US5665625A
(en)
|
1995-05-19 |
1997-09-09 |
Micron Technology, Inc. |
Method of forming capacitors having an amorphous electrically conductive layer
|
US5786248A
(en)
*
|
1995-10-12 |
1998-07-28 |
Micron Technology, Inc. |
Semiconductor processing method of forming a tantalum oxide containing capacitor
|
KR100189982B1
(ko)
*
|
1995-11-29 |
1999-06-01 |
윤종용 |
고유전체 캐패시터의 제조방법
|
US5754390A
(en)
*
|
1996-01-23 |
1998-05-19 |
Micron Technology, Inc. |
Integrated capacitor bottom electrode for use with conformal dielectric
|
JPH09260600A
(ja)
*
|
1996-03-19 |
1997-10-03 |
Sharp Corp |
半導体メモリ素子の製造方法
|
US6455916B1
(en)
*
|
1996-04-08 |
2002-09-24 |
Micron Technology, Inc. |
Integrated circuit devices containing isolated dielectric material
|
US5843830A
(en)
*
|
1996-06-26 |
1998-12-01 |
Micron Technology, Inc. |
Capacitor, and methods for forming a capacitor
|
US6251720B1
(en)
|
1996-09-27 |
2001-06-26 |
Randhir P. S. Thakur |
High pressure reoxidation/anneal of high dielectric constant materials
|
US6548854B1
(en)
*
|
1997-12-22 |
2003-04-15 |
Agere Systems Inc. |
Compound, high-K, gate and capacitor insulator layer
|
US6075266A
(en)
*
|
1997-01-09 |
2000-06-13 |
Kabushiki Kaisha Toshiba |
Semiconductor device having MIS transistors and capacitor
|
JPH10247723A
(ja)
*
|
1997-03-04 |
1998-09-14 |
Oki Electric Ind Co Ltd |
半導体装置のキャパシタの製造方法
|
US5910880A
(en)
|
1997-08-20 |
1999-06-08 |
Micron Technology, Inc. |
Semiconductor circuit components and capacitors
|
JP3445925B2
(ja)
*
|
1997-10-07 |
2003-09-16 |
シャープ株式会社 |
半導体記憶素子の製造方法
|
US6156647A
(en)
*
|
1997-10-27 |
2000-12-05 |
Applied Materials, Inc. |
Barrier layer structure which prevents migration of silicon into an adjacent metallic layer and the method of fabrication of the barrier layer
|
US6025228A
(en)
*
|
1997-11-25 |
2000-02-15 |
Advanced Micro Devices, Inc. |
Method of fabricating an oxynitride-capped high dielectric constant interpolysilicon dielectric structure for a low voltage non-volatile memory
|
KR100285066B1
(ko)
*
|
1997-12-06 |
2001-04-02 |
윤종용 |
고유전체 물질을 갖는 커패시터의 형성방법
|
US6165833A
(en)
|
1997-12-19 |
2000-12-26 |
Micron Technology, Inc. |
Semiconductor processing method of forming a capacitor
|
US6911371B2
(en)
|
1997-12-19 |
2005-06-28 |
Micron Technology, Inc. |
Capacitor forming methods with barrier layers to threshold voltage shift inducing material
|
US6150706A
(en)
|
1998-02-27 |
2000-11-21 |
Micron Technology, Inc. |
Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer
|
US6682970B1
(en)
|
1998-02-27 |
2004-01-27 |
Micron Technology, Inc. |
Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer
|
US7034353B2
(en)
|
1998-02-27 |
2006-04-25 |
Micron Technology, Inc. |
Methods for enhancing capacitors having roughened features to increase charge-storage capacity
|
US6191443B1
(en)
|
1998-02-28 |
2001-02-20 |
Micron Technology, Inc. |
Capacitors, methods of forming capacitors, and DRAM memory cells
|
US6162744A
(en)
*
|
1998-02-28 |
2000-12-19 |
Micron Technology, Inc. |
Method of forming capacitors having high-K oxygen containing capacitor dielectric layers, method of processing high-K oxygen containing dielectric layers, method of forming a DRAM cell having having high-K oxygen containing capacitor dielectric layers
|
US6111285A
(en)
|
1998-03-17 |
2000-08-29 |
Micron Technology, Inc. |
Boride electrodes and barriers for cell dielectrics
|
US6156638A
(en)
|
1998-04-10 |
2000-12-05 |
Micron Technology, Inc. |
Integrated circuitry and method of restricting diffusion from one material to another
|
US6730559B2
(en)
*
|
1998-04-10 |
2004-05-04 |
Micron Technology, Inc. |
Capacitors and methods of forming capacitors
|
US6165834A
(en)
*
|
1998-05-07 |
2000-12-26 |
Micron Technology, Inc. |
Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell
|
US6255186B1
(en)
|
1998-05-21 |
2001-07-03 |
Micron Technology, Inc. |
Methods of forming integrated circuitry and capacitors having a capacitor electrode having a base and a pair of walls projecting upwardly therefrom
|
US6331811B2
(en)
*
|
1998-06-12 |
2001-12-18 |
Nec Corporation |
Thin-film resistor, wiring substrate, and method for manufacturing the same
|
KR100290895B1
(ko)
*
|
1998-06-30 |
2001-07-12 |
김영환 |
반도체 소자의 커패시터 구조 및 이의 제조 방법
|
JP3592535B2
(ja)
|
1998-07-16 |
2004-11-24 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
JP4030193B2
(ja)
|
1998-07-16 |
2008-01-09 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US6271131B1
(en)
|
1998-08-26 |
2001-08-07 |
Micron Technology, Inc. |
Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers
|
US6284655B1
(en)
|
1998-09-03 |
2001-09-04 |
Micron Technology, Inc. |
Method for producing low carbon/oxygen conductive layers
|
US6239028B1
(en)
*
|
1998-09-03 |
2001-05-29 |
Micron Technology, Inc. |
Methods for forming iridium-containing films on substrates
|
US6323081B1
(en)
|
1998-09-03 |
2001-11-27 |
Micron Technology, Inc. |
Diffusion barrier layers and methods of forming same
|
DE19842704C2
(de)
|
1998-09-17 |
2002-03-28 |
Infineon Technologies Ag |
Herstellverfahren für einen Kondensator mit einem Hoch-epsilon-Dielektrikum oder einem Ferroelektrikum nach dem Fin-Stack-Prinzip unter Einsatz einer Negativform
|
US6204203B1
(en)
*
|
1998-10-14 |
2001-03-20 |
Applied Materials, Inc. |
Post deposition treatment of dielectric films for interface control
|
US6177305B1
(en)
|
1998-12-17 |
2001-01-23 |
Lsi Logic Corporation |
Fabrication of metal-insulator-metal capacitive structures
|
KR100293713B1
(ko)
*
|
1998-12-22 |
2001-07-12 |
박종섭 |
메모리소자의 커패시터 제조방법
|
US6235594B1
(en)
*
|
1999-01-13 |
2001-05-22 |
Agere Systems Guardian Corp. |
Methods of fabricating an integrated circuit device with composite oxide dielectric
|
US6290822B1
(en)
|
1999-01-26 |
2001-09-18 |
Agere Systems Guardian Corp. |
Sputtering method for forming dielectric films
|
US6387748B1
(en)
*
|
1999-02-16 |
2002-05-14 |
Micron Technology, Inc. |
Semiconductor circuit constructions, capacitor constructions, and methods of forming semiconductor circuit constructions and capacitor constructions
|
US6445023B1
(en)
*
|
1999-03-16 |
2002-09-03 |
Micron Technology, Inc. |
Mixed metal nitride and boride barrier layers
|
US6417041B1
(en)
*
|
1999-03-26 |
2002-07-09 |
Advanced Micro Devices, Inc. |
Method for fabricating high permitivity dielectric stacks having low buffer oxide
|
JP3473485B2
(ja)
*
|
1999-04-08 |
2003-12-02 |
日本電気株式会社 |
薄膜抵抗体およびその製造方法
|
US7022623B2
(en)
|
1999-04-22 |
2006-04-04 |
Micron Technology, Inc. |
Method of fabricating a semiconductor device with a dielectric film using a wet oxidation with steam process
|
US6329286B1
(en)
|
1999-04-27 |
2001-12-11 |
Micron Technology, Inc. |
Methods for forming conformal iridium layers on substrates
|
US6208009B1
(en)
|
1999-04-30 |
2001-03-27 |
Digital Devices, Inc. |
RC-networks in semiconductor devices and method therefor
|
US6281142B1
(en)
|
1999-06-04 |
2001-08-28 |
Micron Technology, Inc. |
Dielectric cure for reducing oxygen vacancies
|
US6046081A
(en)
*
|
1999-06-10 |
2000-04-04 |
United Microelectronics Corp. |
Method for forming dielectric layer of capacitor
|
KR100335775B1
(ko)
*
|
1999-06-25 |
2002-05-09 |
박종섭 |
반도체 소자의 캐패시터 제조 방법
|
US6465828B2
(en)
*
|
1999-07-30 |
2002-10-15 |
Micron Technology, Inc. |
Semiconductor container structure with diffusion barrier
|
EP1218928A1
(de)
*
|
1999-09-28 |
2002-07-03 |
Symetrix Corporation |
Halbleiteranordnungen mit barrierschichten und verfahren zur herstellung
|
US6475854B2
(en)
|
1999-12-30 |
2002-11-05 |
Applied Materials, Inc. |
Method of forming metal electrodes
|
US6417537B1
(en)
|
2000-01-18 |
2002-07-09 |
Micron Technology, Inc. |
Metal oxynitride capacitor barrier layer
|
US7005695B1
(en)
|
2000-02-23 |
2006-02-28 |
Micron Technology, Inc. |
Integrated circuitry including a capacitor with an amorphous and a crystalline high K capacitor dielectric region
|
JP3437832B2
(ja)
*
|
2000-03-22 |
2003-08-18 |
東京エレクトロン株式会社 |
成膜方法及び成膜装置
|
US6476432B1
(en)
|
2000-03-23 |
2002-11-05 |
Micron Technology, Inc. |
Structures and methods for enhancing capacitors in integrated circuits
|
US6507063B2
(en)
|
2000-04-17 |
2003-01-14 |
International Business Machines Corporation |
Poly-poly/MOS capacitor having a gate encapsulating first electrode layer
|
US6579783B2
(en)
|
2000-07-07 |
2003-06-17 |
Applied Materials, Inc. |
Method for high temperature metal deposition for reducing lateral silicidation
|
US6825522B1
(en)
*
|
2000-07-13 |
2004-11-30 |
Micron Technology, Inc. |
Capacitor electrode having an interface layer of different chemical composition formed on a bulk layer
|
US6461931B1
(en)
|
2000-08-29 |
2002-10-08 |
Micron Technology, Inc. |
Thin dielectric films for DRAM storage capacitors
|
US6576964B1
(en)
|
2000-08-31 |
2003-06-10 |
Micron Technology, Inc. |
Dielectric layer for a semiconductor device having less current leakage and increased capacitance
|
US6410968B1
(en)
*
|
2000-08-31 |
2002-06-25 |
Micron Technology, Inc. |
Semiconductor device with barrier layer
|
US6373087B1
(en)
*
|
2000-08-31 |
2002-04-16 |
Agere Systems Guardian Corp. |
Methods of fabricating a metal-oxide-metal capacitor and associated apparatuses
|
US6521544B1
(en)
*
|
2000-08-31 |
2003-02-18 |
Micron Technology, Inc. |
Method of forming an ultra thin dielectric film
|
US6660631B1
(en)
*
|
2000-08-31 |
2003-12-09 |
Micron Technology, Inc. |
Devices containing platinum-iridium films and methods of preparing such films and devices
|
US6682969B1
(en)
*
|
2000-08-31 |
2004-01-27 |
Micron Technology, Inc. |
Top electrode in a strongly oxidizing environment
|
US7378719B2
(en)
*
|
2000-12-20 |
2008-05-27 |
Micron Technology, Inc. |
Low leakage MIM capacitor
|
US7037730B2
(en)
|
2001-07-11 |
2006-05-02 |
Micron Technology, Inc. |
Capacitor with high dielectric constant materials and method of making
|
US6727140B2
(en)
|
2001-07-11 |
2004-04-27 |
Micron Technology, Inc. |
Capacitor with high dielectric constant materials and method of making
|
US6495428B1
(en)
|
2001-07-11 |
2002-12-17 |
Micron Technology, Inc. |
Method of making a capacitor with oxygenated metal electrodes and high dielectric constant materials
|
US20030029715A1
(en)
|
2001-07-25 |
2003-02-13 |
Applied Materials, Inc. |
An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
|
US20090004850A1
(en)
|
2001-07-25 |
2009-01-01 |
Seshadri Ganguli |
Process for forming cobalt and cobalt silicide materials in tungsten contact applications
|
US8110489B2
(en)
|
2001-07-25 |
2012-02-07 |
Applied Materials, Inc. |
Process for forming cobalt-containing materials
|
JP2005504885A
(ja)
|
2001-07-25 |
2005-02-17 |
アプライド マテリアルズ インコーポレイテッド |
新規なスパッタ堆積方法を使用したバリア形成
|
US9051641B2
(en)
|
2001-07-25 |
2015-06-09 |
Applied Materials, Inc. |
Cobalt deposition on barrier surfaces
|
US7129128B2
(en)
*
|
2001-08-29 |
2006-10-31 |
Micron Technology, Inc. |
Method of improved high K dielectric-polysilicon interface for CMOS devices
|
EP2249413A3
(de)
*
|
2002-04-01 |
2011-02-02 |
Konica Corporation |
Träger und organisches elektrolumineszentes Bauelement mit einem solchen Träger
|
DE10216614B4
(de)
*
|
2002-04-15 |
2004-06-17 |
Infineon Technologies Ag |
Verfahren zur Verstärkung einer dielektrischen Schicht auf einem Halbleitersubstrat an Fehlstellen und Anordnung mit einer verstärkten dielektrischen Schicht
|
KR100465631B1
(ko)
*
|
2002-12-11 |
2005-01-13 |
주식회사 하이닉스반도체 |
반도체 소자의 캐패시터 형성방법
|
US7385954B2
(en)
*
|
2003-07-16 |
2008-06-10 |
Lucent Technologies Inc. |
Method of transmitting or retransmitting packets in a communication system
|
US7256980B2
(en)
*
|
2003-12-30 |
2007-08-14 |
Du Pont |
Thin film capacitors on ceramic
|
DE112005003768A5
(de)
*
|
2005-12-09 |
2009-02-19 |
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. |
Dünnfilmwiderstand mit Schichtstruktur und Verfahren zur Herstllunng eines Dünnfilmwiderstands mit Schichtstruktur
|
TWI274379B
(en)
*
|
2005-12-26 |
2007-02-21 |
Ind Tech Res Inst |
MIM capacitor structure and method of manufacturing the same
|
WO2009090979A1
(ja)
*
|
2008-01-18 |
2009-07-23 |
Tokyo Electron Limited |
キャパシタ、半導体装置、およびこれらの作製方法
|