NL7800987A - Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan, alsmede een opneeminrich- ting en een weergeefinrichting met een derge- lijke halfgeleiderinrichting. - Google Patents

Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan, alsmede een opneeminrich- ting en een weergeefinrichting met een derge- lijke halfgeleiderinrichting.

Info

Publication number
NL7800987A
NL7800987A NL7800987A NL7800987A NL7800987A NL 7800987 A NL7800987 A NL 7800987A NL 7800987 A NL7800987 A NL 7800987A NL 7800987 A NL7800987 A NL 7800987A NL 7800987 A NL7800987 A NL 7800987A
Authority
NL
Netherlands
Prior art keywords
semi
manufacture
well
conductor
guide
Prior art date
Application number
NL7800987A
Other languages
English (en)
Other versions
NL184549C (nl
NL184549B (nl
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NLAANVRAGE7800987,A priority Critical patent/NL184549C/nl
Priority to US05/971,767 priority patent/US4259678A/en
Priority to CA319,908A priority patent/CA1131795A/en
Priority to AU43591/79A priority patent/AU521540B2/en
Priority to AT0050979A priority patent/AT375782B/de
Priority to GB7902455A priority patent/GB2013398B/en
Priority to CH71579A priority patent/CH640979A5/de
Priority to GB8108219A priority patent/GB2068169B/en
Priority to IT19567/79A priority patent/IT1110930B/it
Priority to SE7900625A priority patent/SE438572B/sv
Priority to BE0/193079A priority patent/BE873713A/xx
Priority to DE19792902746 priority patent/DE2902746A1/de
Priority to DE19792954146 priority patent/DE2954146C2/de
Priority to ES477148A priority patent/ES477148A1/es
Priority to FR7902116A priority patent/FR2415879A1/fr
Priority to JP770279A priority patent/JPS54111272A/ja
Publication of NL7800987A publication Critical patent/NL7800987A/nl
Priority to US06/170,363 priority patent/US4325084A/en
Priority to US06/345,994 priority patent/US4554564A/en
Priority to JP57135294A priority patent/JPS5828837A/ja
Priority to JP60035420A priority patent/JPS60241627A/ja
Priority to JP60035419A priority patent/JPS60241626A/ja
Publication of NL184549B publication Critical patent/NL184549B/nl
Application granted granted Critical
Publication of NL184549C publication Critical patent/NL184549C/nl

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31781—Lithography by projection from patterned cold cathode
    • H01J2237/31784—Semiconductor cathode
NLAANVRAGE7800987,A 1978-01-27 1978-01-27 Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting. NL184549C (nl)

Priority Applications (21)

Application Number Priority Date Filing Date Title
NLAANVRAGE7800987,A NL184549C (nl) 1978-01-27 1978-01-27 Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.
US05/971,767 US4259678A (en) 1978-01-27 1978-12-21 Semiconductor device and method of manufacturing same, as well as a pick-up device and a display device having such a semiconductor device
CA319,908A CA1131795A (en) 1978-01-27 1979-01-18 Cold cathode semiconductor device
AU43591/79A AU521540B2 (en) 1978-01-27 1979-01-23 Semicinductor cathode device
GB7902455A GB2013398B (en) 1978-01-27 1979-01-24 Semiconductor devices their manufacture and pick-up and display devices having such a semiconductor device
CH71579A CH640979A5 (de) 1978-01-27 1979-01-24 Kathodenstrahlvorrichtung und halbleiteranordnung zur erzeugung eines elektronenstrahls in der kathodenstrahlvorrichtung.
GB8108219A GB2068169B (en) 1978-01-27 1979-01-24 Manufacturing integrated circuits and other devices by electron lithography
IT19567/79A IT1110930B (it) 1978-01-27 1979-01-24 Dispositivo semiconduttore e metodo di fabbricazione dello stesso,dispositivo di ropresa di immagini e dispositivo di visualizzazione,muniti di tale dispositivo semiconduttore
SE7900625A SE438572B (sv) 1978-01-27 1979-01-24 Halvledaranordning for alstring av ett elektronflode, forfarande for tillverkning av halvledaranordningen, samt bildatergivningsanordning der den bildalstrande elektronstralen er alstrad medelst halvledaranordningen
AT0050979A AT375782B (de) 1978-01-27 1979-01-24 Kathodenstrahlvorrichtung und verfahren zur herstellung einer halbleiteranordnung fuer eine derartige kathodenstrahlvorrichtung
BE0/193079A BE873713A (fr) 1978-01-27 1979-01-25 Dispositif semiconducteur, son procede de fabrication et dispositif d'enregistrement et dispositif de reproduction munis d'un tel dispositif semiconducteur
DE19792902746 DE2902746A1 (de) 1978-01-27 1979-01-25 Halbleiteranordnung und verfahren zu deren herstellung sowie aufnahmevorrichtung und wiedergabevorrichtung mit einer derartigen halbleiteranordnung
DE19792954146 DE2954146C2 (de) 1978-01-27 1979-01-25 Elektronenstrahllithographie-Verfahren zur Herstellung einer integrierten Schaltung oder einer Miniaturverdrahtung
ES477148A ES477148A1 (es) 1978-01-27 1979-01-25 Un dispositivo semiconductor.
FR7902116A FR2415879A1 (fr) 1978-01-27 1979-01-26 Dispositif semi-conducteur et son procede de fabrication ainsi que dispositif d'enregistrement et dispositif de reproduction munis d'un tel dispositif semi-conducteur
JP770279A JPS54111272A (en) 1978-01-27 1979-01-27 Electron current generating semiconductor* method of fabricating same and device for applying same
US06/170,363 US4325084A (en) 1978-01-27 1980-07-21 Semiconductor device and method of manufacturing same, as well as a pick-up device and a display device having such a semiconductor device
US06/345,994 US4554564A (en) 1978-01-27 1982-02-05 Semiconductor device and method of manufacturing same, as well as a pick-up device and a display device having such a semiconductor device
JP57135294A JPS5828837A (ja) 1978-01-27 1982-08-04 超小型ソリツドステ−ト装置の製造方法
JP60035420A JPS60241627A (ja) 1978-01-27 1985-02-26 電子流発生用半導体装置を具える撮像装置
JP60035419A JPS60241626A (ja) 1978-01-27 1985-02-26 電子流発生用半導体装置を具える表示装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7800987,A NL184549C (nl) 1978-01-27 1978-01-27 Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.

Publications (3)

Publication Number Publication Date
NL7800987A true NL7800987A (nl) 1979-07-31
NL184549B NL184549B (nl) 1989-03-16
NL184549C NL184549C (nl) 1989-08-16

Family

ID=19830234

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7800987,A NL184549C (nl) 1978-01-27 1978-01-27 Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.

Country Status (14)

Country Link
US (3) US4259678A (nl)
JP (4) JPS54111272A (nl)
AT (1) AT375782B (nl)
AU (1) AU521540B2 (nl)
BE (1) BE873713A (nl)
CA (1) CA1131795A (nl)
CH (1) CH640979A5 (nl)
DE (1) DE2902746A1 (nl)
ES (1) ES477148A1 (nl)
FR (1) FR2415879A1 (nl)
GB (2) GB2013398B (nl)
IT (1) IT1110930B (nl)
NL (1) NL184549C (nl)
SE (1) SE438572B (nl)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3538176A1 (de) * 1984-11-21 1986-05-22 N.V. Philips' Gloeilampenfabrieken, Eindhoven Elektronenstrahlroehre mit ionenfalle

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL184549C (nl) * 1978-01-27 1989-08-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.
NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
JPS5925387B2 (ja) * 1980-06-10 1984-06-16 株式会社東芝 半導体装置
US4683399A (en) * 1981-06-29 1987-07-28 Rockwell International Corporation Silicon vacuum electron devices
NL8104893A (nl) * 1981-10-29 1983-05-16 Philips Nv Kathodestraalbuis en halfgeleiderinrichting voor toepassing in een dergelijke kathodestraalbuis.
GB2109159B (en) * 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
GB2109160B (en) * 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
NL8200875A (nl) * 1982-03-04 1983-10-03 Philips Nv Inrichting voor het opnemen of weergeven van beelden en halfgeleiderinrichting voor toepassing in een dergelijke inrichting.
GB2146168A (en) * 1983-09-05 1985-04-11 Philips Electronic Associated Electron image projector
GB2147141A (en) * 1983-09-26 1985-05-01 Philips Electronic Associated Electron image projector
DE3538175C2 (de) * 1984-11-21 1996-06-05 Philips Electronics Nv Halbleiteranordnung zum Erzeugen eines Elektronenstromes und ihre Verwendung
NL8403613A (nl) * 1984-11-28 1986-06-16 Philips Nv Elektronenbundelinrichting en halfgeleiderinrichting voor een dergelijke inrichting.
NL8500413A (nl) * 1985-02-14 1986-09-01 Philips Nv Electronenbundelapparaat met een halfgeleider electronenemitter.
US4742234A (en) * 1985-09-27 1988-05-03 American Telephone And Telegraph Company, At&T Bell Laboratories Charged-particle-beam lithography
CN86105432A (zh) * 1985-09-27 1987-05-27 美国电话电报公司 带电粒子束曝光
GB2183899A (en) * 1985-11-29 1987-06-10 Philips Electronic Associated Electron beam addressed memory
US4763043A (en) * 1985-12-23 1988-08-09 Raytheon Company P-N junction semiconductor secondary emission cathode and tube
JPS62155517A (ja) * 1985-12-27 1987-07-10 Canon Inc パターン描画装置及び方法
GB8601421D0 (en) * 1986-01-21 1986-02-26 Welding Inst Charged particle beam generator
FR2595162B1 (fr) * 1986-02-28 1988-05-06 Labo Electronique Physique Dispositif d'enregistrement et de restitution de signaux electriques muni d'un predeclenchement, comprenant un dispositif a transfert de charges et oscilloscope utilisant un tel dispositif
NL8600675A (nl) * 1986-03-17 1987-10-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom.
DE3712473A1 (de) * 1986-04-14 1987-10-15 Canon Kk Bildaufzeichnungs- und/oder bildwiedergabeeinrichtung
US5025196A (en) * 1986-06-02 1991-06-18 Canon Kabushiki Kaisha Image forming device with beam current control
JPS62284590A (ja) * 1986-06-02 1987-12-10 Canon Inc 画像形成装置
JPH0715603B2 (ja) * 1986-06-04 1995-02-22 キヤノン株式会社 帯電方法
US4858062A (en) * 1986-06-04 1989-08-15 Canon Kabushiki Kaisha Charging device
US5691608A (en) * 1986-06-16 1997-11-25 Canon Kabushiki Kaisha Image display apparatus
US4906894A (en) * 1986-06-19 1990-03-06 Canon Kabushiki Kaisha Photoelectron beam converting device and method of driving the same
EP0256641B1 (en) * 1986-06-23 1993-12-01 Canon Kabushiki Kaisha Method and apparatus for transferring information by utilizing electron beam
JPS6312517A (ja) * 1986-07-02 1988-01-19 Hitachi Ltd 部品の位置決め機構
US4857799A (en) * 1986-07-30 1989-08-15 Sri International Matrix-addressed flat panel display
JPS6334847A (ja) * 1986-07-30 1988-02-15 Canon Inc 発光装置
JPH0821313B2 (ja) * 1986-08-12 1996-03-04 キヤノン株式会社 固体電子ビ−ム発生装置
EP0257489A1 (en) * 1986-08-15 1988-03-02 Canon Kabushiki Kaisha Method for generating a sound wave by utilizing electron rays etc., and optical device for controlling a light by an elastic wave generated by said method
US5270990A (en) * 1986-08-15 1993-12-14 Canon Kabushiki Kaisha Tracking error signal detecting apparatus using an electron beam and apparatus for effecting recording/reproduction of information by the utilization of a plurality of electron beams
JPS6351035A (ja) * 1986-08-20 1988-03-04 Canon Inc 蓄積型画像表示装置
US4958104A (en) * 1986-08-20 1990-09-18 Canon Kabushiki Kaisha Display device having first and second cold cathodes
JP2601464B2 (ja) * 1986-12-16 1997-04-16 キヤノン株式会社 電子放出素子
JPS63105437A (ja) * 1986-10-22 1988-05-10 Canon Inc 画像形成装置
NL8700486A (nl) * 1987-02-27 1988-09-16 Philips Nv Weergeefinrichting.
JPS63269445A (ja) * 1987-04-28 1988-11-07 Canon Inc 電子ビーム発生素子
JP2599591B2 (ja) * 1987-04-28 1997-04-09 キヤノン株式会社 電子放出素子特性測定装置
JPS63269529A (ja) * 1987-04-28 1988-11-07 Canon Inc 荷電ビ−ム装置
US4897552A (en) * 1987-04-28 1990-01-30 Canon Kabushiki Kaisha Multi-electron-beam pattern drawing apparatus
USRE40062E1 (en) * 1987-07-15 2008-02-12 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
USRE39633E1 (en) * 1987-07-15 2007-05-15 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
USRE40566E1 (en) * 1987-07-15 2008-11-11 Canon Kabushiki Kaisha Flat panel display including electron emitting device
US5066883A (en) * 1987-07-15 1991-11-19 Canon Kabushiki Kaisha Electron-emitting device with electron-emitting region insulated from electrodes
US5759080A (en) * 1987-07-15 1998-06-02 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated form electrodes
NL8702570A (nl) * 1987-10-29 1989-05-16 Philips Nv Geladen deeltjes bundel apparaat.
NL8702829A (nl) * 1987-11-26 1989-06-16 Philips Nv Weergeefinrichting.
JP2788243B2 (ja) * 1988-02-27 1998-08-20 キヤノン株式会社 半導体電子放出素子及び半導体電子放出装置
US5285129A (en) * 1988-05-31 1994-02-08 Canon Kabushiki Kaisha Segmented electron emission device
FR2637126B1 (fr) * 1988-09-23 1992-05-07 Thomson Csf Composant tel que diode, triode ou dispositif d'affichage cathodoluminescent plat et integre, et procede de fabrication
DE69027960T2 (de) * 1989-09-04 1997-01-09 Canon Kk Elektronen emittierendes Element und Verfahren zur Herstellung desselben
US5814832A (en) * 1989-09-07 1998-09-29 Canon Kabushiki Kaisha Electron emitting semiconductor device
US5202571A (en) * 1990-07-06 1993-04-13 Canon Kabushiki Kaisha Electron emitting device with diamond
JPH0536369A (ja) * 1990-09-25 1993-02-12 Canon Inc 電子ビーム装置及びその駆動方法
JPH0512988A (ja) * 1990-10-13 1993-01-22 Canon Inc 半導体電子放出素子
US5166709A (en) * 1991-02-06 1992-11-24 Delphax Systems Electron DC printer
US5144191A (en) * 1991-06-12 1992-09-01 Mcnc Horizontal microelectronic field emission devices
JPH0513136A (ja) * 1991-06-28 1993-01-22 Nec Corp Ｉｃソケツト
EP0532019B1 (en) * 1991-09-13 1997-12-29 Canon Kabushiki Kaisha Semiconductor electron emission device
JP2723405B2 (ja) * 1991-11-12 1998-03-09 松下電器産業株式会社 微細電極の形成方法
FR2685811A1 (fr) * 1991-12-31 1993-07-02 Commissariat Energie Atomique Systeme permettant de maitriser la forme d'un faisceau de particules chargees.
US5331180A (en) * 1992-04-30 1994-07-19 Fujitsu Limited Porous semiconductor light emitting device
DE69316960T2 (de) * 1992-11-12 1998-07-30 Koninkl Philips Electronics Nv Elektronenröhre mit Halbleiterkathode
DE69329253T2 (de) * 1992-12-08 2000-12-14 Koninkl Philips Electronics Nv Kathodenstrahlröhre mit Halbleiterkathode.
DE69407015T2 (de) * 1993-09-20 1998-03-19 Hewlett Packard Co Fokussier- und Ablenkelektroden für Elektronenquellen
TW286435B (nl) * 1994-07-27 1996-09-21 Siemens Ag
GB9905132D0 (en) * 1999-03-06 1999-04-28 Smiths Industries Plc Electron emitting devices
US6847045B2 (en) * 2001-10-12 2005-01-25 Hewlett-Packard Development Company, L.P. High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission
JP4274129B2 (ja) 2005-01-31 2009-06-03 セイコーエプソン株式会社 プロジェクタ

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2912592A (en) * 1954-10-07 1959-11-10 Horizons Inc Memory device
NL107624C (nl) * 1955-09-01
US3060327A (en) * 1959-07-02 1962-10-23 Bell Telephone Labor Inc Transistor having emitter reversebiased beyond breakdown and collector forward-biased for majority carrier operation
US3363240A (en) * 1964-06-22 1968-01-09 Burroughs Corp Solid state electron emissive memory and display apparatus and method
GB1198567A (en) * 1968-05-17 1970-07-15 Gen Electric & English Elect Improvements in or relating to Electric Discharge Devices.
US3581151A (en) * 1968-09-16 1971-05-25 Bell Telephone Labor Inc Cold cathode structure comprising semiconductor whisker elements
GB1303659A (nl) * 1969-11-12 1973-01-17
GB1303660A (nl) * 1969-11-12 1973-01-17
GB1303658A (nl) * 1969-11-12 1973-01-17
US3755704A (en) * 1970-02-06 1973-08-28 Stanford Research Inst Field emission cathode structures and devices utilizing such structures
CA942824A (en) * 1970-06-08 1974-02-26 Robert J. Archer Cold cathode
US3808477A (en) * 1971-12-17 1974-04-30 Gen Electric Cold cathode structure
US3882355A (en) * 1972-12-29 1975-05-06 Ibm Flat screen display device using controlled cold cathodes
GB1457105A (en) * 1973-06-01 1976-12-01 English Electric Valve Co Ltd Electron guns
US4000503A (en) * 1976-01-02 1976-12-28 International Audio Visual, Inc. Cold cathode for infrared image tube
NL7604569A (nl) * 1976-04-29 1977-11-01 Philips Nv Veldemitterinrichting en werkwijze tot het vormen daarvan.
NL184549C (nl) * 1978-01-27 1989-08-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3538176A1 (de) * 1984-11-21 1986-05-22 N.V. Philips' Gloeilampenfabrieken, Eindhoven Elektronenstrahlroehre mit ionenfalle

Also Published As

Publication number Publication date
ES477148A1 (es) 1979-11-16
DE2902746A1 (de) 1979-08-02
GB2068169A (en) 1981-08-05
AT375782B (de) 1984-09-10
BE873713A (fr) 1979-07-25
CH640979A5 (de) 1984-01-31
JPS60241627A (ja) 1985-11-30
GB2068169B (en) 1982-12-08
JPS6146931B2 (nl) 1986-10-16
JPS60241626A (ja) 1985-11-30
US4325084A (en) 1982-04-13
JPS54111272A (en) 1979-08-31
FR2415879B1 (nl) 1983-07-22
JPS6245691B2 (nl) 1987-09-28
DE2902746C2 (nl) 1987-01-15
ATA50979A (de) 1984-01-15
GB2013398B (en) 1982-09-08
GB2013398A (en) 1979-08-08
US4554564A (en) 1985-11-19
JPS5828837A (ja) 1983-02-19
IT1110930B (it) 1986-01-13
CA1131795A (en) 1982-09-14
FR2415879A1 (fr) 1979-08-24
AU521540B2 (en) 1982-04-08
SE438572B (sv) 1985-04-22
AU4359179A (en) 1979-08-02
US4259678A (en) 1981-03-31
NL184549C (nl) 1989-08-16
IT7919567A0 (it) 1979-01-24
NL184549B (nl) 1989-03-16
SE7900625L (sv) 1979-07-28

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