IT8224057A0 - Dispositivo semiconduttore perl'emissione di elettroni e apparecchiatura comprendente tale dispositivo semiconduttore. - Google Patents

Dispositivo semiconduttore perl'emissione di elettroni e apparecchiatura comprendente tale dispositivo semiconduttore.

Info

Publication number
IT8224057A0
IT8224057A0 IT8224057A IT2405782A IT8224057A0 IT 8224057 A0 IT8224057 A0 IT 8224057A0 IT 8224057 A IT8224057 A IT 8224057A IT 2405782 A IT2405782 A IT 2405782A IT 8224057 A0 IT8224057 A0 IT 8224057A0
Authority
IT
Italy
Prior art keywords
semiconductor
electron emission
equipment including
emission device
semiconductor device
Prior art date
Application number
IT8224057A
Other languages
English (en)
Other versions
IT1153006B (it
IT8224057A1 (it
Inventor
John Martin Shannon
Arthur Marie Eugen Hoeberechts
Gerardus Gegorius Petru Gorkom
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IT8224057A0 publication Critical patent/IT8224057A0/it
Publication of IT8224057A1 publication Critical patent/IT8224057A1/it
Application granted granted Critical
Publication of IT1153006B publication Critical patent/IT1153006B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • H01J1/308Semiconductor cathodes, e.g. cathodes with PN junction layers
IT24057/82A 1981-11-06 1982-11-03 Dispositivo semiconduttore per l'emissione di elettroni e apparecchiatura comprendente tale dispositivo semiconduttore IT1153006B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08133501A GB2109159B (en) 1981-11-06 1981-11-06 Semiconductor electron source for display tubes and other equipment

Publications (3)

Publication Number Publication Date
IT8224057A0 true IT8224057A0 (it) 1982-11-03
IT8224057A1 IT8224057A1 (it) 1984-05-03
IT1153006B IT1153006B (it) 1987-01-14

Family

ID=10525679

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24057/82A IT1153006B (it) 1981-11-06 1982-11-03 Dispositivo semiconduttore per l'emissione di elettroni e apparecchiatura comprendente tale dispositivo semiconduttore

Country Status (10)

Country Link
US (1) US4516146A (it)
JP (1) JPS5887732A (it)
CA (1) CA1193755A (it)
DE (1) DE3240481A1 (it)
ES (1) ES517117A0 (it)
FR (1) FR2516306B1 (it)
GB (1) GB2109159B (it)
HK (1) HK19286A (it)
IT (1) IT1153006B (it)
NL (1) NL8204239A (it)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3330026A1 (de) * 1983-08-19 1985-02-28 Siemens AG, 1000 Berlin und 8000 München Integrierte rs-flipflop-schaltung
DE3330013A1 (de) * 1983-08-19 1985-02-28 Siemens AG, 1000 Berlin und 8000 München Statische speicherzelle
GB8333130D0 (en) * 1983-12-12 1984-01-18 Gen Electric Co Plc Semiconductor devices
DE3538175C2 (de) * 1984-11-21 1996-06-05 Philips Electronics Nv Halbleiteranordnung zum Erzeugen eines Elektronenstromes und ihre Verwendung
NL8403537A (nl) * 1984-11-21 1986-06-16 Philips Nv Kathodestraalbuis met ionenval.
NL8500413A (nl) * 1985-02-14 1986-09-01 Philips Nv Electronenbundelapparaat met een halfgeleider electronenemitter.
NL8600675A (nl) * 1986-03-17 1987-10-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom.
JPH0536369A (ja) * 1990-09-25 1993-02-12 Canon Inc 電子ビーム装置及びその駆動方法
JPH0512988A (ja) * 1990-10-13 1993-01-22 Canon Inc 半導体電子放出素子
US5404081A (en) * 1993-01-22 1995-04-04 Motorola, Inc. Field emission device with switch and current source in the emitter circuit
GB9616265D0 (en) * 1996-08-02 1996-09-11 Philips Electronics Uk Ltd Electron devices
TW373210B (en) * 1997-02-24 1999-11-01 Koninkl Philips Electronics Nv Electron tube having a semiconductor cathode
US6882100B2 (en) * 2001-04-30 2005-04-19 Hewlett-Packard Development Company, L.P. Dielectric light device
US6781146B2 (en) * 2001-04-30 2004-08-24 Hewlett-Packard Development Company, L.P. Annealed tunneling emitter
US6753544B2 (en) * 2001-04-30 2004-06-22 Hewlett-Packard Development Company, L.P. Silicon-based dielectric tunneling emitter
US6911768B2 (en) 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6847045B2 (en) * 2001-10-12 2005-01-25 Hewlett-Packard Development Company, L.P. High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission
US6558968B1 (en) 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE549199A (it) * 1955-09-01
US3119947A (en) * 1961-02-20 1964-01-28 Clevite Corp Semiconductive electron emissive device
CA927468A (en) * 1968-08-12 1973-05-29 Radio Corporation Of America Negative effective electron affinity emitters with drift fields using deep acceptor doping
DE2345679A1 (de) * 1972-09-22 1974-04-04 Philips Nv Halbleiterkaltkathode
US4015284A (en) * 1974-03-27 1977-03-29 Hamamatsu Terebi Kabushiki Kaisha Semiconductor photoelectron emission device
US4000503A (en) * 1976-01-02 1976-12-28 International Audio Visual, Inc. Cold cathode for infrared image tube
NL184549C (nl) * 1978-01-27 1989-08-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.
NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
US4352117A (en) * 1980-06-02 1982-09-28 International Business Machines Corporation Electron source

Also Published As

Publication number Publication date
FR2516306B1 (fr) 1985-10-31
JPH0326494B2 (it) 1991-04-11
HK19286A (en) 1986-03-27
US4516146A (en) 1985-05-07
IT1153006B (it) 1987-01-14
CA1193755A (en) 1985-09-17
ES8402463A1 (es) 1984-01-16
GB2109159A (en) 1983-05-25
GB2109159B (en) 1985-05-30
DE3240481A1 (de) 1983-05-19
JPS5887732A (ja) 1983-05-25
FR2516306A1 (fr) 1983-05-13
IT8224057A1 (it) 1984-05-03
NL8204239A (nl) 1983-06-01
ES517117A0 (es) 1984-01-16

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