FR2316742B1 - - Google Patents

Info

Publication number
FR2316742B1
FR2316742B1 FR7619781A FR7619781A FR2316742B1 FR 2316742 B1 FR2316742 B1 FR 2316742B1 FR 7619781 A FR7619781 A FR 7619781A FR 7619781 A FR7619781 A FR 7619781A FR 2316742 B1 FR2316742 B1 FR 2316742B1
Authority
FR
France
Prior art keywords
source
epitaxial layer
deposited
lowered
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7619781A
Other languages
English (en)
French (fr)
Other versions
FR2316742A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of FR2316742A1 publication Critical patent/FR2316742A1/fr
Application granted granted Critical
Publication of FR2316742B1 publication Critical patent/FR2316742B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
FR7619781A 1975-06-30 1976-06-29 Transistor a effet de champ pour micro-ondes a contact d'electrodes traversant le support Granted FR2316742A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/591,690 US3986196A (en) 1975-06-30 1975-06-30 Through-substrate source contact for microwave FET

Publications (2)

Publication Number Publication Date
FR2316742A1 FR2316742A1 (fr) 1977-01-28
FR2316742B1 true FR2316742B1 (enExample) 1982-10-15

Family

ID=24367492

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7619781A Granted FR2316742A1 (fr) 1975-06-30 1976-06-29 Transistor a effet de champ pour micro-ondes a contact d'electrodes traversant le support

Country Status (6)

Country Link
US (1) US3986196A (enExample)
JP (1) JPS5214385A (enExample)
CA (1) CA1057411A (enExample)
DE (1) DE2629203A1 (enExample)
FR (1) FR2316742A1 (enExample)
GB (1) GB1547463A (enExample)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
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FR2328292A1 (fr) * 1975-10-14 1977-05-13 Thomson Csf Nouvelles structures a effet de champ
US4156879A (en) * 1977-02-07 1979-05-29 Hughes Aircraft Company Passivated V-gate GaAs field-effect transistor
US4141021A (en) * 1977-02-14 1979-02-20 Varian Associates, Inc. Field effect transistor having source and gate electrodes on opposite faces of active layer
JPS5442984A (en) * 1977-07-27 1979-04-05 Nec Corp Field effect transistor for electric power
JPS5448574U (enExample) * 1977-08-19 1979-04-04
JPS55108775A (en) * 1979-02-09 1980-08-21 Fujitsu Ltd Semiconductor device
DE2906701A1 (de) * 1979-02-21 1980-09-04 Siemens Ag Iii-v-halbleiter-leistungs-mesfet mit verbesserter waermeableitung und verfahren zur herstellung eines solchen transistors
JPS55120152A (en) * 1979-03-09 1980-09-16 Fujitsu Ltd Semiconductor device
IT8048031A0 (it) * 1979-04-09 1980-02-28 Raytheon Co Perfezionamento nei dispositivi a semiconduttore ad effetto di campo
JPS55140251A (en) * 1979-04-12 1980-11-01 Fujitsu Ltd Semiconductor device
GB2052853A (en) * 1979-06-29 1981-01-28 Ibm Vertical fet on an insulating substrate
EP0029334B1 (en) * 1979-11-15 1984-04-04 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Series-connected combination of two-terminal semiconductor devices and their fabrication
US4403241A (en) * 1980-08-22 1983-09-06 Bell Telephone Laboratories, Incorporated Method for etching III-V semiconductors and devices made by this method
US4374394A (en) * 1980-10-01 1983-02-15 Rca Corporation Monolithic integrated circuit
US4376287A (en) * 1980-10-29 1983-03-08 Rca Corporation Microwave power circuit with an active device mounted on a heat dissipating substrate
US4380022A (en) * 1980-12-09 1983-04-12 The United States Of America As Represented By The Secretary Of The Navy Monolithic fully integrated class B push-pull microwave GaAs MESFET with differential inputs and outputs with reduced Miller effect
US4498093A (en) * 1981-09-14 1985-02-05 At&T Bell Laboratories High-power III-V semiconductor device
US4348253A (en) * 1981-11-12 1982-09-07 Rca Corporation Method for fabricating via holes in a semiconductor wafer
JPS594175A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 電界効果半導体装置
EP0098167B1 (en) * 1982-06-30 1988-09-07 Fujitsu Limited A field-effect semiconductor device
US4445978A (en) * 1983-03-09 1984-05-01 Rca Corporation Method for fabricating via connectors through semiconductor wafers
JPS6074432A (ja) * 1983-09-29 1985-04-26 Nec Corp 半導体装置の製造方法
JPH079980B2 (ja) * 1985-05-23 1995-02-01 株式会社東芝 半導体装置の製造方法
DE3539402A1 (de) * 1985-11-07 1987-05-21 Rohde & Schwarz Leistungsmesssensor zum messen von hochfrequenzleistung
IT1191977B (it) * 1986-06-30 1988-03-31 Selenia Ind Elettroniche Tecnica per allineare con fotolitografia convenzionale una struttura sul retro di un campione con alta precisione di registrazione
US4970578A (en) * 1987-05-01 1990-11-13 Raytheon Company Selective backside plating of GaAs monolithic microwave integrated circuits
US4807022A (en) * 1987-05-01 1989-02-21 Raytheon Company Simultaneous formation of via hole and tub structures for GaAs monolithic microwave integrated circuits
US4800420A (en) * 1987-05-14 1989-01-24 Hughes Aircraft Company Two-terminal semiconductor diode arrangement
JPH01257355A (ja) * 1987-12-14 1989-10-13 Mitsubishi Electric Corp マイクロ波モノリシックｉｃ
JPH0215652A (ja) * 1988-07-01 1990-01-19 Mitsubishi Electric Corp 半導体装置及びその製造方法
US4998160A (en) * 1989-01-23 1991-03-05 Motorola, Inc. Substrate power supply contact for power integrated circuits
JPH02271558A (ja) * 1989-04-12 1990-11-06 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH0313735U (enExample) * 1989-06-27 1991-02-12
US5027189A (en) * 1990-01-10 1991-06-25 Hughes Aircraft Company Integrated circuit solder die-attach design and method
US5202752A (en) * 1990-05-16 1993-04-13 Nec Corporation Monolithic integrated circuit device
JP2551203B2 (ja) * 1990-06-05 1996-11-06 三菱電機株式会社 半導体装置
JP2505065B2 (ja) * 1990-10-04 1996-06-05 三菱電機株式会社 半導体装置およびその製造方法
US5166097A (en) * 1990-11-26 1992-11-24 The Boeing Company Silicon wafers containing conductive feedthroughs
JP2839376B2 (ja) * 1991-02-05 1998-12-16 三菱電機株式会社 半導体装置の製造方法
JPH05299705A (ja) * 1992-04-16 1993-11-12 Kobe Steel Ltd ダイヤモンド薄膜電子デバイス及びその製造方法
EP0590804B1 (en) * 1992-09-03 1997-02-05 STMicroelectronics, Inc. Vertically isolated monolithic bipolar high-power transistor with top collector
US5596171A (en) * 1993-05-21 1997-01-21 Harris; James M. Package for a high frequency semiconductor device and methods for fabricating and connecting the same to an external circuit
US5665649A (en) * 1993-05-21 1997-09-09 Gardiner Communications Corporation Process for forming a semiconductor device base array and mounting semiconductor devices thereon
US5517053A (en) * 1995-01-09 1996-05-14 Northrop Grumman Corporation Self stabilizing heater controlled oscillating transistor
WO1998013876A1 (fr) * 1996-09-26 1998-04-02 Samsung Electronics Co., Ltd. Circuit integre hybride et a frequences micro-ondes
US5994727A (en) * 1997-09-30 1999-11-30 Samsung Electronics Co., Ltd. High performance gaas field effect transistor structure
US6297531B2 (en) 1998-01-05 2001-10-02 International Business Machines Corporation High performance, low power vertical integrated CMOS devices
US6137129A (en) 1998-01-05 2000-10-24 International Business Machines Corporation High performance direct coupled FET memory cell
DE19801095B4 (de) 1998-01-14 2007-12-13 Infineon Technologies Ag Leistungs-MOSFET
DE19806817C1 (de) * 1998-02-18 1999-07-08 Siemens Ag EMV-optimierter Leistungsschalter
DE19846232A1 (de) * 1998-09-03 2000-03-09 Fraunhofer Ges Forschung Verfahren zur Herstellung eines Halbleiterbauelements mit Rückseitenkontaktierung
JP2002270815A (ja) * 2001-03-14 2002-09-20 Hitachi Ltd 半導体装置及びその半導体装置により構成された駆動回路
FR2837021B1 (fr) * 2002-03-11 2005-06-03 United Monolithic Semiconduct Circuit hyperfrequence de type csp
US20060091606A1 (en) * 2004-10-28 2006-05-04 Gary Paugh Magnetic building game
US7348612B2 (en) * 2004-10-29 2008-03-25 Cree, Inc. Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same
JP5022683B2 (ja) * 2006-11-30 2012-09-12 株式会社東芝 半導体装置の製造方法
DE102008033395B3 (de) 2008-07-16 2010-02-04 Austriamicrosystems Ag Verfahren zur Herstellung eines Halbleiterbauelementes und Halbleiterbauelement
US8749032B2 (en) * 2008-12-05 2014-06-10 Sige Semiconductor, Inc. Integrated circuit with improved transmission line structure and electromagnetic shielding between radio frequency circuit paths
DE102009004725A1 (de) 2009-01-15 2010-07-29 Austriamicrosystems Ag Halbleiterschaltung mit Durchkontaktierung und Verfahren zur Herstellung vertikal integrierter Schaltungen
EP2306506B1 (en) 2009-10-01 2013-07-31 ams AG Method of producing a semiconductor device having a through-wafer interconnect
US20110180855A1 (en) * 2010-01-28 2011-07-28 Gm Global Technology Operations, Inc. Non-direct bond copper isolated lateral wide band gap semiconductor device
US8907467B2 (en) 2012-03-28 2014-12-09 Infineon Technologies Ag PCB based RF-power package window frame
US10468399B2 (en) 2015-03-31 2019-11-05 Cree, Inc. Multi-cavity package having single metal flange
US9629246B2 (en) * 2015-07-28 2017-04-18 Infineon Technologies Ag PCB based semiconductor package having integrated electrical functionality
US9997476B2 (en) 2015-10-30 2018-06-12 Infineon Technologies Ag Multi-die package having different types of semiconductor dies attached to the same thermally conductive flange
US10225922B2 (en) 2016-02-18 2019-03-05 Cree, Inc. PCB based semiconductor package with impedance matching network elements integrated therein

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Publication number Priority date Publication date Assignee Title
US3323198A (en) * 1965-01-27 1967-06-06 Texas Instruments Inc Electrical interconnections
DE1933731C3 (de) * 1968-07-05 1982-03-25 Honeywell Information Systems Italia S.p.A., Caluso, Torino Verfahren zum Herstellen einer integrierten Halbleiterschaltung
US3648131A (en) * 1969-11-07 1972-03-07 Ibm Hourglass-shaped conductive connection through semiconductor structures
US3657615A (en) * 1970-06-30 1972-04-18 Westinghouse Electric Corp Low thermal impedance field effect transistor

Also Published As

Publication number Publication date
JPS5214385A (en) 1977-02-03
FR2316742A1 (fr) 1977-01-28
DE2629203A1 (de) 1977-02-03
US3986196A (en) 1976-10-12
JPS6118351B2 (enExample) 1986-05-12
DE2629203C2 (enExample) 1988-01-14
GB1547463A (en) 1979-06-20
CA1057411A (en) 1979-06-26

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Legal Events

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ST Notification of lapse