CH454297A - Electronic, bistable semiconductor switching element and method for its production - Google Patents

Electronic, bistable semiconductor switching element and method for its production

Info

Publication number
CH454297A
CH454297A CH1541566A CH1541566A CH454297A CH 454297 A CH454297 A CH 454297A CH 1541566 A CH1541566 A CH 1541566A CH 1541566 A CH1541566 A CH 1541566A CH 454297 A CH454297 A CH 454297A
Authority
CH
Switzerland
Prior art keywords
electronic
production
switching element
semiconductor switching
bistable semiconductor
Prior art date
Application number
CH1541566A
Other languages
German (de)
Inventor
Knud Kristensen Ib
Original Assignee
Danfoss As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Danfoss As filed Critical Danfoss As
Publication of CH454297A publication Critical patent/CH454297A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Thermistors And Varistors (AREA)
CH1541566A 1965-11-10 1966-10-21 Electronic, bistable semiconductor switching element and method for its production CH454297A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1965D0048616 DE1261252C2 (en) 1965-11-10 1965-11-10 Electronic, bistable, barrier-free semiconductor switching element and method for its production

Publications (1)

Publication Number Publication Date
CH454297A true CH454297A (en) 1968-04-15

Family

ID=7051308

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1541566A CH454297A (en) 1965-11-10 1966-10-21 Electronic, bistable semiconductor switching element and method for its production

Country Status (7)

Country Link
AT (1) AT266264B (en)
BE (1) BE688955A (en)
CH (1) CH454297A (en)
DE (1) DE1261252C2 (en)
FR (1) FR1498954A (en)
GB (1) GB1147355A (en)
NL (1) NL6615217A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3203803B2 (en) * 1992-09-01 2001-08-27 株式会社デンソー Thermistor type temperature sensor
DE102005001253A1 (en) * 2005-01-11 2006-07-20 Infineon Technologies Ag Memory cell arrangement for solid electrolyte memory cells has lower electrode and upper electrode and activated solid electrolyte material area between them as memory material area and whole of material area is coherently designed
US7515454B2 (en) 2006-08-02 2009-04-07 Infineon Technologies Ag CBRAM cell and CBRAM array, and method of operating thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2816228A (en) * 1953-05-21 1957-12-10 Rca Corp Semiconductor phase shift oscillator and device
US2968014A (en) * 1959-04-01 1961-01-10 Kentucky Res Foundation Synthetic stibnite crystal and method for producing the same
NL283345A (en) * 1961-09-19

Also Published As

Publication number Publication date
AT266264B (en) 1968-11-11
DE1261252C2 (en) 1974-01-03
BE688955A (en) 1967-03-31
NL6615217A (en) 1967-05-11
DE1261252B (en) 1968-02-15
GB1147355A (en) 1969-04-02
FR1498954A (en) 1967-10-20

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