ES8402118A1 - Un dispositivo semiconductor para emitir un flujo de electrones. - Google Patents

Un dispositivo semiconductor para emitir un flujo de electrones.

Info

Publication number
ES8402118A1
ES8402118A1 ES517118A ES517118A ES8402118A1 ES 8402118 A1 ES8402118 A1 ES 8402118A1 ES 517118 A ES517118 A ES 517118A ES 517118 A ES517118 A ES 517118A ES 8402118 A1 ES8402118 A1 ES 8402118A1
Authority
ES
Spain
Prior art keywords
region
type
electron
barrier
surface area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES517118A
Other languages
English (en)
Other versions
ES517118A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES517118A0 publication Critical patent/ES517118A0/es
Publication of ES8402118A1 publication Critical patent/ES8402118A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Electron Beam Exposure (AREA)

Abstract

DISPOSITIVO SEMICONDUCTOR PARA EMITIR UN FLUJO DE ELECTRONES.CONSISTE EN QUE EL CUERPO SEMICONDUCTOR COMPRENDE UNA REGION DE SUPERFICIE DE TIPO N QUE SE ENCUENTRA JUNTO AL AREA DE SUPERFICIE DESDE LA CUAL SE EMITEN LOS ELECTRONES CALIENTES, QUE SIRVEN PARA FORMAR ENTRE LA PRIMERA REGION DE TIPO N Y DICHA AREA DE SUPERFICIE UNA CRESTA DE POTENCIAL QUE ESTA SEPARADA DE DICHA AREA DE SUPERFICIE DE MANERA QUE SE PRODUZCA EN EL CUERPO SEMICONDUCTOR UN CAMPO DE DERIVACION QUE ACELERE LOS ELECTRONES HACIA DICHA AREA DE SUPERFICIE. COMPRENDE UN CUERPOSEMICONDUCTOR (10) DE SILICIO MONOCRISTALINO QUE TIENE UN REGION (3) DE TIPO N, SEPARADA DE LA REGION (2) DEL CUERPO (10) POR UNA BARRERA (1) QUE INCLUYE DOS UNIONES P-N SITUADAS ENTRE LA REGION (1) DE TIPO P Y LA PRIMERA Y SEGUNDA REGIONES (3) Y (2) RESPECTIVAMENTE, DOS CONEXIONES DE ELECTRODOS (12 Y 13) SIRVEN PARA CREAR UN SUMINISTRO DE ELECTRONES (24) CALIENTES QUE SON INYECTADOS DESDE LA REGION (2) A TRAVES DE LA BARRERA (1) EN LA REGION (3), Y EMITIDAS DESDE UN AREA (4) DEL CUERPO (10).
ES517118A 1981-11-06 1982-11-04 Un dispositivo semiconductor para emitir un flujo de electrones. Expired ES8402118A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08133502A GB2109160B (en) 1981-11-06 1981-11-06 Semiconductor electron source for display tubes and other equipment

Publications (2)

Publication Number Publication Date
ES517118A0 ES517118A0 (es) 1984-01-01
ES8402118A1 true ES8402118A1 (es) 1984-01-01

Family

ID=10525680

Family Applications (1)

Application Number Title Priority Date Filing Date
ES517118A Expired ES8402118A1 (es) 1981-11-06 1982-11-04 Un dispositivo semiconductor para emitir un flujo de electrones.

Country Status (10)

Country Link
US (1) US4506284A (es)
JP (1) JPS5887733A (es)
CA (1) CA1201818A (es)
DE (1) DE3240441A1 (es)
ES (1) ES8402118A1 (es)
FR (1) FR2516307B1 (es)
GB (1) GB2109160B (es)
HK (1) HK19386A (es)
IT (1) IT1153005B (es)
NL (1) NL8204240A (es)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8403537A (nl) * 1984-11-21 1986-06-16 Philips Nv Kathodestraalbuis met ionenval.
DE3538175C2 (de) * 1984-11-21 1996-06-05 Philips Electronics Nv Halbleiteranordnung zum Erzeugen eines Elektronenstromes und ihre Verwendung
NL8600675A (nl) * 1986-03-17 1987-10-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom.
DE3751781T2 (de) * 1986-08-12 1996-10-17 Canon Kk Festkörper-Elektronenstrahlerzeuger
JP2612572B2 (ja) * 1987-04-14 1997-05-21 キヤノン株式会社 電子放出素子
JPH0536369A (ja) * 1990-09-25 1993-02-12 Canon Inc 電子ビーム装置及びその駆動方法
JPH0512988A (ja) * 1990-10-13 1993-01-22 Canon Inc 半導体電子放出素子
US5359257A (en) * 1990-12-03 1994-10-25 Bunch Kyle J Ballistic electron, solid state cathode
US5266530A (en) * 1991-11-08 1993-11-30 Bell Communications Research, Inc. Self-aligned gated electron field emitter
US5670788A (en) * 1992-01-22 1997-09-23 Massachusetts Institute Of Technology Diamond cold cathode
US5463275A (en) * 1992-07-10 1995-10-31 Trw Inc. Heterojunction step doped barrier cathode emitter
EP0597537B1 (en) * 1992-11-12 1998-02-11 Koninklijke Philips Electronics N.V. Electron tube comprising a semiconductor cathode
US5686789A (en) 1995-03-14 1997-11-11 Osram Sylvania Inc. Discharge device having cathode with micro hollow array
TW373210B (en) * 1997-02-24 1999-11-01 Koninkl Philips Electronics Nv Electron tube having a semiconductor cathode
EP1086480B1 (en) * 1998-06-11 2003-09-03 Petr Viscor Planar electron emitter (pee)
US6351254B2 (en) * 1998-07-06 2002-02-26 The Regents Of The University Of California Junction-based field emission structure for field emission display
US6566692B2 (en) * 2000-08-11 2003-05-20 Matsushita Electric Industrial Co., Ltd. Electron device and junction transistor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL107624C (es) * 1955-09-01
US3422322A (en) * 1965-08-25 1969-01-14 Texas Instruments Inc Drift transistor
DE2345679A1 (de) * 1972-09-22 1974-04-04 Philips Nv Halbleiterkaltkathode
US4015284A (en) * 1974-03-27 1977-03-29 Hamamatsu Terebi Kabushiki Kaisha Semiconductor photoelectron emission device
US4000503A (en) * 1976-01-02 1976-12-28 International Audio Visual, Inc. Cold cathode for infrared image tube
NL184549C (nl) * 1978-01-27 1989-08-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.
NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
US4352117A (en) * 1980-06-02 1982-09-28 International Business Machines Corporation Electron source

Also Published As

Publication number Publication date
NL8204240A (nl) 1983-06-01
GB2109160B (en) 1985-05-30
GB2109160A (en) 1983-05-25
FR2516307B1 (fr) 1986-12-12
CA1201818A (en) 1986-03-11
HK19386A (en) 1986-03-27
DE3240441A1 (de) 1983-05-19
JPH0341931B2 (es) 1991-06-25
US4506284A (en) 1985-03-19
ES517118A0 (es) 1984-01-01
JPS5887733A (ja) 1983-05-25
FR2516307A1 (fr) 1983-05-13
IT8224056A0 (it) 1982-11-03
IT1153005B (it) 1987-01-14

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19981201