AT266264B - Voltage-dependent semimetal film resistor with negative voltage characteristics - Google Patents
Voltage-dependent semimetal film resistor with negative voltage characteristicsInfo
- Publication number
- AT266264B AT266264B AT975566A AT975566A AT266264B AT 266264 B AT266264 B AT 266264B AT 975566 A AT975566 A AT 975566A AT 975566 A AT975566 A AT 975566A AT 266264 B AT266264 B AT 266264B
- Authority
- AT
- Austria
- Prior art keywords
- dependent
- voltage
- film resistor
- semimetal film
- negative voltage
- Prior art date
Links
- 230000001419 dependent effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of switching materials after formation, e.g. doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Thermistors And Varistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1965D0048616 DE1261252C2 (en) | 1965-11-10 | 1965-11-10 | Electronic, bistable, barrier-free semiconductor switching element and method for its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT266264B true AT266264B (en) | 1968-11-11 |
Family
ID=7051308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT975566A AT266264B (en) | 1965-11-10 | 1966-10-19 | Voltage-dependent semimetal film resistor with negative voltage characteristics |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT266264B (en) |
| BE (1) | BE688955A (en) |
| CH (1) | CH454297A (en) |
| DE (1) | DE1261252C2 (en) |
| FR (1) | FR1498954A (en) |
| GB (1) | GB1147355A (en) |
| NL (1) | NL6615217A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5410291A (en) * | 1992-09-01 | 1995-04-25 | Nippondenso Co., Ltd. | Thermistor type temperature sensor |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005001253A1 (en) * | 2005-01-11 | 2006-07-20 | Infineon Technologies Ag | Memory cell arrangement for solid electrolyte memory cells has lower electrode and upper electrode and activated solid electrolyte material area between them as memory material area and whole of material area is coherently designed |
| US7515454B2 (en) * | 2006-08-02 | 2009-04-07 | Infineon Technologies Ag | CBRAM cell and CBRAM array, and method of operating thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2816228A (en) * | 1953-05-21 | 1957-12-10 | Rca Corp | Semiconductor phase shift oscillator and device |
| US2968014A (en) * | 1959-04-01 | 1961-01-10 | Kentucky Res Foundation | Synthetic stibnite crystal and method for producing the same |
| BE622534A (en) * | 1961-09-19 |
-
1965
- 1965-11-10 DE DE1965D0048616 patent/DE1261252C2/en not_active Expired
-
1966
- 1966-10-19 AT AT975566A patent/AT266264B/en active
- 1966-10-21 CH CH1541566A patent/CH454297A/en unknown
- 1966-10-27 BE BE688955D patent/BE688955A/xx unknown
- 1966-10-27 NL NL6615217A patent/NL6615217A/xx unknown
- 1966-10-27 GB GB48188/66A patent/GB1147355A/en not_active Expired
- 1966-11-09 FR FR83092A patent/FR1498954A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5410291A (en) * | 1992-09-01 | 1995-04-25 | Nippondenso Co., Ltd. | Thermistor type temperature sensor |
| US5610571A (en) * | 1992-09-01 | 1997-03-11 | Nippondenso Co., Ltd. | Thermistor type temperature sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1261252B (en) | 1968-02-15 |
| BE688955A (en) | 1967-03-31 |
| CH454297A (en) | 1968-04-15 |
| GB1147355A (en) | 1969-04-02 |
| DE1261252C2 (en) | 1974-01-03 |
| FR1498954A (en) | 1967-10-20 |
| NL6615217A (en) | 1967-05-11 |
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