GB1444544A - Semiconductor photocathode - Google Patents

Semiconductor photocathode

Info

Publication number
GB1444544A
GB1444544A GB3852773A GB3852773A GB1444544A GB 1444544 A GB1444544 A GB 1444544A GB 3852773 A GB3852773 A GB 3852773A GB 3852773 A GB3852773 A GB 3852773A GB 1444544 A GB1444544 A GB 1444544A
Authority
GB
United Kingdom
Prior art keywords
layer
regions
contacts
region
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3852773A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Components Ltd
Original Assignee
Mullard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mullard Ltd filed Critical Mullard Ltd
Priority to GB3852773A priority Critical patent/GB1444544A/en
Priority claimed from GB4395672A external-priority patent/GB1444541A/en
Publication of GB1444544A publication Critical patent/GB1444544A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/1124—Devices with PN homojunction gate
    • H01L31/1126—Devices with PN homojunction gate the device being a field-effect phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)

Abstract

1444544 Photocathodes MULLARD Ltd 16 Aug 1973 [22 Sept 1972 (3)] 43959/72 Heading H1D A semi-conductor photocathode comprises a field effect transistor structure; an injecting junction with P-type semi-conductor material in series with the source or drain of the transistor, a free surface of the P-type s.c. being not more than a diffusion length for electrons from the junction, the transistor having a gate for producing a depletion region in the channel of the structure situated so that incident e.m. radiation can generate charge carriers in the depletion region or within a diffusion length of the region. The cathode comprises a substrate 2; P- and N-type Si layers 1, 3; arrays of annular P<SP>+</SP> regions 4 and N<SP>+</SP> regions 5 formed by diffusion; insulating layers 6, 9; annular An or Al contacts 7, 12; and a thin P-type layer 10 with a coating of Cs-O to reduce the work function. Contacts 7, 12 are interconnected by conductors 8, 13 on layers 6, 11 respectively. A positive setting pulse is applied to contacts 7 to forward bias the junctions 4, 3 and charge the capacitors formed by the contacts layer 6 and regions 4. At the end of this pulse contacts 7 return to the potential of layer 3 carrying regions 4 negative, thus reverse biasing junctions 4, 3 and producing a depletion region below each which extends to layer 1. This cuts off the path between terminal 14 and region 5 and the structures act as F.E.T.s with a common source terminal 14, gates being regions 4 and drain electrodes being regions 5. Incident light which generates free charge carriers in layer 3 causes the depletion regions to contract in accordance with the local intensity. When a subsequent positive pulse is applied to electrode 12 relative to layer 3 a current whose magnitude is dependent on the radiation absorbed since the end of the setting pulse flows to regions 5, electrons are injected by P-N junction 5, 10 into layer 10 and are emitted therefrom. The conductors 8 may be coupled to gates 4 by rectifying junctions and contacts 7 form Schottky barriers with regions 4. In another embodiment comprising an array of JFET structures and N<SP>+</SP> grid region 27 is formed on the lower surface of the N-type layer 21 to provide a source for all JFET's. A Pt layer 28 provides a connection to the region 27 and forms a Shottky junction with the remainder of the layer 21. Contacts 7, 12 are replaced by annular contacts 31 within which the surface is coated with a Cs or Cs-O layer 33. Depletion regions are shown by dotted lines. Radiation may be incident on either side of the device. In a three terminal arrangement the N<SP>+</SP> grid is formed on the top surface of layer 21 and connected to layer 28. The P-type layer 29 is restricted to the areas bounded by electrodes 31 and these are surrounded by C-shaped eletrodes above regions 25 and connected to the third terminal. The devices are used on image converter and intensifier tubes. A single device is used to convert a modulated laser beam into a modulated electron beam. Specifications 1,444,541 and 1,444,542 are referred to.
GB3852773A 1972-09-22 1972-09-22 Semiconductor photocathode Expired GB1444544A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3852773A GB1444544A (en) 1972-09-22 1972-09-22 Semiconductor photocathode

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB4395672A GB1444541A (en) 1972-09-22 1972-09-22 Radiation sensitive solid state devices
GB3852973 1972-09-22
GB3852773A GB1444544A (en) 1972-09-22 1972-09-22 Semiconductor photocathode
GB4395972 1972-09-22

Publications (1)

Publication Number Publication Date
GB1444544A true GB1444544A (en) 1976-08-04

Family

ID=27448918

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3852773A Expired GB1444544A (en) 1972-09-22 1972-09-22 Semiconductor photocathode

Country Status (1)

Country Link
GB (1) GB1444544A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766340A (en) * 1984-02-01 1988-08-23 Mast Karel D V D Semiconductor device having a cold cathode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766340A (en) * 1984-02-01 1988-08-23 Mast Karel D V D Semiconductor device having a cold cathode

Similar Documents

Publication Publication Date Title
US3931633A (en) Electron tube including a photocathode
US3887936A (en) Radiation sensitive solid state devices
US3670213A (en) Semiconductor photosensitive device with a rare earth oxide compound forming a rectifying junction
US4683399A (en) Silicon vacuum electron devices
US3893153A (en) Light activated thyristor with high di/dt capability
JP2954034B2 (en) Single carrier type solid state radiation detector
US3987476A (en) Thyristor
US3492548A (en) Electroluminescent device and method of operating
US3894295A (en) Solid state image display and/or conversion device
US3649837A (en) Diffractive image-forming means integrated into semiconducting devices
US4868614A (en) Light emitting semiconductor device matrix with non-single-crystalline semiconductor
US3278814A (en) High-gain photon-coupled semiconductor device
JPS5895877A (en) Semiconductor photoelectric transducer device
US3891993A (en) Semiconductor arrangement for the detection of light beams or other suitable electro-magnetic radiation
GB1218451A (en) Improvements in or relating to light/electric translating arrangements
US3466512A (en) Impact avalanche transit time diodes with heterojunction structure
GB1110281A (en) Semiconductor junction device for generating optical radiation
GB1444544A (en) Semiconductor photocathode
US3668473A (en) Photosensitive semi-conductor device
US3329823A (en) Solid state thin film photosensitive device with tunnel barriers
US3705321A (en) Electron tube with bonded external semiconductor electrode
US4410903A (en) Heterojunction-diode transistor EBS amplifier
US3633077A (en) Semiconductor photoelectric converting device having spaced elements for decreasing surface recombination of minority carriers
US3904911A (en) Light-sensitive target for vidicon picture tube
US3364367A (en) Solid state electron multiplier including reverse-biased, dissimilar semiconductor layers

Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees