DE69717052T2 - Verfahren zum lesen von daten für einen ferroelektrischen speicher und ferroelektrischer speicher - Google Patents

Verfahren zum lesen von daten für einen ferroelektrischen speicher und ferroelektrischer speicher

Info

Publication number
DE69717052T2
DE69717052T2 DE69717052T DE69717052T DE69717052T2 DE 69717052 T2 DE69717052 T2 DE 69717052T2 DE 69717052 T DE69717052 T DE 69717052T DE 69717052 T DE69717052 T DE 69717052T DE 69717052 T2 DE69717052 T2 DE 69717052T2
Authority
DE
Germany
Prior art keywords
voltage
cell plate
bit line
supply voltage
ferroelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69717052T
Other languages
German (de)
English (en)
Other versions
DE69717052D1 (de
Inventor
Koji Asari
Hiroshige Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8060528A external-priority patent/JPH1040687A/ja
Priority claimed from JP8176079A external-priority patent/JPH1040688A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69717052D1 publication Critical patent/DE69717052D1/de
Application granted granted Critical
Publication of DE69717052T2 publication Critical patent/DE69717052T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
DE69717052T 1996-03-18 1997-03-18 Verfahren zum lesen von daten für einen ferroelektrischen speicher und ferroelektrischer speicher Expired - Lifetime DE69717052T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8060528A JPH1040687A (ja) 1996-03-18 1996-03-18 強誘電体メモリ装置
JP8176079A JPH1040688A (ja) 1996-07-05 1996-07-05 強誘電体メモリ装置
PCT/JP1997/000882 WO1997035314A1 (en) 1996-03-18 1997-03-18 Data reading method for ferroelectric memory, and ferroelectric memory

Publications (2)

Publication Number Publication Date
DE69717052D1 DE69717052D1 (de) 2002-12-19
DE69717052T2 true DE69717052T2 (de) 2003-04-03

Family

ID=26401604

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69717052T Expired - Lifetime DE69717052T2 (de) 1996-03-18 1997-03-18 Verfahren zum lesen von daten für einen ferroelektrischen speicher und ferroelektrischer speicher

Country Status (8)

Country Link
US (1) US6028782A (enExample)
EP (1) EP0844618B1 (enExample)
JP (2) JP3621705B2 (enExample)
KR (1) KR100445879B1 (enExample)
CN (1) CN1183165A (enExample)
DE (1) DE69717052T2 (enExample)
TW (1) TW322578B (enExample)
WO (1) WO1997035314A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19830569C1 (de) * 1998-07-08 1999-11-18 Siemens Ag FeRAM-Anordnung
JP2000268581A (ja) * 1999-03-17 2000-09-29 Fujitsu Ltd Ｒｏｍデータを保持する強誘電体メモリ装置
US6430093B1 (en) 2001-05-24 2002-08-06 Ramtron International Corporation CMOS boosting circuit utilizing ferroelectric capacitors
US6535446B2 (en) 2001-05-24 2003-03-18 Ramtron International Corporation Two stage low voltage ferroelectric boost circuit
NO20015735D0 (no) * 2001-11-23 2001-11-23 Thin Film Electronics Asa Barrierelag
US6646904B2 (en) * 2001-12-21 2003-11-11 Intel Corporation Ferroelectric memory and method of reading the same
JP4146680B2 (ja) * 2002-07-18 2008-09-10 松下電器産業株式会社 強誘電体記憶装置及びその読み出し方法
JP4154392B2 (ja) * 2003-02-27 2008-09-24 富士通株式会社 半導体記憶装置及びデータ読み出し方法
JP3777611B2 (ja) * 2003-10-31 2006-05-24 セイコーエプソン株式会社 強誘電体メモリ装置及び電子機器
US7652909B2 (en) * 2007-10-21 2010-01-26 Ramtron International Corporation 2T/2C ferroelectric random access memory with complementary bit-line loads
JP2018181398A (ja) * 2017-04-21 2018-11-15 富士通セミコンダクター株式会社 強誘電体メモリ及びその制御方法
US10586583B2 (en) * 2018-03-08 2020-03-10 Cypress Semiconductor Corporation Ferroelectric random access memory sensing scheme
US10529401B2 (en) * 2018-05-04 2020-01-07 Micron Technology, Inc. Access line management for an array of memory cells

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
DE3887924T3 (de) * 1987-06-02 1999-08-12 National Semiconductor Corp., Santa Clara, Calif. Nichtflüchtige Speicheranordnung mit einem kapazitiven ferroelektrischen Speicherelement.
US5086412A (en) * 1990-11-21 1992-02-04 National Semiconductor Corporation Sense amplifier and method for ferroelectric memory
EP0616726B1 (en) * 1991-12-13 2001-06-06 Symetrix Corporation Layered superlattice material applications
JP2930168B2 (ja) * 1992-10-09 1999-08-03 シャープ株式会社 強誘電体メモリ装置の駆動方法
US5381364A (en) * 1993-06-24 1995-01-10 Ramtron International Corporation Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation
JPH08263989A (ja) * 1995-03-23 1996-10-11 Sony Corp 強誘電体記憶装置
US5532953A (en) * 1995-03-29 1996-07-02 Ramtron International Corporation Ferroelectric memory sensing method using distinct read and write voltages
US5530668A (en) * 1995-04-12 1996-06-25 Ramtron International Corporation Ferroelectric memory sensing scheme using bit lines precharged to a logic one voltage

Also Published As

Publication number Publication date
KR100445879B1 (ko) 2004-12-08
EP0844618A4 (en) 1998-08-26
EP0844618A1 (en) 1998-05-27
EP0844618B1 (en) 2002-11-13
JP3621705B2 (ja) 2005-02-16
US6028782A (en) 2000-02-22
KR19990014902A (ko) 1999-02-25
JP2004288367A (ja) 2004-10-14
DE69717052D1 (de) 2002-12-19
TW322578B (enExample) 1997-12-11
CN1183165A (zh) 1998-05-27
WO1997035314A1 (en) 1997-09-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP