GB1303660A - - Google Patents

Info

Publication number
GB1303660A
GB1303660A GB1303660DA GB1303660A GB 1303660 A GB1303660 A GB 1303660A GB 1303660D A GB1303660D A GB 1303660DA GB 1303660 A GB1303660 A GB 1303660A
Authority
GB
United Kingdom
Prior art keywords
junction
cathode
edge
breakdown voltage
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1303660A publication Critical patent/GB1303660A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers

Landscapes

  • Bipolar Transistors (AREA)
GB1303660D 1969-11-12 1969-11-12 Expired GB1303660A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5545369 1969-11-12

Publications (1)

Publication Number Publication Date
GB1303660A true GB1303660A (nl) 1973-01-17

Family

ID=10473954

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1303660D Expired GB1303660A (nl) 1969-11-12 1969-11-12

Country Status (1)

Country Link
GB (1) GB1303660A (nl)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2902746A1 (de) * 1978-01-27 1979-08-02 Philips Nv Halbleiteranordnung und verfahren zu deren herstellung sowie aufnahmevorrichtung und wiedergabevorrichtung mit einer derartigen halbleiteranordnung
DE3025945A1 (de) * 1979-07-13 1981-01-29 Philips Nv Halbleiteranordnung und verfahren zu deren herstellung, sowie aufnahmeroehre und wiedergabevorrichtung mit einer derartigen halbleiteranordnung
US4871911A (en) * 1985-02-14 1989-10-03 U.S. Philips Corporation Electron beam apparatus comprising a semiconductor electron emitter
GB2347785A (en) * 1999-03-06 2000-09-13 Smiths Industries Plc Electron-emitting devices
EP0890184B1 (en) * 1996-03-27 2009-07-08 Cree, Inc. A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR LAYER OF SiC

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2902746A1 (de) * 1978-01-27 1979-08-02 Philips Nv Halbleiteranordnung und verfahren zu deren herstellung sowie aufnahmevorrichtung und wiedergabevorrichtung mit einer derartigen halbleiteranordnung
DE3025945A1 (de) * 1979-07-13 1981-01-29 Philips Nv Halbleiteranordnung und verfahren zu deren herstellung, sowie aufnahmeroehre und wiedergabevorrichtung mit einer derartigen halbleiteranordnung
US4871911A (en) * 1985-02-14 1989-10-03 U.S. Philips Corporation Electron beam apparatus comprising a semiconductor electron emitter
EP0890184B1 (en) * 1996-03-27 2009-07-08 Cree, Inc. A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR LAYER OF SiC
GB2347785A (en) * 1999-03-06 2000-09-13 Smiths Industries Plc Electron-emitting devices
GB2347785B (en) * 1999-03-06 2003-12-17 Smiths Industries Plc Electron-emitting devices

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees