ES477148A1 - Un dispositivo semiconductor. - Google Patents

Un dispositivo semiconductor.

Info

Publication number
ES477148A1
ES477148A1 ES477148A ES477148A ES477148A1 ES 477148 A1 ES477148 A1 ES 477148A1 ES 477148 A ES477148 A ES 477148A ES 477148 A ES477148 A ES 477148A ES 477148 A1 ES477148 A1 ES 477148A1
Authority
ES
Spain
Prior art keywords
semiconductor device
pick
well
manufacturing same
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES477148A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES477148A1 publication Critical patent/ES477148A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31781—Lithography by projection from patterned cold cathode
    • H01J2237/31784—Semiconductor cathode

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electron Beam Exposure (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Bipolar Transistors (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Semiconductor Memories (AREA)

Abstract

Un dispositivo semiconductor para generar un flujo de electrones, que comprende un cátodo que tiene un cuerpo semiconductor que comprende una unión p- n cuya zona de empobrecimiento está junco a una superficie del cuerpo semiconductor, en la cual, aplicando una tensión de sentido inverso a través de la unión p-n, se generan electrones en el cuerpo semiconductor por multiplicación de avalancha y emergen del cuerpo semiconductor, caracterizado porque la superficie tiene una capa eléctricamente aislante en la que está dispuesta al menos una abertura en la que, al menos en el estado de funcionamiento, al menos una parte de la capa de empobrecimiento asociada con la unión p-n está junto a la superficie y porque está dispuesto al menos un electrodo de aceleración en la capa eléctricamente aislante, en el borde de la abertura en la inmediata proximidad de la parte adyacente a la superficie de la capa de empobrecimiento.
ES477148A 1978-01-27 1979-01-25 Un dispositivo semiconductor. Expired ES477148A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7800987,A NL184549C (nl) 1978-01-27 1978-01-27 Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.

Publications (1)

Publication Number Publication Date
ES477148A1 true ES477148A1 (es) 1979-11-16

Family

ID=19830234

Family Applications (1)

Application Number Title Priority Date Filing Date
ES477148A Expired ES477148A1 (es) 1978-01-27 1979-01-25 Un dispositivo semiconductor.

Country Status (14)

Country Link
US (3) US4259678A (es)
JP (4) JPS54111272A (es)
AT (1) AT375782B (es)
AU (1) AU521540B2 (es)
BE (1) BE873713A (es)
CA (1) CA1131795A (es)
CH (1) CH640979A5 (es)
DE (1) DE2902746C2 (es)
ES (1) ES477148A1 (es)
FR (1) FR2415879A1 (es)
GB (2) GB2068169B (es)
IT (1) IT1110930B (es)
NL (1) NL184549C (es)
SE (1) SE438572B (es)

Families Citing this family (74)

* Cited by examiner, † Cited by third party
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NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
JPS5925387B2 (ja) * 1980-06-10 1984-06-16 株式会社東芝 半導体装置
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NL8104893A (nl) * 1981-10-29 1983-05-16 Philips Nv Kathodestraalbuis en halfgeleiderinrichting voor toepassing in een dergelijke kathodestraalbuis.
GB2109159B (en) * 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
GB2109160B (en) * 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
NL8200875A (nl) * 1982-03-04 1983-10-03 Philips Nv Inrichting voor het opnemen of weergeven van beelden en halfgeleiderinrichting voor toepassing in een dergelijke inrichting.
GB2146168A (en) * 1983-09-05 1985-04-11 Philips Electronic Associated Electron image projector
GB2147141A (en) * 1983-09-26 1985-05-01 Philips Electronic Associated Electron image projector
NL8403537A (nl) * 1984-11-21 1986-06-16 Philips Nv Kathodestraalbuis met ionenval.
DE3538175C2 (de) * 1984-11-21 1996-06-05 Philips Electronics Nv Halbleiteranordnung zum Erzeugen eines Elektronenstromes und ihre Verwendung
NL8403613A (nl) * 1984-11-28 1986-06-16 Philips Nv Elektronenbundelinrichting en halfgeleiderinrichting voor een dergelijke inrichting.
NL8500413A (nl) * 1985-02-14 1986-09-01 Philips Nv Electronenbundelapparaat met een halfgeleider electronenemitter.
US4742234A (en) * 1985-09-27 1988-05-03 American Telephone And Telegraph Company, At&T Bell Laboratories Charged-particle-beam lithography
CN86105432A (zh) * 1985-09-27 1987-05-27 美国电话电报公司 带电粒子束曝光
GB2183899A (en) * 1985-11-29 1987-06-10 Philips Electronic Associated Electron beam addressed memory
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NL8600675A (nl) * 1986-03-17 1987-10-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom.
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JPH0715603B2 (ja) * 1986-06-04 1995-02-22 キヤノン株式会社 帯電方法
US4858062A (en) * 1986-06-04 1989-08-15 Canon Kabushiki Kaisha Charging device
US5691608A (en) * 1986-06-16 1997-11-25 Canon Kabushiki Kaisha Image display apparatus
US4906894A (en) * 1986-06-19 1990-03-06 Canon Kabushiki Kaisha Photoelectron beam converting device and method of driving the same
DE3788318T2 (de) 1986-06-23 1994-06-16 Canon Kk Verfahren und Anordnung zur Datenübertragung unter Verwendung eines Elektronenstrahls.
JPS6312517A (ja) * 1986-07-02 1988-01-19 Hitachi Ltd 部品の位置決め機構
JPS6334847A (ja) * 1986-07-30 1988-02-15 Canon Inc 発光装置
US4857799A (en) * 1986-07-30 1989-08-15 Sri International Matrix-addressed flat panel display
JPH0821313B2 (ja) * 1986-08-12 1996-03-04 キヤノン株式会社 固体電子ビ−ム発生装置
US5270990A (en) * 1986-08-15 1993-12-14 Canon Kabushiki Kaisha Tracking error signal detecting apparatus using an electron beam and apparatus for effecting recording/reproduction of information by the utilization of a plurality of electron beams
EP0257489A1 (en) * 1986-08-15 1988-03-02 Canon Kabushiki Kaisha Method for generating a sound wave by utilizing electron rays etc., and optical device for controlling a light by an elastic wave generated by said method
US4958104A (en) * 1986-08-20 1990-09-18 Canon Kabushiki Kaisha Display device having first and second cold cathodes
JPS6351035A (ja) * 1986-08-20 1988-03-04 Canon Inc 蓄積型画像表示装置
JP2601464B2 (ja) * 1986-12-16 1997-04-16 キヤノン株式会社 電子放出素子
JPS63105437A (ja) * 1986-10-22 1988-05-10 Canon Inc 画像形成装置
NL8700486A (nl) * 1987-02-27 1988-09-16 Philips Nv Weergeefinrichting.
US4897552A (en) * 1987-04-28 1990-01-30 Canon Kabushiki Kaisha Multi-electron-beam pattern drawing apparatus
JPS63269445A (ja) * 1987-04-28 1988-11-07 Canon Inc 電子ビーム発生素子
JP2599591B2 (ja) * 1987-04-28 1997-04-09 キヤノン株式会社 電子放出素子特性測定装置
JPS63269529A (ja) * 1987-04-28 1988-11-07 Canon Inc 荷電ビ−ム装置
USRE40062E1 (en) * 1987-07-15 2008-02-12 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
USRE39633E1 (en) * 1987-07-15 2007-05-15 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
USRE40566E1 (en) * 1987-07-15 2008-11-11 Canon Kabushiki Kaisha Flat panel display including electron emitting device
DE3853744T2 (de) * 1987-07-15 1996-01-25 Canon Kk Elektronenemittierende Vorrichtung.
US5759080A (en) * 1987-07-15 1998-06-02 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated form electrodes
NL8702570A (nl) * 1987-10-29 1989-05-16 Philips Nv Geladen deeltjes bundel apparaat.
NL8702829A (nl) * 1987-11-26 1989-06-16 Philips Nv Weergeefinrichting.
JP2788243B2 (ja) * 1988-02-27 1998-08-20 キヤノン株式会社 半導体電子放出素子及び半導体電子放出装置
US5285129A (en) * 1988-05-31 1994-02-08 Canon Kabushiki Kaisha Segmented electron emission device
FR2637126B1 (fr) * 1988-09-23 1992-05-07 Thomson Csf Composant tel que diode, triode ou dispositif d'affichage cathodoluminescent plat et integre, et procede de fabrication
EP0416558B1 (en) * 1989-09-04 1996-07-31 Canon Kabushiki Kaisha Electron emission element and method of manufacturing the same
US5814832A (en) * 1989-09-07 1998-09-29 Canon Kabushiki Kaisha Electron emitting semiconductor device
US5202571A (en) * 1990-07-06 1993-04-13 Canon Kabushiki Kaisha Electron emitting device with diamond
JPH0536369A (ja) * 1990-09-25 1993-02-12 Canon Inc 電子ビーム装置及びその駆動方法
JPH0512988A (ja) * 1990-10-13 1993-01-22 Canon Inc 半導体電子放出素子
US5166709A (en) * 1991-02-06 1992-11-24 Delphax Systems Electron DC printer
US5144191A (en) * 1991-06-12 1992-09-01 Mcnc Horizontal microelectronic field emission devices
JPH0513136A (ja) * 1991-06-28 1993-01-22 Nec Corp Ｉｃソケツト
EP0532019B1 (en) * 1991-09-13 1997-12-29 Canon Kabushiki Kaisha Semiconductor electron emission device
JP2723405B2 (ja) * 1991-11-12 1998-03-09 松下電器産業株式会社 微細電極の形成方法
FR2685811A1 (fr) * 1991-12-31 1993-07-02 Commissariat Energie Atomique Systeme permettant de maitriser la forme d'un faisceau de particules chargees.
US5331180A (en) * 1992-04-30 1994-07-19 Fujitsu Limited Porous semiconductor light emitting device
DE69316960T2 (de) * 1992-11-12 1998-07-30 Koninkl Philips Electronics Nv Elektronenröhre mit Halbleiterkathode
DE69329253T2 (de) * 1992-12-08 2000-12-14 Koninklijke Philips Electronics N.V., Eindhoven Kathodenstrahlröhre mit Halbleiterkathode.
JPH07105831A (ja) * 1993-09-20 1995-04-21 Hewlett Packard Co <Hp> 電子集束及び偏向のための装置と方法
TW286435B (es) * 1994-07-27 1996-09-21 Siemens Ag
GB9905132D0 (en) * 1999-03-06 1999-04-28 Smiths Industries Plc Electron emitting devices
US6847045B2 (en) * 2001-10-12 2005-01-25 Hewlett-Packard Development Company, L.P. High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission
JP4274129B2 (ja) 2005-01-31 2009-06-03 セイコーエプソン株式会社 プロジェクタ

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Also Published As

Publication number Publication date
SE7900625L (sv) 1979-07-28
GB2068169A (en) 1981-08-05
JPS60241627A (ja) 1985-11-30
GB2013398B (en) 1982-09-08
DE2902746C2 (de) 1987-01-15
JPS6146931B2 (es) 1986-10-16
US4554564A (en) 1985-11-19
AU4359179A (en) 1979-08-02
IT1110930B (it) 1986-01-13
NL184549C (nl) 1989-08-16
NL184549B (nl) 1989-03-16
SE438572B (sv) 1985-04-22
GB2013398A (en) 1979-08-08
CH640979A5 (de) 1984-01-31
AU521540B2 (en) 1982-04-08
JPS5828837A (ja) 1983-02-19
GB2068169B (en) 1982-12-08
AT375782B (de) 1984-09-10
DE2902746A1 (de) 1979-08-02
JPS60241626A (ja) 1985-11-30
JPS6245691B2 (es) 1987-09-28
JPS54111272A (en) 1979-08-31
US4325084A (en) 1982-04-13
NL7800987A (nl) 1979-07-31
ATA50979A (de) 1984-01-15
IT7919567A0 (it) 1979-01-24
BE873713A (fr) 1979-07-25
FR2415879A1 (fr) 1979-08-24
CA1131795A (en) 1982-09-14
US4259678A (en) 1981-03-31
FR2415879B1 (es) 1983-07-22

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