DK0913001T3 - Flerlagsfilmkondensatorstrukturer og fremgangsmåde - Google Patents
Flerlagsfilmkondensatorstrukturer og fremgangsmådeInfo
- Publication number
- DK0913001T3 DK0913001T3 DK97928073T DK97928073T DK0913001T3 DK 0913001 T3 DK0913001 T3 DK 0913001T3 DK 97928073 T DK97928073 T DK 97928073T DK 97928073 T DK97928073 T DK 97928073T DK 0913001 T3 DK0913001 T3 DK 0913001T3
- Authority
- DK
- Denmark
- Prior art keywords
- multilayer film
- film capacitor
- capacitor structures
- structures
- multilayer
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
- H01G4/306—Stacked capacitors made by thin film techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/671,057 US5745335A (en) | 1996-06-27 | 1996-06-27 | Multi-layer film capacitor structures and method |
Publications (1)
Publication Number | Publication Date |
---|---|
DK0913001T3 true DK0913001T3 (da) | 2004-06-28 |
Family
ID=24692974
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK97928073T DK0913001T3 (da) | 1996-06-27 | 1997-06-26 | Flerlagsfilmkondensatorstrukturer og fremgangsmåde |
Country Status (7)
Country | Link |
---|---|
US (1) | US5745335A (de) |
EP (2) | EP1408537A3 (de) |
JP (3) | JP2000514243A (de) |
AU (1) | AU3250097A (de) |
DE (1) | DE69727809T2 (de) |
DK (1) | DK0913001T3 (de) |
WO (1) | WO1998000871A1 (de) |
Families Citing this family (97)
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WO1998057341A1 (en) * | 1997-06-10 | 1998-12-17 | Usf Filtration And Separations Group, Inc. | Capacitor and method of making |
US5978206A (en) * | 1997-09-30 | 1999-11-02 | Hewlett-Packard Company | Stacked-fringe integrated circuit capacitors |
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CN1325552A (zh) * | 1998-11-09 | 2001-12-05 | 帕拉泰克微波公司 | 带有内装直流阻塞的铁电可变电抗器 |
EP1043740B1 (de) * | 1999-04-09 | 2006-08-23 | STMicroelectronics N.V. | Schichtförmige Kondensatorvorrichtung |
SE513809C2 (sv) * | 1999-04-13 | 2000-11-06 | Ericsson Telefon Ab L M | Avstämbara mikrovågsanordningar |
JP3701138B2 (ja) * | 1999-04-23 | 2005-09-28 | 松下電器産業株式会社 | 電子部品の製造方法 |
FR2801425B1 (fr) * | 1999-11-18 | 2004-05-28 | St Microelectronics Sa | Capacite integree a dielectrique hybride |
US6370013B1 (en) * | 1999-11-30 | 2002-04-09 | Kyocera Corporation | Electric element incorporating wiring board |
US6801422B2 (en) | 1999-12-28 | 2004-10-05 | Intel Corporation | High performance capacitor |
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US6411494B1 (en) * | 2000-04-06 | 2002-06-25 | Gennum Corporation | Distributed capacitor |
US6970362B1 (en) | 2000-07-31 | 2005-11-29 | Intel Corporation | Electronic assemblies and systems comprising interposer with embedded capacitors |
US6611419B1 (en) | 2000-07-31 | 2003-08-26 | Intel Corporation | Electronic assembly comprising substrate with embedded capacitors |
US6775150B1 (en) * | 2000-08-30 | 2004-08-10 | Intel Corporation | Electronic assembly comprising ceramic/organic hybrid substrate with embedded capacitors and methods of manufacture |
US6890629B2 (en) | 2001-09-21 | 2005-05-10 | Michael D. Casper | Integrated thin film capacitor/inductor/interconnect system and method |
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WO2002025709A2 (en) | 2000-09-21 | 2002-03-28 | Casper Michael D | Integrated thin film capacitor/inductor/interconnect system and method |
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US6577492B2 (en) | 2001-07-10 | 2003-06-10 | 3M Innovative Properties Company | Capacitor having epoxy dielectric layer cured with aminophenylfluorenes |
JP2003060054A (ja) | 2001-08-10 | 2003-02-28 | Rohm Co Ltd | 強誘電体キャパシタを有する半導体装置 |
US7425877B2 (en) * | 2001-09-21 | 2008-09-16 | Ultrasource, Inc. | Lange coupler system and method |
US6998696B2 (en) | 2001-09-21 | 2006-02-14 | Casper Michael D | Integrated thin film capacitor/inductor/interconnect system and method |
JP2004095638A (ja) * | 2002-08-29 | 2004-03-25 | Fujitsu Ltd | 薄膜デカップリングキャパシタとその製造方法 |
DE10260352A1 (de) * | 2002-12-20 | 2004-07-15 | Infineon Technologies Ag | Verfahren zum Herstellen einer Kondensatoranordnung und Kondensatoranordnung |
US8569142B2 (en) * | 2003-11-28 | 2013-10-29 | Blackberry Limited | Multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same |
JP4937495B2 (ja) * | 2003-12-25 | 2012-05-23 | 新光電気工業株式会社 | キャパシタ装置、電子部品実装構造及びキャパシタ装置の製造方法 |
DE102004026232B4 (de) * | 2004-05-28 | 2006-05-04 | Infineon Technologies Ag | Verfahren zum Ausbilden einer integrierten Halbleiterschaltungsanordnung |
JP2006108291A (ja) * | 2004-10-04 | 2006-04-20 | Seiko Epson Corp | 強誘電体キャパシタ及びその製造方法、並びに強誘電体メモリ装置 |
FR2881567A1 (fr) * | 2005-02-01 | 2006-08-04 | Commissariat Energie Atomique | Condensateur a champ de claquage eleve |
JP2006253631A (ja) * | 2005-02-14 | 2006-09-21 | Fujitsu Ltd | 半導体装置及びその製造方法、キャパシタ構造体及びその製造方法 |
JP2006228828A (ja) * | 2005-02-15 | 2006-08-31 | Seiko Npc Corp | キャパシタを有する半導体装置 |
JP4928748B2 (ja) * | 2005-06-27 | 2012-05-09 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
DE102005044330A1 (de) | 2005-09-16 | 2007-03-29 | Epcos Ag | Abstimmbarer Kondensator und Schaltung mit einem solchen Kondensator |
DE102005056906B4 (de) * | 2005-11-29 | 2010-01-07 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit in Reihe geschalteten Kondensatoren und Verwendung |
WO2008029361A1 (en) * | 2006-09-06 | 2008-03-13 | Nxp B.V. | Integrated circuit and use thereof |
JP4889512B2 (ja) * | 2007-01-22 | 2012-03-07 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
US7936553B2 (en) * | 2007-03-22 | 2011-05-03 | Paratek Microwave, Inc. | Capacitors adapted for acoustic resonance cancellation |
US8467169B2 (en) | 2007-03-22 | 2013-06-18 | Research In Motion Rf, Inc. | Capacitors adapted for acoustic resonance cancellation |
JP2008277546A (ja) * | 2007-04-27 | 2008-11-13 | Rohm Co Ltd | 半導体装置 |
US7981759B2 (en) * | 2007-07-11 | 2011-07-19 | Paratek Microwave, Inc. | Local oxidation of silicon planarization for polysilicon layers under thin film structures |
CN101896985B (zh) * | 2007-12-14 | 2012-05-23 | 株式会社村田制作所 | 薄膜叠层电容器的制造方法 |
JP5282194B2 (ja) * | 2008-02-01 | 2013-09-04 | セイコーNpc株式会社 | 可変容量装置 |
KR101065140B1 (ko) | 2008-03-17 | 2011-09-16 | 가부시끼가이샤 도시바 | 반도체 기억 장치 |
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JP4660566B2 (ja) * | 2008-03-17 | 2011-03-30 | 株式会社東芝 | 不揮発性半導体記憶装置 |
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JP2010098067A (ja) | 2008-10-15 | 2010-04-30 | Toshiba Corp | 半導体装置 |
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JP5267268B2 (ja) | 2009-03-26 | 2013-08-21 | Tdk株式会社 | 薄膜コンデンサ及びその製造方法 |
US9908817B2 (en) | 2009-06-02 | 2018-03-06 | Uchicago Argonne, Llc | Multilayer capacitors, method for making multilayer capacitors |
RU2443033C1 (ru) * | 2010-12-24 | 2012-02-20 | Владимир Андреевич Степанец | Способ управления емкостью электрического конденсатора и конденсатор переменной емкости на основе этого способа |
US8842411B2 (en) * | 2011-02-23 | 2014-09-23 | Pacesetter, Inc. | RF trapezoidal capacitor based EMI feedthru filter assembly |
US9082555B2 (en) * | 2011-08-22 | 2015-07-14 | Micron Technology, Inc. | Structure comprising multiple capacitors and methods for forming the structure |
KR20130070153A (ko) * | 2011-12-19 | 2013-06-27 | 에스케이하이닉스 주식회사 | 반도체 장치의 캐패시터, 레지스터, 메모리 시스템 및 이들의 제조 방법 |
JP2013207123A (ja) | 2012-03-29 | 2013-10-07 | Toshiba Corp | 半導体装置 |
EP2859432A1 (de) * | 2012-06-09 | 2015-04-15 | Johnson Controls Automotive Electronics GmbH | Kapazitive sensoranordnung und berührungsempfindlicher bildschirm mit einer kapazitiven sensoranordnung |
US9299498B2 (en) * | 2012-11-15 | 2016-03-29 | Eulex Corp. | Miniature wire-bondable capacitor |
US9041148B2 (en) * | 2013-06-13 | 2015-05-26 | Qualcomm Incorporated | Metal-insulator-metal capacitor structures |
KR101537717B1 (ko) * | 2013-09-17 | 2015-07-20 | 신유선 | 임베디드용 적층 세라믹 캐패시터 및 임베디드용 적층 세라믹 캐패시터의 제조 방법 |
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CN103745828B (zh) * | 2013-11-25 | 2016-09-28 | 大连天壹电子有限公司 | 干式积层陶瓷电容器的漏电流特性改善方法 |
FR3022072B1 (fr) | 2014-06-10 | 2017-08-25 | Commissariat Energie Atomique | Dispositif electrique multicouches |
US20160181233A1 (en) * | 2014-12-23 | 2016-06-23 | Qualcomm Incorporated | Metal-insulator-metal (mim) capacitors arranged in a pattern to reduce inductance, and related methods |
JP2016162904A (ja) * | 2015-03-03 | 2016-09-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US10115527B2 (en) | 2015-03-09 | 2018-10-30 | Blackberry Limited | Thin film dielectric stack |
EP3262680B1 (de) * | 2015-06-15 | 2019-08-21 | SanDisk Technologies LLC | Passive bauelemente zur integration in dreidimensionale speichervorrichtungen |
US9673271B2 (en) * | 2015-10-12 | 2017-06-06 | Qorvo Us, Inc. | Adaptive capacitors with reduced variation in value and in-line methods for making same |
KR101872582B1 (ko) | 2016-03-22 | 2018-06-28 | 삼성전기주식회사 | 적층 세라믹 커패시터 및 그 제조 방법 |
US10297658B2 (en) | 2016-06-16 | 2019-05-21 | Blackberry Limited | Method and apparatus for a thin film dielectric stack |
US10297389B2 (en) | 2016-07-28 | 2019-05-21 | Samsung Electro-Mechanics Co., Ltd. | Thin-film capacitor having asymmetric shaped vias |
KR101912282B1 (ko) | 2016-08-05 | 2018-10-29 | 삼성전기 주식회사 | 박막 커패시터 |
US10468187B2 (en) | 2016-08-05 | 2019-11-05 | Samsung Electro-Mechanics Co., Ltd. | Thin-film ceramic capacitor having capacitance forming portions separated by separation slit |
KR101853195B1 (ko) | 2016-09-01 | 2018-04-27 | 삼성전기주식회사 | 박막 커패시터 |
JP6737118B2 (ja) | 2016-10-11 | 2020-08-05 | Tdk株式会社 | 薄膜コンデンサ |
JP2018063989A (ja) | 2016-10-11 | 2018-04-19 | Tdk株式会社 | 薄膜キャパシタ |
JP6805702B2 (ja) | 2016-10-11 | 2020-12-23 | Tdk株式会社 | 薄膜コンデンサ |
JP2018073888A (ja) * | 2016-10-25 | 2018-05-10 | 大日本印刷株式会社 | 電子部品およびその製造方法 |
KR101942729B1 (ko) * | 2016-11-24 | 2019-01-28 | 삼성전기 주식회사 | 박막 커패시터 |
US10896950B2 (en) | 2017-02-27 | 2021-01-19 | Nxp Usa, Inc. | Method and apparatus for a thin film dielectric stack |
US10950384B2 (en) * | 2017-08-30 | 2021-03-16 | Micron Technology, Inc. | Method used in forming an electronic device comprising conductive material and ferroelectric material |
US10497774B2 (en) | 2017-10-23 | 2019-12-03 | Blackberry Limited | Small-gap coplanar tunable capacitors and methods for manufacturing thereof |
US10332687B2 (en) | 2017-10-23 | 2019-06-25 | Blackberry Limited | Tunable coplanar capacitor with vertical tuning and lateral RF path and methods for manufacturing thereof |
US10923286B2 (en) | 2018-02-21 | 2021-02-16 | Nxp Usa, Inc. | Method and apparatus for compensating for high thermal expansion coefficient mismatch of a stacked device |
JP6988688B2 (ja) * | 2018-05-21 | 2022-01-05 | 株式会社デンソー | 半導体装置 |
US10615294B2 (en) * | 2018-06-13 | 2020-04-07 | Qualcomm Incorporated | Variable capacitor |
US11004614B2 (en) | 2018-12-06 | 2021-05-11 | International Business Machines Corporation | Stacked capacitors for use in integrated circuit modules and the like |
JP2021077799A (ja) * | 2019-11-12 | 2021-05-20 | ローム株式会社 | 電子部品 |
CN111788649A (zh) * | 2020-01-08 | 2020-10-16 | 深圳市汇顶科技股份有限公司 | 电容器及其制作方法 |
US20220406530A1 (en) * | 2020-03-23 | 2022-12-22 | Tdk Corporation | Thin film capacitor and electronic circuit module having the same |
WO2021193513A1 (ja) * | 2020-03-24 | 2021-09-30 | Tdk株式会社 | コンデンサ部品及びこれを備える電子回路モジュール |
TWI744183B (zh) * | 2021-02-01 | 2021-10-21 | 力晶積成電子製造股份有限公司 | 電容單元及其製造方法 |
JPWO2022210551A1 (de) * | 2021-03-29 | 2022-10-06 | ||
US11990470B2 (en) * | 2021-09-24 | 2024-05-21 | International Business Machines Corporation | Ferroelectric and paraelectric stack capacitors |
KR102668436B1 (ko) * | 2021-11-08 | 2024-05-24 | (주)위드멤스 | 트렌치 커패시터 및 이의 제조 방법 |
US11869725B2 (en) * | 2021-11-30 | 2024-01-09 | Texas Instruments Incorporated | Multi-stacked capacitor |
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US4470099A (en) * | 1982-09-17 | 1984-09-04 | Matsushita Electric Industrial Co., Ltd. | Laminated capacitor |
JPH0682783B2 (ja) * | 1985-03-29 | 1994-10-19 | 三菱電機株式会社 | 容量およびその製造方法 |
US4827323A (en) * | 1986-01-07 | 1989-05-02 | Texas Instruments Incorporated | Stacked capacitor |
JPH01120858A (ja) * | 1987-11-04 | 1989-05-12 | Mitsubishi Electric Corp | 集積回路装置 |
JP2630421B2 (ja) * | 1988-04-30 | 1997-07-16 | 富士通株式会社 | 集積回路装置の製造方法 |
US4914546A (en) * | 1989-02-03 | 1990-04-03 | Micrel Incorporated | Stacked multi-polysilicon layer capacitor |
JPH0312909A (ja) * | 1989-06-12 | 1991-01-21 | Matsushita Electric Ind Co Ltd | フィルムコンデンサ |
JPH0334580A (ja) * | 1989-06-30 | 1991-02-14 | Toshiba Corp | 電子部品 |
JPH04111462A (ja) * | 1990-08-31 | 1992-04-13 | Fujitsu Ltd | 半導体装置 |
JPH04207011A (ja) * | 1990-11-30 | 1992-07-29 | Toshiba Corp | 薄膜コンデンサ部品 |
US5206788A (en) * | 1991-12-12 | 1993-04-27 | Ramtron Corporation | Series ferroelectric capacitor structure for monolithic integrated circuits and method |
JPH0613258A (ja) * | 1991-12-20 | 1994-01-21 | Matsushita Electric Ind Co Ltd | 薄膜積層コンデンサのパターン形成方法 |
US5191510A (en) * | 1992-04-29 | 1993-03-02 | Ramtron International Corporation | Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices |
US5367430A (en) * | 1992-10-21 | 1994-11-22 | Presidio Components, Inc. | Monolithic multiple capacitor |
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CN1030158C (zh) * | 1993-09-14 | 1995-10-25 | 山东大学 | 多层高压大容量陶瓷电容器及其包封方法和包封专用模具 |
US5414588A (en) * | 1993-09-20 | 1995-05-09 | The Regents Of The University Of California | High performance capacitors using nano-structure multilayer materials fabrication |
JPH07245232A (ja) * | 1994-03-07 | 1995-09-19 | Murata Mfg Co Ltd | 積層セラミック電子部品及びその製造方法 |
US5457598A (en) * | 1994-04-08 | 1995-10-10 | Radford; Kenneth C. | High capacitance thin film capacitor |
JPH07283076A (ja) * | 1994-04-15 | 1995-10-27 | Nippon Telegr & Teleph Corp <Ntt> | キャパシタ |
-
1996
- 1996-06-27 US US08/671,057 patent/US5745335A/en not_active Expired - Lifetime
-
1997
- 1997-06-26 EP EP03078542A patent/EP1408537A3/de not_active Withdrawn
- 1997-06-26 EP EP97928073A patent/EP0913001B1/de not_active Expired - Lifetime
- 1997-06-26 DE DE1997627809 patent/DE69727809T2/de not_active Expired - Fee Related
- 1997-06-26 DK DK97928073T patent/DK0913001T3/da active
- 1997-06-26 WO PCT/CA1997/000456 patent/WO1998000871A1/en active IP Right Grant
- 1997-06-26 JP JP10503681A patent/JP2000514243A/ja not_active Ceased
- 1997-06-26 AU AU32500/97A patent/AU3250097A/en not_active Abandoned
-
2009
- 2009-02-04 JP JP2009023545A patent/JP5225879B2/ja not_active Expired - Lifetime
-
2012
- 2012-10-29 JP JP2012237968A patent/JP5695628B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP5225879B2 (ja) | 2013-07-03 |
EP0913001A1 (de) | 1999-05-06 |
EP1408537A3 (de) | 2004-07-07 |
EP0913001B1 (de) | 2004-02-25 |
EP1408537A2 (de) | 2004-04-14 |
JP5695628B2 (ja) | 2015-04-08 |
US5745335A (en) | 1998-04-28 |
DE69727809D1 (de) | 2004-04-01 |
DE69727809T2 (de) | 2005-01-13 |
JP2013055344A (ja) | 2013-03-21 |
WO1998000871A1 (en) | 1998-01-08 |
JP2000514243A (ja) | 2000-10-24 |
JP2009152621A (ja) | 2009-07-09 |
AU3250097A (en) | 1998-01-21 |
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