GB1024622A - Two-terminal solid state devices having a current-controlled negative-resistance characteristic - Google Patents
Two-terminal solid state devices having a current-controlled negative-resistance characteristicInfo
- Publication number
- GB1024622A GB1024622A GB32494/62A GB3249462A GB1024622A GB 1024622 A GB1024622 A GB 1024622A GB 32494/62 A GB32494/62 A GB 32494/62A GB 3249462 A GB3249462 A GB 3249462A GB 1024622 A GB1024622 A GB 1024622A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrode
- region
- anode
- holes
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007787 solid Substances 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 abstract 5
- 239000002184 metal Substances 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 abstract 4
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- 230000001172 regenerating effect Effects 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 238000005381 potential energy Methods 0.000 abstract 1
- 230000001737 promoting effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Photovoltaic Devices (AREA)
Abstract
1,024,622. Semi-conductor devices. RADIO CORPORATION OF AMERICA. Sept. 19, 1962 [Sept. 19, 1961], No. 32494/62. Heading H1K. A two-terminal negative resistance device comprises a semi-conductor body with an intrinsic or near intrinsic region (e.g. resistivity greater than 1 ohm/cm.) with electrodes bonded to each of two major surfaces, the work function of the body adjacent the electrodes being higher and lower respectively, than that of the adjacent electrode; a P or N-type region may be provided between an electrode and the intrinsic region. The semi-conductor material may consist of germanium, silicon, IIIa, Vb such as gallium arsenide, or IIa, VIb such as cadmium sulphide. Fig. 1 shows a body 21 of 10 ohm/cm, intrinsic germanium with a thin 100 N+ region 23 having about 10<SP>19</SP> atoms per c.c. of arsenic impurity, through which tunnelling may occur. A first metal electrode 25 (the anode) formed of gold, platinum, or other low electromotive series metal, is bonded to layer 23 and a second " cathode " electrode 27 of tin or other metal is bonded to the other face of body 21. The voltage-current characteristic comprises a current controlled negative resistance portion as shown in Fig. 2. If electrode 25 is biased positively, holes are injected from electrode 25 and electrons from electrode 27; when the electrons arrive at the tunnel junction they tend to counter the space charge effect of the injected holes thus promoting further injection and providing a regenerative effect which gives rise to the negative resistance portion. This continues until the current reaches a level at which the potential energy maximum for electrons near the cathode (the virtual cathode) or for holes near the anode disappears so that positive resistance is resumed. It is stated that by varying the concentration of impurities in the N+ barrier region, the shape of the curve may be varied. A second embodiment (Fig. 8, not shown) is similar to Fig. 1 except that there is no N+ region. The anode electrode is of a metal such that the Fermi level lies. a little above the top of the valence band of the semi-conductor body while the cathode is of a metal such that the Fermi level lies below the conduction band and closer thereto than is the anode to the valence band. This gives an energy diagram as shown in Fig. 9a. When a voltage is applied the electric field in the region adjacent the anode is increased by the flow of holes from the anode which leads to further injection of holes and thus regenerative action and a negative resistance region.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13926761A | 1961-09-19 | 1961-09-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1024622A true GB1024622A (en) | 1966-03-30 |
Family
ID=22485850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB32494/62A Expired GB1024622A (en) | 1961-09-19 | 1962-09-19 | Two-terminal solid state devices having a current-controlled negative-resistance characteristic |
Country Status (3)
| Country | Link |
|---|---|
| BE (1) | BE622534A (en) |
| GB (1) | GB1024622A (en) |
| NL (1) | NL283345A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1253837B (en) * | 1966-07-13 | 1967-11-09 | Siemens Ag | Voltage controlled switch |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3370208A (en) * | 1964-03-25 | 1968-02-20 | Nippon Telegraph & Telephone | Thin film negative resistance semiconductor device |
| DE1261253B (en) * | 1965-11-10 | 1968-02-15 | Danfoss As | Electronic, bistable semiconductor switching element without a barrier layer |
| DE1261252C2 (en) * | 1965-11-10 | 1974-01-03 | Danfoss As | Electronic, bistable, barrier-free semiconductor switching element and method for its production |
-
0
- NL NL283345D patent/NL283345A/xx unknown
- BE BE622534D patent/BE622534A/xx unknown
-
1962
- 1962-09-19 GB GB32494/62A patent/GB1024622A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1253837B (en) * | 1966-07-13 | 1967-11-09 | Siemens Ag | Voltage controlled switch |
Also Published As
| Publication number | Publication date |
|---|---|
| BE622534A (en) | |
| NL283345A (en) |
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