SE7900625L - Halvledaranordning och forfarande for dess tillverkning samt pick-up-anordning och atergivningsanordning innefattande halvledaranordningen - Google Patents

Halvledaranordning och forfarande for dess tillverkning samt pick-up-anordning och atergivningsanordning innefattande halvledaranordningen

Info

Publication number
SE7900625L
SE7900625L SE7900625A SE7900625A SE7900625L SE 7900625 L SE7900625 L SE 7900625L SE 7900625 A SE7900625 A SE 7900625A SE 7900625 A SE7900625 A SE 7900625A SE 7900625 L SE7900625 L SE 7900625L
Authority
SE
Sweden
Prior art keywords
semiconductor device
pick
manufacture
procedure
reproduction
Prior art date
Application number
SE7900625A
Other languages
English (en)
Other versions
SE438572B (sv
Inventor
Gorkom G G P Van
A M E Hoeberechts
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE7900625L publication Critical patent/SE7900625L/sv
Publication of SE438572B publication Critical patent/SE438572B/sv

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31781—Lithography by projection from patterned cold cathode
    • H01J2237/31784—Semiconductor cathode

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electron Beam Exposure (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
SE7900625A 1978-01-27 1979-01-24 Halvledaranordning for alstring av ett elektronflode, forfarande for tillverkning av halvledaranordningen, samt bildatergivningsanordning der den bildalstrande elektronstralen er alstrad medelst halvledaranordningen SE438572B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7800987,A NL184549C (nl) 1978-01-27 1978-01-27 Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
SE7900625L true SE7900625L (sv) 1979-07-28
SE438572B SE438572B (sv) 1985-04-22

Family

ID=19830234

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7900625A SE438572B (sv) 1978-01-27 1979-01-24 Halvledaranordning for alstring av ett elektronflode, forfarande for tillverkning av halvledaranordningen, samt bildatergivningsanordning der den bildalstrande elektronstralen er alstrad medelst halvledaranordningen

Country Status (14)

Country Link
US (3) US4259678A (sv)
JP (4) JPS54111272A (sv)
AT (1) AT375782B (sv)
AU (1) AU521540B2 (sv)
BE (1) BE873713A (sv)
CA (1) CA1131795A (sv)
CH (1) CH640979A5 (sv)
DE (1) DE2902746C2 (sv)
ES (1) ES477148A1 (sv)
FR (1) FR2415879A1 (sv)
GB (2) GB2068169B (sv)
IT (1) IT1110930B (sv)
NL (1) NL184549C (sv)
SE (1) SE438572B (sv)

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JPH0821313B2 (ja) * 1986-08-12 1996-03-04 キヤノン株式会社 固体電子ビ−ム発生装置
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JP2723405B2 (ja) * 1991-11-12 1998-03-09 松下電器産業株式会社 微細電極の形成方法
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Also Published As

Publication number Publication date
AT375782B (de) 1984-09-10
AU4359179A (en) 1979-08-02
GB2068169B (en) 1982-12-08
CH640979A5 (de) 1984-01-31
GB2013398B (en) 1982-09-08
ES477148A1 (es) 1979-11-16
GB2068169A (en) 1981-08-05
FR2415879B1 (sv) 1983-07-22
JPS60241626A (ja) 1985-11-30
IT7919567A0 (it) 1979-01-24
AU521540B2 (en) 1982-04-08
BE873713A (fr) 1979-07-25
FR2415879A1 (fr) 1979-08-24
NL184549C (nl) 1989-08-16
JPS6245691B2 (sv) 1987-09-28
JPS54111272A (en) 1979-08-31
JPS60241627A (ja) 1985-11-30
JPS6146931B2 (sv) 1986-10-16
CA1131795A (en) 1982-09-14
NL184549B (nl) 1989-03-16
SE438572B (sv) 1985-04-22
DE2902746A1 (de) 1979-08-02
IT1110930B (it) 1986-01-13
US4554564A (en) 1985-11-19
GB2013398A (en) 1979-08-08
US4259678A (en) 1981-03-31
ATA50979A (de) 1984-01-15
DE2902746C2 (de) 1987-01-15
US4325084A (en) 1982-04-13
JPS5828837A (ja) 1983-02-19
NL7800987A (nl) 1979-07-31

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