WO2000060135A3 - Verfahren zur herstellung dünner, schwer löslicher beschichtungen - Google Patents

Verfahren zur herstellung dünner, schwer löslicher beschichtungen Download PDF

Info

Publication number
WO2000060135A3
WO2000060135A3 PCT/DE2000/001173 DE0001173W WO0060135A3 WO 2000060135 A3 WO2000060135 A3 WO 2000060135A3 DE 0001173 W DE0001173 W DE 0001173W WO 0060135 A3 WO0060135 A3 WO 0060135A3
Authority
WO
WIPO (PCT)
Prior art keywords
layers
layer
reactant gas
application
ceramic
Prior art date
Application number
PCT/DE2000/001173
Other languages
English (en)
French (fr)
Other versions
WO2000060135A2 (de
Inventor
Christian-Herbert Fischer
Hans-Juergen Muffler
Martha Christina Lux-Steiner
Original Assignee
Hahn Meitner Inst Berlin Gmbh
Fischer Christian Herbert
Muffler Hans Juergen
Lux Steiner Martha Christina
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hahn Meitner Inst Berlin Gmbh, Fischer Christian Herbert, Muffler Hans Juergen, Lux Steiner Martha Christina filed Critical Hahn Meitner Inst Berlin Gmbh
Priority to CA002367342A priority Critical patent/CA2367342A1/en
Priority to EP00934914A priority patent/EP1169492B1/de
Priority to KR1020017012681A priority patent/KR20010113877A/ko
Priority to HU0200790A priority patent/HU222653B1/hu
Priority to DK00934914T priority patent/DK1169492T3/da
Priority to DE50000568T priority patent/DE50000568D1/de
Priority to JP2000609623A priority patent/JP4275319B2/ja
Priority to AU50600/00A priority patent/AU757674B2/en
Priority to PL350799A priority patent/PL193049B1/pl
Priority to AT00934914T priority patent/ATE224965T1/de
Priority to SI200030030T priority patent/SI1169492T1/xx
Priority to US09/958,443 priority patent/US8158204B1/en
Publication of WO2000060135A2 publication Critical patent/WO2000060135A2/de
Publication of WO2000060135A3 publication Critical patent/WO2000060135A3/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/80—After-treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S501/00—Compositions: ceramic
    • Y10S501/90—Optical glass, e.g. silent on refractive index and/or ABBE number
    • Y10S501/906—Thorium oxide containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Photovoltaic Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Pyridine Compounds (AREA)
  • Polysaccharides And Polysaccharide Derivatives (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Medicinal Preparation (AREA)

Abstract

Die Herstellung von stabilen Oberflächenbeschichtungen kann durch Sputtern, Aufdampfen, Badabscheidung oder MOCVD erfolgen. Nicht immer ist hierbei die Erzielung homogener und auch innere Oberflächen erreichender Schichten gewährleistet. Bei den erfindungsgemäßen Verfahren ist zur Herstellung keramischer oder oxidischer Schichten (CL/OL) auf Substraten (S) deshalb vorgesehen, dass nach dem Aufbringen (I) und Trocknen (II) einer geeigneten Ausgangssubstanz (P) die gebildete Ausgangssubstanz-Schicht (PLD) mit einem feuchten Reaktantgas (RG) zur Umwandlung in eine entsprechende Hydroxid- oder Komplex-Schicht (HL) begast (III) und danach zur Bildung einer keramischen oder oxidischen Schicht (CL/OL) thermisch behandelt wird (IV). Zur alternativen Herstellung anderer chalkogenidischer Schichten mit erhöhtem Stoffumsatz erfolgt eine zusätzliche Begasung mit einem chalkogenwasserstoffhaltigen Reaktantgas . Metallische Schichten können alternativ unter Einsatz eines reduzierend wirkenden Reaktantgases erzeugt werden. Anwendung finden die erfindungsgemäßen Verfahren überall dort, wo es um Schutz und Modifikation von Oberflächen, auch mit beschatteten Strukturen, sowie um das Aufbringen funktionaler Schichten geht, insbesondere in der Solar- und Werkstofftechnik.
PCT/DE2000/001173 1999-04-06 2000-04-06 Verfahren zur herstellung dünner, schwer löslicher beschichtungen WO2000060135A2 (de)

Priority Applications (12)

Application Number Priority Date Filing Date Title
CA002367342A CA2367342A1 (en) 1999-04-06 2000-04-06 Method of producing thin, poorly soluble coatings
EP00934914A EP1169492B1 (de) 1999-04-06 2000-04-06 Verfahren zur herstellung dünner, schwer löslicher beschichtungen
KR1020017012681A KR20010113877A (ko) 1999-04-06 2000-04-06 잘 녹지 않는 얇은 코팅층 제조 방법
HU0200790A HU222653B1 (hu) 1999-04-06 2000-04-06 Eljárás vékony, nehezen oldható bevonatok elżállítására
DK00934914T DK1169492T3 (da) 1999-04-06 2000-04-06 Method of producing thin, poorly soluble coatings
DE50000568T DE50000568D1 (de) 1999-04-06 2000-04-06 Verfahren zur herstellung dünner, schwer löslicher beschichtungen
JP2000609623A JP4275319B2 (ja) 1999-04-06 2000-04-06 薄い、難溶性の被覆の製造方法
AU50600/00A AU757674B2 (en) 1999-04-06 2000-04-06 Method of producing thin, poorly soluble coatings
PL350799A PL193049B1 (pl) 1999-04-06 2000-04-06 Sposób wytwarzania cienkich, trudno rozpuszczalnych warstw powłokowych
AT00934914T ATE224965T1 (de) 1999-04-06 2000-04-06 Verfahren zur herstellung dünner, schwer löslicher beschichtungen
SI200030030T SI1169492T1 (en) 1999-04-06 2000-04-06 Method of producing thin, poorly soluble coatings
US09/958,443 US8158204B1 (en) 1999-04-06 2000-04-06 Method of producing thin, poorly soluble coatings

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19916403.7 1999-04-06
DE19916403A DE19916403C1 (de) 1999-04-06 1999-04-06 Verfahren zur Herstellung dünner, schwer löslicher Beschichtungen

Publications (2)

Publication Number Publication Date
WO2000060135A2 WO2000060135A2 (de) 2000-10-12
WO2000060135A3 true WO2000060135A3 (de) 2001-04-19

Family

ID=7904248

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/001173 WO2000060135A2 (de) 1999-04-06 2000-04-06 Verfahren zur herstellung dünner, schwer löslicher beschichtungen

Country Status (16)

Country Link
US (1) US8158204B1 (de)
EP (1) EP1169492B1 (de)
JP (2) JP4275319B2 (de)
KR (1) KR20010113877A (de)
CN (1) CN1268786C (de)
AT (1) ATE224965T1 (de)
AU (1) AU757674B2 (de)
CA (1) CA2367342A1 (de)
DE (2) DE19916403C1 (de)
DK (1) DK1169492T3 (de)
ES (1) ES2183798T3 (de)
HU (1) HU222653B1 (de)
PL (1) PL193049B1 (de)
PT (1) PT1169492E (de)
RU (1) RU2250932C2 (de)
WO (1) WO2000060135A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10142913B4 (de) 2001-08-27 2004-03-18 Hahn-Meitner-Institut Berlin Gmbh Vertikale Transistoranordnung mit einem flexiblen, aus Kunststofffolien bestehenden Substrat und Verfahren zu deren Herstellung
DE10160504C2 (de) * 2001-11-30 2003-11-13 Hahn Meitner Inst Berlin Gmbh Verfahren zur Herstellung dünner, schwer löslicher Beschichtungen
DE10258727A1 (de) * 2002-12-05 2004-06-24 Schott Glas Ofen
DE10339824B4 (de) * 2003-08-24 2005-07-07 Hahn-Meitner-Institut Berlin Gmbh Beschichtungsverfahren zur Deposition und Fixierung von Partikeln auf einer Substratoberfläche und Solarzellen mit funkionellem Schichtenaufbau
KR100863932B1 (ko) * 2007-07-10 2008-11-18 주식회사 코미코 세라믹 용사 코팅층의 수화 처리 방법과, 이를 이용한정전척 제조 방법 그리고 상기 수화 처리 방법에 형성된세라믹 용사 코팅층을 갖는 기판 구조물 및 정전척
DE102008017077B4 (de) 2008-04-01 2011-08-11 Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109 Verfahren zur Herstellung einer n-halbleitenden Indiumsulfid-Dünnschicht
DE102009037371B3 (de) * 2009-08-13 2011-03-17 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Beschichtungsvorrichtung mit Ultraschallzerstäuber
CN103489962B (zh) * 2013-10-07 2017-01-04 复旦大学 大面积制备半导体量子点的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242374A (en) * 1979-04-19 1980-12-30 Exxon Research & Engineering Co. Process for thin film deposition of metal and mixed metal chalcogenides displaying semi-conductor properties
EP0580019A1 (de) * 1992-07-08 1994-01-26 Yeda Research And Development Company, Ltd. Orientisch polykristalline dünne Filme aus Übergangsmetallchalcogeniden
WO1999048158A1 (de) * 1998-03-19 1999-09-23 Hahn-Meitner-Institut Berlin Gmbh Verfahren und anordnung zur herstellung dünner metallchalkogenid-schichten

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63103886A (ja) * 1986-10-21 1988-05-09 日本碍子株式会社 メタライズペ−ストならびにそれを使用してなるセラミツクスのメタライズ法
US5106828A (en) * 1987-07-20 1992-04-21 North American Philips Corporation Method for fabricating superconductors by sol-gel process
JP2535790B2 (ja) * 1994-09-08 1996-09-18 工業技術院長 タングステンブロンズおよびその被覆複合体の製造方法
US5686368A (en) * 1995-12-13 1997-11-11 Quantum Group, Inc. Fibrous metal oxide textiles for spectral emitters
JPH10128115A (ja) * 1996-11-01 1998-05-19 Cosmo Sogo Kenkyusho:Kk 担持貴金属触媒およびその製造方法
DE19831214C2 (de) * 1998-03-19 2003-07-03 Hahn Meitner Inst Berlin Gmbh Verfahren und Anordnung zur Herstellung dünner Metallchalkogenid-Schichten

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242374A (en) * 1979-04-19 1980-12-30 Exxon Research & Engineering Co. Process for thin film deposition of metal and mixed metal chalcogenides displaying semi-conductor properties
EP0580019A1 (de) * 1992-07-08 1994-01-26 Yeda Research And Development Company, Ltd. Orientisch polykristalline dünne Filme aus Übergangsmetallchalcogeniden
WO1999048158A1 (de) * 1998-03-19 1999-09-23 Hahn-Meitner-Institut Berlin Gmbh Verfahren und anordnung zur herstellung dünner metallchalkogenid-schichten

Also Published As

Publication number Publication date
DE50000568D1 (de) 2002-10-31
DE19916403C1 (de) 2000-10-12
KR20010113877A (ko) 2001-12-28
AU5060000A (en) 2000-10-23
PT1169492E (pt) 2003-02-28
PL193049B1 (pl) 2007-01-31
WO2000060135A2 (de) 2000-10-12
CN1346412A (zh) 2002-04-24
CN1268786C (zh) 2006-08-09
JP4275319B2 (ja) 2009-06-10
ATE224965T1 (de) 2002-10-15
JP2003530284A (ja) 2003-10-14
PL350799A1 (en) 2003-02-10
US8158204B1 (en) 2012-04-17
ES2183798T3 (es) 2003-04-01
JP2009084153A (ja) 2009-04-23
RU2250932C2 (ru) 2005-04-27
EP1169492A2 (de) 2002-01-09
HUP0200790A2 (en) 2002-07-29
CA2367342A1 (en) 2000-10-12
DK1169492T3 (da) 2003-02-03
HU222653B1 (hu) 2003-09-29
AU757674B2 (en) 2003-02-27
EP1169492B1 (de) 2002-09-25

Similar Documents

Publication Publication Date Title
WO2002020864A3 (en) System and method for depositing high dielectric constant materials and compatible conductive materials
DK0966409T3 (da) Fotokatalytisk aktiveret selvrensende artikel og fremgangsmåde til dens fremstilling
WO2005060632A3 (en) High-throughput ex-situ method for rare-earth-barium-copper-oxide (rebco) film growth
WO2006057709A3 (en) Method for deposition of metal layers from metal carbonyl precursors
CA2577304A1 (en) Atmospheric pressure chemical vapor deposition
EP1323846A3 (de) Verfahren zum Herstellen metallischer Beschichtungen aus flüssigen Lösungen mittels eines kalten Plasmas
EP1132493A3 (de) Verfahren zur Abscheidung aus der Dampfphase von organischen Komponenten und zur Verfeinerung von organischen Komponenten
Peng et al. Metalorganic chemical vapor deposition of ferroelectric Pb (Zr, Ti) O3 thin films
Lee et al. Deposition temperature dependence of titanium oxide thin films grown by remote‐plasma atomic layer deposition
WO2000060135A3 (de) Verfahren zur herstellung dünner, schwer löslicher beschichtungen
Choi The fabrication of tin oxide films by atomic layer deposition using tetrakis (ethylmethylamino) tin precursor
MX2010013869A (es) Espejo y proceso para obtener un espejo.
CN101017793A (zh) 一种扩散阻挡层的制作方法
WO2000034549A3 (en) Cvd process using bi alcoxides
RU2014146776A (ru) НАНЕСЕННОЕ ЭЛЕКТРОДУГОВЫМ НАПЫЛЕНИЕМ ПОКРЫТИЕ Al-Cr-O, СОДЕРЖАЩЕЕ Si, ИМЕЮЩЕЕ УЛУЧШЕННУЮ КРОЮЩУЮ СПОСОБНОСТЬ
Suh et al. Chemical vapor deposition of gallium sulfide thin films
CN100460561C (zh) 二氧化钛薄膜材料的超亲水驱油表面制备方法
Yuan et al. Low-temperature chemical vapor deposition of ruthenium dioxide from ruthenium tetroxide: a simple approach to high-purity RuO2 films
CN208562158U (zh) 具有防指纹功能的抗菌玻璃
EP0214024B1 (de) Zinnoxydschicht, Verfahren zur Beschichtung und so beschichtetes Substrat
Porporati et al. Metallorganic chemical vapor deposition of Ta2O5 films
EP3476971A3 (de) Silacyclische verbindungen und verfahren zur abscheidung von siliciumhaltigen filmen unter verwendung davon
RU2001130044A (ru) Способ изготовления тонких, труднорастворимых покрытий (варианты)
TW200633019A (en) Low-pressure deposition of ruthenium and rhenium metal layers from metal-carbonyl precursors
KR100243267B1 (ko) 반도체소자의박막형성방법및그박막을갖춘반도체소자

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 00805960.8

Country of ref document: CN

AK Designated states

Kind code of ref document: A2

Designated state(s): AE AL AM AT AU AZ BA BB BG BR BY CA CH CN CR CU CZ DK DM EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AK Designated states

Kind code of ref document: A3

Designated state(s): AE AL AM AT AU AZ BA BB BG BR BY CA CH CN CR CU CZ DK DM EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): GH GM KE LS MW SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

ENP Entry into the national phase

Ref document number: 2000 609623

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 1020017012681

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 09958443

Country of ref document: US

ENP Entry into the national phase

Ref document number: 2367342

Country of ref document: CA

Ref document number: 2367342

Country of ref document: CA

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 50600/00

Country of ref document: AU

WWE Wipo information: entry into national phase

Ref document number: IN/PCT/2001/1137/KOL

Country of ref document: IN

WWE Wipo information: entry into national phase

Ref document number: 2000934914

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020017012681

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2000934914

Country of ref document: EP

WWG Wipo information: grant in national office

Ref document number: 2000934914

Country of ref document: EP

WWG Wipo information: grant in national office

Ref document number: 50600/00

Country of ref document: AU

WWG Wipo information: grant in national office

Ref document number: 1020017012681

Country of ref document: KR