DE69511661T2 - Referenzschaltung - Google Patents

Referenzschaltung

Info

Publication number
DE69511661T2
DE69511661T2 DE69511661T DE69511661T DE69511661T2 DE 69511661 T2 DE69511661 T2 DE 69511661T2 DE 69511661 T DE69511661 T DE 69511661T DE 69511661 T DE69511661 T DE 69511661T DE 69511661 T2 DE69511661 T2 DE 69511661T2
Authority
DE
Germany
Prior art keywords
reference circuit
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69511661T
Other languages
English (en)
Other versions
DE69511661D1 (de
Inventor
Michael Charles Hammick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Ltd Great Britain
Original Assignee
SGS Thomson Microelectronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics Ltd filed Critical SGS Thomson Microelectronics Ltd
Application granted granted Critical
Publication of DE69511661D1 publication Critical patent/DE69511661D1/de
Publication of DE69511661T2 publication Critical patent/DE69511661T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
DE69511661T 1994-11-15 1995-11-09 Referenzschaltung Expired - Fee Related DE69511661T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9423034A GB9423034D0 (en) 1994-11-15 1994-11-15 A reference circuit

Publications (2)

Publication Number Publication Date
DE69511661D1 DE69511661D1 (de) 1999-09-30
DE69511661T2 true DE69511661T2 (de) 2000-03-09

Family

ID=10764428

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69511661T Expired - Fee Related DE69511661T2 (de) 1994-11-15 1995-11-09 Referenzschaltung

Country Status (5)

Country Link
US (1) US5654918A (de)
EP (1) EP0713164B1 (de)
JP (2) JPH08235884A (de)
DE (1) DE69511661T2 (de)
GB (1) GB9423034D0 (de)

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US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US7071060B1 (en) 1996-02-28 2006-07-04 Sandisk Corporation EEPROM with split gate source side infection with sidewall spacers
KR100187665B1 (ko) * 1996-01-26 1999-06-01 김주용 플래쉬 메모리 장치
US5694366A (en) * 1996-05-01 1997-12-02 Micron Quantum Devices, Inc. OP amp circuit with variable resistance and memory system including same
DE69629669T2 (de) * 1996-06-18 2004-07-08 Stmicroelectronics S.R.L., Agrate Brianza Leseverfahren und -schaltung für nichtflüchtige Speicherzellen mit Entzerrerschaltung
US6078518A (en) * 1998-02-25 2000-06-20 Micron Technology, Inc. Apparatus and method for reading state of multistate non-volatile memory cells
US5764568A (en) * 1996-10-24 1998-06-09 Micron Quantum Devices, Inc. Method for performing analog over-program and under-program detection for a multistate memory cell
US5790453A (en) * 1996-10-24 1998-08-04 Micron Quantum Devices, Inc. Apparatus and method for reading state of multistate non-volatile memory cells
US5771346A (en) 1996-10-24 1998-06-23 Micron Quantum Devices, Inc. Apparatus and method for detecting over-programming condition in multistate memory device
US5768287A (en) 1996-10-24 1998-06-16 Micron Quantum Devices, Inc. Apparatus and method for programming multistate memory device
US5805500A (en) * 1997-06-18 1998-09-08 Sgs-Thomson Microelectronics S.R.L. Circuit and method for generating a read reference signal for nonvolatile memory cells
KR100282522B1 (ko) * 1998-09-17 2001-02-15 김영환 비휘발성메모리의 문턱전압을 프로그램하는 장치 및 방법
US6567302B2 (en) 1998-12-29 2003-05-20 Micron Technology, Inc. Method and apparatus for programming multi-state cells in a memory device
US6185135B1 (en) 1999-01-05 2001-02-06 International Business Machines Corporation Robust wordline activation delay monitor using a plurality of sample wordlines
US6115310A (en) * 1999-01-05 2000-09-05 International Business Machines Corporation Wordline activation delay monitor using sample wordline located in data-storing array
EP1071094B1 (de) * 1999-06-25 2005-11-23 STMicroelectronics S.r.l. Lesungsschaltung für einen Halbleiterspeicher
US6816554B1 (en) * 1999-07-12 2004-11-09 Intel Corporation Communication bus for low voltage swing data signals
US6219279B1 (en) * 1999-10-29 2001-04-17 Zilog, Inc. Non-volatile memory program driver and read reference circuits
JP3611497B2 (ja) 2000-03-02 2005-01-19 松下電器産業株式会社 電流センスアンプ
IT1319037B1 (it) * 2000-10-27 2003-09-23 St Microelectronics Srl Circuito di lettura di memorie non volatili
US6697283B2 (en) 2001-01-03 2004-02-24 Micron Technology, Inc. Temperature and voltage compensated reference current generator
US6449190B1 (en) * 2001-01-17 2002-09-10 Advanced Micro Devices, Inc. Adaptive reference cells for a memory device
US6490203B1 (en) * 2001-05-24 2002-12-03 Edn Silicon Devices, Inc. Sensing scheme of flash EEPROM
US7324394B1 (en) * 2002-08-01 2008-01-29 T-Ram Semiconductor, Inc. Single data line sensing scheme for TCCT-based memory cells
US6868024B2 (en) * 2002-12-26 2005-03-15 Micron Technology, Inc. Low voltage sense amplifier for operation under a reduced bit line bias voltage
ITMI20042538A1 (it) * 2004-12-29 2005-03-29 Atmel Corp Metodo e sistema per la riduzione del soft-writing in una memoria flash a livelli multipli
US20070253255A1 (en) * 2006-04-28 2007-11-01 Girolamo Gallo Memory device, method for sensing a current output from a selected memory cell and sensing circuit
US7567462B2 (en) * 2006-11-16 2009-07-28 Micron Technology, Inc. Method and system for selectively limiting peak power consumption during programming or erase of non-volatile memory devices
JP2008071483A (ja) * 2007-10-03 2008-03-27 Renesas Technology Corp 不揮発性半導体記憶装置
JP6161482B2 (ja) 2013-09-19 2017-07-12 ルネサスエレクトロニクス株式会社 半導体記憶装置

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
JPS63293800A (ja) * 1987-05-27 1988-11-30 Toshiba Corp 不揮発性半導体メモリ
JP2925138B2 (ja) * 1987-09-29 1999-07-28 株式会社東芝 不揮発性半導体メモリ
JP2637752B2 (ja) * 1987-12-21 1997-08-06 日本電気アイシーマイコンシステム株式会社 半導体読み出し専用メモリ
US5022009A (en) * 1988-06-02 1991-06-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having reading operation of information by differential amplification
JPH0770235B2 (ja) * 1988-06-24 1995-07-31 株式会社東芝 不揮発性メモリ回路装置
US5040148A (en) * 1988-06-24 1991-08-13 Kabushiki Kaisha Toshiba Semiconductor memory device with address transition actuated dummy cell
JPH0359887A (ja) * 1989-07-27 1991-03-14 Nec Corp メモリーの読出回路
JP2933090B2 (ja) * 1990-04-25 1999-08-09 富士通株式会社 不揮発性半導体記憶装置
NL9001018A (nl) * 1990-04-27 1991-11-18 Philips Nv Referentiegenerator.
JPH04291608A (ja) * 1991-03-20 1992-10-15 Fujitsu Ltd 電源回路
JP2647276B2 (ja) * 1991-04-30 1997-08-27 株式会社東芝 定電位発生用半導体装置
IT1249809B (it) * 1991-05-10 1995-03-28 St Microelectronics Srl Circuito di lettura a offset di corrente modulata o a sbilanciamento di corrente per celle di memorie programmabili
JPH04362597A (ja) * 1991-06-10 1992-12-15 Nec Ic Microcomput Syst Ltd 電流センスアンプ回路
JPH0536288A (ja) * 1991-08-01 1993-02-12 Fujitsu Ltd 不揮発性半導体記憶装置
WO1993018412A1 (en) * 1992-03-13 1993-09-16 Silicon Storage Technology, Inc. A sensing circuit for a floating gate memory device
KR950010284B1 (ko) * 1992-03-18 1995-09-12 삼성전자주식회사 기준전압 발생회로
US5291446A (en) * 1992-10-22 1994-03-01 Advanced Micro Devices, Inc. VPP power supply having a regulator circuit for controlling a regulated positive potential
US5339272A (en) * 1992-12-21 1994-08-16 Intel Corporation Precision voltage reference
US5487045A (en) * 1994-09-16 1996-01-23 Philips Electroics North America Corporation Sense amplifier having variable sensing load for non-volatile memory

Also Published As

Publication number Publication date
EP0713164A1 (de) 1996-05-22
JPH08235884A (ja) 1996-09-13
EP0713164B1 (de) 1999-08-25
DE69511661D1 (de) 1999-09-30
GB9423034D0 (en) 1995-01-04
US5654918A (en) 1997-08-05
JP3053969U (ja) 1998-11-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee