EP1069211A2 - Elektroplattierungslösungen - Google Patents

Elektroplattierungslösungen Download PDF

Info

Publication number
EP1069211A2
EP1069211A2 EP00305941A EP00305941A EP1069211A2 EP 1069211 A2 EP1069211 A2 EP 1069211A2 EP 00305941 A EP00305941 A EP 00305941A EP 00305941 A EP00305941 A EP 00305941A EP 1069211 A2 EP1069211 A2 EP 1069211A2
Authority
EP
European Patent Office
Prior art keywords
acid
poly
mercapto
composition according
leveller
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00305941A
Other languages
English (en)
French (fr)
Other versions
EP1069211A3 (de
Inventor
Qing Min Wang
Weiji Huang
Miu Ling Lau
Carol Hsiuchin Liu
Ce Ma
Edward K. Chang
Wenpin Ho
Richard C. Paciej
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Messer LLC
Original Assignee
BOC Group Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOC Group Inc filed Critical BOC Group Inc
Publication of EP1069211A2 publication Critical patent/EP1069211A2/de
Publication of EP1069211A3 publication Critical patent/EP1069211A3/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper

Definitions

  • This invention relates to improved copper electroplating solutions and, more particularly, to improved acid copper electroplating solutions and the use of new carriers, brighteners and levellers, as well as molecules, that combine carrier/brightener and carrier/leveller functionality.
  • Copper electroplating baths are used in a variety of industries. In the semiconductor industry in particular, there is an increasing need for such baths to meet decreasing device feature size, increasing wafer size and high yield.
  • Various proprietary electroplating bath chemistries are commercially available that claim success with regards to the copper metallisation process.
  • the bath chemistry should help to fill with copper small yet high aspect ratio trenches and vias, for example less than 0.18 ⁇ m, and an aspect ratio greater than 5, to obtain uniform and void free plating while maintaining high production rates.
  • the plating bath chemistries should also be relatively chemically stable, less corrosive and easily monitored and replenished.
  • Copper sulphate and sulphuric acid are the basic constituents of the acid copper electroplating bath chemistry.
  • Organic additives such as carriers, brighteners, levellers and combinations of these can assist in providing a plating bath which can fill the small and high aspect ratio trenches and vias without voids or seams.
  • As-plated copper deposits can be of uniform thickness and fine grain size, and highly "111" crystal orientated.
  • Brighteners not only produce fine and orientated grain structure for the as-plated deposits but also provide better chemical stability and solubility in the electroplating bath. Brighteners are typically water-soluble sulphonic acids containing mercapto and/or thio groups.
  • US Patent Specification No. 5,151,170 discloses a brightener that consists essentially of the hydrogen peroxide oxidation product of a dialkylamino-thioxomethyl-thioalkanesulphonic acid wherein each alkyl and alkane group individually contains 1 to 6 carbon atoms. They can produce fine copper deposits by masking the preferential growth sites/planes.
  • current brighteners can suffer from poor stability, oxidation by air and electrochemical oxidation at the anode, as well as catalytic decomposition at the copper surface. The decomposed products are often detrimental to copper deposition properties.
  • Levellers play a key role in void and seam free trench filling, i.e., superfilling or bottom-up filling.
  • the deposition rate needs to be much faster at the bottom of the features than on the side wall and shoulder of the trenches and vias.
  • different molecular size levellers are employed to tailor different generation (or size) of trenches and vias.
  • the large molecular size is usually preferred for the filling of larger trenches and vias since the diffusion of the levellers towards the bottom of trenches is much slower, which in turn results in extremely low leveller flux at the bottom and promotes bottom-up filling or superfilling.
  • the larger molecular size can eventually block the openings and prevent the copper ions from entering the trenches. This consequently creates voids when the size of the trench and vias is greatly reduced, for example of the order of 0.1 ⁇ m.
  • the as-plated copper deposits can complete self-annealing process in several hours to have a stable microstructure at room temperature.
  • US Patent Specification No. 5,051,154 discloses an aqueous electroplating solution comprising at least one soluble copper salt, an electrolyte and at least one organic additive capable of modifying the charge transfer overpotential of the solution in an amount sufficient to shift the overpotential by at least 150 millivolts and being independent of solution agitation.
  • This prior specification discloses the use of a wetting agent as a component additive in the system capable of modifying the charge transfer overpotential.
  • Additional additives can include a brightener along with the wetting agent and this can be selected from the group consisting of n,n-dimethyl-dithiocarbamic acid - (3-sulphopropyl) ester; 3-mercapto-propylsulphonic acid(sodium salt); carbonic acid-dithio-o-ethylester-s-ester with 3-mercapto-1-propane sulphonic acid(potassium salt); bisulphopropyl disulphide; 3-(benzthiazolyl-s-thio) propyl sulphonic acid (sodium salt); and pyridinium propyl sulphobetaine.
  • a brightener along with the wetting agent and this can be selected from the group consisting of n,n-dimethyl-dithiocarbamic acid - (3-sulphopropyl) ester; 3-mercapto-propylsulphonic acid(sodium salt); carbonic acid-dithio-o
  • the three component additive may also include levellers such as those selected from the group including 1-(2-hydroxyethyl)-2-imidazolidinethione; 4-mercaptopyridine; 2-mercaptothiazoline; ethylene thiourea; thiourea; and alkylated polyalkyleneimine.
  • levellers such as those selected from the group including 1-(2-hydroxyethyl)-2-imidazolidinethione; 4-mercaptopyridine; 2-mercaptothiazoline; ethylene thiourea; thiourea; and alkylated polyalkyleneimine.
  • the invention is concerned with the provision of an improved acid copper electroplating bath compositions and methods for preparing them, which generally overcome the problems disclosed above with existing compositions.
  • an acid copper electroplating composition comprising an aqueous solution of an acid and a copper salt, wherein at least one carrier compound, a water-soluble, mercapto-containing organic brightener compound and a leveller compound which comprises an organic compound containing single or multiple charged centres are present.
  • a method for copper plating or metallisation of advanced interconnects comprising immersing a substrate intended for advanced interconnects into the copper electroplating composition and conducting an electrochemical deposition process.
  • an acid and a copper salt are employed.
  • the acid is typically sulphuric acid while the copper salt can be selected from copper sulphate, copper acetate, copper fluoborate, cupric nitrate and copper pyrophosphate.
  • Additional inorganic additives can include both chloride and alkaline species.
  • the chloride can enhance cathode surface adsorption of organic additives such as the carrier and improve the oxidation of the anodes to improve plating efficiency.
  • Alkaline species such as ammonium hydroxide are added to reduce the acidity and corrosivity of the bath solution. Chloride can be added in an amount of about 20 to 100 parts per million parts water in the bath, while the alkaline is added in an amount necessary to reduce the pH of the solution.
  • the acid copper electroplating solution composition advantageously contains from about 50g to about 250g of copper salt per litre of water and about 60g to about 250g of sulphuric acid per litre of water.
  • organic additives such as carriers, brighteners, levellers, and combinations of these may also be employed to obtain high throwing power to fill the small and high aspect ratio trenches and vias.
  • the carriers used in this invention can comprise conventional ones used in the art, for example polyethylene glycol and poly(ethylene oxide), and polysaccharides.
  • the polysaccharides may comprise simple sugars such as fructose and glucose linked by glycosidic bonds, for example starch, cellulose, amylopectin and amylose.
  • the brighteners useful in the invention possess both stability and solubility in the copper electroplating bath.
  • the brighteners include both water soluble mercapto-containing organic compounds and other organic sulphides. Representative examples include but are not limited to N-methylallyl-N'-methylthiourea; tetramethylthiuram disulphide; ethylethylthiomethyl sulphoxide; ammonium diethyldithiocarbamate; dimethyl-2-thioxo-1,3-dithiole-4,5-dicarboxylate; 3-mercapto-1-propanesulphonic acid sodium salt; 3-mercapto-1-propanesulphonic acid; bis (2-mercaptoethyl) sulphide; ethylene trithio carbonate; ethanethiol; 2-mercaptoethanol; monothioglycerol (1-thioglycerol); 1,2-ethanedithiol; and thiodiethanol.
  • the most preferred brighteners are ammonium diethyldithiocarbamate, 3-mercapto-1-propanesulphonic acid sodium salt, and its free acid form.
  • 3-Mercapto-1-propanesulphonic acid is prepared from 3-mercapto-1-propanesulphonic acid sodium salt by an ion-exchange process using cation ion-exchange resins such as Dowex DR2030 (20-30 mesh), Dowex HCR-W2 (16-40 mesh), Dowex 50Wx8-100 (50-100 mesh, 1.7 meq / mL, 0.80 g / mL), and Dowex 50Wx8-200 (100-200 mesh, 1.7 meq / mL, 0.80 g / mL).
  • the sodium level can be reduced to a few ppm from about 1500 ppm in original 1 wt.% aqueous solution. Both a packed column with ion-exchange resin and a reaction flask approach using ion-exchange resin can remove sodium to low ppm levels.
  • the need for a sodium-free brightener is important in avoiding sodium contamination of the copper deposited thin layer.
  • the 3-mercapto-1-propanesulphonic acid can be prepared by both ion-exchange column and in a reaction flask, and sodium removal efficiency was better than 99% for both methods. This is important regarding bath life as the buildup of sodium in the bath over time would require the bath to be dumped and replenished once the sodium level becomes unacceptably high.
  • the levellers useful in this invention possess single or multiple positively charged centres that will form single or multiple positively charged sites after protonation in the acidic conditions of the bath.
  • the levellers are divided into three groups - polymeric levellers, low molecular weight levellers, and organic dyes.
  • polymeric levellers include but are not limited to polyethylenimine, 80% ethoxylated; poly(allylamine); poly(allylamine hydrochloride); polyaniline, sulphonated, 5 wt. % in water, 75 mole % sulphonated; poly[bis(2-chloroethyl)ether-alt-1,3-bis[3-(dimethylamino)propyl]urea, quaternited; poly[N,N'-bis(2,2,6,6-tetramethyl-4-piperidinyl)-1,6-hexanediamine-co-2,4-dichloro-6-morpholino-1,3,5-triazine; polyacrylamide; poly(acrylamide-co-diallyldimethylammonium chloride); poly(diallyldimethylammonium chloride); poly(melamine-co-formaldehyde), partially methylated; poly(4-vinylpyridine), 25% cross-linked; poly((4
  • the most preferred polymeric levellers are poly[bis(2-chloroethyl)ether-alt-1,3-bis[3-(dimethylamino)propyl]urea, quaternited, and poly(diallyldimethylammonium chloride).
  • low molecular weight levellers include but are not limited to N-containing acyclic systems, N-containing five-membered heterocyclic systems, and N-containing six-membered heterocyclic systems. Most of them also contains mercapto-, sulphide, or disulphide functionalities.
  • N-containing acyclic systems include 2,5-dithiobiurea, dithiooxamide, 1-phenyl-2-thiourea, and diethylenetriamine. The most preferred one is diethylenetriamine.
  • N-containing five/six-membered heterocyclic systems include p-xylenebis(tetrahydrothiophenium) chloride, 2-thiohydantoin, pseudo thiohydantoin, (R)-(-)-thiazolidine-4-carboxylic acid, 3-(2'-thiopyridinium) propyl sulphonate, 2,2'-dipyridyl disulphide, 4,4'-dipyridyl disulphide, thionicotinamide, 4-(trifluoromethyl) -2-pyrimidinethiol, 2-mercapto-4-methylpyrimidine hydrochloride, 5-phenyl-1 H-1,2,4-triazole-3-thiol, 5-(4'-pyridyl)-1 H-1,2,4-triazole-3-thiol, 2-amino-6-purinethiol, 4-amino-5-(4'-pyridyl)-4 H-1,2,4-triazole-3-thiol
  • organic dyes include but are not limited to Bismarck Brown Y (C 18 H 15 N 8 •2HCl), Chicago Sky Blue 6B (C 34 H 24 N 5 O 16 S 4 Na 4 ), and Acid Violet, for example Acid Violet 7 (C 20 H 16 N 4 O 9 S 2 Na 2 ).
  • the organic additives are constantly consumed due to breakdown and oxidation in the electroplating process.
  • the consumed additives are generally compensated for by a replenishing process to maintain constant bath chemistry. Numerous consumption/replenishment cycles may proceed before a complete replacement of the plating bath is necessary. As a result of this process, there is an accumulation of contaminants which can be a critical problem. The contaminants may interfere with the functioning of organic additives and may cause inconsistent plating that is unacceptable to the semiconductor industry.
  • the invention further comprises the use of molecules that combine brightener/carrier and carrier/leveller functionalities.
  • the combination of brightener/carrier is typically a monomeric to polymeric protein chain where the chain is linked by sulphide and disulphide bridges.
  • the combination of carrier/leveller can help improve the stability of the leveller while simplifying the bath by reducing the number of organic additives.
  • Such materials can be poly[bis(2-chloroethyl)ether-alt-1,3-bis[3-(dimethylamino)propyl]urea, quaternited, and poly(melamine-co-formaldehyde), partially methylated.
  • the carrier of the invention may be added in an amount ranging from about 2 to about 1000 parts per million parts water.
  • the leveller may be added in an amount of about 2 parts to about 1000 parts per million parts of water in the electroplating solution.
  • the brightener may be added in an amount ranging from about 5 parts to about 100 parts per million parts water.
  • the combination carrier/brightener When employed, it is added in an amount ranging from about 5 to about 100 parts per million parts water.
  • the combination carrier/leveller when employed may be added in an amount ranging from about 2 to about 1000 parts per million.
  • additives that are found in the baths include wetting agents such as carboxylic acids and antioxidants.
  • Carboxylic acids such as citric acid improve wetting ability of the cathode and provide better adsorption of the organic additives to the cathode.
  • these are added in a range of about 2 to about 1000 parts per million parts water in the bath.
  • Brighteners tend to be oxidised in the vicinity of the anode during and without plating. Oxidised brighteners lose their functionality and cause an inconsistent plating rate and poor quality of the as-plated object.
  • the oxidising agents near the cathode are typically hydrogen peroxide and oxygen. Continuously purging the bath solution near the anode side with an inert gas is preferred as this will generally expel oxygen out of the solution.
  • the additive packages of the invention may be added to the aqueous acid copper electroplating bath either individually or as combinations depending upon the type of substrate being plated.
  • the plating solutions of this invention are used in a conventional manner. They are preferably used at room temperature or higher temperature. During plating, the bath solution is preferably agitated by inert gas, air sparger or by mechanical means.
  • the plating current density is preferably between 3 mA/cm 2 and 40 mA/cm 2 depending on aspect ratio of trenches and vias.
  • the wave form can be direct current (DC), pulse current (PC) or pulse reverse current (PRC).

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
EP00305941A 1999-07-15 2000-07-13 Elektroplattierungslösungen Withdrawn EP1069211A3 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14415999P 1999-07-15 1999-07-15
US144159P 1999-07-15
US58359900A 2000-05-31 2000-05-31
US583599 2000-05-31

Publications (2)

Publication Number Publication Date
EP1069211A2 true EP1069211A2 (de) 2001-01-17
EP1069211A3 EP1069211A3 (de) 2003-12-17

Family

ID=26841728

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00305941A Withdrawn EP1069211A3 (de) 1999-07-15 2000-07-13 Elektroplattierungslösungen

Country Status (4)

Country Link
US (1) US20040187731A1 (de)
EP (1) EP1069211A3 (de)
JP (1) JP2001073182A (de)
KR (1) KR20010015342A (de)

Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002068727A2 (en) * 2001-02-23 2002-09-06 Ebara Corporation Copper-plating solution, plating method and plating apparatus
EP1357989A1 (de) * 2001-02-07 2003-11-05 Mykrolis Corporation Verfahren zur entgasung einer wässrigen galvanischen lösung
WO2004009876A1 (ja) * 2002-07-23 2004-01-29 Nikko Materials Co., Ltd. 特定骨格を有するアミン化合物及び有機硫黄化合物を添加剤として含む銅電解液並びにそれにより製造される電解銅箔
WO2004035874A1 (ja) * 2002-10-21 2004-04-29 Nikko Materials Co., Ltd. 特定骨格を有する四級アミン化合物及び有機硫黄化合物を添加剤として含む銅電解液並びにそれにより製造される電解銅箔
EP1426469A1 (de) * 2002-11-28 2004-06-09 Shipley Company, L.L.C. Verfahren zur elektrolytischen Kupferplattierung
WO2004059040A1 (ja) * 2002-12-25 2004-07-15 Nikko Materials Co., Ltd. 特定骨格を有する四級アミン化合物重合体及び有機硫黄化合物を添加剤として含む銅電解液並びにそれにより製造される電解銅箔
WO2006069369A2 (en) * 2004-12-21 2006-06-29 Intel Corporation A method for constructing contact formations
US7128822B2 (en) 2003-06-04 2006-10-31 Shipley Company, L.L.C. Leveler compounds
CN100419129C (zh) * 2004-03-29 2008-09-17 台湾积体电路制造股份有限公司 铜电镀的电解液
US7510639B2 (en) 2004-07-22 2009-03-31 Rohm And Haas Electronic Materials Llc Leveler compounds
US7662981B2 (en) 2005-07-16 2010-02-16 Rohm And Haas Electronic Materials Llc Leveler compounds
EP2161355A1 (de) * 2007-05-21 2010-03-10 C. Uyemura & Co., Ltd. Kupfergalvanisierungsbad
EP2392692A1 (de) 2010-06-01 2011-12-07 Basf Se Zusammensetzung zur Metallgalvanisierung mit Verlaufmittel
WO2011151785A1 (en) 2010-06-01 2011-12-08 Basf Se Composition for metal electroplating comprising leveling agent
CN102644095A (zh) * 2011-02-18 2012-08-22 三星电子株式会社 电镀铜方法
US8262891B2 (en) 2005-09-30 2012-09-11 Rohm And Haas Electronic Materials Llc Leveler compounds
EP2537962A1 (de) 2011-06-22 2012-12-26 Atotech Deutschland GmbH Verfahren zur Kupferplattierung
WO2012095667A3 (en) * 2011-01-12 2013-10-03 Johnson Matthey Public Limited Company Improvements in coating technology
CN103469260A (zh) * 2013-09-27 2013-12-25 昆山纯柏精密五金有限公司 一种五金件的酸性镀铜的方法
EP2735627A1 (de) 2012-11-26 2014-05-28 ATOTECH Deutschland GmbH Kupferplattierbadzusammensetzung
EP2770087A1 (de) * 2013-02-25 2014-08-27 Rohm and Haas Electronic Materials LLC Elektroplattierungsbad
US20160076160A1 (en) * 2014-09-15 2016-03-17 Enthone Inc. Levelers for copper deposition in microelectronics
WO2016169952A1 (en) 2015-04-20 2016-10-27 Atotech Deutschland Gmbh Electrolytic copper plating bath compositions and a method for their use
US9562300B2 (en) 2014-12-30 2017-02-07 Rohm And Haas Electronic Materials Llc Sulfonamide based polymers for copper electroplating
EP3135709A1 (de) 2015-08-31 2017-03-01 ATOTECH Deutschland GmbH Imidazoylharnstoffpolymere und deren verwendung in metall- oder metalllegierung-galvanisierungsbadzusammensetzungen
WO2017037040A1 (en) 2015-08-31 2017-03-09 Atotech Deutschland Gmbh Aqueous copper plating baths and a method for deposition of copper or copper alloy onto a substrate
US9598786B2 (en) 2014-12-30 2017-03-21 Rohm And Haas Electronic Materials Llc Amino sulfonic acid based polymers for copper electroplating
US9783905B2 (en) 2014-12-30 2017-10-10 Rohm and Haas Electronic Mateirals LLC Reaction products of amino acids and epoxies
EP3360988A1 (de) 2017-02-09 2018-08-15 ATOTECH Deutschland GmbH Pyridiniumverbindungen, ein syntheseverfahren dafür, metall- oder metalllegierungsplattierungsbäder mit besagten pyridiniumverbindungen und verfahren zur verwendung besagter metall- oder metalllegierungsplattierungsbäder
EP3508620A1 (de) 2018-01-09 2019-07-10 ATOTECH Deutschland GmbH Ureylenadditiv, dessen verwendung und herstellungsverfahren dafür
CN110938848A (zh) * 2019-12-26 2020-03-31 江苏艾森半导体材料股份有限公司 一种用于电解沉积铜的组合物及酸铜电镀液
CN112144083A (zh) * 2020-09-22 2020-12-29 广州三孚新材料科技股份有限公司 一种太阳能电池用无氰镀铜电镀液及制备方法
CN112236548A (zh) * 2018-07-27 2021-01-15 三菱综合材料株式会社 锡合金镀液
US11060200B2 (en) 2018-07-27 2021-07-13 Mitsubishi Materials Corporation Tin alloy plating solution
CN113430598A (zh) * 2021-08-27 2021-09-24 深圳市板明科技股份有限公司 一种线路板盲孔填充电镀铜溶液及其应用
EP3933073A1 (de) 2020-06-29 2022-01-05 ATOTECH Deutschland GmbH Kupfergalvanisierbad
EP4032930A1 (de) 2021-01-22 2022-07-27 Atotech Deutschland GmbH & Co. KG Biuretbasierte quaternisierte polymere und deren verwendung in metall- oder metalllegierungsbädern
US12004295B2 (en) 2018-01-29 2024-06-04 Corning Incorporated Articles including metallized vias

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4793530B2 (ja) * 2001-07-02 2011-10-12 上村工業株式会社 硫酸銅めっき浴
US6736954B2 (en) * 2001-10-02 2004-05-18 Shipley Company, L.L.C. Plating bath and method for depositing a metal layer on a substrate
US8002962B2 (en) * 2002-03-05 2011-08-23 Enthone Inc. Copper electrodeposition in microelectronics
US7316772B2 (en) * 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
JP4534460B2 (ja) * 2002-11-11 2010-09-01 凸版印刷株式会社 銅めっき硬度維持剤及び銅めっき方法並びにそれを用いたグラビア版、レンズ金型
EP1477588A1 (de) * 2003-02-19 2004-11-17 Rohm and Haas Electronic Materials, L.L.C. Kupfer Galvanisierungszusammensetzung für wafers
JP2005029818A (ja) * 2003-07-09 2005-02-03 Ebara Corp めっき方法
CN1997776A (zh) * 2004-08-18 2007-07-11 荏原优莱特科技股份有限公司 铜电镀用添加剂及采用该添加剂的电子电路基板的制法
JP4976725B2 (ja) * 2005-03-31 2012-07-18 三井金属鉱業株式会社 銅電解液及びその銅電解液を用いた電析銅皮膜の形成方法
JP2007146289A (ja) * 2005-10-31 2007-06-14 Mitsui Mining & Smelting Co Ltd 電解銅箔の製造方法、該製造方法で得られる電解銅箔、該電解銅箔を用いて得られる表面処理銅箔及び該電解銅箔又は該表面処理銅箔を用いて得られる銅張積層板
JP4816901B2 (ja) * 2005-11-21 2011-11-16 上村工業株式会社 電気銅めっき浴
US20070158199A1 (en) * 2005-12-30 2007-07-12 Haight Scott M Method to modulate the surface roughness of a plated deposit and create fine-grained flat bumps
JP4895734B2 (ja) * 2006-09-08 2012-03-14 荏原ユージライト株式会社 めっき用レベリング剤、酸性銅めっき浴用添加剤組成物、酸性銅めっき浴および該めっき浴を用いるめっき方法
JP5255280B2 (ja) * 2006-10-03 2013-08-07 三井金属鉱業株式会社 硫酸酸性銅電解液の調製方法
JP2008088524A (ja) * 2006-10-04 2008-04-17 Ebara Udylite Kk プリント基板用硫酸銅めっき液
US20080181813A1 (en) * 2007-01-26 2008-07-31 Baker Hughes Incorporated Novel Mercaptan-Based Corrosion Inhibitors
US20090188805A1 (en) * 2008-01-25 2009-07-30 Government Of The United States Of America, As Represented By The Superconformal electrodeposition of nickel iron and cobalt magnetic alloys
ES2624637T3 (es) * 2008-05-30 2017-07-17 Atotech Deutschland Gmbh Aditivo de electrogalvanoplastia para la deposición de una aleación de un metal del grupo IB/binaria o ternaria del grupo IB-grupo IIIA/ternaria, cuaternaria o quinaria del grupo IB, el grupo IIIA-grupo VIA
JP5525762B2 (ja) * 2008-07-01 2014-06-18 上村工業株式会社 無電解めっき液及びそれを用いた無電解めっき方法、並びに配線基板の製造方法
US8388824B2 (en) 2008-11-26 2013-03-05 Enthone Inc. Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers
EP2199315B1 (de) 2008-12-19 2013-12-11 Basf Se Egalisierungswirkstoff enthaltende Galvanisierzusammensetzung
JP5578697B2 (ja) * 2009-04-03 2014-08-27 公立大学法人大阪府立大学 銅充填方法
JP5568250B2 (ja) 2009-05-18 2014-08-06 公立大学法人大阪府立大学 銅を充填する方法
EP2504396B1 (de) 2009-11-27 2021-02-24 Basf Se Zusammensetzung zur kupfergalvanisierung mit verlaufmittel
MY156690A (en) 2010-03-18 2016-03-15 Basf Se Composition for metal electroplating comprising leveling agent
TWI572750B (zh) 2010-05-24 2017-03-01 安頌股份有限公司 直通矽穿孔之銅充填
JP5505153B2 (ja) * 2010-07-16 2014-05-28 上村工業株式会社 電気銅めっき浴及び電気銅めっき方法
JP2012127003A (ja) 2010-12-15 2012-07-05 Rohm & Haas Electronic Materials Llc 銅層を均一にする電気めっき方法
EP2865787A1 (de) * 2013-10-22 2015-04-29 ATOTECH Deutschland GmbH Kupfergalvanisierungsverfahren
JP6474410B2 (ja) * 2013-12-09 2019-02-27 アヴニ 電気化学的に不活性なカチオンを含む銅電着浴
US10450667B2 (en) 2014-10-27 2019-10-22 International Business Machines Corporation System for treating solution for use in electroplating application and method for treating solution for use in electroplating application
US10932371B2 (en) 2014-11-05 2021-02-23 Corning Incorporated Bottom-up electrolytic via plating method
CN107636209B (zh) * 2015-06-26 2021-07-02 住友金属矿山股份有限公司 导电性基板
CN105239109A (zh) * 2015-10-28 2016-01-13 福州瑞华印制线路板有限公司 一种哈林槽镀铜方法
CN105200467B (zh) * 2015-11-02 2019-01-29 江苏梦得新材料科技有限公司 一种凹版硬铜添加剂及镀液
WO2017090161A1 (ja) * 2015-11-26 2017-06-01 近藤　和夫 酸性銅めっき液、酸性銅めっき物および半導体デバイスの製造方法
KR102662397B1 (ko) * 2018-10-23 2024-05-02 솔브레인 주식회사 전기도금 조성물 및 전기도금 방법
US11746433B2 (en) * 2019-11-05 2023-09-05 Macdermid Enthone Inc. Single step electrolytic method of filling through holes in printed circuit boards and other substrates
KR20230121857A (ko) * 2021-01-20 2023-08-21 후지필름 가부시키가이샤 도금액, 및, 금속 충전 구조체의 제조 방법
CN113956479B (zh) * 2021-11-26 2022-12-02 电子科技大学 电镀铜加速剂及合成方法和应用
CN116751362B (zh) * 2023-08-21 2024-01-09 广东腐蚀科学与技术创新研究院 一种水溶性二胺基脲聚合物及其制备方法和应用

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4430173A (en) * 1981-07-24 1984-02-07 Rhone-Poulenc Specialties Chimiques Additive composition, bath and process for acid copper electroplating
US5051154A (en) * 1988-08-23 1991-09-24 Shipley Company Inc. Additive for acid-copper electroplating baths to increase throwing power
US5174886A (en) * 1991-02-22 1992-12-29 Mcgean-Rohco, Inc. High-throw acid copper plating using inert electrolyte
US5433840A (en) * 1991-08-07 1995-07-18 Atotech Deutschland Gmbh Acid bath for the galvanic deposition of copper, and the use of such a bath
US5849171A (en) * 1990-10-13 1998-12-15 Atotech Deutschland Gmbh Acid bath for copper plating and process with the use of this combination

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2954331A (en) * 1958-08-14 1960-09-27 Dayton Bright Copper Company Bright copper plating bath
NL291575A (de) * 1962-04-16
US3328273A (en) * 1966-08-15 1967-06-27 Udylite Corp Electro-deposition of copper from acidic baths
US3615736A (en) * 1969-01-06 1971-10-26 Enthone Electroless copper plating bath
BE755019A (fr) * 1969-08-19 1971-02-19 Kuraray Co Materiau en feuille utilisable comme succedane du cuir.
US3715289A (en) * 1971-02-08 1973-02-06 Stauffer Chemical Co Brightener composition for acid copper electroplating baths
US4004956A (en) * 1974-08-14 1977-01-25 Enthone, Incorporated Selectively stripping tin or tin-lead alloys from copper substrates
US4134803A (en) * 1977-12-21 1979-01-16 R. O. Hull & Company, Inc. Nitrogen and sulfur compositions and acid copper plating baths
JPS6021240B2 (ja) * 1980-01-12 1985-05-25 株式会社小糸製作所 堆積される銅をメッキ液に補給する方法及び装置
US4304646A (en) * 1980-10-27 1981-12-08 Enthone, Incorporated Method for selective removal of copper contaminants from activator solutions containing palladium and tin
US4376685A (en) * 1981-06-24 1983-03-15 M&T Chemicals Inc. Acid copper electroplating baths containing brightening and leveling additives
US4384930A (en) * 1981-08-21 1983-05-24 Mcgean-Rohco, Inc. Electroplating baths, additives therefor and methods for the electrodeposition of metals
US4490220A (en) * 1982-09-30 1984-12-25 Learonal, Inc. Electrolytic copper plating solutions
US4555315A (en) * 1984-05-29 1985-11-26 Omi International Corporation High speed copper electroplating process and bath therefor
US4790912A (en) * 1985-06-06 1988-12-13 Techno-Instruments Investments Ltd. Selective plating process for the electrolytic coating of circuit boards without an electroless metal coating
US4717439A (en) * 1985-10-24 1988-01-05 Enthone, Incorporated Process for the treatment of copper oxide in the preparation of printed circuit boards
US4808481A (en) * 1986-10-31 1989-02-28 American Cyanamid Company Injection molding granules comprising copper coated fibers
US4786746A (en) * 1987-09-18 1988-11-22 Pennsylvania Research Corporation Copper electroplating solutions and methods of making and using them
US4948474A (en) * 1987-09-18 1990-08-14 Pennsylvania Research Corporation Copper electroplating solutions and methods
US4897165A (en) * 1988-08-23 1990-01-30 Shipley Company Inc. Electroplating composition and process for plating through holes in printed circuit boards
US4954226A (en) * 1988-12-21 1990-09-04 International Business Machines Corporation Additive plating bath and process
US5215645A (en) * 1989-09-13 1993-06-01 Gould Inc. Electrodeposited foil with controlled properties for printed circuit board applications and procedures and electrolyte bath solutions for preparing the same
US5147905A (en) * 1991-05-01 1992-09-15 The Dow Chemical Company Advanced and unadvanced compositions, nucleophilic derivatives thereof and curable and coating compositions thereof
US5151170A (en) * 1991-12-19 1992-09-29 Mcgean-Rohco, Inc. Acid copper electroplating bath containing brightening additive
US5266212A (en) * 1992-10-13 1993-11-30 Enthone-Omi, Inc. Purification of cyanide-free copper plating baths
US5328589A (en) * 1992-12-23 1994-07-12 Enthone-Omi, Inc. Functional fluid additives for acid copper electroplating baths
US5630950A (en) * 1993-07-09 1997-05-20 Enthone-Omi, Inc. Copper brightening process and bath
US5402465A (en) * 1993-12-02 1995-03-28 Foltz; Jack D. Telephone trouble isolator
US5730854A (en) * 1996-05-30 1998-03-24 Enthone-Omi, Inc. Alkoxylated dimercaptans as copper additives and de-polarizing additives
US5733429A (en) * 1996-09-10 1998-03-31 Enthone-Omi, Inc. Polyacrylic acid additives for copper electrorefining and electrowinning
US5750018A (en) * 1997-03-18 1998-05-12 Learonal, Inc. Cyanide-free monovalent copper electroplating solutions
US5863410A (en) * 1997-06-23 1999-01-26 Circuit Foil Usa, Inc. Process for the manufacture of high quality very low profile copper foil and copper foil produced thereby
DE69929967T2 (de) * 1998-04-21 2007-05-24 Applied Materials, Inc., Santa Clara Elektroplattierungssystem und verfahren zur elektroplattierung auf substraten

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4430173A (en) * 1981-07-24 1984-02-07 Rhone-Poulenc Specialties Chimiques Additive composition, bath and process for acid copper electroplating
US5051154A (en) * 1988-08-23 1991-09-24 Shipley Company Inc. Additive for acid-copper electroplating baths to increase throwing power
US5849171A (en) * 1990-10-13 1998-12-15 Atotech Deutschland Gmbh Acid bath for copper plating and process with the use of this combination
US5174886A (en) * 1991-02-22 1992-12-29 Mcgean-Rohco, Inc. High-throw acid copper plating using inert electrolyte
US5433840A (en) * 1991-08-07 1995-07-18 Atotech Deutschland Gmbh Acid bath for the galvanic deposition of copper, and the use of such a bath

Cited By (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1357989A4 (de) * 2001-02-07 2005-05-18 Mykrolis Corp Verfahren zur entgasung einer wässrigen galvanischen lösung
EP1357989A1 (de) * 2001-02-07 2003-11-05 Mykrolis Corporation Verfahren zur entgasung einer wässrigen galvanischen lösung
WO2002068727A3 (en) * 2001-02-23 2002-12-12 Ebara Corp Copper-plating solution, plating method and plating apparatus
WO2002068727A2 (en) * 2001-02-23 2002-09-06 Ebara Corporation Copper-plating solution, plating method and plating apparatus
WO2004009876A1 (ja) * 2002-07-23 2004-01-29 Nikko Materials Co., Ltd. 特定骨格を有するアミン化合物及び有機硫黄化合物を添加剤として含む銅電解液並びにそれにより製造される電解銅箔
CN1293235C (zh) * 2002-07-23 2007-01-03 日矿金属株式会社 铜电解液以及由其制造的电解铜箔
US7005055B2 (en) 2002-07-23 2006-02-28 Nikko Materials Co., Ltd. Copper electrolytic solution containing amine compound having specific skeleton and organosulfur compound as additives, and electrolytic copper foil produced using the same
US7144491B2 (en) 2002-10-21 2006-12-05 Nikko Materials Co., Ltd. Copper electrolytic solution containing organic sulfur compound and quaternary amine compound of specified skeleton as additives and electrolytic copper foil produced therewith
WO2004035874A1 (ja) * 2002-10-21 2004-04-29 Nikko Materials Co., Ltd. 特定骨格を有する四級アミン化合物及び有機硫黄化合物を添加剤として含む銅電解液並びにそれにより製造される電解銅箔
US7771835B2 (en) 2002-10-21 2010-08-10 Nippon Mining & Metals Co., Ltd. Copper electrolytic solution containing quaternary amine compound with specific skeleton and oragno-sulfur compound as additives, and electrolytic copper foil manufactured using the same
CN1321225C (zh) * 2002-10-21 2007-06-13 日矿金属株式会社 含有季铵化合物和有机硫化合物作为添加剂的铜电解液以及由此制造的电解铜箔
US6977035B2 (en) 2002-11-28 2005-12-20 Shipley Company, L.L.C. Method for electrolytic copper plating
EP1426469A1 (de) * 2002-11-28 2004-06-09 Shipley Company, L.L.C. Verfahren zur elektrolytischen Kupferplattierung
WO2004059040A1 (ja) * 2002-12-25 2004-07-15 Nikko Materials Co., Ltd. 特定骨格を有する四級アミン化合物重合体及び有機硫黄化合物を添加剤として含む銅電解液並びにそれにより製造される電解銅箔
US7128822B2 (en) 2003-06-04 2006-10-31 Shipley Company, L.L.C. Leveler compounds
CN100419129C (zh) * 2004-03-29 2008-09-17 台湾积体电路制造股份有限公司 铜电镀的电解液
US7510639B2 (en) 2004-07-22 2009-03-31 Rohm And Haas Electronic Materials Llc Leveler compounds
WO2006069369A2 (en) * 2004-12-21 2006-06-29 Intel Corporation A method for constructing contact formations
WO2006069369A3 (en) * 2004-12-21 2007-04-12 Intel Corp A method for constructing contact formations
US7442634B2 (en) 2004-12-21 2008-10-28 Intel Corporation Method for constructing contact formations
US7662981B2 (en) 2005-07-16 2010-02-16 Rohm And Haas Electronic Materials Llc Leveler compounds
US20130001088A1 (en) * 2005-09-30 2013-01-03 Rohm And Haas Electronic Materials Llc Leveler compounds
US8506788B2 (en) 2005-09-30 2013-08-13 Rohm And Haas Electronic Materials Llc Leveler compounds
US8262891B2 (en) 2005-09-30 2012-09-11 Rohm And Haas Electronic Materials Llc Leveler compounds
EP2161355A1 (de) * 2007-05-21 2010-03-10 C. Uyemura & Co., Ltd. Kupfergalvanisierungsbad
US8679317B2 (en) 2007-05-21 2014-03-25 C. Uyemura & Co., Ltd. Copper electroplating bath
EP2161355A4 (de) * 2007-05-21 2012-01-25 Uyemura C & Co Ltd Kupfergalvanisierungsbad
US9683302B2 (en) 2010-06-01 2017-06-20 Basf Se Composition for metal electroplating comprising leveling agent
WO2011151785A1 (en) 2010-06-01 2011-12-08 Basf Se Composition for metal electroplating comprising leveling agent
EP2392692A1 (de) 2010-06-01 2011-12-07 Basf Se Zusammensetzung zur Metallgalvanisierung mit Verlaufmittel
WO2012095667A3 (en) * 2011-01-12 2013-10-03 Johnson Matthey Public Limited Company Improvements in coating technology
CN102644095A (zh) * 2011-02-18 2012-08-22 三星电子株式会社 电镀铜方法
CN102644095B (zh) * 2011-02-18 2016-06-08 三星电子株式会社 电镀铜方法
WO2012175249A1 (en) 2011-06-22 2012-12-27 Atotech Deutschland Gmbh Method for copper plating
EP2537962A1 (de) 2011-06-22 2012-12-26 Atotech Deutschland GmbH Verfahren zur Kupferplattierung
CN103703167A (zh) * 2011-06-22 2014-04-02 安美特德国有限公司 镀铜方法
US9506158B2 (en) 2011-06-22 2016-11-29 Atotech Deutschland Gmbh Method for copper plating
CN103703167B (zh) * 2011-06-22 2016-06-29 安美特德国有限公司 镀铜方法
WO2014079737A2 (en) 2012-11-26 2014-05-30 Atotech Deutschland Gmbh Copper plating bath composition
EP2735627A1 (de) 2012-11-26 2014-05-28 ATOTECH Deutschland GmbH Kupferplattierbadzusammensetzung
CN104005060A (zh) * 2013-02-25 2014-08-27 罗门哈斯电子材料有限公司 电镀浴
EP2770087A1 (de) * 2013-02-25 2014-08-27 Rohm and Haas Electronic Materials LLC Elektroplattierungsbad
CN103469260A (zh) * 2013-09-27 2013-12-25 昆山纯柏精密五金有限公司 一种五金件的酸性镀铜的方法
CN107079591A (zh) * 2014-09-15 2017-08-18 麦克德米德恩索股份有限公司 在微电子中用于铜沉积的流平剂
US10294574B2 (en) 2014-09-15 2019-05-21 Macdermid Enthone Inc. Levelers for copper deposition in microelectronics
EP3195708A4 (de) * 2014-09-15 2018-07-18 Macdermid Enthone Inc. Ausgleichmittel zur kupferabscheidung in der mikroelektronik
US20160076160A1 (en) * 2014-09-15 2016-03-17 Enthone Inc. Levelers for copper deposition in microelectronics
US9562300B2 (en) 2014-12-30 2017-02-07 Rohm And Haas Electronic Materials Llc Sulfonamide based polymers for copper electroplating
US9598786B2 (en) 2014-12-30 2017-03-21 Rohm And Haas Electronic Materials Llc Amino sulfonic acid based polymers for copper electroplating
US9611560B2 (en) 2014-12-30 2017-04-04 Rohm And Haas Electronic Materials Llc Sulfonamide based polymers for copper electroplating
US9725816B2 (en) 2014-12-30 2017-08-08 Rohm And Haas Electronic Materials Llc Amino sulfonic acid based polymers for copper electroplating
US9783905B2 (en) 2014-12-30 2017-10-10 Rohm and Haas Electronic Mateirals LLC Reaction products of amino acids and epoxies
US10041182B2 (en) 2014-12-30 2018-08-07 Rohm And Haas Electronic Materials Llc Reaction products of amino acids and epoxies
WO2016169952A1 (en) 2015-04-20 2016-10-27 Atotech Deutschland Gmbh Electrolytic copper plating bath compositions and a method for their use
EP3135709A1 (de) 2015-08-31 2017-03-01 ATOTECH Deutschland GmbH Imidazoylharnstoffpolymere und deren verwendung in metall- oder metalllegierung-galvanisierungsbadzusammensetzungen
WO2017037040A1 (en) 2015-08-31 2017-03-09 Atotech Deutschland Gmbh Aqueous copper plating baths and a method for deposition of copper or copper alloy onto a substrate
EP3360988A1 (de) 2017-02-09 2018-08-15 ATOTECH Deutschland GmbH Pyridiniumverbindungen, ein syntheseverfahren dafür, metall- oder metalllegierungsplattierungsbäder mit besagten pyridiniumverbindungen und verfahren zur verwendung besagter metall- oder metalllegierungsplattierungsbäder
WO2018145919A1 (en) 2017-02-09 2018-08-16 Atotech Deutschland Gmbh Pyridinium compounds, a synthesis method therefor, metal or metal alloy plating baths containing said pyridinium compounds and a method for use of said metal or metal alloy plating baths
EP3508620A1 (de) 2018-01-09 2019-07-10 ATOTECH Deutschland GmbH Ureylenadditiv, dessen verwendung und herstellungsverfahren dafür
WO2019137724A1 (en) 2018-01-09 2019-07-18 Atotech Deutschland Gmbh Ureylene additive, its use and a preparation method therefor
US12004295B2 (en) 2018-01-29 2024-06-04 Corning Incorporated Articles including metallized vias
US11060200B2 (en) 2018-07-27 2021-07-13 Mitsubishi Materials Corporation Tin alloy plating solution
CN112236548A (zh) * 2018-07-27 2021-01-15 三菱综合材料株式会社 锡合金镀液
CN110938848B (zh) * 2019-12-26 2021-05-11 江苏艾森半导体材料股份有限公司 一种用于电解沉积铜的组合物及酸铜电镀液
CN110938848A (zh) * 2019-12-26 2020-03-31 江苏艾森半导体材料股份有限公司 一种用于电解沉积铜的组合物及酸铜电镀液
EP3933073A1 (de) 2020-06-29 2022-01-05 ATOTECH Deutschland GmbH Kupfergalvanisierbad
WO2022002899A1 (en) 2020-06-29 2022-01-06 Atotech Deutschland Gmbh Copper electroplating bath
CN112144083A (zh) * 2020-09-22 2020-12-29 广州三孚新材料科技股份有限公司 一种太阳能电池用无氰镀铜电镀液及制备方法
EP4032930A1 (de) 2021-01-22 2022-07-27 Atotech Deutschland GmbH & Co. KG Biuretbasierte quaternisierte polymere und deren verwendung in metall- oder metalllegierungsbädern
WO2022157292A1 (en) 2021-01-22 2022-07-28 Atotech Deutschland GmbH & Co. KG Biuret-based quaternized polymers and their use in metal or metal alloy plating baths
CN113430598A (zh) * 2021-08-27 2021-09-24 深圳市板明科技股份有限公司 一种线路板盲孔填充电镀铜溶液及其应用
CN113430598B (zh) * 2021-08-27 2021-11-16 深圳市板明科技股份有限公司 一种线路板盲孔填充电镀铜溶液及其应用

Also Published As

Publication number Publication date
JP2001073182A (ja) 2001-03-21
US20040187731A1 (en) 2004-09-30
KR20010015342A (ko) 2001-02-26
EP1069211A3 (de) 2003-12-17

Similar Documents

Publication Publication Date Title
EP1069211A2 (de) Elektroplattierungslösungen
KR102428185B1 (ko) 기판의 표면 상에 대한 금속 또는 금속 합금의 활성화를 포함하는 이의 전착 방법
US5051154A (en) Additive for acid-copper electroplating baths to increase throwing power
JP4342294B2 (ja) 逆パルスめっき組成物および逆パルスメッキ方法
JP4651906B2 (ja) 基体上に金属層を堆積させるためのメッキ浴および方法
US6610192B1 (en) Copper electroplating
US6129830A (en) Process for the electrolytic deposition of copper layers
AU2004239226B2 (en) High purity electrolytic sulfonic acid solutions
US20040045832A1 (en) Electrolytic copper plating solutions
TW201313965A (zh) 銅電鍍方法
EP2518187A1 (de) Wässriges Säurebad zur elektrolytischen Ablagerung von Kupfer
JP2003113491A (ja) 基体上に金属層を堆積させるためのメッキ浴および方法
EP1092790B1 (de) Elektroplattierung von Kupfer aus Alkansulfonatelektrolyten
KR102127642B1 (ko) 아민과 폴리아크릴아미드와 비스에폭시드의 반응 생성물을 함유하는 구리 전기도금욕
JP2006512480A (ja) フェナジニウム化合物オリゴマーの混合物並びに銅析出物を電解析出するための酸性浴
TWI659131B (zh) 含有胺與聚丙烯醯胺之反應產物的化合物的銅電鍍浴
KR102125237B1 (ko) 아민과 퀴논의 반응 생성물의 화합물을 함유하는 구리 전기도금욕
KR102125240B1 (ko) 아민과 폴리아크릴아미드와 설톤의 반응 생성물의 화합물을 함유하는 구리 전기도금욕
KR100711426B1 (ko) 인쇄회로기판 스루홀 도금용 산성 동전해 용액의 조성물
KR20030029004A (ko) 기판상에 금속층을 침착시키기 위한 도금조 및 방법
CS241666B1 (cs) Leskutvorná přísada pro elektrolytické vylučování lesklých niklových povlaků o tloušťkách do 10 uin

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

AX Request for extension of the european patent

Free format text: AL;LT;LV;MK;RO;SI

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

AX Request for extension of the european patent

Extension state: AL LT LV MK RO SI

AKX Designation fees paid
REG Reference to a national code

Ref country code: DE

Ref legal event code: 8566

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20041218