ES2627686T3 - Substrato transparente provisto de un electrodo - Google Patents

Substrato transparente provisto de un electrodo Download PDF

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Publication number
ES2627686T3
ES2627686T3 ES11170582.8T ES11170582T ES2627686T3 ES 2627686 T3 ES2627686 T3 ES 2627686T3 ES 11170582 T ES11170582 T ES 11170582T ES 2627686 T3 ES2627686 T3 ES 2627686T3
Authority
ES
Spain
Prior art keywords
layer
electrode
tin
molybdenum
si3n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES11170582.8T
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English (en)
Spanish (es)
Inventor
Nikolas Janke
Ulf Blieske
Renaud Fix
Thibaut Heitz
Véronique Rondeau
Bertrand Neander
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Original Assignee
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=8859441&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ES2627686(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Saint Gobain Glass France SAS, Compagnie de Saint Gobain SA filed Critical Saint Gobain Glass France SAS
Application granted granted Critical
Publication of ES2627686T3 publication Critical patent/ES2627686T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Non-Insulated Conductors (AREA)
  • Surface Treatment Of Glass (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
ES11170582.8T 2001-01-31 2002-01-23 Substrato transparente provisto de un electrodo Expired - Lifetime ES2627686T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0101292A FR2820241B1 (fr) 2001-01-31 2001-01-31 Substrat transparent muni d'une electrode
FR0101292 2001-01-31

Publications (1)

Publication Number Publication Date
ES2627686T3 true ES2627686T3 (es) 2017-07-31

Family

ID=8859441

Family Applications (1)

Application Number Title Priority Date Filing Date
ES11170582.8T Expired - Lifetime ES2627686T3 (es) 2001-01-31 2002-01-23 Substrato transparente provisto de un electrodo

Country Status (12)

Country Link
US (3) US8148631B2 (https=)
EP (5) EP2369636A3 (https=)
JP (3) JP4537000B2 (https=)
KR (1) KR100949600B1 (https=)
CN (1) CN1327533C (https=)
AU (1) AU2002233459A1 (https=)
BR (1) BR0206785A (https=)
ES (1) ES2627686T3 (https=)
FR (1) FR2820241B1 (https=)
MX (1) MXPA03006682A (https=)
PT (1) PT2369633T (https=)
WO (1) WO2002065554A1 (https=)

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CN1533610A (zh) 2004-09-29
MXPA03006682A (es) 2003-10-24
FR2820241A1 (fr) 2002-08-02
BR0206785A (pt) 2004-02-10
EP2369633A3 (fr) 2014-09-24
JP5592461B2 (ja) 2014-09-17
EP2369634A3 (fr) 2014-09-24
EP2369636A3 (fr) 2014-10-01
WO2002065554A8 (fr) 2004-05-06
EP1356528A1 (fr) 2003-10-29
KR100949600B1 (ko) 2010-03-25
JP4537000B2 (ja) 2010-09-01
US20120186646A1 (en) 2012-07-26
EP2369634A2 (fr) 2011-09-28
PT2369633T (pt) 2017-06-08
US20120167961A1 (en) 2012-07-05
EP2369635A2 (fr) 2011-09-28
JP2013048297A (ja) 2013-03-07
EP2369633B1 (fr) 2017-03-15
US8809668B2 (en) 2014-08-19
US8148631B2 (en) 2012-04-03
WO2002065554A1 (fr) 2002-08-22
KR20030085524A (ko) 2003-11-05
JP5313948B2 (ja) 2013-10-09
EP2369633A2 (fr) 2011-09-28
EP2369635A3 (fr) 2014-10-08
JP2004532501A (ja) 2004-10-21
JP2010212692A (ja) 2010-09-24
EP2369636A2 (fr) 2011-09-28
FR2820241B1 (fr) 2003-09-19
US20040144419A1 (en) 2004-07-29
AU2002233459A1 (en) 2002-08-28
EP2369635B1 (fr) 2017-06-14

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