GB1354511A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1354511A GB1354511A GB1935070A GB1354511DA GB1354511A GB 1354511 A GB1354511 A GB 1354511A GB 1935070 A GB1935070 A GB 1935070A GB 1354511D A GB1354511D A GB 1354511DA GB 1354511 A GB1354511 A GB 1354511A
- Authority
- GB
- United Kingdom
- Prior art keywords
- anode
- cathode
- lowest
- energy
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910000846 In alloy Inorganic materials 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
- 230000027756 respiratory electron transport chain Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
- H10N80/10—Gunn-effect devices
- H10N80/107—Gunn diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/005—Antimonides of gallium or indium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/90—Bulk effect device making
Landscapes
- Junction Field-Effect Transistors (AREA)
- Thyristors (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
1354511 Bulk-effect oscillators DEFENCE SECRETARY OF STATE FOR 19 April 1971 [22 April 1970] 19350/70 Heading H1K A bulk negative-resistance effect device cornprises two electrodes on a semi-conductor body which exhibits transferred electron effects between three sets of conduction band valleys of different energies, the set of lowest energy having the least density of states, and the rate at which electrons are scattered between the set of lowest and the set of intermediate energy is less than that for scattering between the other two pairs of sets. Furthermore the arrangement is such that under appropriate biasing, though electron transfer occurs between the set of lowest and set of highest energy and between these and the set of intermediate energy the resulting current is free of dipole domains. InP, with an impurity concentration less than 10<SP>17</SP>/ cm.<SP>3</SP> are suitable materials. A non-domain continuous oscillation mode of operation is achieved by arranging for the electric field to be highest adjacent the anode, as by tapering the body, making the anode smaller than the cathode, or by locating it on a higher resistivity zone, provided the effective anode cathode spacing is less than 500 Á. Suitable electrode materials for N type bodies are tin and tin-indium alloys, which may include zinc to form said high resistivity zone. In one arrangement suitable for mounting in a resonant cavity as in Fig. 16 (not shown) the anode consists of a series of dots or a grid, with the cathode on the opposite side of the body. Alternatively anode and cathode are located side by side or the anode located within an annular cathode. Details are given of solution, vapour and liquid epitaxial methods of growing suitable materials, which may be disposed on substrates acting as heat sinks and/ or electrodes.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1935070 | 1970-04-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1354511A true GB1354511A (en) | 1974-06-05 |
Family
ID=10127886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1935070A Expired GB1354511A (en) | 1970-04-22 | 1970-04-22 | Semiconductor devices |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3667003A (en) |
| CA (1) | CA948790A (en) |
| DE (1) | DE2119772A1 (en) |
| FR (1) | FR2092073B1 (en) |
| GB (1) | GB1354511A (en) |
| NL (1) | NL7105412A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2553659A1 (en) * | 1974-11-29 | 1976-08-12 | Thomson Csf | HIGH FREQUENCY DEVICE WORKING WITH THE GUNN EFFECT |
| DE2620980A1 (en) * | 1975-05-13 | 1976-12-02 | Secr Defence Brit | TRANSMISSION ELECTRONIC ARRANGEMENT |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1450998A (en) * | 1974-03-29 | 1976-09-29 | Secr Defence | Transferred electron devices |
| FR2385227A1 (en) * | 1977-03-25 | 1978-10-20 | Thomson Csf | MODULAR GUNN EFFECT DEVICE BY CODE PULSES, AND PARALLEL-SERIAL DIGITAL CONVERTER USING SUCH A DEVICE |
| US4396931A (en) * | 1981-06-12 | 1983-08-02 | International Business Machines Corporation | Tunnel emitter upper valley transistor |
| FR2601507B1 (en) * | 1986-07-09 | 1988-10-07 | Thomson Csf | ELECTRON TRANSFER DIODE WITH PERIODIC BALLISTIC REGIONS |
-
1970
- 1970-04-22 GB GB1935070A patent/GB1354511A/en not_active Expired
-
1971
- 1971-04-21 FR FR7114234A patent/FR2092073B1/fr not_active Expired
- 1971-04-21 CA CA110,934A patent/CA948790A/en not_active Expired
- 1971-04-21 NL NL7105412A patent/NL7105412A/xx unknown
- 1971-04-21 US US136152A patent/US3667003A/en not_active Expired - Lifetime
- 1971-04-22 DE DE19712119772 patent/DE2119772A1/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2553659A1 (en) * | 1974-11-29 | 1976-08-12 | Thomson Csf | HIGH FREQUENCY DEVICE WORKING WITH THE GUNN EFFECT |
| DE2620980A1 (en) * | 1975-05-13 | 1976-12-02 | Secr Defence Brit | TRANSMISSION ELECTRONIC ARRANGEMENT |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7105412A (en) | 1971-10-26 |
| CA948790A (en) | 1974-06-04 |
| FR2092073B1 (en) | 1975-01-17 |
| US3667003A (en) | 1972-05-30 |
| FR2092073A1 (en) | 1972-01-21 |
| DE2119772A1 (en) | 1971-12-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |