GB1147355A - Improvements in or relating to semi-conductor switching elements - Google Patents
Improvements in or relating to semi-conductor switching elementsInfo
- Publication number
- GB1147355A GB1147355A GB48188/66A GB4818866A GB1147355A GB 1147355 A GB1147355 A GB 1147355A GB 48188/66 A GB48188/66 A GB 48188/66A GB 4818866 A GB4818866 A GB 4818866A GB 1147355 A GB1147355 A GB 1147355A
- Authority
- GB
- United Kingdom
- Prior art keywords
- antimony
- layer
- semi
- electrode
- selenium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910052787 antimony Inorganic materials 0.000 abstract 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 2
- 229910052711 selenium Inorganic materials 0.000 abstract 2
- 239000011669 selenium Substances 0.000 abstract 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 1
- 239000005864 Sulphur Substances 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 229910021476 group 6 element Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000000737 periodic effect Effects 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of switching materials after formation, e.g. doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Thermistors And Varistors (AREA)
Abstract
1,147,355. Semi-conductor devices. DANFOSS A/S. 27 Oct., 1966 [10 Nov., 1965], No. 48188/66. Heading H1K. A junctionless non-rectifying solid state switching device comprises a body composed of substantially stoichiometric proportions of antimony and an element from Group VI of the Periodic Table and provided with opposed electrodes spaced from each other by less than 1 mm. of body material. The Group VI element is preferably sulphur or selenium and the antimony may be present in an excess not exceeding 1% by weight. In a preferred embodiment antimony and selenium are applied by cathodic evaporation to a large metal electrode 1 to form a layer 2 100 Á thick and electrodes 3 are provided on the opposite surface of the layer. The layer is initially amorphous, but crystalline conductive channels are formed between each electrode 3 and the electrode 1 by means of a current pulse or externally applied heat.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1965D0048616 DE1261252C2 (en) | 1965-11-10 | 1965-11-10 | Electronic, bistable, barrier-free semiconductor switching element and method for its production |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1147355A true GB1147355A (en) | 1969-04-02 |
Family
ID=7051308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB48188/66A Expired GB1147355A (en) | 1965-11-10 | 1966-10-27 | Improvements in or relating to semi-conductor switching elements |
Country Status (7)
Country | Link |
---|---|
AT (1) | AT266264B (en) |
BE (1) | BE688955A (en) |
CH (1) | CH454297A (en) |
DE (1) | DE1261252C2 (en) |
FR (1) | FR1498954A (en) |
GB (1) | GB1147355A (en) |
NL (1) | NL6615217A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7515454B2 (en) | 2006-08-02 | 2009-04-07 | Infineon Technologies Ag | CBRAM cell and CBRAM array, and method of operating thereof |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3203803B2 (en) * | 1992-09-01 | 2001-08-27 | 株式会社デンソー | Thermistor type temperature sensor |
DE102005001253A1 (en) * | 2005-01-11 | 2006-07-20 | Infineon Technologies Ag | Memory cell arrangement for solid electrolyte memory cells has lower electrode and upper electrode and activated solid electrolyte material area between them as memory material area and whole of material area is coherently designed |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2816228A (en) * | 1953-05-21 | 1957-12-10 | Rca Corp | Semiconductor phase shift oscillator and device |
US2968014A (en) * | 1959-04-01 | 1961-01-10 | Kentucky Res Foundation | Synthetic stibnite crystal and method for producing the same |
BE622534A (en) * | 1961-09-19 |
-
1965
- 1965-11-10 DE DE1965D0048616 patent/DE1261252C2/en not_active Expired
-
1966
- 1966-10-19 AT AT975566A patent/AT266264B/en active
- 1966-10-21 CH CH1541566A patent/CH454297A/en unknown
- 1966-10-27 GB GB48188/66A patent/GB1147355A/en not_active Expired
- 1966-10-27 BE BE688955D patent/BE688955A/xx unknown
- 1966-10-27 NL NL6615217A patent/NL6615217A/xx unknown
- 1966-11-09 FR FR83092A patent/FR1498954A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7515454B2 (en) | 2006-08-02 | 2009-04-07 | Infineon Technologies Ag | CBRAM cell and CBRAM array, and method of operating thereof |
Also Published As
Publication number | Publication date |
---|---|
FR1498954A (en) | 1967-10-20 |
BE688955A (en) | 1967-03-31 |
CH454297A (en) | 1968-04-15 |
DE1261252C2 (en) | 1974-01-03 |
AT266264B (en) | 1968-11-11 |
NL6615217A (en) | 1967-05-11 |
DE1261252B (en) | 1968-02-15 |
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