JP5525762B2 - 無電解めっき液及びそれを用いた無電解めっき方法、並びに配線基板の製造方法 - Google Patents
無電解めっき液及びそれを用いた無電解めっき方法、並びに配線基板の製造方法 Download PDFInfo
- Publication number
- JP5525762B2 JP5525762B2 JP2009137130A JP2009137130A JP5525762B2 JP 5525762 B2 JP5525762 B2 JP 5525762B2 JP 2009137130 A JP2009137130 A JP 2009137130A JP 2009137130 A JP2009137130 A JP 2009137130A JP 5525762 B2 JP5525762 B2 JP 5525762B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- plating solution
- acid
- plating
- electroless plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000007772 electroless plating Methods 0.000 title claims description 52
- 238000000034 method Methods 0.000 title description 40
- 238000004519 manufacturing process Methods 0.000 title description 6
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 229910052717 sulfur Inorganic materials 0.000 claims description 30
- 239000011593 sulfur Substances 0.000 claims description 29
- 125000004122 cyclic group Chemical group 0.000 claims description 23
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 22
- 150000002894 organic compounds Chemical class 0.000 claims description 21
- -1 sulfur organic compound Chemical class 0.000 claims description 14
- 125000000217 alkyl group Chemical group 0.000 claims description 13
- 239000003638 chemical reducing agent Substances 0.000 claims description 13
- 239000002253 acid Substances 0.000 claims description 12
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 12
- 150000002815 nickel Chemical class 0.000 claims description 12
- 125000002947 alkylene group Chemical group 0.000 claims description 11
- 239000008139 complexing agent Substances 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 10
- 125000003282 alkyl amino group Chemical group 0.000 claims description 9
- HAXFWIACAGNFHA-UHFFFAOYSA-N aldrithiol Chemical compound C=1C=CC=NC=1SSC1=CC=CC=N1 HAXFWIACAGNFHA-UHFFFAOYSA-N 0.000 claims description 8
- 125000005237 alkyleneamino group Chemical group 0.000 claims description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 6
- 125000003368 amide group Chemical group 0.000 claims description 5
- 125000002560 nitrile group Chemical group 0.000 claims description 5
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 5
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphonic acid group Chemical group P(O)(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 5
- 125000001424 substituent group Chemical group 0.000 claims description 5
- 125000000542 sulfonic acid group Chemical group 0.000 claims description 5
- GSASOFRDSIKDSN-UHFFFAOYSA-N 6-[(5-carboxypyridin-2-yl)disulfanyl]pyridine-3-carboxylic acid Chemical compound N1=CC(C(=O)O)=CC=C1SSC1=CC=C(C(O)=O)C=N1 GSASOFRDSIKDSN-UHFFFAOYSA-N 0.000 claims description 4
- 125000004448 alkyl carbonyl group Chemical group 0.000 claims description 4
- 125000005157 alkyl carboxy group Chemical group 0.000 claims description 4
- 125000003277 amino group Chemical group 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 4
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 4
- 125000004437 phosphorous atom Chemical group 0.000 claims description 4
- 125000000475 sulfinyl group Chemical group [*:2]S([*:1])=O 0.000 claims description 4
- 125000004434 sulfur atom Chemical group 0.000 claims description 4
- 125000002813 thiocarbonyl group Chemical group *C(*)=S 0.000 claims description 4
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 4
- LBEMXJWGHIEXRA-UHFFFAOYSA-N 2-[(2-carboxyphenyl)disulfanyl]benzoic acid Chemical compound OC(=O)C1=CC=CC=C1SSC1=CC=CC=C1C(O)=O LBEMXJWGHIEXRA-UHFFFAOYSA-N 0.000 claims description 3
- AHXGXXJEEHFHDK-UHFFFAOYSA-N 6-[(6-hydroxynaphthalen-2-yl)disulfanyl]naphthalen-2-ol Chemical compound C1=C(O)C=CC2=CC(SSC3=CC4=CC=C(C=C4C=C3)O)=CC=C21 AHXGXXJEEHFHDK-UHFFFAOYSA-N 0.000 claims description 3
- 125000001931 aliphatic group Chemical group 0.000 claims description 3
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 3
- 150000001879 copper Chemical class 0.000 claims description 2
- 238000007747 plating Methods 0.000 description 122
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 59
- 229910052802 copper Inorganic materials 0.000 description 59
- 239000010949 copper Substances 0.000 description 59
- 239000003054 catalyst Substances 0.000 description 32
- 150000003839 salts Chemical class 0.000 description 30
- 230000000052 comparative effect Effects 0.000 description 25
- 230000008569 process Effects 0.000 description 22
- 230000007547 defect Effects 0.000 description 19
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 18
- 239000000758 substrate Substances 0.000 description 17
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 15
- 229910021645 metal ion Inorganic materials 0.000 description 13
- 230000000694 effects Effects 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 9
- 239000000654 additive Substances 0.000 description 9
- 229910000365 copper sulfate Inorganic materials 0.000 description 9
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 230000008021 deposition Effects 0.000 description 7
- 230000000873 masking effect Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- 239000002202 Polyethylene glycol Substances 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 229920001223 polyethylene glycol Polymers 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- HHLFWLYXYJOTON-UHFFFAOYSA-N glyoxylic acid Chemical compound OC(=O)C=O HHLFWLYXYJOTON-UHFFFAOYSA-N 0.000 description 4
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 4
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 229920000768 polyamine Polymers 0.000 description 4
- 238000006722 reduction reaction Methods 0.000 description 4
- 239000003381 stabilizer Substances 0.000 description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229910001431 copper ion Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 2
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 2
- 229930040373 Paraformaldehyde Natural products 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 235000001014 amino acid Nutrition 0.000 description 2
- 150000001413 amino acids Chemical class 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 2
- YPTUAQWMBNZZRN-UHFFFAOYSA-N dimethylaminoboron Chemical compound [B]N(C)C YPTUAQWMBNZZRN-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000004312 hexamethylene tetramine Substances 0.000 description 2
- 235000010299 hexamethylene tetramine Nutrition 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 2
- LSHROXHEILXKHM-UHFFFAOYSA-N n'-[2-[2-[2-(2-aminoethylamino)ethylamino]ethylamino]ethyl]ethane-1,2-diamine Chemical compound NCCNCCNCCNCCNCCN LSHROXHEILXKHM-UHFFFAOYSA-N 0.000 description 2
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 2
- 229920002866 paraformaldehyde Polymers 0.000 description 2
- 229960003330 pentetic acid Drugs 0.000 description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 2
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 2
- 239000001476 sodium potassium tartrate Substances 0.000 description 2
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- CLSLQQCDHOZMDT-UHFFFAOYSA-N (2-Furanylmethyl) methyl disulfide Chemical compound CSSCC1=CC=CO1 CLSLQQCDHOZMDT-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- LFMQNMXVVXHZCC-UHFFFAOYSA-N 1,3-benzothiazol-2-yl n,n-diethylcarbamodithioate Chemical compound C1=CC=C2SC(SC(=S)N(CC)CC)=NC2=C1 LFMQNMXVVXHZCC-UHFFFAOYSA-N 0.000 description 1
- UYLKDZXJEKFFHJ-UHFFFAOYSA-N 2-(furan-2-ylmethylsulfanylmethyl)furan Chemical compound C=1C=COC=1CSCC1=CC=CO1 UYLKDZXJEKFFHJ-UHFFFAOYSA-N 0.000 description 1
- DYCJFJRCWPVDHY-UHFFFAOYSA-N 2-(hydroxymethyl)-5-[6-[(4-nitrophenyl)methylsulfanyl]purin-9-yl]oxolane-3,4-diol Chemical compound OC1C(O)C(CO)OC1N1C2=NC=NC(SCC=3C=CC(=CC=3)[N+]([O-])=O)=C2N=C1 DYCJFJRCWPVDHY-UHFFFAOYSA-N 0.000 description 1
- YYYOQURZQWIILK-UHFFFAOYSA-N 2-[(2-aminophenyl)disulfanyl]aniline Chemical compound NC1=CC=CC=C1SSC1=CC=CC=C1N YYYOQURZQWIILK-UHFFFAOYSA-N 0.000 description 1
- SLAMLWHELXOEJZ-UHFFFAOYSA-N 2-nitrobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1[N+]([O-])=O SLAMLWHELXOEJZ-UHFFFAOYSA-N 0.000 description 1
- PGUPJAPHYIEKLT-UHFFFAOYSA-N 2-pyridin-4-ylsulfanylacetic acid Chemical compound OC(=O)CSC1=CC=NC=C1 PGUPJAPHYIEKLT-UHFFFAOYSA-N 0.000 description 1
- DXSBAOMLHPFLMW-UHFFFAOYSA-N 3-(1,3-benzothiazol-2-ylsulfanyl)propanoic acid Chemical compound C1=CC=C2SC(SCCC(=O)O)=NC2=C1 DXSBAOMLHPFLMW-UHFFFAOYSA-N 0.000 description 1
- XXSPKSHUSWQAIZ-UHFFFAOYSA-L 36026-88-7 Chemical compound [Ni+2].[O-]P=O.[O-]P=O XXSPKSHUSWQAIZ-UHFFFAOYSA-L 0.000 description 1
- CLAPOZGLYFFUHA-UHFFFAOYSA-N 4-[(2-amino-6-methylpyrimidin-4-yl)disulfanyl]-6-methylpyrimidin-2-amine Chemical compound NC1=NC(C)=CC(SSC=2N=C(N)N=C(C)C=2)=N1 CLAPOZGLYFFUHA-UHFFFAOYSA-N 0.000 description 1
- XGJOFCCBFCHEHK-UHFFFAOYSA-N 4-pyridin-4-ylsulfanylpyridine Chemical compound C=1C=NC=CC=1SC1=CC=NC=C1 XGJOFCCBFCHEHK-UHFFFAOYSA-N 0.000 description 1
- DWMJRSPNFCPIQN-UHFFFAOYSA-N 5-(3-carboxy-4-hydroxyphenyl)sulfanyl-2-hydroxybenzoic acid Chemical compound C1=C(O)C(C(=O)O)=CC(SC=2C=C(C(O)=CC=2)C(O)=O)=C1 DWMJRSPNFCPIQN-UHFFFAOYSA-N 0.000 description 1
- IPIOEZKHDKHTNT-UHFFFAOYSA-N 5-[(3-carboxy-4-hydroxyphenyl)disulfanyl]-2-hydroxybenzoic acid Chemical compound C1=C(O)C(C(=O)O)=CC(SSC=2C=C(C(O)=CC=2)C(O)=O)=C1 IPIOEZKHDKHTNT-UHFFFAOYSA-N 0.000 description 1
- ROUFCTKIILEETD-UHFFFAOYSA-N 5-nitro-2-[(5-nitropyridin-2-yl)disulfanyl]pyridine Chemical compound N1=CC([N+](=O)[O-])=CC=C1SSC1=CC=C([N+]([O-])=O)C=N1 ROUFCTKIILEETD-UHFFFAOYSA-N 0.000 description 1
- OXIAMGMNWRAVCO-UHFFFAOYSA-N 6-[(6-carboxy-1-hydroxycyclohexa-2,4-dien-1-yl)disulfanyl]-6-hydroxycyclohexa-2,4-diene-1-carboxylic acid Chemical compound OC(=O)C1C=CC=CC1(O)SSC1(O)C(C(O)=O)C=CC=C1 OXIAMGMNWRAVCO-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 1
- JJHHIJFTHRNPIK-UHFFFAOYSA-N Diphenyl sulfoxide Chemical compound C=1C=CC=CC=1S(=O)C1=CC=CC=C1 JJHHIJFTHRNPIK-UHFFFAOYSA-N 0.000 description 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- MFXUBPQFOGXAQJ-UHFFFAOYSA-N OC=1C=C(C=CC1)SSC1=CC(=CC=C1)O.C(C1=CC=CC=C1)(=O)NC1=C(C=CC=C1)SSC1=C(C=CC=C1)NC(C1=CC=CC=C1)=O Chemical compound OC=1C=C(C=CC1)SSC1=CC(=CC=C1)O.C(C1=CC=CC=C1)(=O)NC1=C(C=CC=C1)SSC1=C(C=CC=C1)NC(C1=CC=CC=C1)=O MFXUBPQFOGXAQJ-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- WLVHZZYNSMMNGK-UHFFFAOYSA-N [Na].[Na].[Na].CC(O)=O.CC(O)=O.CC(O)=O.NCCNCCO Chemical compound [Na].[Na].[Na].CC(O)=O.CC(O)=O.CC(O)=O.NCCNCCO WLVHZZYNSMMNGK-UHFFFAOYSA-N 0.000 description 1
- FKKUMFTYSTZUJG-UHFFFAOYSA-N acediasulfone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(NCC(O)=O)C=C1 FKKUMFTYSTZUJG-UHFFFAOYSA-N 0.000 description 1
- 229950010964 acediasulfone Drugs 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 125000001164 benzothiazolyl group Chemical group S1C(=NC2=C1C=CC=C2)* 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- AFZSMODLJJCVPP-UHFFFAOYSA-N dibenzothiazol-2-yl disulfide Chemical compound C1=CC=C2SC(SSC=3SC4=CC=CC=C4N=3)=NC2=C1 AFZSMODLJJCVPP-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 125000006575 electron-withdrawing group Chemical group 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 125000002425 furfuryl group Chemical group C(C1=CC=CO1)* 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- 125000002883 imidazolyl group Chemical group 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- MGNVWUDMMXZUDI-UHFFFAOYSA-N propane-1,3-disulfonic acid Chemical compound OS(=O)(=O)CCCS(O)(=O)=O MGNVWUDMMXZUDI-UHFFFAOYSA-N 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 125000001174 sulfone group Chemical group 0.000 description 1
- 150000003463 sulfur Chemical class 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- UEUXEKPTXMALOB-UHFFFAOYSA-J tetrasodium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O UEUXEKPTXMALOB-UHFFFAOYSA-J 0.000 description 1
- XFLNVMPCPRLYBE-UHFFFAOYSA-J tetrasodium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate;tetrahydrate Chemical compound O.O.O.O.[Na+].[Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O XFLNVMPCPRLYBE-UHFFFAOYSA-J 0.000 description 1
- 125000000335 thiazolyl group Chemical group 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
- C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
- C23C18/405—Formaldehyde
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/422—Plated through-holes or plated via connections characterised by electroless plating method; pretreatment therefor
Description
R1−(S)n−R2 (I)
R1−L1−(S)n−R2 (II)
R1−L1−(S)n−L2−R2 (III)
R1−(S)n−L3 (IV)
R1−L1−(S)n−L3 (V)
なお、上記一般式(I)乃至(V)中、nは、1以上の整数、
R1、R2は、それぞれ独立に炭素原子、酸素原子、リン原子、硫黄原子、窒素原子をそれぞれ任意の数含む脂肪族環状基または芳香族環状基、または該環状基に任意の1種類以上の置換基が1つ以上結合した環状基、
L1、L2は、それぞれ独立に直鎖または分岐したアルキル鎖、アルキルアミノ鎖、アルキレン鎖、アルコキシ鎖からなる群の何れか1つであり、
L3は、アルキル基、アルキレン基、アミノ基、アルキルアミノ基、アルキレンアミノ基、ヒドロキシル基、アルキルヒドロキシル基、アルキレンヒドロキシル基、カルボキシル基、アルキルカルボキシル基、アルキレンカルボキシル基、アルキルアミノカルボキシル基、アルキレンアミノカルボキシル基、ニトロ基、アルキルニトロ基、ニトリル基、アルキルニトリル基、アミド基、アルキルアミド基、カルボニル基、アルキルカルボニル基、スルホン酸基、アルキルスルホン酸基、ホスホン酸基、アルキルホスホン酸基、スルファニル基、スルフィニル基、チオカルボニル基からなる群の何れか1つである。
R1−(S)n−R2 (I)
R1−L1−(S)n−R2 (II)
R1−L1−(S)n−L2−R2 (III)
R1−(S)n−L3 (IV)
R1−L1−(S)n−L3 (V)
[一般式(I)乃至(V)中において、nは、1以上の整数であり、R1、R2は、それぞれ独立に炭素原子、酸素原子、リン原子、硫黄原子、窒素原子をそれぞれ任意の数含む脂肪族環状基または芳香族環状基、または該環状基に任意の1種類以上の置換基が1つ以上結合した環状基であり、L1、L2は、それぞれ独立に直鎖または分岐したアルキル鎖、アルキルアミノ鎖、アルキレン鎖、アルコキシ鎖からなる群の何れか1つであり、L3は、アルキル基、アルキレン基、アミノ基、アルキルアミノ基、アルキレンアミノ基、ヒドロキシル基、アルキルヒドロキシル基、アルキレンヒドロキシル基、カルボキシル基、アルキルカルボキシル基、アルキレンカルボキシル基、アルキルアミノカルボキシル基、アルキレンアミノカルボキシル基、ニトロ基、アルキルニトロ基、ニトリル基、アルキルニトリル基、アミド基、アルキルアミド基、カルボニル基、アルキルカルボニル基、スルホン酸基、アルキルスルホン酸基、ホスホン酸基、アルキルホスホン酸基、スルファニル基、スルフィニル基、チオカルボニル基からなる群の何れか1つである。]。
一般的な絶縁樹脂(味の素ファインテクノ株式会社製ABF-GX13)を積層した基板にビアホール形成に用いるレーザー加工機(日立ビアメカニクス株式会社製)を使用して幅20μm、深さ13μmのトレンチ(回路)を形成した。
硫酸銅:0.04mol/L
EDTA:0.1mol/L
水酸化ナトリウム:4g/L
ホルムアルデヒド:4g/L
2,2’−ビピリジル:2mg/L
ポリエチレングリコール(分子量1000):1000mg/L
2,2’−ジピリジルジスルフィド:5mg/L
(実施例2)
実施例1と同様に一般的な絶縁樹脂(味の素ファインテクノ株式会社製ABF-GX13)を積層した基板にマスキングテープ(住友スリーエム株式会社製851T)を貼った後、ビアホール形成に用いるレーザー加工機(日立ビアメカニクス株式会社製)を使用してマスキングテープごと加工し、絶縁樹脂に幅10μm、深さ16μmのトレンチ(回路)を形成した。
硫酸銅:0.04mol/L
HEDTA:0.1mol/L
水酸化ナトリウム:4g/L
ホルムアルデヒド:4g/L
2,2’−ビピリジル:2mg/L
ポリエチレングリコール(分子量1000):1000mg/L
6,6’−ジチオジニコチン酸:5mg/L
(比較例1)
実施例1と同様に一般的な絶縁樹脂(味の素ファインテクノ株式会社製ABF-GX13)を積層した基板にビアホール形成に用いるレーザー加工機(日立ビアメカニクス株式会社製)を使用して幅20μm、深さ13μmのトレンチ(回路)を形成した。
実施例1と同様に一般的な絶縁樹脂(味の素ファインテクノ株式会社製ABF-GX13)を積層した基板にビアホール形成に用いるレーザー加工機(日立ビアメカニクス株式会社製)を使用して幅20μm、深さ13μmのトレンチ(回路)を形成した。
硫酸銅:0.04mol/L
EDTA:0.1mol/L
水酸化ナトリウム:4g/L
ホルムアルデヒド:4g/L
2,2’−ビピリジル:2mg/L
ポリエチレングリコール(分子量1000):1000mg/L
スルフォプロピルスルフォネート:0.5mg/L
(比較例3)
実施例2と同じく一般的な絶縁樹脂(味の素ファインテクノ株式会社製ABF-GX13)を積層した基板にマスキングテープ(住友スリーエム株式会社製851T)を貼った後、ビアホール形成に用いるレーザー加工機(日立ビアメカニクス株式会社製)を使用してマスキングテープごと加工し、絶縁樹脂に幅10μm、深さ16μmのトレンチ(回路)を形成した。
実施例1と同様に一般的な絶縁樹脂(味の素ファインテクノ株式会社製ABF-GX13)を積層した基板にビアホール形成に用いるレーザー加工機(日立ビアメカニクス株式会社製)を使用して幅20μm、深さ13μmのトレンチ(回路)を形成した。
硫酸銅:0.04mol/L
EDTA:0.1mol/L
水酸化ナトリウム:4g/L
ホルムアルデヒド:4g/L
2,2’−ビピリジル:2mg/L
ポリエチレングリコール(分子量1000):1000mg/L
アセジアスルホン:1000mg/L
(比較例5)
実施例1と同様に一般的な絶縁樹脂(味の素ファインテクノ株式会社製ABF-GX13)を積層した基板にビアホール形成に用いるレーザー加工機(日立ビアメカニクス株式会社製)を使用して幅20μm、深さ13μmのトレンチ(回路)を形成した。
硫酸銅:0.04mol/L
EDTA:0.1mol/L
水酸化ナトリウム:4g/L
ホルムアルデヒド:4g/L
2,2’−ビピリジル:2mg/L
ポリエチレングリコール(分子量1000):1000mg/L
ジフェニルスルホキシド:100mg/L
(実験結果)
下記の表1は、各実施例及び各比較例それぞれの実験結果、すなわちボイドまたはシームの発生の有無、銅めっきの埋まり性についての評価結果を示すものである。なお、断面観察においては、顕微鏡(LEICA社製 DMI3000M)を用いて測定した。
Claims (2)
- プリント配線基板に形成されたトレンチ又はビアホールに金属を埋め込むための無電解めっき液であって、
少なくとも、水溶性銅塩又は水溶性ニッケル塩と、還元剤と、錯化剤とを含有するとともに、下記一般式(I)乃至(V)の何れかで表される少なくとも1種の硫黄系有機化合物からなるレベラーを含有し、該硫黄系有機化合物の含有量が0.05mg/L〜50mg/Lである無電解めっき液。
R1−(S)n−R2 (I)
R1−L1−(S)n−R2 (II)
R1−L1−(S)n−L2−R2 (III)
R1−(S)n−L3 (IV)
R1−L1−(S)n−L3 (V)
[一般式(I)乃至(V)中、nは、1以上の整数、
R1、R2は、それぞれ独立に炭素原子、酸素原子、リン原子、硫黄原子、窒素原子をそれぞれ任意の数含む脂肪族環状基または芳香族環状基、または該環状基に任意の1種類以上の置換基が1つ以上結合した環状基、
L1、L2は、それぞれ独立に直鎖または分岐したアルキル鎖、アルキルアミノ鎖、アルキレン鎖、アルコキシ鎖からなる群の何れか1つであり、
L3は、アルキル基、アルキレン基、アミノ基、アルキルアミノ基、アルキレンアミノ基、ヒドロキシル基、アルキルヒドロキシル基、アルキレンヒドロキシル基、カルボキシル基、アルキルカルボキシル基、アルキレンカルボキシル基、アルキルアミノカルボキシル基、アルキレンアミノカルボキシル基、ニトロ基、アルキルニトロ基、ニトリル基、アルキルニトリル基、アミド基、アルキルアミド基、カルボニル基、アルキルカルボニル基、スルホン酸基、アルキルスルホン酸基、ホスホン酸基、アルキルホスホン酸基、スルファニル基、スルフィニル基、チオカルボニル基からなる群の何れか1つである。] - 上記硫黄有機化合物は、2,2’−ジピリジルジスルフィド、6,6’−ジチオジニコチン酸、2,2’−ジチオジ安息香酸、ビス(6−ヒドロキシ−2−ナフチル)ジスルフィドからなる群から選択される請求項1記載の無電解めっき液。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009137130A JP5525762B2 (ja) | 2008-07-01 | 2009-06-08 | 無電解めっき液及びそれを用いた無電解めっき方法、並びに配線基板の製造方法 |
TW98121214A TWI471455B (zh) | 2008-07-01 | 2009-06-24 | 無電解鍍液及使用其之無電解鍍方法及配線基板的製造方法 |
US12/491,920 US8137447B2 (en) | 2008-07-01 | 2009-06-25 | Electroless plating solution, method for electroless plating using the same and method for manufacturing circuit board |
CN200910166945.XA CN101671820B (zh) | 2008-07-01 | 2009-06-30 | 无电解镀液、使用其的无电解镀方法及线路板的制造方法 |
KR1020090059701A KR101590031B1 (ko) | 2008-07-01 | 2009-07-01 | 무전해 도금액, 이것을 사용한 무전해 도금 방법, 및 배선 기판의 제조 방법 |
US13/296,173 US8197583B2 (en) | 2008-07-01 | 2011-11-14 | Electroless plating solution, method for electroless plating using the same and method for manufacturing circuit board |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008172657 | 2008-07-01 | ||
JP2008172657 | 2008-07-01 | ||
JP2009137130A JP5525762B2 (ja) | 2008-07-01 | 2009-06-08 | 無電解めっき液及びそれを用いた無電解めっき方法、並びに配線基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010031361A JP2010031361A (ja) | 2010-02-12 |
JP5525762B2 true JP5525762B2 (ja) | 2014-06-18 |
Family
ID=41464588
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009137130A Active JP5525762B2 (ja) | 2008-07-01 | 2009-06-08 | 無電解めっき液及びそれを用いた無電解めっき方法、並びに配線基板の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8137447B2 (ja) |
JP (1) | JP5525762B2 (ja) |
KR (1) | KR101590031B1 (ja) |
CN (1) | CN101671820B (ja) |
TW (1) | TWI471455B (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5525762B2 (ja) * | 2008-07-01 | 2014-06-18 | 上村工業株式会社 | 無電解めっき液及びそれを用いた無電解めっき方法、並びに配線基板の製造方法 |
EP2628824B1 (en) * | 2012-02-16 | 2014-09-17 | Atotech Deutschland GmbH | Method for electroless nickel-phosphorous alloy deposition onto flexible substrates |
JP5890236B2 (ja) * | 2012-04-10 | 2016-03-22 | 東洋鋼鈑株式会社 | ハードディスク用基板の製造方法 |
JP5952093B2 (ja) * | 2012-05-31 | 2016-07-13 | ローム・アンド・ハース電子材料株式会社 | 電解銅めっき液及び電解銅めっき方法 |
WO2014098064A1 (ja) | 2012-12-21 | 2014-06-26 | 奥野製薬工業株式会社 | 導電性皮膜形成浴 |
JP6024044B2 (ja) * | 2014-01-27 | 2016-11-09 | 奥野製薬工業株式会社 | 導電性皮膜形成浴 |
KR102264033B1 (ko) * | 2014-02-21 | 2021-06-11 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 무전해 도금액을 이용한 관통전극의 형성방법 |
WO2015183304A1 (en) | 2014-05-30 | 2015-12-03 | Uab Rekin International | Chrome-free adhesion pre-treatment for plastics |
JP5997741B2 (ja) * | 2014-09-17 | 2016-09-28 | 上村工業株式会社 | 配線基板の製造方法およびその方法により製造された配線基板 |
DE102014222834A1 (de) * | 2014-11-10 | 2016-05-12 | Henkel Ag & Co. Kgaa | Wasch- und Reinigungsmittel mit verbesserter Leistung |
US20160145745A1 (en) * | 2014-11-24 | 2016-05-26 | Rohm And Haas Electronic Materials Llc | Formaldehyde-free electroless metal plating compositions and methods |
JP6594694B2 (ja) * | 2015-07-28 | 2019-10-23 | 上村工業株式会社 | 無電解ニッケルめっき浴 |
JP6706095B2 (ja) * | 2016-03-01 | 2020-06-03 | 株式会社荏原製作所 | 無電解めっき装置および無電解めっき方法 |
TW201816183A (zh) * | 2016-10-14 | 2018-05-01 | 日商上村工業股份有限公司 | 無電解鍍鎳浴 |
CN110669568A (zh) * | 2018-07-03 | 2020-01-10 | 中国石油化工股份有限公司 | 一种闭门器油组合物 |
CN109280907A (zh) * | 2018-09-29 | 2019-01-29 | 世程新材料科技(武汉)有限公司 | 超细线镀镍液、镀镍工艺、镀镍层及印制电路板 |
CN109972180B (zh) * | 2019-04-12 | 2020-12-18 | 博敏电子股份有限公司 | 2,2'-二硫代二吡啶的新用途及采用其的电镀填孔添加剂及采用该添加剂的电镀方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL291575A (ja) * | 1962-04-16 | |||
US3515563A (en) * | 1967-12-28 | 1970-06-02 | Photocircuits Corp | Autocatalytic metal plating solutions |
US3716462A (en) * | 1970-10-05 | 1973-02-13 | D Jensen | Copper plating on zinc and its alloys |
US3770598A (en) * | 1972-01-21 | 1973-11-06 | Oxy Metal Finishing Corp | Electrodeposition of copper from acid baths |
US3915718A (en) * | 1972-10-04 | 1975-10-28 | Schering Ag | Chemical silver bath |
DE3790128T (ja) * | 1986-03-04 | 1988-03-31 | ||
JPS6324072A (ja) * | 1986-03-04 | 1988-02-01 | Ishihara Yakuhin Kk | 無電解パラジウム−ニツケル合金メツキ液 |
JPH01268877A (ja) * | 1988-04-18 | 1989-10-26 | Ishihara Chem Co Ltd | 無電解パラジウムメッキ液 |
US5910340A (en) * | 1995-10-23 | 1999-06-08 | C. Uyemura & Co., Ltd. | Electroless nickel plating solution and method |
JP3972158B2 (ja) * | 1998-03-24 | 2007-09-05 | 石原薬品株式会社 | 無電解パラジウムメッキ液 |
JP3816241B2 (ja) * | 1998-07-14 | 2006-08-30 | 株式会社大和化成研究所 | 金属を還元析出させるための水溶液 |
KR100656581B1 (ko) * | 1998-09-03 | 2006-12-12 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판의 도금방법 및 장치 |
JP4186030B2 (ja) * | 1999-03-16 | 2008-11-26 | 石原薬品株式会社 | 無電解スズ−銀合金メッキ浴及び当該メッキ浴でスズ−銀合金皮膜を施したtabのフィルムキャリア等 |
JP2001073182A (ja) * | 1999-07-15 | 2001-03-21 | Boc Group Inc:The | 改良された酸性銅電気メッキ用溶液 |
US6776893B1 (en) * | 2000-11-20 | 2004-08-17 | Enthone Inc. | Electroplating chemistry for the CU filling of submicron features of VLSI/ULSI interconnect |
US6863795B2 (en) * | 2001-03-23 | 2005-03-08 | Interuniversitair Microelektronica Centrum (Imec) | Multi-step method for metal deposition |
US6736954B2 (en) * | 2001-10-02 | 2004-05-18 | Shipley Company, L.L.C. | Plating bath and method for depositing a metal layer on a substrate |
JP2004010964A (ja) * | 2002-06-06 | 2004-01-15 | Hitachi Chem Co Ltd | 無電解金めっき液及び無電解金めっき方法 |
JP4973829B2 (ja) * | 2004-07-23 | 2012-07-11 | 上村工業株式会社 | 電気銅めっき浴及び電気銅めっき方法 |
JP4618488B2 (ja) * | 2004-10-01 | 2011-01-26 | 石原薬品株式会社 | 無電解スズメッキ方法 |
US7651934B2 (en) * | 2005-03-18 | 2010-01-26 | Applied Materials, Inc. | Process for electroless copper deposition |
TWI328622B (en) * | 2005-09-30 | 2010-08-11 | Rohm & Haas Elect Mat | Leveler compounds |
US7220296B1 (en) * | 2005-12-15 | 2007-05-22 | Intel Corporation | Electroless plating baths for high aspect features |
JP5525762B2 (ja) * | 2008-07-01 | 2014-06-18 | 上村工業株式会社 | 無電解めっき液及びそれを用いた無電解めっき方法、並びに配線基板の製造方法 |
-
2009
- 2009-06-08 JP JP2009137130A patent/JP5525762B2/ja active Active
- 2009-06-24 TW TW98121214A patent/TWI471455B/zh active
- 2009-06-25 US US12/491,920 patent/US8137447B2/en active Active
- 2009-06-30 CN CN200910166945.XA patent/CN101671820B/zh active Active
- 2009-07-01 KR KR1020090059701A patent/KR101590031B1/ko active IP Right Grant
-
2011
- 2011-11-14 US US13/296,173 patent/US8197583B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI471455B (zh) | 2015-02-01 |
TW201012966A (en) | 2010-04-01 |
CN101671820B (zh) | 2014-06-25 |
KR101590031B1 (ko) | 2016-01-29 |
CN101671820A (zh) | 2010-03-17 |
US20120058254A1 (en) | 2012-03-08 |
US8197583B2 (en) | 2012-06-12 |
JP2010031361A (ja) | 2010-02-12 |
KR20100003712A (ko) | 2010-01-11 |
US8137447B2 (en) | 2012-03-20 |
US20100003399A1 (en) | 2010-01-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5525762B2 (ja) | 無電解めっき液及びそれを用いた無電解めっき方法、並びに配線基板の製造方法 | |
JP4932094B2 (ja) | 無電解金めっき液および無電解金めっき方法 | |
JP4116718B2 (ja) | 無電解金めっき方法及びそれに使用する無電解金めっき液 | |
JP6138892B2 (ja) | ホルムアルデヒド不含無電解金属メッキ組成物及び方法 | |
KR20110028252A (ko) | 환원형 무전해 주석 도금액 및 그것을 사용한 주석 피막 | |
US20030155247A1 (en) | Process for electroplating silicon wafers | |
KR102315943B1 (ko) | 금 함유 층 전착용 조성물, 이의 용도 및 방법 | |
WO2016042754A1 (ja) | 配線基板の製造方法およびその方法により製造された配線基板 | |
JP2018024916A (ja) | 還元処理と同時に用いられる無電解めっき用前処理液、およびプリント配線基板の製造方法 | |
JP2007009305A (ja) | 無電解パラジウムめっき液及びそれを用いて形成された3層めっき被膜端子 | |
JP4660800B2 (ja) | 無電解金メッキ浴 | |
TWI804539B (zh) | 無電鍍金鍍浴 | |
JP2009242860A (ja) | 酸性銅用前処理剤およびこれを利用するめっき方法 | |
JP2002356783A (ja) | 無電解銀メッキ浴 | |
JP5216372B2 (ja) | 無電解錫めっき浴及び無電解錫めっき方法 | |
JP2007246955A (ja) | 無電解金めっき浴 | |
JP2003293189A (ja) | 硫酸銅めっき方法 | |
KR20210018457A (ko) | 무전해 구리 또는 구리 합금 도금조 및 도금 방법 | |
JP5066691B2 (ja) | 無電解金めっき浴を安定化させる方法 | |
JP2000017448A (ja) | 無電解金めっき液及び無電解金めっき方法 | |
JP2013144835A (ja) | 無電解Ni−P−Snめっき液 | |
JP2004052014A (ja) | イリジウムめっき液及びめっき方法 | |
JP2004217988A (ja) | 無電解金めっき浴 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120525 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130513 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130521 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130722 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140401 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140414 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5525762 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |