60内還可摻雜螢光 粉70，以對發光二極體晶片20的出光顏色進行調節。螢 光粉70可採用石權石（garnet)結構的化合物、氮化物、 硫化物、氮氧化物或砍酸鹽（s i 1 i c a t e)等適合的材料製 成，以將發光二極體晶片20的初始光轉換為不同波長的 光線，以形成多波段的混光。 099126175 表單編號A0101 第8頁/共24頁 0992045912-0 201208132 [0026] [0027] Ο [0028] ❹ 當然，上述螢光粉70也可摻入玻璃封裝體40内，也可如 圖8所示般通過封膠62固定於玻璃封裝體40的外表面，或 者是卡掣結構44的内表面（圖未示出），同樣能起到改變 出光顏色的效果。 可以理解地，上述發光二極體的結構可做相應變換，而 並不局限於前述揭露的形狀。如圖9所示，半導體基板10 可變化為未形成凹槽12的平板狀結構，發光二極體晶片 20a轉而改為直接暴露在半導體基板10a頂面。為保護發 光二極體晶片20a，玻璃封裝體40a底面形成有多個凹槽 46a。當玻璃封裝體40通過共燒結合於半導體基板10a頂 面時，發光二極體晶片20a就被收容在凹槽46a内，從而 達到與外界環境隔絕的效果。 此外，如圖10所示，為方便玻璃封裝體40a與半導體基板 10a間的定位，玻璃封裝體40a的底部也可形成多個柱狀 的卡掣結構44a，半導體基板10a上則開設多個與卡掣結 構44a尺寸相當的開孔14a。通過卡掣結構44a與開孔14a 的配合，玻璃封裝體40a的覆蓋層42a可精確地定位於半 導體基板l〇a上，從而簡化發光二極體的製造流程。同時 ，卡掣結構44a嵌入開孔14a内還可增強玻璃封裝體40a 與半導體基板l〇a之間的結合穩定性，使二者之間的結合 更加穩固。卡掣結構44a可以是與覆蓋層42a—體成型， 也可以如圖10所示通過其他方式固定於覆蓋層42a底部。 上述多個發光二極體是通過切割一整塊封裝好的半導體 基板10、10a所形成的，此種在同一半導體基板10、10a 上同時大面積封裝好多個發光二極體然後再進行切割的 099126175 表單編號A0101 第9頁/共24頁 0992045912-0 [0029] 201208132 工藝可大幅度地減少製造所花費的時間，更有利於工業 上的大規模量產。當然，也可先將半導體基板10、10a切 割為多個獨立的小基板，然後再逐個進行固晶、封裝等 後續流程，此種工藝也同樣可獲得與前述製造工藝相同 的發光二極體，僅流程略顯複雜。 [0030] [0031] [0032] [0033] [0034] [0035] [0036] 099126175 由於採用共燒來固定玻璃封裝體40、40a與半導體基板10 、10a，二者之間的結合可十分穩固，從而避免傳統技術 中由於使用黏膠而導致玻璃封裝體40、40a損壞或脫落的 問題。 综上所述，本發明符合發明專利要件，爰依法提出專利 申請。惟，以上所述者僅為本發明之較佳實施例，舉凡 熟悉本案技藝之人士，在爰依本發明精神所作之等效修 飾或變化，皆應涵蓋於以下之申請專利範圍内。 【圖式簡單說明】 圖1示出了製造本發明第一實施例的發光二極體的第一個 步驟。 圖2示出了製造本發明第一實施例的發光二極體的第二個 步驟。 圖3示出了製造本發明第一實施例的發光二極體的第三個 步驟。 圖4示出了製造本發明第一實施例的發光二極體的第四個 步驟。 圖5示出了製造本發明第一實施例的發光二極體的第五個 步驟。 表單編號A0101 第10頁/共24頁 0992045912-0 201208132 [0037] 圖6示出了製造完成的本發明第一實施例的發光二極體的 剖面圖。 [0038] 圖7示出了製造本發明第二實施例的發光二極體的一個步 驟。 [0039] 圖8示出了製造本發明第三實施例的發光二極體的一個步 驟。 [0040] 圖9示出了製造本發明第四實施例的發光二極體的一個步 驟。201208132 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a method of manufacturing a diode, and more particularly to a method of manufacturing a light-emitting diode. [Prior Art 3 [0002] Light-emitting diodes have been used in more and more occasions due to their advantages of high luminous efficiency, low energy consumption, and no pollution, and have a tendency to replace conventional light sources. [0003] Light-emitting diodes typically use a transparent package to protect the wafer from external environments. Different types of light-emitting diodes use different materials for their packages, and epoxy resins are more common. Although epoxy resin is low in cost, it is susceptible to temperature and aging and yellowing, which affects the light output of the light-emitting diode. Therefore, some manufacturers use glass instead of epoxy resin to manufacture the package. For a light-emitting diode using a glass package, the usual method is to bond the package to the substrate by bonding the glass package to the semiconductor substrate. However, since the glass and the substrate have a heterostructure, the stress variation between the two is liable to occur at a high temperature, and the adhesive is liable to deteriorate at a high temperature, resulting in damage to the package or falling off from the semiconductor substrate. SUMMARY OF THE INVENTION [0004] The present invention is directed to a method for fabricating a light-emitting diode that is structurally stable. [0005] A method of fabricating a light-emitting diode, comprising the steps of: 099126175 Form No. A0101 Page 4 of 24 Page 992045912-0 201208132 [0006] 1) providing a semiconductor substrate having at least two pins; [0007] 2) fixing a light emitting diode chip on a semiconductor substrate to enable a light emitting diode chip and a second lead a power connection; [0008] 3) placing a glass package on the semiconductor substrate and covering the light emitting diode wafer; [0009] 4) co-fired the glass package and the semiconductor substrate to fix the two to each other; 0010] 5) Cutting the packaged semiconductor substrate into a plurality of light emitting diodes. Compared with the prior art, the light-emitting diode of the present invention uses co-firing to achieve the fixation between the glass package and the semiconductor substrate, which can effectively avoid the glass package and the semiconductor caused by the adhesive bonding in the conventional technology. The connection between the substrates is not stable. Moreover, the glass package can be made stronger by co-firing bonding, which is advantageous for protecting the light-emitting diode wafer covered by it. [Embodiment] Referring to FIG. 6, a light-emitting diode according to a first embodiment of the present invention is shown. The light-emitting diode includes a substrate 1 that defines a recess 12, a light-emitting diode chip 2 that is fixed in the recess 12, and a lead that penetrates the substrate 1 and is fixed on the substrate 10 and The package 4 is covered by the recess 12 . The substrate 10 is made of a semiconductor material such as # or ceramic containing oxidized 35 or nitriding. The recess 12 is formed in a bowl shape on the top surface of the substrate 1 to accommodate the light-emitting diode b. The two pins 3〇 are spaced apart from each other to prevent direct conduction between the two and cause a short circuit. Each of the leads 30 is made of metal or other conductive material (such as indium oxide 7 or zinc telluride), and includes a tamping line exposed to the bottom of the recess 12, a contact portion exposed to the bottom surface of the substrate 1 and a Connect the fixed wire 099126175 Form No. A0101 Page 5 / 24 I 0992045912-0 201208132 The portion 32 and the conduction portion 34 of the contact portion 36. The & line portion 32 is parallel to the contact portion % and perpendicular to the conduction portion 34. In the present invention, the area of the contact portion 36 located at the bottom of the substrate 1 is larger than the area of the solid portion located at the bottom of the recess 12 to facilitate connection to an external circuit structure. The light-emitting diode wafer 20 is made of a semiconductor material which emits light of a specific color such as GaAsP which emits red light, InGaAlp which emits yellow light, GaN which emits blue light, GaP which emits green light, and the like. Preferably, in the present invention, blue light-emitting GaN is used as the material of the light-emitting diode wafer 2, and the phosphor powder 70 (Fig. 7) is used to achieve the final synthetic white light effect. The light-emitting diode chip 20 is fixed on the two-pin 3 turns by flip-chip dance. Each electrode (not shown) of the light-emitting diode chip 20 is fixed to the corresponding pin through the bump "(10) port). The fixing portion 32 of 30 completes the electrical connection between the LED chip 2 and the lead 30. The package body 4 is made of a glass material containing yttria (SiOy or sodium citrate (Na2〇.Si〇2), and includes a cover layer 42 and a cassette structure 44. The cover layer 42 is attached to The top surface of the substrate 10 seals the LED wafer 2 into the recess 丨 2. The shape and size of the latch structure 44 is equivalent to the shape and size of the top of the recess 12, and is received at the top of the recess 12 The inside of the neck body 4 is positioned on the substrate 10. [0014] Please refer to FIG. 5 together, the present invention also discloses a method for manufacturing the light emitting diode, comprising the following steps: 1) first providing a semiconductor substrate 1 〇 having a plurality of discrete recesses 12 and a plurality of pins 3 〇, wherein each recess 12 is provided with at least two pins 30; 099126175 2) Diode Wafer 20 respectively • The first e 1 / 24 pages are back to the 极 1 1U 爹 Form No. A0101 0992045912-0 [(8) 15] 201208132 [0016] == 内 ' and make each LED chip Electrically connected to the corresponding leg 30; 3) providing a glass package 4, the package 40 having a cover 42 and a plurality of structures 44, (4) The face body (4) is placed on the surface of the semiconductor enamel plate, so that each card engine structure 44 is embedded in each groove U. - [0017] 4) Co-firing (C〇-firing) _ sealing 4Q and semiconductor substrate The two are closely combined; [0018] Ο 5) cutting the semiconductor substrate 1〇, and dividing it into a plurality of independent light-emitting diodes [0019] In step 1), the groove 12 may be drilled (driUing) , laser or etching # form on the semiconductor substrate 1 'pin 30 can be used such as steaming, electroplating, sputtering (sputtering dep The semiconductor substrate is formed on the semiconductor substrate by a method such as 〇 s_ ion and an electron beam (E-gUn). h 〇 [0020] In step 2), the luminescent earth electrode wafer 20 may be fixed to the bottom of the groove 12 by a glue (not shown) in a positively split manner, and then connected by a gold wire (not shown). To the second pin 30, it can also be directly fixed to the surface of the 丨 〇 3〇 by eutectic and then electrically connected to the pin 30 through a gold wire or solder, or through the flip-chip as shown in Figure 1-6. The bump 50 is fixed to the two pins 3〇. [0021] In step 3), the cover layer 42 of the glass package 40 and the cassette structure 44 may be formed by molding or cutting, or integrated with each other by co-firing, wherein the card is combined by co-firing The crucible structure 44 and the cover layer 42 can be made of different materials as shown in FIGS. 1-6. 099126175 Form No. A0101 Page 7 of 24 0992045912-0 201208132 [0022] In step 4), the co-firing temperature is preferably 300 to 500 degrees Celsius. Further, to further reduce the temperature required for co-firing, a layer of liquefied glass (not shown) may be applied between the glass package 40 and the semiconductor substrate 10 in step 3) to promote the bonding of the two. Further, in order to protect the light-emitting diode chip 20 in the recess 12, an inert gas may be injected into the recess 12 to prevent malfunction or damage of the light-emitting diode wafer 20 due to external contamination or moisture intrusion. [0023] In the step 5), the cutting manner of the semiconductor substrate 10 can be selected depending on the specific conditions, such as mechanical cutting or laser cutting or the like. [0024] In addition, in order to further protect the LED wafer 20, a transparent sealant 60 may be placed around the LED array 20 as shown in FIG. 7 before step 3) to prevent The light-emitting diode wafer 20 cannot withstand high temperatures and is damaged when the glass package 40 and the semiconductor substrate 10 are co-fired. The thickness of the sealant 60 can be controlled to a small value range to avoid excessive filling of the recess 12 and interference with the engagement of the latching structure 44 of the subsequent glass package 40 with the recess 12. The sealant 60 may be selected from transparent materials such as silicone (si 1 icone), epoxy (polyoxy), and polycarbonate. In addition, the phosphor 60 may be doped into the encapsulant 60 surrounding the LED wafer 20 to adjust the color of the light emitted from the LED wafer 20. The phosphor powder 70 may be made of a suitable material such as a garnet structure compound, a nitride, a sulfide, an oxynitride or a citrate to make the light emitting diode wafer 20 The initial light is converted into light of different wavelengths to form a multi-band mixed light. 099126175 Form No. A0101 Page 8/24 pages 0992045912-0 201208132 [0026] [0028] ❹ Of course, the above-mentioned phosphor powder 70 can also be incorporated into the glass package 40, or as shown in FIG. The fixing of the sealant 62 to the outer surface of the glass package 40 or the inner surface of the latch structure 44 (not shown) can also achieve the effect of changing the color of the light. It can be understood that the structure of the above-mentioned light-emitting diode can be changed accordingly, and is not limited to the shape disclosed above. As shown in Fig. 9, the semiconductor substrate 10 can be changed to a flat structure in which the recesses 12 are not formed, and the light-emitting diode wafer 20a is instead directly exposed to the top surface of the semiconductor substrate 10a. To protect the light-emitting diode wafer 20a, a plurality of recesses 46a are formed in the bottom surface of the glass package 40a. When the glass package 40 is bonded to the top surface of the semiconductor substrate 10a by co-firing, the light-emitting diode wafer 20a is housed in the recess 46a, thereby achieving an effect of being isolated from the external environment. In addition, as shown in FIG. 10, in order to facilitate positioning between the glass package 40a and the semiconductor substrate 10a, a plurality of columnar latch structures 44a may be formed at the bottom of the glass package 40a, and a plurality of the semiconductor substrates 10a may be formed. The cassette structure 44a has an opening 14a of comparable size. By the cooperation of the latch structure 44a and the opening 14a, the cover layer 42a of the glass package 40a can be accurately positioned on the semiconductor substrate 10a, thereby simplifying the manufacturing process of the light-emitting diode. At the same time, the latch structure 44a is embedded in the opening 14a to enhance the bonding stability between the glass package 40a and the semiconductor substrate 10a, so that the bonding between the two is more stable. The cassette structure 44a may be integrally formed with the cover layer 42a, or may be fixed to the bottom of the cover layer 42a by other means as shown in FIG. The plurality of light-emitting diodes are formed by cutting a package of the packaged semiconductor substrates 10, 10a. The plurality of light-emitting diodes are simultaneously packaged on the same semiconductor substrate 10, 10a and then cut. 099126175 Form No. A0101 Page 9 of 24 0992045912-0 [0029] The 201208132 process can greatly reduce the time taken for manufacturing and is more conducive to mass production in the industry. Of course, the semiconductor substrate 10, 10a may be first cut into a plurality of independent small substrates, and then the subsequent processes such as solid crystal bonding and packaging may be performed one by one. This process can also obtain the same light emitting diode as the foregoing manufacturing process. Only the process is slightly more complicated. [0036] [0036] [0036] 099126175 Since the co-firing is used to fix the glass package 40, 40a and the semiconductor substrate 10, 10a, the combination between the two can be very stable Therefore, the problem of damage or peeling of the glass package 40, 40a due to the use of the adhesive in the conventional art is avoided. In summary, the present invention complies with the requirements of the invention patent and submits a patent application according to law. However, the above description is only the preferred embodiment of the present invention, and equivalent modifications or variations made by those skilled in the art of the present invention should be included in the following claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows the first step of manufacturing the light-emitting diode of the first embodiment of the present invention. Fig. 2 shows a second step of manufacturing the light-emitting diode of the first embodiment of the present invention. Fig. 3 shows a third step of manufacturing the light-emitting diode of the first embodiment of the present invention. Fig. 4 shows a fourth step of manufacturing the light-emitting diode of the first embodiment of the present invention. Fig. 5 shows the fifth step of manufacturing the light-emitting diode of the first embodiment of the present invention. Form No. A0101 Page 10 of 24 0992045912-0 201208132 [0037] Fig. 6 is a cross-sectional view showing the light-emitting diode of the first embodiment of the present invention which is manufactured. [0038] Figure 7 shows a step of fabricating a light-emitting diode of a second embodiment of the present invention. 8 shows a step of manufacturing a light-emitting diode of a third embodiment of the present invention. 9 shows a step of manufacturing a light-emitting diode of a fourth embodiment of the present invention.
[0041] 圖10示出了製造本發明第五實施例的發光二極體的一個 步驟。 [0042] 【主要元件符號說明】 基板：10、10a [0043] 凹槽：12 [0044] 開孔：14a [0045] 發光二極體晶片：20、20$ [0046] 引腳：30 [0047] 固線部：32、32a [0048] 導通部：34 [0049] 接觸部：36 [0050] 封裝體：40、40a [0051] 覆蓋層：42、42a 表單編號A0101 第11頁/共24頁 099126175 0992045912-0 201208132 [0052] 卡掣結構：44、44a [0053] 凹槽：46a [0054] 凸塊：50 [0055] 封膠：60、62 [0056] 螢光粉：70 0992045912-0 099126175 表單編號A0101 第12頁/共24頁[0041] FIG. 10 shows a step of manufacturing a light-emitting diode according to a fifth embodiment of the present invention. [Major component symbol description] Substrate: 10, 10a [0043] Groove: 12 [0044] Opening: 14a [0045] Light-emitting diode wafer: 20, 20$ [0046] Pin: 30 [0047] ] Fixed part: 32, 32a [0048] Conduction: 34 [0049] Contact: 36 [0050] Package: 40, 40a [0051] Cover: 42, 42a Form No. A0101 Page 11 of 24 099126175 0992045912-0 201208132 [0052] Cartridge structure: 44, 44a [0053] Groove: 46a [0054] Bump: 50 [0055] Sealant: 60, 62 [0056] Fluorescent powder: 70 0992045912-0 099126175 Form No. A0101 Page 12 of 24