GB1147355A - Improvements in or relating to semi-conductor switching elements - Google Patents

Improvements in or relating to semi-conductor switching elements

Info

Publication number
GB1147355A
GB1147355A GB48188/66A GB4818866A GB1147355A GB 1147355 A GB1147355 A GB 1147355A GB 48188/66 A GB48188/66 A GB 48188/66A GB 4818866 A GB4818866 A GB 4818866A GB 1147355 A GB1147355 A GB 1147355A
Authority
GB
United Kingdom
Prior art keywords
antimony
layer
semi
electrode
selenium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB48188/66A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Danfoss AS
Original Assignee
Danfoss AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Danfoss AS filed Critical Danfoss AS
Publication of GB1147355A publication Critical patent/GB1147355A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Thermistors And Varistors (AREA)

Abstract

1,147,355. Semi-conductor devices. DANFOSS A/S. 27 Oct., 1966 [10 Nov., 1965], No. 48188/66. Heading H1K. A junctionless non-rectifying solid state switching device comprises a body composed of substantially stoichiometric proportions of antimony and an element from Group VI of the Periodic Table and provided with opposed electrodes spaced from each other by less than 1 mm. of body material. The Group VI element is preferably sulphur or selenium and the antimony may be present in an excess not exceeding 1% by weight. In a preferred embodiment antimony and selenium are applied by cathodic evaporation to a large metal electrode 1 to form a layer 2 100 Á thick and electrodes 3 are provided on the opposite surface of the layer. The layer is initially amorphous, but crystalline conductive channels are formed between each electrode 3 and the electrode 1 by means of a current pulse or externally applied heat.
GB48188/66A 1965-11-10 1966-10-27 Improvements in or relating to semi-conductor switching elements Expired GB1147355A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1965D0048616 DE1261252C2 (en) 1965-11-10 1965-11-10 Electronic, bistable, barrier-free semiconductor switching element and method for its production

Publications (1)

Publication Number Publication Date
GB1147355A true GB1147355A (en) 1969-04-02

Family

ID=7051308

Family Applications (1)

Application Number Title Priority Date Filing Date
GB48188/66A Expired GB1147355A (en) 1965-11-10 1966-10-27 Improvements in or relating to semi-conductor switching elements

Country Status (7)

Country Link
AT (1) AT266264B (en)
BE (1) BE688955A (en)
CH (1) CH454297A (en)
DE (1) DE1261252C2 (en)
FR (1) FR1498954A (en)
GB (1) GB1147355A (en)
NL (1) NL6615217A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7515454B2 (en) 2006-08-02 2009-04-07 Infineon Technologies Ag CBRAM cell and CBRAM array, and method of operating thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3203803B2 (en) * 1992-09-01 2001-08-27 株式会社デンソー Thermistor type temperature sensor
DE102005001253A1 (en) * 2005-01-11 2006-07-20 Infineon Technologies Ag Memory cell arrangement for solid electrolyte memory cells has lower electrode and upper electrode and activated solid electrolyte material area between them as memory material area and whole of material area is coherently designed

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2816228A (en) * 1953-05-21 1957-12-10 Rca Corp Semiconductor phase shift oscillator and device
US2968014A (en) * 1959-04-01 1961-01-10 Kentucky Res Foundation Synthetic stibnite crystal and method for producing the same
BE622534A (en) * 1961-09-19

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7515454B2 (en) 2006-08-02 2009-04-07 Infineon Technologies Ag CBRAM cell and CBRAM array, and method of operating thereof

Also Published As

Publication number Publication date
FR1498954A (en) 1967-10-20
BE688955A (en) 1967-03-31
CH454297A (en) 1968-04-15
DE1261252C2 (en) 1974-01-03
AT266264B (en) 1968-11-11
NL6615217A (en) 1967-05-11
DE1261252B (en) 1968-02-15

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