ES8106631A1 - Un metodo de fabricar un dispositivo semiconductor para ge- nerar un haz de electrones - Google Patents

Un metodo de fabricar un dispositivo semiconductor para ge- nerar un haz de electrones

Info

Publication number
ES8106631A1
ES8106631A1 ES495230A ES495230A ES8106631A1 ES 8106631 A1 ES8106631 A1 ES 8106631A1 ES 495230 A ES495230 A ES 495230A ES 495230 A ES495230 A ES 495230A ES 8106631 A1 ES8106631 A1 ES 8106631A1
Authority
ES
Spain
Prior art keywords
cathodes
cathode
generating
semiconductor device
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES495230A
Other languages
English (en)
Other versions
ES495230A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES8106631A1 publication Critical patent/ES8106631A1/es
Publication of ES495230A0 publication Critical patent/ES495230A0/es
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C1/00—Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon
    • C07C1/02—Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of a carbon
    • C07C1/04—Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of a carbon from carbon monoxide with hydrogen
    • C07C1/0425—Catalysts; their physical properties
    • C07C1/0445—Preparation; Activation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/76—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
    • B01J23/84—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36 with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • B01J23/85—Chromium, molybdenum or tungsten
    • B01J23/86—Chromium
    • B01J23/862—Iron and chromium
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C1/00—Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon
    • C07C1/02—Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of a carbon
    • C07C1/04—Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of a carbon from carbon monoxide with hydrogen
    • C07C1/0425—Catalysts; their physical properties
    • C07C1/043—Catalysts; their physical properties characterised by the composition
    • C07C1/0435—Catalysts; their physical properties characterised by the composition containing a metal of group 8 or a compound thereof
    • C07C1/044—Catalysts; their physical properties characterised by the composition containing a metal of group 8 or a compound thereof containing iron
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2521/00—Catalysts comprising the elements, oxides or hydroxides of magnesium, boron, aluminium, carbon, silicon, titanium, zirconium or hafnium
    • C07C2521/06—Silicon, titanium, zirconium or hafnium; Oxides or hydroxides thereof
    • C07C2521/08—Silica
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2523/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group C07C2521/00
    • C07C2523/16—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group C07C2521/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • C07C2523/24—Chromium, molybdenum or tungsten
    • C07C2523/26—Chromium
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2523/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group C07C2521/00
    • C07C2523/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group C07C2521/00 of the iron group metals or copper
    • C07C2523/74—Iron group metals
    • C07C2523/745—Iron
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2523/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group C07C2521/00
    • C07C2523/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group C07C2521/00 of the iron group metals or copper
    • C07C2523/76—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group C07C2521/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups C07C2523/02 - C07C2523/36
    • C07C2523/84—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group C07C2521/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups C07C2523/02 - C07C2523/36 with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • C07C2523/85—Chromium, molybdenum or tungsten
    • C07C2523/86—Chromium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)

Abstract

METODO DE FABRICAR UN DISPOSITIVO SEMICONDUCTOR GENERADOR DE ELECTRONES. CONSISTE EN UTILIZAR UN CUERPO SEMICONDUCTOR (1), POR EJEMPLO, DE SILICIO, CON UNA REGION DEL TIPO "U" EN LA SUPERFICIE DEL SEMICONDUCTOR, FORMANDO EL CONJUNTO UNA UNION "P-N". SOBRE LA SUPERFICIE DEL CUERPO (1) SE DEPOSITA UNA CAPA ELECTRICAMENTE AISLANTE (7) DE OXIDO DE SILICIO, EFECTUANDOSE DESPUES UNA ABERTURA (8), PRODUCIENDOSE EN ESTA UNA ZONA DE AGOTAMIENTO Y DANDO COMO RESULTADO UNA TENSION DE DESCARGA DISRUPTIVA MAS PEQUEÑA QUE EN EL RESTO DEL CUERPO SEMICONDUCTOR, Y COMO RESULTADO UNA GENERACION DE HAZ DE ELECTRONES (6).
ES495230A 1979-07-13 1980-09-22 Un metodo de fabricar un dispositivo semiconductor para ge- nerar un haz de electrones Granted ES495230A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7905470,A NL184589C (nl) 1979-07-13 1979-07-13 Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
ES8106631A1 true ES8106631A1 (es) 1981-06-16
ES495230A0 ES495230A0 (es) 1981-06-16

Family

ID=19833535

Family Applications (3)

Application Number Title Priority Date Filing Date
ES493310A Granted ES493310A0 (es) 1979-07-13 1980-07-11 Un dispositivo semiconductor para generar un haz de electro-nes
ES495230A Granted ES495230A0 (es) 1979-07-13 1980-09-22 Un metodo de fabricar un dispositivo semiconductor para ge- nerar un haz de electrones
ES495231A Granted ES495231A0 (es) 1979-07-13 1980-09-22 Un dispositivo de rayos catodicos

Family Applications Before (1)

Application Number Title Priority Date Filing Date
ES493310A Granted ES493310A0 (es) 1979-07-13 1980-07-11 Un dispositivo semiconductor para generar un haz de electro-nes

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES495231A Granted ES495231A0 (es) 1979-07-13 1980-09-22 Un dispositivo de rayos catodicos

Country Status (14)

Country Link
US (2) US4303930A (es)
JP (1) JPS5615529A (es)
AT (1) AT383441B (es)
AU (1) AU537044B2 (es)
BE (1) BE884289A (es)
CA (1) CA1173487A (es)
CH (1) CH652235A5 (es)
DE (1) DE3025945A1 (es)
ES (3) ES493310A0 (es)
FR (1) FR2461350A1 (es)
GB (1) GB2054959B (es)
IT (1) IT1131955B (es)
NL (1) NL184589C (es)
SE (3) SE443061B (es)

Families Citing this family (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4683399A (en) * 1981-06-29 1987-07-28 Rockwell International Corporation Silicon vacuum electron devices
NL8104893A (nl) * 1981-10-29 1983-05-16 Philips Nv Kathodestraalbuis en halfgeleiderinrichting voor toepassing in een dergelijke kathodestraalbuis.
GB2109160B (en) * 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
GB2109159B (en) * 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
NL8200875A (nl) * 1982-03-04 1983-10-03 Philips Nv Inrichting voor het opnemen of weergeven van beelden en halfgeleiderinrichting voor toepassing in een dergelijke inrichting.
US4513308A (en) * 1982-09-23 1985-04-23 The United States Of America As Represented By The Secretary Of The Navy p-n Junction controlled field emitter array cathode
NL8300631A (nl) * 1983-02-21 1984-09-17 Philips Nv Inrichting voor het opwekken van coherente straling.
DE3340777A1 (de) * 1983-11-11 1985-05-23 M.A.N. Maschinenfabrik Augsburg-Nürnberg AG, 8000 München Verfahren zur herstellung von duennfilm-feldeffekt-kathoden
NL8304444A (nl) * 1983-12-27 1985-07-16 Philips Nv Beeldbuis.
NL8400297A (nl) * 1984-02-01 1985-09-02 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel.
NL8400632A (nl) * 1984-02-29 1985-09-16 Philips Nv Inrichting voor het opwekken van elektromagnetische straling.
NL8401866A (nl) * 1984-06-13 1986-01-02 Philips Nv Inrichting ten behoeve van elektronenemissie voorzien van een elektronenemittend lichaam met een laag van uittreepotentiaal verlagend materiaal en werkwijze voor het aanbrengen van een dergelijke laag van uittreepotentiaal verlagend materiaal.
NL8403537A (nl) * 1984-11-21 1986-06-16 Philips Nv Kathodestraalbuis met ionenval.
DE3538175C2 (de) * 1984-11-21 1996-06-05 Philips Electronics Nv Halbleiteranordnung zum Erzeugen eines Elektronenstromes und ihre Verwendung
NL8403613A (nl) * 1984-11-28 1986-06-16 Philips Nv Elektronenbundelinrichting en halfgeleiderinrichting voor een dergelijke inrichting.
NL8500413A (nl) * 1985-02-14 1986-09-01 Philips Nv Electronenbundelapparaat met een halfgeleider electronenemitter.
JPH0673372B2 (ja) * 1985-06-24 1994-09-14 三菱電機株式会社 光読み取り装置及びその製造方法
GB2183899A (en) * 1985-11-29 1987-06-10 Philips Electronic Associated Electron beam addressed memory
NL8600098A (nl) * 1986-01-20 1987-08-17 Philips Nv Kathodestraalbuis met ionenval.
NL8600675A (nl) * 1986-03-17 1987-10-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom.
NL8600676A (nl) * 1986-03-17 1987-10-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom.
DE3712473A1 (de) * 1986-04-14 1987-10-15 Canon Kk Bildaufzeichnungs- und/oder bildwiedergabeeinrichtung
JPS62272439A (ja) * 1986-05-20 1987-11-26 Canon Inc 電子放出装置
US5025196A (en) * 1986-06-02 1991-06-18 Canon Kabushiki Kaisha Image forming device with beam current control
JPS6319265A (ja) * 1986-07-11 1988-01-27 Canon Inc 帯電方法
JPS6319264A (ja) * 1986-07-11 1988-01-27 Canon Inc 帯電方法
US4858062A (en) * 1986-06-04 1989-08-15 Canon Kabushiki Kaisha Charging device
JPS62290052A (ja) * 1986-06-10 1987-12-16 Canon Inc 電子放出装置
JPS62290053A (ja) * 1986-06-10 1987-12-16 Canon Inc 電子放出装置
US5691608A (en) * 1986-06-16 1997-11-25 Canon Kabushiki Kaisha Image display apparatus
JPS63950A (ja) * 1986-06-19 1988-01-05 Canon Inc 電子放出装置
US4906894A (en) * 1986-06-19 1990-03-06 Canon Kabushiki Kaisha Photoelectron beam converting device and method of driving the same
EP0256641B1 (en) * 1986-06-23 1993-12-01 Canon Kabushiki Kaisha Method and apparatus for transferring information by utilizing electron beam
JP2663384B2 (ja) * 1986-07-01 1997-10-15 キヤノン株式会社 冷陰極真空管
US4994708A (en) * 1986-07-01 1991-02-19 Canon Kabushiki Kaisha Cold cathode device
JPS6313247A (ja) * 1986-07-04 1988-01-20 Canon Inc 電子放出装置およびその製造方法
EP0251328B1 (en) * 1986-07-04 1995-01-04 Canon Kabushiki Kaisha Electron emitting device and process for producing the same
JPS6315771A (ja) * 1986-07-08 1988-01-22 Canon Inc 発光素子
JP2579912B2 (ja) * 1986-08-05 1997-02-12 キヤノン株式会社 荷電粒子発生装置
US5270990A (en) * 1986-08-15 1993-12-14 Canon Kabushiki Kaisha Tracking error signal detecting apparatus using an electron beam and apparatus for effecting recording/reproduction of information by the utilization of a plurality of electron beams
US4958104A (en) * 1986-08-20 1990-09-18 Canon Kabushiki Kaisha Display device having first and second cold cathodes
GB8621600D0 (en) * 1986-09-08 1987-03-18 Gen Electric Co Plc Vacuum devices
JPS6369133A (ja) * 1986-09-11 1988-03-29 Canon Inc 電子放出装置
US5304815A (en) * 1986-09-11 1994-04-19 Canon Kabushiki Kaisha Electron emission elements
NL8700486A (nl) * 1987-02-27 1988-09-16 Philips Nv Weergeefinrichting.
NL8700487A (nl) * 1987-02-27 1988-09-16 Philips Nv Vacuuembuis met elektronenoptiek.
GB8707975D0 (en) * 1987-04-03 1987-05-07 Philips Nv Colour cathode ray tube
USRE40062E1 (en) 1987-07-15 2008-02-12 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
USRE40566E1 (en) 1987-07-15 2008-11-11 Canon Kabushiki Kaisha Flat panel display including electron emitting device
USRE39633E1 (en) 1987-07-15 2007-05-15 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
US5749763A (en) * 1987-07-15 1998-05-12 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulted from electrodes
JP2622842B2 (ja) * 1987-10-12 1997-06-25 キヤノン株式会社 電子線画像表示装置および電子線画像表示装置の偏向方法
JP2614241B2 (ja) * 1987-10-13 1997-05-28 キヤノン株式会社 電子線発生装置
NL8702829A (nl) * 1987-11-26 1989-06-16 Philips Nv Weergeefinrichting.
JP2788243B2 (ja) * 1988-02-27 1998-08-20 キヤノン株式会社 半導体電子放出素子及び半導体電子放出装置
FR2637126B1 (fr) * 1988-09-23 1992-05-07 Thomson Csf Composant tel que diode, triode ou dispositif d'affichage cathodoluminescent plat et integre, et procede de fabrication
JPH0812763B2 (ja) * 1989-05-26 1996-02-07 シャープ株式会社 半導体トランジスタの製造方法
US5243197A (en) * 1989-06-23 1993-09-07 U.S. Philips Corp. Semiconductor device for generating an electron current
US5217401A (en) * 1989-07-07 1993-06-08 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a field-emission type switching device
US5107311A (en) * 1989-08-02 1992-04-21 Canon Kabushiki Kaisha Semiconductor light-emitting device
JP2765998B2 (ja) * 1989-10-13 1998-06-18 キヤノン株式会社 電子放出素子の製造方法
EP0416558B1 (en) * 1989-09-04 1996-07-31 Canon Kabushiki Kaisha Electron emission element and method of manufacturing the same
JPH0395825A (ja) * 1989-09-07 1991-04-22 Canon Inc 半導体電子放出素子
US5814832A (en) * 1989-09-07 1998-09-29 Canon Kabushiki Kaisha Electron emitting semiconductor device
JP2780819B2 (ja) * 1989-09-07 1998-07-30 キヤノン株式会社 半導体電子放出素子
EP0417354A1 (en) * 1989-09-15 1991-03-20 Koninklijke Philips Electronics N.V. Electron beam apparatus with charge-up compensation
US5079476A (en) * 1990-02-09 1992-01-07 Motorola, Inc. Encapsulated field emission device
US5169790A (en) * 1990-03-12 1992-12-08 Siemens Aktiengesellschaft Method of making thyristor having low reflection light-triggering structure
US5285079A (en) * 1990-03-16 1994-02-08 Canon Kabushiki Kaisha Electron emitting device, electron emitting apparatus and electron beam drawing apparatus
US5202571A (en) * 1990-07-06 1993-04-13 Canon Kabushiki Kaisha Electron emitting device with diamond
JPH0536369A (ja) * 1990-09-25 1993-02-12 Canon Inc 電子ビーム装置及びその駆動方法
JPH0512988A (ja) * 1990-10-13 1993-01-22 Canon Inc 半導体電子放出素子
US5212426A (en) * 1991-01-24 1993-05-18 Motorola, Inc. Integrally controlled field emission flat display device
NL9100122A (nl) * 1991-01-25 1992-08-17 Philips Nv Weergeefinrichting.
EP0504603B1 (en) * 1991-02-20 1997-07-16 Canon Kabushiki Kaisha Semiconductor electron emission device
US5818500A (en) * 1991-05-06 1998-10-06 Eastman Kodak Company High resolution field emission image source and image recording apparatus
US6184850B1 (en) 1991-09-04 2001-02-06 Canon Kabushiki Kaisha Image display apparatus with backlit display and method of driving the same
DE69223707T2 (de) * 1991-09-13 1998-05-20 Canon Kk Halbleiter-Elektronenemittierende Einrichtung
US5237180A (en) * 1991-12-31 1993-08-17 Eastman Kodak Company High resolution image source
FR2685811A1 (fr) * 1991-12-31 1993-07-02 Commissariat Energie Atomique Systeme permettant de maitriser la forme d'un faisceau de particules chargees.
US5600200A (en) * 1992-03-16 1997-02-04 Microelectronics And Computer Technology Corporation Wire-mesh cathode
DE69316960T2 (de) * 1992-11-12 1998-07-30 Koninkl Philips Electronics Nv Elektronenröhre mit Halbleiterkathode
EP0601637B1 (en) 1992-12-08 1999-10-27 Koninklijke Philips Electronics N.V. Cathode ray tube comprising a semiconductor cathode
DE69329253T2 (de) * 1992-12-08 2000-12-14 Koninkl Philips Electronics Nv Kathodenstrahlröhre mit Halbleiterkathode.
KR970000963B1 (ko) * 1992-12-22 1997-01-21 재단법인 한국전자통신연구소 광게이트를 갖는 진공 트랜지스터 및 그 제조방법
WO1996000977A1 (en) * 1994-06-30 1996-01-11 Philips Electronics N.V. Display device
US5550426A (en) * 1994-06-30 1996-08-27 Motorola Field emission device
US5557596A (en) * 1995-03-20 1996-09-17 Gibson; Gary Ultra-high density storage device
US5585301A (en) * 1995-07-14 1996-12-17 Micron Display Technology, Inc. Method for forming high resistance resistors for limiting cathode current in field emission displays
US5641706A (en) * 1996-01-18 1997-06-24 Micron Display Technology, Inc. Method for formation of a self-aligned N-well for isolated field emission devices
GB9616265D0 (en) * 1996-08-02 1996-09-11 Philips Electronics Uk Ltd Electron devices
TW373210B (en) * 1997-02-24 1999-11-01 Koninkl Philips Electronics Nv Electron tube having a semiconductor cathode
US6016027A (en) * 1997-05-19 2000-01-18 The Board Of Trustees Of The University Of Illinois Microdischarge lamp
JP3102783B2 (ja) * 1998-02-11 2000-10-23 三星電子株式会社 外部電界を利用して電子放出を活性化させた冷陰極電子放出素子
HUP0103631A3 (en) 1998-06-11 2004-07-28 Kolarik Vladimir Planar electron emitter (pee)
US6372607B1 (en) * 1999-06-30 2002-04-16 Intel Corporation Photodiode structure
US6992698B1 (en) * 1999-08-31 2006-01-31 Micron Technology, Inc. Integrated field emission array sensor, display, and transmitter, and apparatus including same
JP2001189121A (ja) * 2000-01-06 2001-07-10 Sony Corp 電子放出装置およびその製造方法
JP2001274390A (ja) * 2000-01-18 2001-10-05 Fuji Electric Co Ltd 高耐圧デバイスおよびその製造方法、不純物拡散領域の形成方法
US6882100B2 (en) * 2001-04-30 2005-04-19 Hewlett-Packard Development Company, L.P. Dielectric light device
US6911768B2 (en) 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6781146B2 (en) 2001-04-30 2004-08-24 Hewlett-Packard Development Company, L.P. Annealed tunneling emitter
US6753544B2 (en) * 2001-04-30 2004-06-22 Hewlett-Packard Development Company, L.P. Silicon-based dielectric tunneling emitter
US6558968B1 (en) 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer
US6914374B2 (en) * 2002-01-09 2005-07-05 Hewlett-Packard Development Company, L.P. Planar electron emitter apparatus with improved emission area and method of manufacture
US7511426B2 (en) * 2004-04-22 2009-03-31 The Board Of Trustees Of The University Of Illinois Microplasma devices excited by interdigitated electrodes
KR20050104649A (ko) * 2004-04-29 2005-11-03 삼성에스디아이 주식회사 전자 방출 표시장치
US7297041B2 (en) * 2004-10-04 2007-11-20 The Board Of Trustees Of The University Of Illinois Method of manufacturing microdischarge devices with encapsulated electrodes
US7573202B2 (en) * 2004-10-04 2009-08-11 The Board Of Trustees Of The University Of Illinois Metal/dielectric multilayer microdischarge devices and arrays
US7385350B2 (en) * 2004-10-04 2008-06-10 The Broad Of Trusstees Of The University Of Illinois Arrays of microcavity plasma devices with dielectric encapsulated electrodes
US7477017B2 (en) * 2005-01-25 2009-01-13 The Board Of Trustees Of The University Of Illinois AC-excited microcavity discharge device and method
US7884324B2 (en) * 2007-06-03 2011-02-08 Wisconsin Alumni Research Foundation Nanopillar arrays for electron emission
DE102011053684B4 (de) 2010-09-17 2019-03-28 Wisconsin Alumni Research Foundation Verfahren zur Durchführung von strahlformstossaktivierter Dissoziation im bereits bestehenden Ioneninjektionspfad eines Massenspektrometers
US9105434B2 (en) 2011-05-04 2015-08-11 The Board Of Regents Of The Nevada System Of Higher Education On Behalf Of The University Of Nevada, Las Vegas High current, high energy beam focusing element
US8507845B2 (en) 2011-06-02 2013-08-13 Wisconsin Alumni Research Foundation Membrane detector for time-of-flight mass spectrometry
DE102020113351A1 (de) * 2020-05-18 2021-11-18 Dbt Gmbh Elektronenemitterstruktur, Äußerer-Photoeffekt-Emitter, Partikelsammelvorrichtung Tunnel- Flächenemitter halbleiterbasierter Direktemitter, und Flüssigkeitsionisator mit derselben, Verfahren zum Erzeugen von freien Elektronen und Verfahren zum Sammeln von Partikeln

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3581151A (en) * 1968-09-16 1971-05-25 Bell Telephone Labor Inc Cold cathode structure comprising semiconductor whisker elements
GB1303660A (es) * 1969-11-12 1973-01-17
GB1303658A (es) * 1969-11-12 1973-01-17
CA942824A (en) * 1970-06-08 1974-02-26 Robert J. Archer Cold cathode
US3735210A (en) * 1971-06-07 1973-05-22 Rca Corp Zener diode for monolithic integrated circuits
US3808477A (en) * 1971-12-17 1974-04-30 Gen Electric Cold cathode structure
US3894332A (en) * 1972-02-11 1975-07-15 Westinghouse Electric Corp Solid state radiation sensitive field electron emitter and methods of fabrication thereof
GB1457105A (en) * 1973-06-01 1976-12-01 English Electric Valve Co Ltd Electron guns
US4079402A (en) * 1973-07-09 1978-03-14 National Semiconductor Corporation Zener diode incorporating an ion implanted layer establishing the breakdown point below the surface
US3909119A (en) * 1974-02-06 1975-09-30 Westinghouse Electric Corp Guarded planar PN junction semiconductor device
US3970887A (en) * 1974-06-19 1976-07-20 Micro-Bit Corporation Micro-structure field emission electron source
JPS5436828B2 (es) * 1974-08-16 1979-11-12
DE2445480A1 (de) * 1974-09-24 1976-04-01 Ibm Deutschland Verfahren zur herstellung eines leistungstransistors
US4099998A (en) * 1975-11-03 1978-07-11 General Electric Company Method of making zener diodes with selectively variable breakdown voltages
JPS5258379A (en) * 1975-11-08 1977-05-13 Toshiba Corp Production of semiconductor element
NL7604569A (nl) * 1976-04-29 1977-11-01 Philips Nv Veldemitterinrichting en werkwijze tot het vormen daarvan.
CA1131801A (en) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconductor device
NL184549C (nl) * 1978-01-27 1989-08-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.

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DE3025945A1 (de) 1981-01-29
NL184589C (nl) 1989-09-01
US4303930A (en) 1981-12-01
CH652235A5 (de) 1985-10-31
FR2461350A1 (fr) 1981-01-30
US4370797A (en) 1983-02-01
SE8005070L (sv) 1981-01-14
SE8009140L (sv) 1981-01-14
ES8105117A1 (es) 1981-05-16
SE443061B (sv) 1986-02-10
FR2461350B1 (es) 1984-10-19
NL7905470A (nl) 1981-01-15
JPH0145694B2 (es) 1989-10-04
AT383441B (de) 1987-07-10
IT8023378A0 (it) 1980-07-10
GB2054959A (en) 1981-02-18
ES8106632A1 (es) 1981-06-16
JPS5615529A (en) 1981-02-14
NL184589B (nl) 1989-04-03
ES495230A0 (es) 1981-06-16
IT1131955B (it) 1986-06-25
AU537044B2 (en) 1984-05-31
SE446417B (sv) 1986-09-08
ATA365480A (de) 1986-11-15
AU6033480A (en) 1981-01-15
CA1173487A (en) 1984-08-28
BE884289A (fr) 1981-01-12
GB2054959B (en) 1983-06-22
ES493310A0 (es) 1981-05-16
DE3025945C2 (es) 1987-01-02
ES495231A0 (es) 1981-06-16

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