FR1498954A - élément de circuit électronique semi-conducteur bistable et procédé pour sa fabrication - Google Patents
élément de circuit électronique semi-conducteur bistable et procédé pour sa fabricationInfo
- Publication number
- FR1498954A FR1498954A FR83092A FR83092A FR1498954A FR 1498954 A FR1498954 A FR 1498954A FR 83092 A FR83092 A FR 83092A FR 83092 A FR83092 A FR 83092A FR 1498954 A FR1498954 A FR 1498954A
- Authority
- FR
- France
- Prior art keywords
- manufacture
- electronic circuit
- circuit element
- semiconductor electronic
- bistable semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of switching materials after formation, e.g. doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Thermistors And Varistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1965D0048616 DE1261252C2 (de) | 1965-11-10 | 1965-11-10 | Elektronisches, bistabiles sperrschichtfreies Halbleiterschaltelement und Verfahren zu seiner Herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1498954A true FR1498954A (fr) | 1967-10-20 |
Family
ID=7051308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR83092A Expired FR1498954A (fr) | 1965-11-10 | 1966-11-09 | élément de circuit électronique semi-conducteur bistable et procédé pour sa fabrication |
Country Status (7)
Country | Link |
---|---|
AT (1) | AT266264B (fr) |
BE (1) | BE688955A (fr) |
CH (1) | CH454297A (fr) |
DE (1) | DE1261252C2 (fr) |
FR (1) | FR1498954A (fr) |
GB (1) | GB1147355A (fr) |
NL (1) | NL6615217A (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3203803B2 (ja) * | 1992-09-01 | 2001-08-27 | 株式会社デンソー | サーミスタ式温度センサ |
DE102005001253A1 (de) * | 2005-01-11 | 2006-07-20 | Infineon Technologies Ag | Speicherzellenanordnung, Verfahren zu deren Herstellung und Halbleiterspeichereinrichtung |
US7515454B2 (en) | 2006-08-02 | 2009-04-07 | Infineon Technologies Ag | CBRAM cell and CBRAM array, and method of operating thereof |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2816228A (en) * | 1953-05-21 | 1957-12-10 | Rca Corp | Semiconductor phase shift oscillator and device |
US2968014A (en) * | 1959-04-01 | 1961-01-10 | Kentucky Res Foundation | Synthetic stibnite crystal and method for producing the same |
NL283345A (fr) * | 1961-09-19 |
-
1965
- 1965-11-10 DE DE1965D0048616 patent/DE1261252C2/de not_active Expired
-
1966
- 1966-10-19 AT AT975566A patent/AT266264B/de active
- 1966-10-21 CH CH1541566A patent/CH454297A/de unknown
- 1966-10-27 NL NL6615217A patent/NL6615217A/xx unknown
- 1966-10-27 GB GB48188/66A patent/GB1147355A/en not_active Expired
- 1966-10-27 BE BE688955D patent/BE688955A/xx unknown
- 1966-11-09 FR FR83092A patent/FR1498954A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
AT266264B (de) | 1968-11-11 |
DE1261252C2 (de) | 1974-01-03 |
BE688955A (fr) | 1967-03-31 |
CH454297A (de) | 1968-04-15 |
NL6615217A (fr) | 1967-05-11 |
DE1261252B (de) | 1968-02-15 |
GB1147355A (en) | 1969-04-02 |
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