JP2009084153A - 薄い、難溶性の被覆の製造方法 - Google Patents
薄い、難溶性の被覆の製造方法 Download PDFInfo
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- JP2009084153A JP2009084153A JP2009000038A JP2009000038A JP2009084153A JP 2009084153 A JP2009084153 A JP 2009084153A JP 2009000038 A JP2009000038 A JP 2009000038A JP 2009000038 A JP2009000038 A JP 2009000038A JP 2009084153 A JP2009084153 A JP 2009084153A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/10—Oxidising
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/02—Pretreatment of the material to be coated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/80—After-treatment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S501/00—Compositions: ceramic
- Y10S501/90—Optical glass, e.g. silent on refractive index and/or ABBE number
- Y10S501/906—Thorium oxide containing
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Abstract
【解決手段】金属層を製造するために、所望の層厚に依存して循環的に実施すべき以下の処理工程:基板表面に層を形成するために、少なくとも1種の適当な出発物質を被覆する工程、形成された出発物質層を、不活性ガス流中でまたは蒸発により乾燥する工程、金属層を形成するために、乾燥した出発物質層を、湿った、還元作用する反応物質ガスでガス処理する工程、および未反応の出発成分または好ましくない副生成物を除去するために、形成された金属層を熱処理する工程工程を有する、任意の形状の基板上に薄い、難溶性の被覆を製造する方法。
【選択図】なし
Description
Technische Keramik B.Htier 編、Vulkan Verlag Essen 1988、2〜25頁 Laser annealing of zinc oxide thin film deposited by spray−CVD)」G.K.Bhaumik等、Elsevier Materials Science and Engineering B52(1988)25−31 Optical and electrical properties of undoped ZnO films grown by spray pyrolyse of zinc nitrate solution)」 S.A.Studeniki等、J.of Appl.Phys.Vol83、No4、1998年2月15日,2104−11 Use of a helicon wave excited plasma of aluminium−doped ZnO thin−film sputtering、K.ヤマヤ等、Appl.Phys.Lett.72(2)、1998年1月12日、235−37 Plasma assisted molecular beam epitaxy of ZnO on c−plane sapphire:Growth and characterisation Y.Chen等、J.of Appl.Phys.Vol84、No7、1998年10月1日、3912−18 Preparation Of ZnO Films By Electrodeposition From Aqueous Solution S.Peulon等、13th Europ.Photovoltaic Solar Energy Conference 1995年10月23−27日、Nice France1750−52 Microstructure of TiO2 and ZnO Films Fabricated by the Sol−Gel−Methode Y.オオヤ等、J.Am.Ceram.Soc.79[4]825−30(1996) Chemical Bath Deposition CBD ZnO/CdS/CIS/Mo−Strukturen:Effects of Cd−Free Buffer Layer For CuInSe2 Thin Solar Cells T.Nii等、First WCPEC:1994年12月5−9日、ハワイ、254−57 「エータ太陽電池のきわめて薄い吸収体としてのCuInS2(CuInS2 as an extremely thin absorber in an eta solar cell)」J.Moeller等(Conference Proceedings of the 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion、1998年6月6−10日、209−211頁、XP002110735 Vienna)
I.基板表面に層を形成するために、少なくとも1種の適当な出発物質を被覆する工程、
II.形成された出発物質層を、不活性ガス流中でまたは蒸発により乾燥する工程、
III.相当する水酸化物層または錯体層に変換するために、乾燥した出発物質層を、湿った反応物質ガス(RG)でガス処理する工程、
IV.それぞれの最終層を形成するために、形成された水酸化物層または錯体層(HL)を熱処理する工程、および
引き続き未反応の出発成分または好ましくない副生成物の発生に依存して、
V.これらを除去するために洗浄し、引き続き乾燥する工程
を有する任意の形状の基板上に薄い、難溶性の被覆を製造する方法が提供される。
・ほどよい、問題のない処理パラメータ、真空を使用しないことによる低い費用
・処理パラメータの変動に対する強さ
・進行すべきサイクルの数による簡単な層厚の調節
・製造される層の高い再現可能性
・任意の表面を有する基板の均一な被覆
・陰影のある内部表面の被覆
・出発物質の完全な利用および
・簡単な自動化可能性。
Claims (7)
- 金属層を製造するために、所望の層厚に依存して循環的に実施すべき以下の処理工程:
I.基板表面(S)に層を形成するために、少なくとも1種の適当な出発物質(P)を被覆する工程、
II.形成された出発物質層(PL)を、不活性ガス流(GS)中でまたは蒸発により乾燥する工程、
III. 金属層を形成するために、乾燥した出発物質層(PLD)を、湿った、還元作用する反応物質ガス(RG)でガス処理する工程、および
IV. 未反応の出発成分または好ましくない副生成物を除去するために、形成された金属層を熱処理する工程工程
を有する、任意の形状の基板(S)上に薄い、難溶性の被覆を製造する方法。 - それぞれの層を形成後に、層を別に加熱することによりまたは層を形成する際に処理温度(TP)を高めることにより熱処理(IV)を行う請求項1記載の方法。
- 少なくとも1種の出発物質(P)を、溶液として有利には揮発しやすい溶剤と一緒に予め入れ、基板(S)上の溶液の被覆を浸漬(LB)または噴霧により行う請求項1または2記載の方法。
- 出発物質(P)が塩である請求項1から3までのいずれか1項記載の方法。
- 湿った反応物質ガス(RG)が、有利には塩基性の反応ガスまたは気体の水である請求項1から4までのいずれか1項記載の方法。
- 出発物質(P)が種々の化合物の混合物である請求項1から5までのいずれか1項記載の方法。
- 種々の出発物質(P)を個々の処理サイクルに、特に繰り返しの順序に使用する請求項1から6までのいずれか1項記載の方法。
Applications Claiming Priority (1)
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DE19916403A DE19916403C1 (de) | 1999-04-06 | 1999-04-06 | Verfahren zur Herstellung dünner, schwer löslicher Beschichtungen |
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JP2000609623A Division JP4275319B2 (ja) | 1999-04-06 | 2000-04-06 | 薄い、難溶性の被覆の製造方法 |
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JP2009084153A true JP2009084153A (ja) | 2009-04-23 |
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JP2000609623A Expired - Fee Related JP4275319B2 (ja) | 1999-04-06 | 2000-04-06 | 薄い、難溶性の被覆の製造方法 |
JP2009000038A Pending JP2009084153A (ja) | 1999-04-06 | 2009-01-05 | 薄い、難溶性の被覆の製造方法 |
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US (1) | US8158204B1 (ja) |
EP (1) | EP1169492B1 (ja) |
JP (2) | JP4275319B2 (ja) |
KR (1) | KR20010113877A (ja) |
CN (1) | CN1268786C (ja) |
AT (1) | ATE224965T1 (ja) |
AU (1) | AU757674B2 (ja) |
CA (1) | CA2367342A1 (ja) |
DE (2) | DE19916403C1 (ja) |
DK (1) | DK1169492T3 (ja) |
ES (1) | ES2183798T3 (ja) |
HU (1) | HU222653B1 (ja) |
PL (1) | PL193049B1 (ja) |
PT (1) | PT1169492E (ja) |
RU (1) | RU2250932C2 (ja) |
WO (1) | WO2000060135A2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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DE10142913B4 (de) | 2001-08-27 | 2004-03-18 | Hahn-Meitner-Institut Berlin Gmbh | Vertikale Transistoranordnung mit einem flexiblen, aus Kunststofffolien bestehenden Substrat und Verfahren zu deren Herstellung |
DE10160504C2 (de) * | 2001-11-30 | 2003-11-13 | Hahn Meitner Inst Berlin Gmbh | Verfahren zur Herstellung dünner, schwer löslicher Beschichtungen |
DE10258727A1 (de) * | 2002-12-05 | 2004-06-24 | Schott Glas | Ofen |
DE10339824B4 (de) * | 2003-08-24 | 2005-07-07 | Hahn-Meitner-Institut Berlin Gmbh | Beschichtungsverfahren zur Deposition und Fixierung von Partikeln auf einer Substratoberfläche und Solarzellen mit funkionellem Schichtenaufbau |
KR100863932B1 (ko) * | 2007-07-10 | 2008-11-18 | 주식회사 코미코 | 세라믹 용사 코팅층의 수화 처리 방법과, 이를 이용한정전척 제조 방법 그리고 상기 수화 처리 방법에 형성된세라믹 용사 코팅층을 갖는 기판 구조물 및 정전척 |
DE102008017077B4 (de) | 2008-04-01 | 2011-08-11 | Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109 | Verfahren zur Herstellung einer n-halbleitenden Indiumsulfid-Dünnschicht |
DE102009037371B3 (de) * | 2009-08-13 | 2011-03-17 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Beschichtungsvorrichtung mit Ultraschallzerstäuber |
CN103489962B (zh) * | 2013-10-07 | 2017-01-04 | 复旦大学 | 大面积制备半导体量子点的方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55140705A (en) * | 1979-04-19 | 1980-11-04 | Exxon Research Engineering Co | Formation of metal or mixed metal chalcogenide film |
JPS63103886A (ja) * | 1986-10-21 | 1988-05-09 | 日本碍子株式会社 | メタライズペ−ストならびにそれを使用してなるセラミツクスのメタライズ法 |
JPH0873223A (ja) * | 1994-09-08 | 1996-03-19 | Agency Of Ind Science & Technol | タングステンブロンズおよびその被覆複合体の製造方法 |
JPH10128115A (ja) * | 1996-11-01 | 1998-05-19 | Cosmo Sogo Kenkyusho:Kk | 担持貴金属触媒およびその製造方法 |
WO1999048158A1 (de) * | 1998-03-19 | 1999-09-23 | Hahn-Meitner-Institut Berlin Gmbh | Verfahren und anordnung zur herstellung dünner metallchalkogenid-schichten |
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US5106828A (en) * | 1987-07-20 | 1992-04-21 | North American Philips Corporation | Method for fabricating superconductors by sol-gel process |
DE69325055T2 (de) | 1992-07-08 | 2000-03-09 | Yeda Res & Dev | Orientierte polykristalline dünne Filme aus Übergangsmetallchalcogeniden |
US5686368A (en) * | 1995-12-13 | 1997-11-11 | Quantum Group, Inc. | Fibrous metal oxide textiles for spectral emitters |
DE19831214C2 (de) * | 1998-03-19 | 2003-07-03 | Hahn Meitner Inst Berlin Gmbh | Verfahren und Anordnung zur Herstellung dünner Metallchalkogenid-Schichten |
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1999
- 1999-04-06 DE DE19916403A patent/DE19916403C1/de not_active Expired - Fee Related
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2000
- 2000-04-06 WO PCT/DE2000/001173 patent/WO2000060135A2/de active IP Right Grant
- 2000-04-06 HU HU0200790A patent/HU222653B1/hu not_active IP Right Cessation
- 2000-04-06 AT AT00934914T patent/ATE224965T1/de not_active IP Right Cessation
- 2000-04-06 DE DE50000568T patent/DE50000568D1/de not_active Expired - Lifetime
- 2000-04-06 CA CA002367342A patent/CA2367342A1/en not_active Abandoned
- 2000-04-06 PL PL350799A patent/PL193049B1/pl not_active IP Right Cessation
- 2000-04-06 AU AU50600/00A patent/AU757674B2/en not_active Ceased
- 2000-04-06 JP JP2000609623A patent/JP4275319B2/ja not_active Expired - Fee Related
- 2000-04-06 CN CNB008059608A patent/CN1268786C/zh not_active Expired - Fee Related
- 2000-04-06 US US09/958,443 patent/US8158204B1/en not_active Expired - Fee Related
- 2000-04-06 PT PT00934914T patent/PT1169492E/pt unknown
- 2000-04-06 DK DK00934914T patent/DK1169492T3/da active
- 2000-04-06 EP EP00934914A patent/EP1169492B1/de not_active Expired - Lifetime
- 2000-04-06 KR KR1020017012681A patent/KR20010113877A/ko active IP Right Grant
- 2000-04-06 ES ES00934914T patent/ES2183798T3/es not_active Expired - Lifetime
- 2000-04-06 RU RU2001130044/02A patent/RU2250932C2/ru not_active IP Right Cessation
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2009
- 2009-01-05 JP JP2009000038A patent/JP2009084153A/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55140705A (en) * | 1979-04-19 | 1980-11-04 | Exxon Research Engineering Co | Formation of metal or mixed metal chalcogenide film |
JPS63103886A (ja) * | 1986-10-21 | 1988-05-09 | 日本碍子株式会社 | メタライズペ−ストならびにそれを使用してなるセラミツクスのメタライズ法 |
JPH0873223A (ja) * | 1994-09-08 | 1996-03-19 | Agency Of Ind Science & Technol | タングステンブロンズおよびその被覆複合体の製造方法 |
JPH10128115A (ja) * | 1996-11-01 | 1998-05-19 | Cosmo Sogo Kenkyusho:Kk | 担持貴金属触媒およびその製造方法 |
WO1999048158A1 (de) * | 1998-03-19 | 1999-09-23 | Hahn-Meitner-Institut Berlin Gmbh | Verfahren und anordnung zur herstellung dünner metallchalkogenid-schichten |
Also Published As
Publication number | Publication date |
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WO2000060135A2 (de) | 2000-10-12 |
PL193049B1 (pl) | 2007-01-31 |
DK1169492T3 (da) | 2003-02-03 |
AU757674B2 (en) | 2003-02-27 |
JP4275319B2 (ja) | 2009-06-10 |
RU2250932C2 (ru) | 2005-04-27 |
ATE224965T1 (de) | 2002-10-15 |
DE19916403C1 (de) | 2000-10-12 |
DE50000568D1 (de) | 2002-10-31 |
ES2183798T3 (es) | 2003-04-01 |
EP1169492B1 (de) | 2002-09-25 |
CN1346412A (zh) | 2002-04-24 |
US8158204B1 (en) | 2012-04-17 |
AU5060000A (en) | 2000-10-23 |
HUP0200790A2 (en) | 2002-07-29 |
PL350799A1 (en) | 2003-02-10 |
EP1169492A2 (de) | 2002-01-09 |
PT1169492E (pt) | 2003-02-28 |
JP2003530284A (ja) | 2003-10-14 |
CA2367342A1 (en) | 2000-10-12 |
KR20010113877A (ko) | 2001-12-28 |
CN1268786C (zh) | 2006-08-09 |
HU222653B1 (hu) | 2003-09-29 |
WO2000060135A3 (de) | 2001-04-19 |
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