JPS5513980A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS5513980A
JPS5513980A JP8757078A JP8757078A JPS5513980A JP S5513980 A JPS5513980 A JP S5513980A JP 8757078 A JP8757078 A JP 8757078A JP 8757078 A JP8757078 A JP 8757078A JP S5513980 A JPS5513980 A JP S5513980A
Authority
JP
Japan
Prior art keywords
area
electrode
microwave
narrowed
negative resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8757078A
Other languages
Japanese (ja)
Other versions
JPS6355226B2 (en
Inventor
Kaoru Okazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8757078A priority Critical patent/JPS5513980A/en
Publication of JPS5513980A publication Critical patent/JPS5513980A/en
Publication of JPS6355226B2 publication Critical patent/JPS6355226B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To effectively oscillate and amplify microwave by narrowing the section of semiconductor as the carrier progresses and by increasing the impurity density as the element section becomes narrowed.
CONSTITUTION: Semiconductor element is composed of the area 8, where the element section is narrowed as the carrier advances and the impurity density is increased as the element section is narrowed to uniformalize the direct current electric fiedl in the element, and of electrodes 8 and 9 of shot key junction or PN junction. First, when the area 8 is made to be n type semiconductor and positive voltage is impressed without causing avalanche breakdown at the junction part on the electrode 10 and with the result of punch-through condition, positive holes coming over the direction potential barrier cause negative resistance. Next, when the area 8 is made to be P type semiconductor and the positive voltage of the same condition is impressed on the electrode 9, electron is poured from the electrode 10 to cause negative resistance. Since negative resistance can thus be generated in the microwave area, microwave can effectively oscillated and amplified.
COPYRIGHT: (C)1980,JPO&Japio
JP8757078A 1978-07-17 1978-07-17 Semiconductor element Granted JPS5513980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8757078A JPS5513980A (en) 1978-07-17 1978-07-17 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8757078A JPS5513980A (en) 1978-07-17 1978-07-17 Semiconductor element

Publications (2)

Publication Number Publication Date
JPS5513980A true JPS5513980A (en) 1980-01-31
JPS6355226B2 JPS6355226B2 (en) 1988-11-01

Family

ID=13918649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8757078A Granted JPS5513980A (en) 1978-07-17 1978-07-17 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS5513980A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62193935A (en) * 1986-02-12 1987-08-26 川崎製鉄株式会社 Strip-coil bunlding band treater

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62193935A (en) * 1986-02-12 1987-08-26 川崎製鉄株式会社 Strip-coil bunlding band treater

Also Published As

Publication number Publication date
JPS6355226B2 (en) 1988-11-01

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