ES8402463A1 - Un dispositivo semiconductor para emitir electrones. - Google Patents

Un dispositivo semiconductor para emitir electrones.

Info

Publication number
ES8402463A1
ES8402463A1 ES517117A ES517117A ES8402463A1 ES 8402463 A1 ES8402463 A1 ES 8402463A1 ES 517117 A ES517117 A ES 517117A ES 517117 A ES517117 A ES 517117A ES 8402463 A1 ES8402463 A1 ES 8402463A1
Authority
ES
Spain
Prior art keywords
region
regions
type
electrons
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES517117A
Other languages
English (en)
Other versions
ES517117A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES517117A0 publication Critical patent/ES517117A0/es
Publication of ES8402463A1 publication Critical patent/ES8402463A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)

Abstract

DISPOSITIVO SEMICONDUCTOR PARA EMITIR ELECTRONES. CONSTA DE UN CUERPO SEMICONDUCTOR (10) DE SILICIO MONOCRISTALINO EN EL QUE SE HA FORMADO UNA ESTRUCTURA NPN CONSTITUIDA POR UNA PRIMERA REGION (1) DE TIPO P QUE ESTA SITUADA ENTRE UNAS REGIONES SEGUNDA Y TERCERA (2, 3) DE TIPO N, GENERANDOSE EN DICHA ESTRUCTURA NPN ELECTRONES QUE SE OMITEN AL ESPACIO LIBRE (20) DESDE UN AREA SUPERFICIAL (4) DEL CUERPO (10), DESPUES DE FLUIR DE LA SEGUNDA REGION (2) ATRAVESANDO LAS REGIONES PRIMERA Y TERCERA (1, 3); DE UNAS CONEXIONES DE ELECTRODO PERTENECIENTES A LA ESTRUCTURA NPN, LAS CUALES VAN SOLAMENTE A LAS REGIONES SEGUNDA Y TERCERA (2, 3); Y DE UNA REGION DE BARRERA QUE RESTRINGE EL PASO DE ELECTRONES (24) DESDE LA REGION SEGUNDA A LA TERCERA, MIENTRAS NO SE APLIQUE UNA DIFERENCIA DE POTENCIAL ENTRE LAS CONEXIONES DE ELECTRODO, QUE POLARICEN POSITIVAMENTE LA REGION TERCERA CON RESPECTO A LA SEGUNDA.
ES517117A 1981-11-06 1982-11-04 Un dispositivo semiconductor para emitir electrones. Expired ES8402463A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08133501A GB2109159B (en) 1981-11-06 1981-11-06 Semiconductor electron source for display tubes and other equipment

Publications (2)

Publication Number Publication Date
ES517117A0 ES517117A0 (es) 1984-01-16
ES8402463A1 true ES8402463A1 (es) 1984-01-16

Family

ID=10525679

Family Applications (1)

Application Number Title Priority Date Filing Date
ES517117A Expired ES8402463A1 (es) 1981-11-06 1982-11-04 Un dispositivo semiconductor para emitir electrones.

Country Status (10)

Country Link
US (1) US4516146A (es)
JP (1) JPS5887732A (es)
CA (1) CA1193755A (es)
DE (1) DE3240481A1 (es)
ES (1) ES8402463A1 (es)
FR (1) FR2516306B1 (es)
GB (1) GB2109159B (es)
HK (1) HK19286A (es)
IT (1) IT1153006B (es)
NL (1) NL8204239A (es)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3330026A1 (de) * 1983-08-19 1985-02-28 Siemens AG, 1000 Berlin und 8000 München Integrierte rs-flipflop-schaltung
DE3330013A1 (de) * 1983-08-19 1985-02-28 Siemens AG, 1000 Berlin und 8000 München Statische speicherzelle
GB8333130D0 (en) * 1983-12-12 1984-01-18 Gen Electric Co Plc Semiconductor devices
NL8403537A (nl) * 1984-11-21 1986-06-16 Philips Nv Kathodestraalbuis met ionenval.
DE3538175C2 (de) * 1984-11-21 1996-06-05 Philips Electronics Nv Halbleiteranordnung zum Erzeugen eines Elektronenstromes und ihre Verwendung
NL8500413A (nl) * 1985-02-14 1986-09-01 Philips Nv Electronenbundelapparaat met een halfgeleider electronenemitter.
NL8600675A (nl) * 1986-03-17 1987-10-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom.
JPH0536369A (ja) * 1990-09-25 1993-02-12 Canon Inc 電子ビーム装置及びその駆動方法
JPH0512988A (ja) * 1990-10-13 1993-01-22 Canon Inc 半導体電子放出素子
US5404081A (en) * 1993-01-22 1995-04-04 Motorola, Inc. Field emission device with switch and current source in the emitter circuit
GB9616265D0 (en) * 1996-08-02 1996-09-11 Philips Electronics Uk Ltd Electron devices
TW373210B (en) * 1997-02-24 1999-11-01 Koninkl Philips Electronics Nv Electron tube having a semiconductor cathode
US6911768B2 (en) 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6781146B2 (en) * 2001-04-30 2004-08-24 Hewlett-Packard Development Company, L.P. Annealed tunneling emitter
US6882100B2 (en) * 2001-04-30 2005-04-19 Hewlett-Packard Development Company, L.P. Dielectric light device
US6753544B2 (en) * 2001-04-30 2004-06-22 Hewlett-Packard Development Company, L.P. Silicon-based dielectric tunneling emitter
US6847045B2 (en) * 2001-10-12 2005-01-25 Hewlett-Packard Development Company, L.P. High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission
US6558968B1 (en) 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL107624C (es) * 1955-09-01
US3119947A (en) * 1961-02-20 1964-01-28 Clevite Corp Semiconductive electron emissive device
CA927468A (en) * 1968-08-12 1973-05-29 E. Simon Ralph Negative effective electron affinity emitters with drift fields using deep acceptor doping
DE2345679A1 (de) * 1972-09-22 1974-04-04 Philips Nv Halbleiterkaltkathode
US4015284A (en) * 1974-03-27 1977-03-29 Hamamatsu Terebi Kabushiki Kaisha Semiconductor photoelectron emission device
US4000503A (en) * 1976-01-02 1976-12-28 International Audio Visual, Inc. Cold cathode for infrared image tube
NL184549C (nl) * 1978-01-27 1989-08-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.
NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
US4352117A (en) * 1980-06-02 1982-09-28 International Business Machines Corporation Electron source

Also Published As

Publication number Publication date
JPH0326494B2 (es) 1991-04-11
NL8204239A (nl) 1983-06-01
GB2109159A (en) 1983-05-25
GB2109159B (en) 1985-05-30
IT1153006B (it) 1987-01-14
FR2516306B1 (fr) 1985-10-31
HK19286A (en) 1986-03-27
IT8224057A0 (it) 1982-11-03
ES517117A0 (es) 1984-01-16
CA1193755A (en) 1985-09-17
JPS5887732A (ja) 1983-05-25
DE3240481A1 (de) 1983-05-19
FR2516306A1 (fr) 1983-05-13
US4516146A (en) 1985-05-07

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19981201