TWI456307B - 液晶顯示裝置 - Google Patents

液晶顯示裝置 Download PDF

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TWI456307B
TWI456307B TW099129135A TW99129135A TWI456307B TW I456307 B TWI456307 B TW I456307B TW 099129135 A TW099129135 A TW 099129135A TW 99129135 A TW99129135 A TW 99129135A TW I456307 B TWI456307 B TW I456307B
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Taiwan
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liquid crystal
display device
crystal display
phosphor
light
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TW099129135A
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TW201207504A (en
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Kohsei Takahashi
Masanori Watanabe
Tetsuya Hanamoto
Masatsugu Masuda
Kenji Terashima
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Sharp Kk
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Priority claimed from JP2009200444A external-priority patent/JP5403607B2/ja
Priority claimed from JP2010138523A external-priority patent/JP2012003073A/ja
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW201207504A publication Critical patent/TW201207504A/zh
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Publication of TWI456307B publication Critical patent/TWI456307B/zh

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    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
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    • C04B35/597—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon oxynitride, e.g. SIALONS
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    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133609—Direct backlight including means for improving the color mixing, e.g. white
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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    • C04B2235/74—Physical characteristics
    • C04B2235/76—Crystal structural characteristics, e.g. symmetry
    • C04B2235/767—Hexagonal symmetry, e.g. beta-Si3N4, beta-Sialon, alpha-SiC or hexa-ferrites
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Claims (19)

  1. 一種液晶顯示裝置，其特徵為具備背光與濾光器；且前述背光具備：藍色發光之發光元件；及發光裝置，其包含吸收從前述發光元件發出之一次光的一部份而發出第1二次光之綠色螢光體及發出第2二次光之紅色螢光體；前述綠色螢光體係於具有β型Si3 N4 結晶結構之氮化物或氮氧化物之結晶中固溶有Eu與Al之β型SiAlON螢光體；前述綠色螢光體之發光光譜之半值全寬係在40~55nm之範圍內；前述濾光器係就配置於前述液晶顯示裝置之各像素之每個子像素，於平面上配置紅(R)、綠(G)、藍(B)與黃(Y)之各色用之濾光器者。
  2. 如請求項1之液晶顯示裝置，其中前述綠色螢光體之結晶中所含之氧濃度為0.1質量%以上且0.6質量%以下。
  3. 如請求項1之液晶顯示裝置，其中前述綠色螢光體之結晶中之Al濃度為0.13質量%以上且0.8質量%以下。
  4. 如請求項1之液晶顯示裝置，其中前述綠色螢光體之結晶中之Eu濃度為0.5質量%以上且4質量%以下。
  5. 如請求項1之液晶顯示裝置，其中前述綠色螢光體之發光峰值波長係在520~537nm之範圍內。
  6. 一種液晶顯示裝置，其特徵為具備背光與濾光器；且前述背光具備：藍色發光之發光元件；及發光裝置， 其包含吸收從前述發光元件發出之一次光之一部份而發出第1二次光之綠色螢光體及發出第2二次光之紅色螢光體；前述綠色螢光體係以通式(1)(M11-x Eux )a Sib AlOc Nd (1)(通式(1)中，M1係表示選自Ca、Sr及Ba之至少1種之鹼土金屬元素，其係滿足0.001≦x≦0.3、0.9≦a≦1.5、4.0≦b≦6.0、0.4≦c≦1.0、6.0≦d≦11.0之數)表示之2價銪激活氮氧化物螢光體；前述綠色螢光體之發光光譜之半值全寬係在40~55nm之範圍內；前述濾光器係就配置於前述液晶顯示裝置之各像素之每個子像素，於平面上配置紅(R)、綠(G)、藍(B)與黃(Y)之各色用之濾光器者。
  7. 如請求項6之液晶顯示裝置，其中前述通式(1)中之M1係Sr。
  8. 如請求項6之液晶顯示裝置，其中前述綠色螢光體之發光峰值波長係在510~530nm之範圍內。
  9. 如請求項1或6之液晶顯示裝置，其中前述紅色螢光體係以通式(2)(M21-y Euy )M3SiN3 (2)(通式(2)中，M2係表示選自Mg、Ca、Sr及Ba之至少1種之鹼土金屬元素，M3係表示選自Al、Ga、In、Sc、Y、La、Gd及Lu之至少1種之3價金屬元素，且其係滿足 0.001≦y≦0.10之數)表示之2價銪激活氮化物螢光體。
  10. 如請求項9之液晶顯示裝置，其中前述通式(2)中之M3係選自Al、Ga及In之至少1種之元素。
  11. 一種液晶顯示裝置，其特徵為具備背光與濾光器；且前述背光具備：藍色發光之發光元件；及發光裝置，其包含吸收從前述發光元件發出之一次光的一部份而發出第1二次光之綠色螢光體及發出第2二次光之紅色螢光體；前述綠色螢光體之發光峰值波長係在510~537nm之範圍內；前述綠色螢光體之發光光譜之半值全寬係在40~55nm之範圍內；前述濾光器係就配置於前述液晶顯示裝置之各像素之每個子像素，於平面上配置紅(R)、綠(G)、藍(B)與黃(Y)之各色用之濾光器者。
  12. 如請求項11之液晶顯示裝置，其中前述紅色螢光體之發光峰值波長係在630~680nm之範圍內。
  13. 如請求項11之液晶顯示裝置，其中前述綠色用之濾光器在波長490~530nm內具有透射率之峰值波長。
  14. 如請求項1、6或11之發光裝置，其中前述發光元件係發出具有430~480nm之峰值之一次光之氮化鎵(GaN)系半導體。
  15. 如請求項11之液晶顯示裝置，其中前述綠色螢光體係於 具有β型Si3 N4 結晶結構之氮化物或氮氧化物之結晶中固溶有Eu與Al之β型SiAlON螢光體。
  16. 如請求項11之液晶顯示裝置，其中前述綠色螢光體係以通式(1)(M11-x Eux )a Sib AlOc Nd (1)(通式(1)中，M1係表示選自Ca、Sr及Ba之至少1種之鹼土金屬元素，且其係滿足0.001≦x≦0.3、0.9≦a≦1.5、4.0≦b≦6.0、0.4≦c≦1.0、6.0≦d≦11.0之數)表示之2價銪激活氮氧化物螢光體。
  17. 如請求項11之液晶顯示裝置，其中前述紅色螢光體係以通式(2)(M21-y Euy )M3SiN3 (2)(通式(2)中，M2係表示選自Mg、Ca、Sr及Ba之至少1種之鹼土金屬元素，M3係表示選自Al、Ga、In、Sc、Y、La、Gd及Lu之至少1種之3價金屬元素，且y係滿足0.001≦y≦0.10之數)表示之2價銪激活氮化物螢光體。
  18. 如請求項11之液晶顯示裝置，其係與將RGB信號轉換為RGBY信號之電路一起被保持於框體。
  19. 如請求項11之液晶顯示裝置，其中刷新率為120Hz以上，且進行追隨前述刷新率而使擔負液晶畫面各區域的前述發光裝置之明亮度變化之局部調光驅動。
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