TW322578B - - Google Patents

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Publication number
TW322578B
TW322578B TW086103312A TW86103312A TW322578B TW 322578 B TW322578 B TW 322578B TW 086103312 A TW086103312 A TW 086103312A TW 86103312 A TW86103312 A TW 86103312A TW 322578 B TW322578 B TW 322578B
Authority
TW
Taiwan
Prior art keywords
bit line
voltage
power supply
supply voltage
electrode
Prior art date
Application number
TW086103312A
Other languages
English (en)
Chinese (zh)
Original Assignee
Matsushita Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8060528A external-priority patent/JPH1040687A/ja
Priority claimed from JP8176079A external-priority patent/JPH1040688A/ja
Application filed by Matsushita Electron Co Ltd filed Critical Matsushita Electron Co Ltd
Application granted granted Critical
Publication of TW322578B publication Critical patent/TW322578B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
TW086103312A 1996-03-18 1997-03-17 TW322578B (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8060528A JPH1040687A (ja) 1996-03-18 1996-03-18 強誘電体メモリ装置
JP8176079A JPH1040688A (ja) 1996-07-05 1996-07-05 強誘電体メモリ装置

Publications (1)

Publication Number Publication Date
TW322578B true TW322578B (enExample) 1997-12-11

Family

ID=26401604

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086103312A TW322578B (enExample) 1996-03-18 1997-03-17

Country Status (8)

Country Link
US (1) US6028782A (enExample)
EP (1) EP0844618B1 (enExample)
JP (2) JP3621705B2 (enExample)
KR (1) KR100445879B1 (enExample)
CN (1) CN1183165A (enExample)
DE (1) DE69717052T2 (enExample)
TW (1) TW322578B (enExample)
WO (1) WO1997035314A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19830569C1 (de) * 1998-07-08 1999-11-18 Siemens Ag FeRAM-Anordnung
JP2000268581A (ja) * 1999-03-17 2000-09-29 Fujitsu Ltd Ｒｏｍデータを保持する強誘電体メモリ装置
US6535446B2 (en) 2001-05-24 2003-03-18 Ramtron International Corporation Two stage low voltage ferroelectric boost circuit
US6430093B1 (en) 2001-05-24 2002-08-06 Ramtron International Corporation CMOS boosting circuit utilizing ferroelectric capacitors
NO20015735D0 (no) * 2001-11-23 2001-11-23 Thin Film Electronics Asa Barrierelag
US6646904B2 (en) * 2001-12-21 2003-11-11 Intel Corporation Ferroelectric memory and method of reading the same
JP4146680B2 (ja) * 2002-07-18 2008-09-10 松下電器産業株式会社 強誘電体記憶装置及びその読み出し方法
JP4154392B2 (ja) * 2003-02-27 2008-09-24 富士通株式会社 半導体記憶装置及びデータ読み出し方法
JP3777611B2 (ja) * 2003-10-31 2006-05-24 セイコーエプソン株式会社 強誘電体メモリ装置及び電子機器
US7652909B2 (en) * 2007-10-21 2010-01-26 Ramtron International Corporation 2T/2C ferroelectric random access memory with complementary bit-line loads
JP2018181398A (ja) * 2017-04-21 2018-11-15 富士通セミコンダクター株式会社 強誘電体メモリ及びその制御方法
US10586583B2 (en) * 2018-03-08 2020-03-10 Cypress Semiconductor Corporation Ferroelectric random access memory sensing scheme
US10529401B2 (en) * 2018-05-04 2020-01-07 Micron Technology, Inc. Access line management for an array of memory cells

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
DE3887924T3 (de) * 1987-06-02 1999-08-12 National Semiconductor Corp., Santa Clara, Calif. Nichtflüchtige Speicheranordnung mit einem kapazitiven ferroelektrischen Speicherelement.
US5086412A (en) * 1990-11-21 1992-02-04 National Semiconductor Corporation Sense amplifier and method for ferroelectric memory
JP3162718B2 (ja) * 1991-12-13 2001-05-08 サイメトリックス，コーポレイション 集積回路メモリー
JP2930168B2 (ja) * 1992-10-09 1999-08-03 シャープ株式会社 強誘電体メモリ装置の駆動方法
US5381364A (en) * 1993-06-24 1995-01-10 Ramtron International Corporation Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation
JPH08263989A (ja) * 1995-03-23 1996-10-11 Sony Corp 強誘電体記憶装置
US5532953A (en) * 1995-03-29 1996-07-02 Ramtron International Corporation Ferroelectric memory sensing method using distinct read and write voltages
US5530668A (en) * 1995-04-12 1996-06-25 Ramtron International Corporation Ferroelectric memory sensing scheme using bit lines precharged to a logic one voltage

Also Published As

Publication number Publication date
WO1997035314A1 (en) 1997-09-25
KR100445879B1 (ko) 2004-12-08
EP0844618B1 (en) 2002-11-13
JP3621705B2 (ja) 2005-02-16
JP2004288367A (ja) 2004-10-14
KR19990014902A (ko) 1999-02-25
CN1183165A (zh) 1998-05-27
US6028782A (en) 2000-02-22
EP0844618A1 (en) 1998-05-27
DE69717052D1 (de) 2002-12-19
EP0844618A4 (en) 1998-08-26
DE69717052T2 (de) 2003-04-03

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees