JP4918247B2 - Cis系薄膜太陽電池モジュール及びその製造方法 - Google Patents
Cis系薄膜太陽電池モジュール及びその製造方法 Download PDFInfo
- Publication number
- JP4918247B2 JP4918247B2 JP2005316846A JP2005316846A JP4918247B2 JP 4918247 B2 JP4918247 B2 JP 4918247B2 JP 2005316846 A JP2005316846 A JP 2005316846A JP 2005316846 A JP2005316846 A JP 2005316846A JP 4918247 B2 JP4918247 B2 JP 4918247B2
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- cis
- film solar
- thin film
- cell module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 94
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title description 5
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 49
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 49
- 229920005989 resin Polymers 0.000 claims description 46
- 239000011347 resin Substances 0.000 claims description 46
- 239000010408 film Substances 0.000 claims description 43
- 239000011521 glass Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 22
- 239000006059 cover glass Substances 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 230000031700 light absorption Effects 0.000 claims description 7
- 239000003513 alkali Substances 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000006116 polymerization reaction Methods 0.000 claims description 5
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 27
- 238000003860 storage Methods 0.000 description 26
- 239000003990 capacitor Substances 0.000 description 19
- 230000007774 longterm Effects 0.000 description 8
- 238000009434 installation Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 239000005341 toughened glass Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000000088 plastic resin Substances 0.000 description 2
- 238000009849 vacuum degassing Methods 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- STXRKTWYNZKSGP-UHFFFAOYSA-N [Se].[In].[In] Chemical compound [Se].[In].[In] STXRKTWYNZKSGP-UHFFFAOYSA-N 0.000 description 1
- ZAKAOZUIEHSPGA-UHFFFAOYSA-N [Se].[Se].[Cu] Chemical compound [Se].[Se].[Cu] ZAKAOZUIEHSPGA-UHFFFAOYSA-N 0.000 description 1
- OJIJEKBXJYRIBZ-UHFFFAOYSA-N cadmium nickel Chemical compound [Ni].[Cd] OJIJEKBXJYRIBZ-UHFFFAOYSA-N 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910000652 nickel hydride Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/38—Energy storage means, e.g. batteries, structurally associated with PV modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E70/00—Other energy conversion or management systems reducing GHG emissions
- Y02E70/30—Systems combining energy storage with energy generation of non-fossil origin
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
前記CIS系薄膜太陽電池サーキット2上にガラス基板2Aと同サイズのEVA樹脂フィルム3を載せ、更に、四隅に短冊状に切ったEVA樹脂フィルム3A(図示省略)を載せ、その上にカバーガラス4を載せ、このCIS系薄膜太陽電池サーキット2とカバーガラス4の間に前記EVA樹脂フィルム3及び3Aが挟持された構造体STを真空加熱装置に入れ、真空脱気しつつ、80〜120℃まで加熱(ホットプレート)して前記EVA樹脂フィルムをガラス全面に溶融拡散させた後、徐々に大気に戻し加圧した後、140℃〜150℃の温度で加熱(ホットプレート)して前記EVA樹脂フィルム3及び3Aを架橋する。なお、前記四隅に短冊状に切ったEVA樹脂フィルム3Aを載せる理由は、ガラス基板2Aと同サイズのEVA樹脂フィルム3を載せるだけでは、加圧時に溶融したEVA樹脂が四隅からはみ出して端が薄くなりEVA樹脂層の厚みが一定にならないので、これを補充するたのものである。
2 CIS系薄膜太陽電池サーキット
2’ CIS系薄膜太陽電池デバイス部
2A ガラス基板
2B アルカリバリア層
2C 金属裏面電極層
2D 光吸収層
2E バッファ層
2F 窓層
3 EVA樹脂フィルム(又はシート)
3A 短冊状のEVA樹脂フィルム
4 カバーガラス
5 バックシート
6 ケーブル付き接続箱
7 シール材
8 フレーム
9 蓄電用キャパシタ
ST 構造体
Claims (2)
- ガラス基板上に、アルカリバリア層、金属裏面電極層、光吸収層、バッファ層、窓層の順に積層された複数のCIS系薄膜太陽電池デバイス部が導電パターンにより電気的に接続されたCIS系薄膜太陽電池サーキット(又はサブモジュール)に、加熱して重合反応を起こさせて架橋し、接着剤として作用するエチレンビニルアセテート(以下、EVAという。)樹脂フィルム(又はシート)を介して、白板半強化ガラス等からなるカバーガラスを貼着することを特徴とするCIS系薄膜太陽電池モジュールの製造方法であって、
前記CIS系薄膜太陽電池サーキット上にガラス基板と同サイズのフィルム状のEVA樹脂フィルム(又はシート)を載せ、EVA樹脂フィルムの四隅の厚みが、中央部(四隅以外の部分)よりも厚くなるように四隅に短冊状に切ったEVA樹脂フィルム(又はシート)を載せ、その上にカバーガラスを載せ、このCIS系薄膜太陽電池サーキットとカバーガラスの間に前記EVA樹脂フィルム(又はシート)が挟持された構造体を真空加熱装置に入れ、真空脱気しつつ、80〜120℃まで加熱(ホットプレート)して前記EVA樹脂フィルム(又はシート)をガラス全面に溶融拡散させた後、徐々に大気に戻し加圧し、140℃〜150℃の温度で加熱(ホットプレート)して前記EVA樹脂フィルム(又はシート)を架橋することを特徴とするCIS系薄膜太陽電池モジュールの製造方法。 - 前記EVA樹脂フィルム(又はシート)を架橋する際に発生するガス分を真空吸引して、泡等の発生を防止することを特徴とする請求項1に記載のCIS系薄膜太陽電池モジュールの製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005316846A JP4918247B2 (ja) | 2005-10-31 | 2005-10-31 | Cis系薄膜太陽電池モジュール及びその製造方法 |
KR1020087010613A KR101275651B1 (ko) | 2005-10-31 | 2006-10-31 | Cis계 박막 태양 전지 모듈 및 이의 제조방법 |
TW095140220A TW200729529A (en) | 2005-10-31 | 2006-10-31 | CIS series thin film solar cell module and the making method |
US12/092,094 US7960642B2 (en) | 2005-10-31 | 2006-10-31 | CIS based thin-film photovoltaic module and process for producing the same |
PCT/JP2006/321778 WO2007052671A1 (ja) | 2005-10-31 | 2006-10-31 | Cis系薄膜太陽電池モジュール及びその製造方法 |
CNA2006800408353A CN101300683A (zh) | 2005-10-31 | 2006-10-31 | Cis系薄膜太阳能电池模块及其制造方法 |
EP06822707.3A EP1947704B1 (en) | 2005-10-31 | 2006-10-31 | Process for producing a cis-type thin-film solar battery module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005316846A JP4918247B2 (ja) | 2005-10-31 | 2005-10-31 | Cis系薄膜太陽電池モジュール及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007123725A JP2007123725A (ja) | 2007-05-17 |
JP4918247B2 true JP4918247B2 (ja) | 2012-04-18 |
Family
ID=38005824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005316846A Expired - Fee Related JP4918247B2 (ja) | 2005-10-31 | 2005-10-31 | Cis系薄膜太陽電池モジュール及びその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7960642B2 (ja) |
EP (1) | EP1947704B1 (ja) |
JP (1) | JP4918247B2 (ja) |
KR (1) | KR101275651B1 (ja) |
CN (1) | CN101300683A (ja) |
TW (1) | TW200729529A (ja) |
WO (1) | WO2007052671A1 (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009041660A1 (ja) | 2007-09-28 | 2009-04-02 | Fujifilm Corporation | 太陽電池用基板および太陽電池 |
EP2197040A1 (en) | 2007-09-28 | 2010-06-16 | Fujifilm Corporation | Solar cell |
JP4974986B2 (ja) | 2007-09-28 | 2012-07-11 | 富士フイルム株式会社 | 太陽電池用基板および太陽電池 |
US20100180927A1 (en) * | 2008-08-27 | 2010-07-22 | Stion Corporation | Affixing method and solar decal device using a thin film photovoltaic and interconnect structures |
TW201031003A (en) * | 2008-12-15 | 2010-08-16 | First Solar Inc | Solar module with encapsulated edge |
EP2372783A1 (en) | 2008-12-26 | 2011-10-05 | Kyocera Corporation | Photoelectric conversion module |
KR101005611B1 (ko) * | 2008-12-31 | 2011-01-06 | 주식회사 효성 | 태양전지모듈 및 그 제조방법 |
WO2010088725A1 (en) * | 2009-02-04 | 2010-08-12 | Applied Hybrid Energy Pty Ltd | A module for a solar array |
KR101054988B1 (ko) * | 2009-03-31 | 2011-08-05 | 엘지이노텍 주식회사 | 태양광 발전장치 및 이의 제조방법 |
KR101014106B1 (ko) * | 2009-03-31 | 2011-02-10 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
KR101054959B1 (ko) * | 2009-03-31 | 2011-08-05 | 엘지이노텍 주식회사 | 태양광 발전장치 및 이의 제조방법 |
KR20110048406A (ko) * | 2009-11-02 | 2011-05-11 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
US20110259395A1 (en) * | 2010-04-21 | 2011-10-27 | Stion Corporation | Single Junction CIGS/CIS Solar Module |
KR101231493B1 (ko) * | 2011-01-24 | 2013-02-07 | 엘지이노텍 주식회사 | 태양전지 모듈 |
CN102163635A (zh) * | 2011-02-17 | 2011-08-24 | 林胜军 | 可颜色异形化的太阳能封装结构 |
KR101163198B1 (ko) | 2011-03-24 | 2012-07-05 | 한국철강 주식회사 | 복층형 광기전력 모듈 및 그 제조 방법 |
US20130037080A1 (en) * | 2011-08-10 | 2013-02-14 | Ron HELFAN | Transportable solar harvester system and method |
KR101417219B1 (ko) * | 2011-11-29 | 2014-07-09 | 엘지이노텍 주식회사 | 태양광 발전장치 |
JP5869318B2 (ja) * | 2011-11-30 | 2016-02-24 | 京セラ株式会社 | 太陽電池パネル |
JP5762466B2 (ja) * | 2013-05-08 | 2015-08-12 | キヤノン・コンポーネンツ株式会社 | イメージセンサユニット、紙葉類識別装置、画像読取装置および画像形成装置 |
JP6180842B2 (ja) * | 2013-07-30 | 2017-08-16 | ソーラーフロンティア株式会社 | 薄膜太陽電池モジュールの製造方法 |
DE102014202232A1 (de) * | 2014-02-07 | 2015-08-13 | Robert Bosch Gmbh | Plattenkondensator für ein Solarmodul, Solarpanel und Verfahren zum Betreiben eines Solarpanels |
KR101868957B1 (ko) * | 2016-12-02 | 2018-06-19 | 한국철도기술연구원 | 보호층을 포함하는 cigs 태양전지모듈 및 이의 제조 방법 |
WO2018216718A1 (ja) | 2017-05-23 | 2018-11-29 | Agc株式会社 | 太陽電池用カバーガラス及び太陽電池モジュール |
CN207442741U (zh) * | 2017-10-13 | 2018-06-01 | 北京铂阳顶荣光伏科技有限公司 | 地面光伏发电模块单元及地面光伏发电模块 |
EP3726592A4 (en) | 2017-12-11 | 2021-08-18 | Agc Inc. | OPTICAL LAYER, METHOD FOR MANUFACTURING AN OPTICAL LAYER, SOLAR BATTERY MODULE WITH OPTICAL LAYER, OUTER WALL MATERIAL FOR CONSTRUCTION AND STRUCTURE |
CN113871380B (zh) * | 2021-10-30 | 2022-09-23 | 广州市祺虹电子科技有限公司 | 一种光电光伏玻璃 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58216476A (ja) * | 1982-06-11 | 1983-12-16 | Hitachi Ltd | 光発電蓄電装置 |
JPS60137306U (ja) | 1984-02-23 | 1985-09-11 | 株式会社クボタ | 溶湯スラグ用厚さ検出装置 |
JPS61283173A (ja) * | 1985-06-10 | 1986-12-13 | Sharp Corp | 電源素子 |
JPS6248761A (ja) * | 1985-08-27 | 1987-03-03 | Nissan Motor Co Ltd | 成形用樹脂組成物 |
JPS6248761U (ja) | 1985-09-06 | 1987-03-26 | ||
JP2883364B2 (ja) * | 1989-09-04 | 1999-04-19 | 三洋電機株式会社 | 品質管理用タイマーシステム |
DE4442824C1 (de) * | 1994-12-01 | 1996-01-25 | Siemens Ag | Solarzelle mit Chalkopyrit-Absorberschicht |
TW446637B (en) * | 1996-05-28 | 2001-07-21 | Mitsui Chemicals Inc | Transparent laminates and optical filters for displays using the same |
AU3632697A (en) | 1996-08-12 | 1998-03-06 | Energenius, Inc. | Semiconductor supercapacitor system, method for making same and articles produced therefrom |
JPH10233522A (ja) * | 1997-02-21 | 1998-09-02 | Fuji Electric Co Ltd | 薄膜太陽電池およびその製造方法 |
DE19826923A1 (de) * | 1997-12-18 | 1999-12-23 | Josef Graf | Vorrichtung zur Energieversorgung von tragbaren Elektrogeräten |
JP4086353B2 (ja) * | 1998-02-05 | 2008-05-14 | キヤノン株式会社 | ラミネート体の製造方法及び太陽電池モジュールの製造方法 |
DE60041568D1 (de) * | 1999-09-01 | 2009-04-02 | Kaneka Corp | Dünnschichtsolarzellenmodul und entsprechendes Herstellungsverfahren |
JP2001274437A (ja) * | 2000-03-28 | 2001-10-05 | Nisshinbo Ind Inc | 太陽電池パネル用ラミネータにおける架橋工程の管理方法 |
FR2820241B1 (fr) * | 2001-01-31 | 2003-09-19 | Saint Gobain | Substrat transparent muni d'une electrode |
JP2003079054A (ja) * | 2001-08-31 | 2003-03-14 | Sanyo Electric Co Ltd | 蓄電池を備えた太陽光発電システム |
JP2003158825A (ja) * | 2001-09-04 | 2003-05-30 | Hitachi Ltd | 自然エネルギー利用発電装置と電力貯蔵用二次電池とのハイブリッドシステム及びその利用方法 |
US6559372B2 (en) * | 2001-09-20 | 2003-05-06 | Heliovolt Corporation | Photovoltaic devices and compositions for use therein |
JP2003258282A (ja) * | 2002-03-05 | 2003-09-12 | Honda Motor Co Ltd | 光吸収層の作製方法 |
JP2004063673A (ja) * | 2002-07-26 | 2004-02-26 | Bridgestone Corp | 太陽電池用封止膜及び太陽電池モジュールの製造方法 |
WO2004038811A1 (ja) * | 2002-10-25 | 2004-05-06 | Nakajima Glass Co., Inc. | 太陽電池モジュールの製造方法 |
JP4271433B2 (ja) * | 2002-12-05 | 2009-06-03 | 昭和シェル石油株式会社 | Cis系薄膜太陽電池モジュールの構成部材回収方法 |
JP2004319800A (ja) * | 2003-04-17 | 2004-11-11 | Canon Inc | 太陽電池モジュール |
JP2005050928A (ja) * | 2003-07-30 | 2005-02-24 | Kyocera Corp | 太陽電池モジュールおよび太陽電池モジュールの製造方法ならびに太陽電池モジュールの設置構造 |
DE20312599U1 (de) * | 2003-08-14 | 2003-12-24 | Behnke, Wolfgang Michael | Solarer Betriebs-Kondensator |
JP2005123552A (ja) | 2003-10-17 | 2005-05-12 | Kyoojin Kk | 太陽光発電ユニット |
JP2005317665A (ja) * | 2004-04-27 | 2005-11-10 | Nakajima Glass Co Inc | 太陽電池モジュールの製造方法 |
JP2005317714A (ja) * | 2004-04-28 | 2005-11-10 | Nakajima Glass Co Inc | 太陽電池モジュール及びその製造方法 |
-
2005
- 2005-10-31 JP JP2005316846A patent/JP4918247B2/ja not_active Expired - Fee Related
-
2006
- 2006-10-31 US US12/092,094 patent/US7960642B2/en not_active Expired - Fee Related
- 2006-10-31 WO PCT/JP2006/321778 patent/WO2007052671A1/ja active Application Filing
- 2006-10-31 EP EP06822707.3A patent/EP1947704B1/en not_active Not-in-force
- 2006-10-31 CN CNA2006800408353A patent/CN101300683A/zh active Pending
- 2006-10-31 KR KR1020087010613A patent/KR101275651B1/ko not_active IP Right Cessation
- 2006-10-31 TW TW095140220A patent/TW200729529A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2007052671A1 (ja) | 2007-05-10 |
EP1947704B1 (en) | 2017-01-11 |
JP2007123725A (ja) | 2007-05-17 |
TW200729529A (en) | 2007-08-01 |
EP1947704A1 (en) | 2008-07-23 |
US20090159112A1 (en) | 2009-06-25 |
CN101300683A (zh) | 2008-11-05 |
EP1947704A4 (en) | 2015-08-19 |
KR101275651B1 (ko) | 2013-06-14 |
KR20080075101A (ko) | 2008-08-14 |
US7960642B2 (en) | 2011-06-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4918247B2 (ja) | Cis系薄膜太陽電池モジュール及びその製造方法 | |
KR101215694B1 (ko) | 태양 전지 모듈 및 태양 전지 모듈의 제조 방법 | |
US8389850B2 (en) | Solar cell module and method of manufacturing the same | |
JP2003282900A (ja) | 太陽電池モジュール | |
JP2008258269A (ja) | 太陽電池モジュールおよびその製造方法 | |
CN102460727A (zh) | 成型的光电模块 | |
US20120037213A1 (en) | Backsheet for a photovoltaic module | |
EP2360741A2 (en) | Photovoltaic module and method for manufacturing the same | |
US20120305079A1 (en) | Solar cell module and method of manufacturing solar cell module | |
US20160043249A1 (en) | Solar cell module and method of fabricating the same | |
JP2009010222A (ja) | 太陽電池モジュール及び太陽電池モジュール装置 | |
JP5342150B2 (ja) | 太陽電池モジュール | |
JP2006278702A (ja) | 太陽電池モジュール及びその製造方法 | |
JP2014068005A (ja) | 太陽電池モジュール | |
EP2372783A1 (en) | Photoelectric conversion module | |
JP2012212948A (ja) | 太陽電池モジュール | |
JP2011155217A (ja) | 太陽電池モジュール | |
JP2001230437A (ja) | 太陽電池モジュール | |
CN215184006U (zh) | 一种半柔性太阳能光伏组件 | |
TWI704762B (zh) | 具有彈性透光保護層之太陽能光伏模組結構之製造方法/結構與其太陽能光伏電池片結構 | |
CN218039232U (zh) | 太阳能电池组件及太阳能电池安装组件 | |
KR102652131B1 (ko) | 방열 강판형 슁글드 태양광 모듈 및 그 제조방법 | |
JPWO2010073932A1 (ja) | 太陽電池モジュール | |
CN106601828A (zh) | 一种光伏瓦片 | |
CN201732799U (zh) | 太阳能光电板的连接结构 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20080708 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080725 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20080811 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110926 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111122 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120124 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120130 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150203 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4918247 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |