CA1057411A - Through-substrate source contact for microwave fet - Google Patents

Through-substrate source contact for microwave fet

Info

Publication number
CA1057411A
CA1057411A CA256,009A CA256009A CA1057411A CA 1057411 A CA1057411 A CA 1057411A CA 256009 A CA256009 A CA 256009A CA 1057411 A CA1057411 A CA 1057411A
Authority
CA
Canada
Prior art keywords
source
contact
substrate
electrode
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA256,009A
Other languages
English (en)
French (fr)
Inventor
Masahiro Omori
David R. Decker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Application granted granted Critical
Publication of CA1057411A publication Critical patent/CA1057411A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H10W20/20—
    • H10W40/10—
    • H10W44/20—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H10W70/682—
    • H10W70/685—
    • H10W72/07532—
    • H10W72/07533—
    • H10W72/5363—
    • H10W72/5522—
    • H10W72/59—
    • H10W72/884—
    • H10W90/754—

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
CA256,009A 1975-06-30 1976-06-29 Through-substrate source contact for microwave fet Expired CA1057411A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/591,690 US3986196A (en) 1975-06-30 1975-06-30 Through-substrate source contact for microwave FET

Publications (1)

Publication Number Publication Date
CA1057411A true CA1057411A (en) 1979-06-26

Family

ID=24367492

Family Applications (1)

Application Number Title Priority Date Filing Date
CA256,009A Expired CA1057411A (en) 1975-06-30 1976-06-29 Through-substrate source contact for microwave fet

Country Status (6)

Country Link
US (1) US3986196A (enExample)
JP (1) JPS5214385A (enExample)
CA (1) CA1057411A (enExample)
DE (1) DE2629203A1 (enExample)
FR (1) FR2316742A1 (enExample)
GB (1) GB1547463A (enExample)

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Publication number Priority date Publication date Assignee Title
DE102009004725A1 (de) 2009-01-15 2010-07-29 Austriamicrosystems Ag Halbleiterschaltung mit Durchkontaktierung und Verfahren zur Herstellung vertikal integrierter Schaltungen
US8633107B2 (en) 2009-10-01 2014-01-21 Ams Ag Method of producing a semiconductor device and semiconductor device having a through-wafer interconnect
US8658534B2 (en) 2008-07-16 2014-02-25 Ams Ag Method for producing a semiconductor component, and semiconductor component

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US4380022A (en) * 1980-12-09 1983-04-12 The United States Of America As Represented By The Secretary Of The Navy Monolithic fully integrated class B push-pull microwave GaAs MESFET with differential inputs and outputs with reduced Miller effect
US4498093A (en) * 1981-09-14 1985-02-05 At&T Bell Laboratories High-power III-V semiconductor device
US4348253A (en) * 1981-11-12 1982-09-07 Rca Corporation Method for fabricating via holes in a semiconductor wafer
DE3377960D1 (en) * 1982-06-30 1988-10-13 Fujitsu Ltd A field-effect semiconductor device
JPS594175A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 電界効果半導体装置
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JPS6074432A (ja) * 1983-09-29 1985-04-26 Nec Corp 半導体装置の製造方法
JPH079980B2 (ja) * 1985-05-23 1995-02-01 株式会社東芝 半導体装置の製造方法
DE3539402A1 (de) * 1985-11-07 1987-05-21 Rohde & Schwarz Leistungsmesssensor zum messen von hochfrequenzleistung
IT1191977B (it) * 1986-06-30 1988-03-31 Selenia Ind Elettroniche Tecnica per allineare con fotolitografia convenzionale una struttura sul retro di un campione con alta precisione di registrazione
US4970578A (en) * 1987-05-01 1990-11-13 Raytheon Company Selective backside plating of GaAs monolithic microwave integrated circuits
US4807022A (en) * 1987-05-01 1989-02-21 Raytheon Company Simultaneous formation of via hole and tub structures for GaAs monolithic microwave integrated circuits
US4800420A (en) * 1987-05-14 1989-01-24 Hughes Aircraft Company Two-terminal semiconductor diode arrangement
JPH01257355A (ja) * 1987-12-14 1989-10-13 Mitsubishi Electric Corp マイクロ波モノリシックｉｃ
JPH0215652A (ja) * 1988-07-01 1990-01-19 Mitsubishi Electric Corp 半導体装置及びその製造方法
US4998160A (en) * 1989-01-23 1991-03-05 Motorola, Inc. Substrate power supply contact for power integrated circuits
JPH02271558A (ja) * 1989-04-12 1990-11-06 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH0313735U (enExample) * 1989-06-27 1991-02-12
US5027189A (en) * 1990-01-10 1991-06-25 Hughes Aircraft Company Integrated circuit solder die-attach design and method
US5202752A (en) * 1990-05-16 1993-04-13 Nec Corporation Monolithic integrated circuit device
JP2551203B2 (ja) * 1990-06-05 1996-11-06 三菱電機株式会社 半導体装置
JP2505065B2 (ja) * 1990-10-04 1996-06-05 三菱電機株式会社 半導体装置およびその製造方法
US5166097A (en) * 1990-11-26 1992-11-24 The Boeing Company Silicon wafers containing conductive feedthroughs
JP2839376B2 (ja) * 1991-02-05 1998-12-16 三菱電機株式会社 半導体装置の製造方法
JPH05299705A (ja) * 1992-04-16 1993-11-12 Kobe Steel Ltd ダイヤモンド薄膜電子デバイス及びその製造方法
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US5517053A (en) * 1995-01-09 1996-05-14 Northrop Grumman Corporation Self stabilizing heater controlled oscillating transistor
US6002147A (en) * 1996-09-26 1999-12-14 Samsung Electronics Company Hybrid microwave-frequency integrated circuit
US5994727A (en) * 1997-09-30 1999-11-30 Samsung Electronics Co., Ltd. High performance gaas field effect transistor structure
US6297531B2 (en) 1998-01-05 2001-10-02 International Business Machines Corporation High performance, low power vertical integrated CMOS devices
US6137129A (en) 1998-01-05 2000-10-24 International Business Machines Corporation High performance direct coupled FET memory cell
DE19801095B4 (de) * 1998-01-14 2007-12-13 Infineon Technologies Ag Leistungs-MOSFET
DE19806817C1 (de) 1998-02-18 1999-07-08 Siemens Ag EMV-optimierter Leistungsschalter
DE19846232A1 (de) * 1998-09-03 2000-03-09 Fraunhofer Ges Forschung Verfahren zur Herstellung eines Halbleiterbauelements mit Rückseitenkontaktierung
JP2002270815A (ja) * 2001-03-14 2002-09-20 Hitachi Ltd 半導体装置及びその半導体装置により構成された駆動回路
FR2837021B1 (fr) * 2002-03-11 2005-06-03 United Monolithic Semiconduct Circuit hyperfrequence de type csp
US20060091606A1 (en) * 2004-10-28 2006-05-04 Gary Paugh Magnetic building game
US7348612B2 (en) * 2004-10-29 2008-03-25 Cree, Inc. Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same
JP5022683B2 (ja) * 2006-11-30 2012-09-12 株式会社東芝 半導体装置の製造方法
US8749032B2 (en) * 2008-12-05 2014-06-10 Sige Semiconductor, Inc. Integrated circuit with improved transmission line structure and electromagnetic shielding between radio frequency circuit paths
US20110180855A1 (en) * 2010-01-28 2011-07-28 Gm Global Technology Operations, Inc. Non-direct bond copper isolated lateral wide band gap semiconductor device
US8907467B2 (en) 2012-03-28 2014-12-09 Infineon Technologies Ag PCB based RF-power package window frame
US10468399B2 (en) 2015-03-31 2019-11-05 Cree, Inc. Multi-cavity package having single metal flange
US9629246B2 (en) * 2015-07-28 2017-04-18 Infineon Technologies Ag PCB based semiconductor package having integrated electrical functionality
US9997476B2 (en) 2015-10-30 2018-06-12 Infineon Technologies Ag Multi-die package having different types of semiconductor dies attached to the same thermally conductive flange
US10225922B2 (en) 2016-02-18 2019-03-05 Cree, Inc. PCB based semiconductor package with impedance matching network elements integrated therein

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US3323198A (en) * 1965-01-27 1967-06-06 Texas Instruments Inc Electrical interconnections
FR2013735A1 (enExample) * 1968-07-05 1970-04-10 Gen Electric Inf Ita
US3648131A (en) * 1969-11-07 1972-03-07 Ibm Hourglass-shaped conductive connection through semiconductor structures
US3657615A (en) * 1970-06-30 1972-04-18 Westinghouse Electric Corp Low thermal impedance field effect transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8658534B2 (en) 2008-07-16 2014-02-25 Ams Ag Method for producing a semiconductor component, and semiconductor component
DE102009004725A1 (de) 2009-01-15 2010-07-29 Austriamicrosystems Ag Halbleiterschaltung mit Durchkontaktierung und Verfahren zur Herstellung vertikal integrierter Schaltungen
US8633107B2 (en) 2009-10-01 2014-01-21 Ams Ag Method of producing a semiconductor device and semiconductor device having a through-wafer interconnect

Also Published As

Publication number Publication date
DE2629203C2 (enExample) 1988-01-14
FR2316742B1 (enExample) 1982-10-15
FR2316742A1 (fr) 1977-01-28
JPS5214385A (en) 1977-02-03
JPS6118351B2 (enExample) 1986-05-12
GB1547463A (en) 1979-06-20
US3986196A (en) 1976-10-12
DE2629203A1 (de) 1977-02-03

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