GB1514976A - Hyperfrequency device with gunn effect - Google Patents

Hyperfrequency device with gunn effect

Info

Publication number
GB1514976A
GB1514976A GB49122/75A GB4912275A GB1514976A GB 1514976 A GB1514976 A GB 1514976A GB 49122/75 A GB49122/75 A GB 49122/75A GB 4912275 A GB4912275 A GB 4912275A GB 1514976 A GB1514976 A GB 1514976A
Authority
GB
United Kingdom
Prior art keywords
zones
type
active layer
gunn effect
nov
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB49122/75A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1514976A publication Critical patent/GB1514976A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10N80/107—Gunn diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

1514976 Gunn effect devices THOMSONCSF 28 Nov 1975 [29 Nov 1974] 49122/75 Heading H1K A Gunn effect device maintained in the L.S.A. mode by the condition n. d < 10<SP>11</SP> cm.<SP>-2</SP> (where n = carrier concentration and d = width of the active zone perpendicular to the current direction) comprises, on a highly doped substrate 1, e.g. of N<SP>+</SP> GaAs, an active layer 2, e.g. of epitaxial N-type GeAs, having thereon blocking zones B below which form space charge zones 6 extending at least through the thickness of the active layer 2, and conducting zones A which overlie channels 7 through the layer 2 the width d of which is determined by the adjacent space charge zones 6. For an N-type active layer 2 the conducting zones A may comprise epitaxial N<SP>+</SP> zones or metal layers, e.g. of Ge-Au alloy. The blocking zones B may comprise P-type material, e.g. formed by ion implantation, or a Schottky barrier-forming metal such as Pt or Ni. Various combinations and configurations are disclosed. If the zones A are N<SP>+</SP> type and the zones B are P-type separate bias sources may be connected thereto, but in general a single bias source suffices connected to a common cathode contact 5.
GB49122/75A 1974-11-29 1975-11-28 Hyperfrequency device with gunn effect Expired GB1514976A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7439192A FR2293069A1 (en) 1974-11-29 1974-11-29 GUNN EFFECT HYPERFREQUENCY DEVICE

Publications (1)

Publication Number Publication Date
GB1514976A true GB1514976A (en) 1978-06-21

Family

ID=9145399

Family Applications (1)

Application Number Title Priority Date Filing Date
GB49122/75A Expired GB1514976A (en) 1974-11-29 1975-11-28 Hyperfrequency device with gunn effect

Country Status (4)

Country Link
JP (1) JPS5856988B2 (en)
DE (1) DE2553659C2 (en)
FR (1) FR2293069A1 (en)
GB (1) GB1514976A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4238763A (en) * 1977-08-10 1980-12-09 National Research Development Corporation Solid state microwave devices with small active contact and large passive contact
FR2648276A1 (en) * 1989-06-13 1990-12-14 Thomson Csf GUNN EFFECT COMPONENT COMPRISING AN ELECTRON INJECTION DEVICE

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3600705A (en) * 1969-02-27 1971-08-17 Gen Electric Highly efficient subcritically doped electron-transfer effect devices
GB1354511A (en) * 1970-04-22 1974-06-05 Secr Defence Semiconductor devices

Also Published As

Publication number Publication date
DE2553659C2 (en) 1984-10-25
FR2293069A1 (en) 1976-06-25
JPS5199479A (en) 1976-09-02
FR2293069B1 (en) 1977-03-25
JPS5856988B2 (en) 1983-12-17
DE2553659A1 (en) 1976-08-12

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee