DE69635953T2 - VERFAHREN ZUR HERSTELLUNG EINER Ta205 DIELEKTRISCHEN SCHICHT - Google Patents

VERFAHREN ZUR HERSTELLUNG EINER Ta205 DIELEKTRISCHEN SCHICHT Download PDF

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Publication number
DE69635953T2
DE69635953T2 DE69635953T DE69635953T DE69635953T2 DE 69635953 T2 DE69635953 T2 DE 69635953T2 DE 69635953 T DE69635953 T DE 69635953T DE 69635953 T DE69635953 T DE 69635953T DE 69635953 T2 DE69635953 T2 DE 69635953T2
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DE
Germany
Prior art keywords
capacitor
electrically conductive
diffusion barrier
layer
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69635953T
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German (de)
English (en)
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DE69635953D1 (de
Inventor
S. Gurtej Boise SANDHU
C. Pierre Boise FAZAN
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Micron Technology Inc
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Micron Technology Inc
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Publication of DE69635953D1 publication Critical patent/DE69635953D1/de
Application granted granted Critical
Publication of DE69635953T2 publication Critical patent/DE69635953T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Inorganic Insulating Materials (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
DE69635953T 1995-05-19 1996-05-17 VERFAHREN ZUR HERSTELLUNG EINER Ta205 DIELEKTRISCHEN SCHICHT Expired - Lifetime DE69635953T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US444853 1995-05-19
US08/444,853 US5663088A (en) 1995-05-19 1995-05-19 Method of forming a Ta2 O5 dielectric layer with amorphous diffusion barrier layer and method of forming a capacitor having a Ta2 O5 dielectric layer and amorphous diffusion barrier layer
PCT/US1996/007212 WO1996036993A1 (en) 1995-05-19 1996-05-17 METHOD OF FORMING A Ta2O5 DIELECTRIC LAYER

Publications (2)

Publication Number Publication Date
DE69635953D1 DE69635953D1 (de) 2006-05-11
DE69635953T2 true DE69635953T2 (de) 2007-02-01

Family

ID=23766625

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69635953T Expired - Lifetime DE69635953T2 (de) 1995-05-19 1996-05-17 VERFAHREN ZUR HERSTELLUNG EINER Ta205 DIELEKTRISCHEN SCHICHT

Country Status (9)

Country Link
US (4) US5663088A (enExample)
EP (1) EP0826237B1 (enExample)
JP (1) JP4314413B2 (enExample)
KR (1) KR100419921B1 (enExample)
AT (1) ATE321359T1 (enExample)
AU (1) AU5864596A (enExample)
DE (1) DE69635953T2 (enExample)
TW (1) TW293161B (enExample)
WO (1) WO1996036993A1 (enExample)

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Also Published As

Publication number Publication date
US6198124B1 (en) 2001-03-06
WO1996036993A1 (en) 1996-11-21
KR19990014845A (ko) 1999-02-25
TW293161B (enExample) 1996-12-11
JPH11509684A (ja) 1999-08-24
ATE321359T1 (de) 2006-04-15
JP4314413B2 (ja) 2009-08-19
AU5864596A (en) 1996-11-29
DE69635953D1 (de) 2006-05-11
US5663088A (en) 1997-09-02
EP0826237B1 (en) 2006-03-22
EP0826237A4 (en) 1998-09-23
US5814852A (en) 1998-09-29
KR100419921B1 (ko) 2004-05-20
US6017789A (en) 2000-01-25
EP0826237A1 (en) 1998-03-04

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