NL6615217A - - Google Patents

Info

Publication number
NL6615217A
NL6615217A NL6615217A NL6615217A NL6615217A NL 6615217 A NL6615217 A NL 6615217A NL 6615217 A NL6615217 A NL 6615217A NL 6615217 A NL6615217 A NL 6615217A NL 6615217 A NL6615217 A NL 6615217A
Authority
NL
Netherlands
Application number
NL6615217A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6615217A publication Critical patent/NL6615217A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B63/00Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011Manufacture or treatment of multistable switching devices
    • H10N70/021Formation of switching materials, e.g. deposition of layers
    • H10N70/026Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011Manufacture or treatment of multistable switching devices
    • H10N70/041Modification of switching materials after formation, e.g. doping
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/821Device geometry
    • H10N70/826Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/882Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822Sulfides, e.g. CuS
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/882Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825Selenides, e.g. GeSe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Thermistors And Varistors (AREA)
NL6615217A 1965-11-10 1966-10-27 NL6615217A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1965D0048616 DE1261252C2 (de) 1965-11-10 1965-11-10 Elektronisches, bistabiles sperrschichtfreies Halbleiterschaltelement und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
NL6615217A true NL6615217A (xx) 1967-05-11

Family

ID=7051308

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6615217A NL6615217A (xx) 1965-11-10 1966-10-27

Country Status (7)

Country Link
AT (1) AT266264B (xx)
BE (1) BE688955A (xx)
CH (1) CH454297A (xx)
DE (1) DE1261252C2 (xx)
FR (1) FR1498954A (xx)
GB (1) GB1147355A (xx)
NL (1) NL6615217A (xx)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3203803B2 (ja) * 1992-09-01 2001-08-27 株式会社デンソー サーミスタ式温度センサ
DE102005001253A1 (de) * 2005-01-11 2006-07-20 Infineon Technologies Ag Speicherzellenanordnung, Verfahren zu deren Herstellung und Halbleiterspeichereinrichtung
US7515454B2 (en) * 2006-08-02 2009-04-07 Infineon Technologies Ag CBRAM cell and CBRAM array, and method of operating thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2816228A (en) * 1953-05-21 1957-12-10 Rca Corp Semiconductor phase shift oscillator and device
US2968014A (en) * 1959-04-01 1961-01-10 Kentucky Res Foundation Synthetic stibnite crystal and method for producing the same
BE622534A (xx) * 1961-09-19

Also Published As

Publication number Publication date
DE1261252B (de) 1968-02-15
GB1147355A (en) 1969-04-02
AT266264B (de) 1968-11-11
DE1261252C2 (de) 1974-01-03
FR1498954A (fr) 1967-10-20
BE688955A (xx) 1967-03-31
CH454297A (de) 1968-04-15

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