CN1183165A - 强电介质存储器件的数据读出方法及强电介质存储器件 - Google Patents

强电介质存储器件的数据读出方法及强电介质存储器件 Download PDF

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Publication number
CN1183165A
CN1183165A CN97190219A CN97190219A CN1183165A CN 1183165 A CN1183165 A CN 1183165A CN 97190219 A CN97190219 A CN 97190219A CN 97190219 A CN97190219 A CN 97190219A CN 1183165 A CN1183165 A CN 1183165A
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CN
China
Prior art keywords
bit line
voltage
sense amplifier
potential
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN97190219A
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English (en)
Chinese (zh)
Inventor
平野博茂
浅利康二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8060528A external-priority patent/JPH1040687A/ja
Priority claimed from JP8176079A external-priority patent/JPH1040688A/ja
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of CN1183165A publication Critical patent/CN1183165A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
CN97190219A 1996-03-18 1997-03-18 强电介质存储器件的数据读出方法及强电介质存储器件 Pending CN1183165A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP8060528A JPH1040687A (ja) 1996-03-18 1996-03-18 強誘電体メモリ装置
JP60528/96 1996-03-18
JP8176079A JPH1040688A (ja) 1996-07-05 1996-07-05 強誘電体メモリ装置
JP176079/96 1996-07-05

Publications (1)

Publication Number Publication Date
CN1183165A true CN1183165A (zh) 1998-05-27

Family

ID=26401604

Family Applications (1)

Application Number Title Priority Date Filing Date
CN97190219A Pending CN1183165A (zh) 1996-03-18 1997-03-18 强电介质存储器件的数据读出方法及强电介质存储器件

Country Status (8)

Country Link
US (1) US6028782A (enExample)
EP (1) EP0844618B1 (enExample)
JP (2) JP3621705B2 (enExample)
KR (1) KR100445879B1 (enExample)
CN (1) CN1183165A (enExample)
DE (1) DE69717052T2 (enExample)
TW (1) TW322578B (enExample)
WO (1) WO1997035314A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100446119C (zh) * 2003-10-31 2008-12-24 精工爱普生株式会社 强电介质存储器装置及电子设备
CN100449640C (zh) * 2001-11-23 2009-01-07 薄膜电子有限公司 铁电或驻极体存储电路
CN100505088C (zh) * 2003-02-27 2009-06-24 富士通微电子株式会社 半导体存储装置和数据读出方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19830569C1 (de) * 1998-07-08 1999-11-18 Siemens Ag FeRAM-Anordnung
JP2000268581A (ja) * 1999-03-17 2000-09-29 Fujitsu Ltd Ｒｏｍデータを保持する強誘電体メモリ装置
US6430093B1 (en) 2001-05-24 2002-08-06 Ramtron International Corporation CMOS boosting circuit utilizing ferroelectric capacitors
US6535446B2 (en) 2001-05-24 2003-03-18 Ramtron International Corporation Two stage low voltage ferroelectric boost circuit
US6646904B2 (en) * 2001-12-21 2003-11-11 Intel Corporation Ferroelectric memory and method of reading the same
JP4146680B2 (ja) * 2002-07-18 2008-09-10 松下電器産業株式会社 強誘電体記憶装置及びその読み出し方法
US7652909B2 (en) * 2007-10-21 2010-01-26 Ramtron International Corporation 2T/2C ferroelectric random access memory with complementary bit-line loads
JP2018181398A (ja) * 2017-04-21 2018-11-15 富士通セミコンダクター株式会社 強誘電体メモリ及びその制御方法
US10586583B2 (en) * 2018-03-08 2020-03-10 Cypress Semiconductor Corporation Ferroelectric random access memory sensing scheme
US10529401B2 (en) * 2018-05-04 2020-01-07 Micron Technology, Inc. Access line management for an array of memory cells

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
EP0293798B2 (en) * 1987-06-02 1998-12-30 National Semiconductor Corporation Non-volatile memory ciruit using ferroelectric capacitor storage element
US5086412A (en) * 1990-11-21 1992-02-04 National Semiconductor Corporation Sense amplifier and method for ferroelectric memory
DE69231865T2 (de) * 1991-12-13 2001-09-20 Symetrix Corp., Colorado Springs Verwendung von schichtigem übergitter material
JP2930168B2 (ja) * 1992-10-09 1999-08-03 シャープ株式会社 強誘電体メモリ装置の駆動方法
US5381364A (en) * 1993-06-24 1995-01-10 Ramtron International Corporation Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation
JPH08263989A (ja) * 1995-03-23 1996-10-11 Sony Corp 強誘電体記憶装置
US5532953A (en) * 1995-03-29 1996-07-02 Ramtron International Corporation Ferroelectric memory sensing method using distinct read and write voltages
US5530668A (en) * 1995-04-12 1996-06-25 Ramtron International Corporation Ferroelectric memory sensing scheme using bit lines precharged to a logic one voltage

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100449640C (zh) * 2001-11-23 2009-01-07 薄膜电子有限公司 铁电或驻极体存储电路
CN100505088C (zh) * 2003-02-27 2009-06-24 富士通微电子株式会社 半导体存储装置和数据读出方法
CN100446119C (zh) * 2003-10-31 2008-12-24 精工爱普生株式会社 强电介质存储器装置及电子设备

Also Published As

Publication number Publication date
KR100445879B1 (ko) 2004-12-08
WO1997035314A1 (en) 1997-09-25
EP0844618A1 (en) 1998-05-27
JP3621705B2 (ja) 2005-02-16
DE69717052D1 (de) 2002-12-19
US6028782A (en) 2000-02-22
KR19990014902A (ko) 1999-02-25
TW322578B (enExample) 1997-12-11
JP2004288367A (ja) 2004-10-14
DE69717052T2 (de) 2003-04-03
EP0844618B1 (en) 2002-11-13
EP0844618A4 (en) 1998-08-26

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