JP3777611B2 - 強誘電体メモリ装置及び電子機器 - Google Patents
強誘電体メモリ装置及び電子機器 Download PDFInfo
- Publication number
- JP3777611B2 JP3777611B2 JP2003373353A JP2003373353A JP3777611B2 JP 3777611 B2 JP3777611 B2 JP 3777611B2 JP 2003373353 A JP2003373353 A JP 2003373353A JP 2003373353 A JP2003373353 A JP 2003373353A JP 3777611 B2 JP3777611 B2 JP 3777611B2
- Authority
- JP
- Japan
- Prior art keywords
- ferroelectric
- ferroelectric capacitor
- bit line
- capacitor
- capacitors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Description
Claims (3)
- 第1のビット線と第1のプレート線とを備えた強誘電体メモリ装置であって、
リング状に直列に接続された複数の強誘電体キャパシタを有する強誘電体キャパシタ群と、
前記強誘電体キャパシタ群のうちのいずれかの強誘電体キャパシタを、前記第1のビット線及び前記第1のプレート線に電気的に接続する複数のスイッチを有するスイッチ群と、を備えたことを特徴とする強誘電体メモリ装置。 - 前記複数の強誘電体キャパシタはそれぞれ一端と他端とを有しており、
前記スイッチ群は、
前記強誘電体キャパシタ群のうちの第1の強誘電体キャパシタの前記一端との前記第1のビット線と間に設けられた第1のスイッチと、
前記第1の強誘電体キャパシタに隣接する第2の強誘電体キャパシタの前記一端及び前記第1の強誘電体キャパシタの前記他端と前記第1のプレート線との間に設けられた第2のスイッチと、
前記第2の強誘電体キャパシタの前記他端と前記第1のビット線との間に設けられた第3のスイッチと
を有することを特徴とする請求項1に記載の強誘電体メモリ装置。 - 前記第1の強誘電体キャパシタを選択する場合に、前記第1のスイッチ及び前記第2のスイッチを導通させ、前記第2の強誘電体キャパシタを選択する場合に、前記第2のスイッチ及び前記第3のスイッチを導通させる手段をさらに備えたことを特徴とする請求項2に記載の強誘電体メモリ装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003373353A JP3777611B2 (ja) | 2003-10-31 | 2003-10-31 | 強誘電体メモリ装置及び電子機器 |
US10/979,084 US7126840B2 (en) | 2003-10-31 | 2004-10-29 | Ferroelectric memory device and electronic apparatus |
CNB2004100896788A CN100446119C (zh) | 2003-10-31 | 2004-10-29 | 强电介质存储器装置及电子设备 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003373353A JP3777611B2 (ja) | 2003-10-31 | 2003-10-31 | 強誘電体メモリ装置及び電子機器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005135558A JP2005135558A (ja) | 2005-05-26 |
JP3777611B2 true JP3777611B2 (ja) | 2006-05-24 |
Family
ID=34631360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003373353A Expired - Lifetime JP3777611B2 (ja) | 2003-10-31 | 2003-10-31 | 強誘電体メモリ装置及び電子機器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7126840B2 (ja) |
JP (1) | JP3777611B2 (ja) |
CN (1) | CN100446119C (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104637520B (zh) * | 2013-11-13 | 2017-09-22 | 旺宏电子股份有限公司 | 存储器阵列结构与其操作方法与制造方法 |
EP3507805A4 (en) | 2016-08-31 | 2020-06-03 | Micron Technology, Inc. | DEVICES AND METHOD WITH FERROELECTRIC MEMORY AND FOR OPERATING FERROELECTRIC MEMORY |
WO2018044510A1 (en) | 2016-08-31 | 2018-03-08 | Micron Technology, Inc. | Apparatuses and methods including two transistor-one capacitor memory and for accessing same |
WO2018044487A1 (en) * | 2016-08-31 | 2018-03-08 | Micron Technology, Inc. | Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory |
JP6980006B2 (ja) | 2016-08-31 | 2021-12-15 | マイクロン テクノロジー,インク. | 強誘電体メモリセル |
US10867675B2 (en) | 2017-07-13 | 2020-12-15 | Micron Technology, Inc. | Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells |
US10446502B2 (en) | 2017-08-30 | 2019-10-15 | Micron, Technology, Inc. | Apparatuses and methods for shielded memory architecture |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3156971B2 (ja) | 1990-06-08 | 2001-04-16 | 株式会社東芝 | 半導体記憶装置、半導体記憶装置の読み出し方法、及び半導体記憶装置の書き込み方法 |
TW322578B (ja) * | 1996-03-18 | 1997-12-11 | Matsushita Electron Co Ltd | |
EP0829882B1 (en) * | 1996-03-25 | 2003-07-02 | Matsushita Electric Industrial Co., Ltd. | Ferroelectric storage device |
KR100389032B1 (ko) * | 2000-11-21 | 2003-06-25 | 삼성전자주식회사 | 강유전체 메모리 장치 및 그의 제조 방법 |
-
2003
- 2003-10-31 JP JP2003373353A patent/JP3777611B2/ja not_active Expired - Lifetime
-
2004
- 2004-10-29 CN CNB2004100896788A patent/CN100446119C/zh not_active Expired - Fee Related
- 2004-10-29 US US10/979,084 patent/US7126840B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN100446119C (zh) | 2008-12-24 |
US20050122763A1 (en) | 2005-06-09 |
CN1612264A (zh) | 2005-05-04 |
US7126840B2 (en) | 2006-10-24 |
JP2005135558A (ja) | 2005-05-26 |
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