EP0598763B1 - Bain acide de depot galvanique de cuivre et son utilisation - Google Patents

Bain acide de depot galvanique de cuivre et son utilisation Download PDF

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Publication number
EP0598763B1
EP0598763B1 EP92916259A EP92916259A EP0598763B1 EP 0598763 B1 EP0598763 B1 EP 0598763B1 EP 92916259 A EP92916259 A EP 92916259A EP 92916259 A EP92916259 A EP 92916259A EP 0598763 B1 EP0598763 B1 EP 0598763B1
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EP
European Patent Office
Prior art keywords
aqueous
bath according
phenazonium
poly
acidic bath
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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EP92916259A
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German (de)
English (en)
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EP0598763A1 (fr
Inventor
Wolfgang Dahms
Horst Westphal
Michael Jonat
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Atotech Deutschland GmbH and Co KG
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Atotech Deutschland GmbH and Co KG
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper

Definitions

  • the invention relates to an acid bath for the electrodeposition of shiny, ductile and leveled copper coatings and the use of this combination.
  • the bath according to the invention can be used both to reinforce the conductor tracks of printed circuits and in the decorative sector.
  • the prior art includes baths which contain a mixture of oxygen-containing high-molecular compounds with organic, in particular aromatic thio compounds (DE-AS 1521062). However, these show unimportant results with regard to metal scattering and / or leveling.
  • DE-AS 2039831 describes an acidic copper bath which, in addition to a polymeric oxygen-containing compound and a thio compound with a water-soluble group, also contains at least one dye from the series of polymeric phenazonium compounds in solution. Further work describes the combination of organic thio compounds and polymeric oxygen-containing compounds with other dyes such as crystal violet (EP-PS 071512) or phthalocyanine derivatives with aposafranine (DE-PS 3420999) or a combination with amides (DE-PS 2746938) .
  • a disadvantage when using conventional oxygen-containing high molecular weight Connections is the stability in the electrolyte. With normal use, these compounds decompose slowly during the electrolysis to water-insoluble polymers, which accumulate more and more in the electrolyte, frame them as jellies on the walls and finally deposit on the goods themselves, so that the goods become damaged and thus unusable. This decomposition is extremely increased when the bath temperature rises above 28 ° C.
  • the object of this invention is to avoid these disadvantages.
  • the amount in which the polyalkylene glycol dialkyl ether can be added in order to achieve a significant improvement in the copper deposition is approximately 0.005 to 30 g / liter; preferably 0.02 to 8.0 g / liter.
  • the relative molar mass can be between 500 and 35,000 g / mol; preferably 800 to 4000 g / mol.
  • polyalkylene glycol dialkyl ethers are known per se or can be prepared by processes known per se by reacting polyalkylene glycols with an alkylating agent, e.g. Dimethyl sulfate or tert. Butene are made.
  • an alkylating agent e.g. Dimethyl sulfate or tert. Butene are made.
  • Table 1 shows examples of the polyalkylene glycol dialkyl ethers to be used according to the invention and their preferred use concentration listed: Table 1 Polyalkylene glycol dialkyl ether preferred concentration g / liter Dimethyl polyethylene glycol ether 0.1 - 5.0 Dimethyl polypropylene glycol ether 0.05-1.0 Di-tert-butyl polyethylene glycol ether 0.1 - 2.0 Stearly monomethyl polyethylene glycol ether 0.5 - 8.0 Nonylphenyl monomethyl polyethylene glycol ether 0.5 - 6.0 Polyethylene-polypropylene-dimethyl ether (mixed or block polymer) 0.02 - 5.0 Octyl monomethyl polyalkylene ether (copolymer or block polymer) 0.05-0.5 Dimethyl-bis (polyalkylene glycol) octylene ether (mixed or block polymer) 0.02 - 0.5 ⁇ -naphthol monomethyl polyethylene glycol ether 0.03 - 4.0
  • At least one thio compound having a water-solubilizing group can be added to the compound according to the invention in order to obtain a shiny precipitate.
  • Other additives such as nitrogen-containing thio compounds, polymeric nitrogen compounds and / or polymeric phenazonium compounds can also be added to the bath.
  • Table 2 lists some common thio compounds with water-soluble groups and their preferred use concentration: Table 2 Thio compounds preferred concentration g / liter 3-mercaptopropan-1-sulfonic acid, sodium salt 0.002 - 0.1 Thiophosphoric acid-O-ethyl-bis- ( ⁇ -sulfopropyl) ester, disodium salt 0.01-0.15 Thiophosphoric acid tris ( ⁇ -sulfopropyl) ester, trisodium salt 0.02-0.15 Thioglycolic acid 0.001 - 0.005 Ethylene dithiodipropyl sulfonic acid, sodium salt 0.001 - 0.1 Bis- ( ⁇ -sulfopropyl) disulfide, disodium salt 0.001 - 0.05 Bis ( ⁇ -sulfopropyl) sulfide, disodium salt 0.01-0.15 O-ethyl-dithiocarbonic acid S- ( ⁇ -sulfopropyl) ester,
  • Table 3 contains examples of nitrogen-containing thio compounds (so-called thiourea derivatives) and Table 4 for polymeric phenazonium compounds and Table 5 for polymeric nitrogen compounds.
  • the basic composition of the bath according to the invention can vary within wide limits.
  • An aqueous solution of the following composition is generally used: Copper sulfate (CuSO4 ⁇ 5H2O) preferably 20 - 250 g / liter 60 - 80 g / liter or 180 - 220 g / liter
  • chloride ions 0.01 - 0.18 g / liter, 0.03-0.10 g / liter
  • copper sulfate instead of copper sulfate, other copper salts can also be used, at least in part.
  • Some or all of the sulfuric acid can be replaced by fluoroboric acid, methanesulfonic acid or other acids.
  • the chloride ions are added as alkali chloride (eg sodium chloride) or in the form of hydrochloric acid pa. The addition of sodium chloride can be omitted in whole or in part if the additives already contain halogen ions.
  • customary brighteners, levelers or wetting agents can also be present in the bathroom.
  • the working conditions of the bath are as follows: PH value: ⁇ 1 Temperature: 15 ° C - 50 ° C, preferably 25 ° C - 40 ° C cath. Current density: 0.5 - 12 A / dm2, preferably 2-7 A / dm2
  • the electrolyte movement takes place by blowing clean air in, so strongly that the electrolyte surface is in a strong flush.
  • Copper with a content of 0.02 to 0.067% phosphorus is used as the anode.
  • electrolyte temperature 30 ° C with a current density of 4 A / dm2 and movement by blowing in air, a well-leveled shiny copper coating is obtained.
  • the electrolyte at the tub edge shows clear gelatinous polymer framing.
  • the compound according to the invention polyethylene glycol dimethyl ether
  • the electrolyte shows no polymer framing after aging.
  • the electrolyte at the tub edge shows clear gelatinous polymer framing.
  • the compound according to the invention polypropylene glycol dimethyl ether
  • the electrolyte shows no polymer framing after aging.
  • the electrolyte at the tub edge shows clear gelatinous polymer framing.
  • the electrolyte shows no polymer framing after aging.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Chemically Coating (AREA)

Claims (18)

  1. Bain aqueux acide pour le dépôt galvanique de revêtements de cuivre brillants et lisses, contenant de l'éther dialkylique de polyalkylèneglycol, de la formule générale :
    Figure imgb0007
        dans laquelle n = 8 - 800, m = 0 - 50, R¹ est un alcoyle inférieur C₁ à C₄, R² est une chaîne aliphatique ou un résidu aromatique et a = 1 ou 2.
  2. Bain acide aqueux selon la revendication 1, caractérisé en ce qu'il contient de l'éther dialkylique de polyalkylène-glycol ou des mélanges de celui-ci à des concentrations de 0,005 à 30 g/litre.
  3. Bain acide aqueux selon les revendications 1 et 2, caractérisé en ce qu'il contient
       de l'éther diméthylique de polyéthylène-glycol
       de l'éther di-tert.-butylique de polyéthylène-glycol
       de l'éther stéaryl-monométhylique de polyéthylène-glycol
       de l'éther nonylphényl-monométhylique de polyéthylène-glycol
       de l'éther diméthylique de polyéthylène-polypropylène-glycol
       de l'éther octylique de monométhyl-polyalkylène
       de l'éther octylique de diméthyl-bis(polyalkylène-glycol) et/ou
       de l'éther β-naphtol-monométhylique de polyéthylène-glycol.
  4. Bain acide aqueux selon les revendications 1 à 3, caractérisé en ce qu'il contient en outre un composé thio ou un mélange de plusieurs composés thio.
  5. Bain acide aqueux selon la revendication 4, caractérisé en ce qu'il contient
       de l'acide 3-mercaptopropano-1-sulfonique, sel sodique
       de l'ester O-éthyl-bis-(ω-sulfopropylique) d'acide thiophosphorique, sel disodique
       de l'ester tris-(ω-sulfopropylique) d'acide thiophosphorique, sel trisodique,
       de l'acide éthylènedithiodipropylsulfonique, sel sodique
       du disulfure de bis-(ω-sulfopropyle), sel disodique
       du sulfure de bis-(ω-sulfopropyle), sel disodique
       de l'ester S-(ω-sulfopropylique) d'acide O-éthyl-dithiocarbonique, sel potassique
       de l'acide 3(benzothiazolyl-2-thio)-propylsulfonique, sel sodique
       du disulfure de bis-(ω-sulfohydroxypropyle), sel disodique
       du disulfure de bis-(ω-sulfobutyle), sel disodique
       du disulfure de bis-(p-sulfophényle), sel disodique
       du disulfure de méthyl-(ω-sulfopropyle), sel disodique et/ou
       du trisulfure de méthyl-(ω-sulfopropyle), sel disodique.
  6. Bain acide aqueux selon les revendications 4 et 5, caractérisé en ce qu'il contient des composés thio à des concentrations de 0,0005 à 0,4 g/litre.
  7. Bain acide aqueux selon les revendications 1 à 6, caractérisé en ce qu'il contient en outre un certain taux d'au moins un composé de phénazonium polymère.
  8. Bain acide aqueux selon la revendication 7, caractérisé en ce qu'il contient
       du polysulfate de 6-méthyl-7-diméthylamino-5-phénylphénazonium
       du polychlorure de 2-méthyl-7-diéthylamino-5-phénylphénazonium
       du polysulfate de 2-méthyl-7-diméthylamino-5-phénylphénazonium
       du polyacétate de 5-méthyl-7-diméthylamino-phénazonium
       du polysulfate de 2-méthyl-7-anilino-5-phényl-phénazonium
       du polysulfate de 2-méthyl-7-diméthylamino-phénazonium
       du polyacétate de 7-méthylamino-5-phényl-phénazonium
       du polychlorure de 7-éthylamino-2,5-diphényl-phénazonium
       du polychlorure de 2,8-diméthyl-7-diéthylamino-5-p-tolyl-phénazonium
       du polysulfate de 2,5,8-triphényl-7-diméthylamino-phénazonium
       du polysulfate de 2,8-diméthyl-7-amino-5-phényl-phénazonium
       et/ou
       du polychlorure de 7-diméthylamino-5-phényl-phénazonium
  9. Bain acide aqueux selon les revendications 7 et 8, caractérisé en ce qu'il contient des composés de phénazonium polymères à des concentrations de 0,0001 à 0,5 g/litre.
  10. Bain acide aqueux selon les revendications 1 à 6, caractérisé en ce qu'il contient en outre un certain taux d'au moins un dérivé de thio-urée.
  11. Bain acide aqueux selon la revendication 10, caractérisé en ce qu'il contient
       de la N-acétylthio-urée
       de la N-trifluoroacétylthio-urée
       de la N-éthylthio-urée
       de la N-cyanoacétylthio-urée
       de la N-allylthio-urée
       de l'O-tolylthio-urée
       de la N-N'-butylènethio-urée
       du thiazolidinthiol (2)
       du 4-thiazolidinthiol (2)
       de l'imidazolidinthiol (2) (N-N'-éthylènethio-urée)
       du 4-méthyl-2-pyrimidine-thiol et/ou
       du 2-thio-uracile
  12. Bain acide aqueux selon les revendications 10 et 11, caractérisé en ce qu'il contient un dérivé de thio-urée à des concentrations de 0,0001 à 0,5 g/litre.
  13. Bain acide aqueux selon les revendications 1 à 6, caractérisé en ce qu'il contient en outre un certain taux d'au moins un composé azoté polymère.
  14. Bain acide aqueux selon la revendication 13, caractérisé en ce qu'il contient
       de la polyéthylène-imine
       du polyéthylène-imide
       de l'amide d'acide polyacrylique
       de la polypropylène-imine
       de la polybutylène-imine
       de la N-méthylpolyèthylène-imine
       de la N-acétylpolyéthylène-imine et/ou
       de la N-burylpolyéthylène-imine
  15. Bain acide aqueux selon les revendications 13 et 14, caractérisé en ce qu'il contient des composés azotés polymères à des concentrations de 0,0001 à 0,5 g/litre.
  16. Bain acide aqueux, caractérisé, en ce qu'il contient un certain taux d'éther dialkylique de polyalkylène-glycol selon les revendications 1 à 3 et de composés thio selon les revendications 4 à 6.
  17. Utilisation du bain selon l'une au moins des revendications 1 à 16 pour renforcer des pistes conductrices de circuits imprimés.
  18. Utilisation du bain selon l'une au moins des revendications 1 à 16 pour la fabrication de revêtements en cuivre brillants et lisses.
EP92916259A 1991-08-07 1992-07-22 Bain acide de depot galvanique de cuivre et son utilisation Expired - Lifetime EP0598763B1 (fr)

Applications Claiming Priority (3)

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DE4126502 1991-08-07
DE4126502A DE4126502C1 (fr) 1991-08-07 1991-08-07
PCT/DE1992/000605 WO1993003204A1 (fr) 1991-08-07 1992-07-22 Bain acide de depot galvanique de cuivre et son utilisation

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EP0598763A1 EP0598763A1 (fr) 1994-06-01
EP0598763B1 true EP0598763B1 (fr) 1995-12-13

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US (1) US5433840A (fr)
EP (1) EP0598763B1 (fr)
JP (1) JP3121346B2 (fr)
AT (1) ATE131546T1 (fr)
CA (1) CA2115062C (fr)
DE (2) DE4126502C1 (fr)
ES (1) ES2082486T3 (fr)
WO (1) WO1993003204A1 (fr)

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CA2115062C (fr) 2005-11-22
EP0598763A1 (fr) 1994-06-01
DE4126502C1 (fr) 1993-02-11
DE59204703D1 (de) 1996-01-25
ES2082486T3 (es) 1996-03-16
JP3121346B2 (ja) 2000-12-25
ATE131546T1 (de) 1995-12-15
CA2115062A1 (fr) 1993-02-18
WO1993003204A1 (fr) 1993-02-18
JPH07505187A (ja) 1995-06-08
US5433840A (en) 1995-07-18

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