ATE224965T1 - Verfahren zur herstellung dünner, schwer löslicher beschichtungen - Google Patents
Verfahren zur herstellung dünner, schwer löslicher beschichtungenInfo
- Publication number
- ATE224965T1 ATE224965T1 AT00934914T AT00934914T ATE224965T1 AT E224965 T1 ATE224965 T1 AT E224965T1 AT 00934914 T AT00934914 T AT 00934914T AT 00934914 T AT00934914 T AT 00934914T AT E224965 T1 ATE224965 T1 AT E224965T1
- Authority
- AT
- Austria
- Prior art keywords
- layers
- reactant gas
- layer
- oxidic
- poorly soluble
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/10—Oxidising
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/80—After-treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S501/00—Compositions: ceramic
- Y10S501/90—Optical glass, e.g. silent on refractive index and/or ABBE number
- Y10S501/906—Thorium oxide containing
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Photovoltaic Devices (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Polysaccharides And Polysaccharide Derivatives (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Pyridine Compounds (AREA)
- Medicinal Preparation (AREA)
- Chemical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19916403A DE19916403C1 (de) | 1999-04-06 | 1999-04-06 | Verfahren zur Herstellung dünner, schwer löslicher Beschichtungen |
PCT/DE2000/001173 WO2000060135A2 (de) | 1999-04-06 | 2000-04-06 | Verfahren zur herstellung dünner, schwer löslicher beschichtungen |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE224965T1 true ATE224965T1 (de) | 2002-10-15 |
Family
ID=7904248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT00934914T ATE224965T1 (de) | 1999-04-06 | 2000-04-06 | Verfahren zur herstellung dünner, schwer löslicher beschichtungen |
Country Status (16)
Country | Link |
---|---|
US (1) | US8158204B1 (de) |
EP (1) | EP1169492B1 (de) |
JP (2) | JP4275319B2 (de) |
KR (1) | KR20010113877A (de) |
CN (1) | CN1268786C (de) |
AT (1) | ATE224965T1 (de) |
AU (1) | AU757674B2 (de) |
CA (1) | CA2367342A1 (de) |
DE (2) | DE19916403C1 (de) |
DK (1) | DK1169492T3 (de) |
ES (1) | ES2183798T3 (de) |
HU (1) | HU222653B1 (de) |
PL (1) | PL193049B1 (de) |
PT (1) | PT1169492E (de) |
RU (1) | RU2250932C2 (de) |
WO (1) | WO2000060135A2 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10142913B4 (de) | 2001-08-27 | 2004-03-18 | Hahn-Meitner-Institut Berlin Gmbh | Vertikale Transistoranordnung mit einem flexiblen, aus Kunststofffolien bestehenden Substrat und Verfahren zu deren Herstellung |
DE10160504C2 (de) * | 2001-11-30 | 2003-11-13 | Hahn Meitner Inst Berlin Gmbh | Verfahren zur Herstellung dünner, schwer löslicher Beschichtungen |
DE10258727A1 (de) * | 2002-12-05 | 2004-06-24 | Schott Glas | Ofen |
DE10339824B4 (de) * | 2003-08-24 | 2005-07-07 | Hahn-Meitner-Institut Berlin Gmbh | Beschichtungsverfahren zur Deposition und Fixierung von Partikeln auf einer Substratoberfläche und Solarzellen mit funkionellem Schichtenaufbau |
KR100863932B1 (ko) * | 2007-07-10 | 2008-11-18 | 주식회사 코미코 | 세라믹 용사 코팅층의 수화 처리 방법과, 이를 이용한정전척 제조 방법 그리고 상기 수화 처리 방법에 형성된세라믹 용사 코팅층을 갖는 기판 구조물 및 정전척 |
DE102008017077B4 (de) | 2008-04-01 | 2011-08-11 | Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109 | Verfahren zur Herstellung einer n-halbleitenden Indiumsulfid-Dünnschicht |
DE102009037371B3 (de) * | 2009-08-13 | 2011-03-17 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Beschichtungsvorrichtung mit Ultraschallzerstäuber |
CN103489962B (zh) * | 2013-10-07 | 2017-01-04 | 复旦大学 | 大面积制备半导体量子点的方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4242374A (en) | 1979-04-19 | 1980-12-30 | Exxon Research & Engineering Co. | Process for thin film deposition of metal and mixed metal chalcogenides displaying semi-conductor properties |
JPS63103886A (ja) * | 1986-10-21 | 1988-05-09 | 日本碍子株式会社 | メタライズペ−ストならびにそれを使用してなるセラミツクスのメタライズ法 |
US5106828A (en) * | 1987-07-20 | 1992-04-21 | North American Philips Corporation | Method for fabricating superconductors by sol-gel process |
ES2135427T3 (es) | 1992-07-08 | 1999-11-01 | Yeda Res & Dev | Peliculas finas y orientadas policristalinas de calgogenuros de un metal de transicion. |
JP2535790B2 (ja) * | 1994-09-08 | 1996-09-18 | 工業技術院長 | タングステンブロンズおよびその被覆複合体の製造方法 |
US5686368A (en) * | 1995-12-13 | 1997-11-11 | Quantum Group, Inc. | Fibrous metal oxide textiles for spectral emitters |
JPH10128115A (ja) * | 1996-11-01 | 1998-05-19 | Cosmo Sogo Kenkyusho:Kk | 担持貴金属触媒およびその製造方法 |
ES2292241T3 (es) * | 1998-03-19 | 2008-03-01 | Hahn-Meitner-Institut Berlin Gesellschaft Mit Beschrankter Haftung | Procedimiento y disposicion para la produccion de delgadas capas de calcogenuros metalicos. |
DE19831214C2 (de) * | 1998-03-19 | 2003-07-03 | Hahn Meitner Inst Berlin Gmbh | Verfahren und Anordnung zur Herstellung dünner Metallchalkogenid-Schichten |
-
1999
- 1999-04-06 DE DE19916403A patent/DE19916403C1/de not_active Expired - Fee Related
-
2000
- 2000-04-06 RU RU2001130044/02A patent/RU2250932C2/ru not_active IP Right Cessation
- 2000-04-06 JP JP2000609623A patent/JP4275319B2/ja not_active Expired - Fee Related
- 2000-04-06 AT AT00934914T patent/ATE224965T1/de not_active IP Right Cessation
- 2000-04-06 WO PCT/DE2000/001173 patent/WO2000060135A2/de active IP Right Grant
- 2000-04-06 EP EP00934914A patent/EP1169492B1/de not_active Expired - Lifetime
- 2000-04-06 AU AU50600/00A patent/AU757674B2/en not_active Ceased
- 2000-04-06 DE DE50000568T patent/DE50000568D1/de not_active Expired - Lifetime
- 2000-04-06 US US09/958,443 patent/US8158204B1/en not_active Expired - Fee Related
- 2000-04-06 DK DK00934914T patent/DK1169492T3/da active
- 2000-04-06 HU HU0200790A patent/HU222653B1/hu not_active IP Right Cessation
- 2000-04-06 KR KR1020017012681A patent/KR20010113877A/ko active IP Right Grant
- 2000-04-06 PL PL350799A patent/PL193049B1/pl not_active IP Right Cessation
- 2000-04-06 PT PT00934914T patent/PT1169492E/pt unknown
- 2000-04-06 CN CNB008059608A patent/CN1268786C/zh not_active Expired - Fee Related
- 2000-04-06 ES ES00934914T patent/ES2183798T3/es not_active Expired - Lifetime
- 2000-04-06 CA CA002367342A patent/CA2367342A1/en not_active Abandoned
-
2009
- 2009-01-05 JP JP2009000038A patent/JP2009084153A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR20010113877A (ko) | 2001-12-28 |
WO2000060135A3 (de) | 2001-04-19 |
PL350799A1 (en) | 2003-02-10 |
DE50000568D1 (de) | 2002-10-31 |
CA2367342A1 (en) | 2000-10-12 |
JP2003530284A (ja) | 2003-10-14 |
EP1169492B1 (de) | 2002-09-25 |
JP2009084153A (ja) | 2009-04-23 |
ES2183798T3 (es) | 2003-04-01 |
DK1169492T3 (da) | 2003-02-03 |
CN1346412A (zh) | 2002-04-24 |
AU757674B2 (en) | 2003-02-27 |
JP4275319B2 (ja) | 2009-06-10 |
HUP0200790A2 (en) | 2002-07-29 |
CN1268786C (zh) | 2006-08-09 |
AU5060000A (en) | 2000-10-23 |
EP1169492A2 (de) | 2002-01-09 |
WO2000060135A2 (de) | 2000-10-12 |
PT1169492E (pt) | 2003-02-28 |
HU222653B1 (hu) | 2003-09-29 |
PL193049B1 (pl) | 2007-01-31 |
RU2250932C2 (ru) | 2005-04-27 |
DE19916403C1 (de) | 2000-10-12 |
US8158204B1 (en) | 2012-04-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Battiston et al. | PECVD of amorphous TiO2 thin films: effect of growth temperature and plasma gas composition | |
ATE326558T1 (de) | Verfahren zur herstellung poröser keramik-metall verbundwerkstoffe und dadurch erhaltene verbundwerkstoffe | |
WO2008048862A3 (en) | Formation of high quality dielectric films of silicon dioxide for sti: usage of different siloxane-based precursors for harp ii - remote plasma enhanced deposition processes | |
AU5589699A (en) | Capacitors comprising roughened platinum layers, methods of forming roughened layers of platinum and methods of forming capacitors | |
TW376545B (en) | Method of producing silicon layer having surface controlling to be even | |
DE60233418D1 (de) | Verfahren zur grosstechnischen herstellung von cdte/cds dünnschicht-solarzellen | |
WO2008073767A3 (en) | Methods of filling a set of interstitial spaces of a nanoparticle thin film with a dielectric material | |
WO2005121397A3 (en) | Controlled vapor deposition of multilayered coatings adhered by an oxide layer | |
DE69811640D1 (de) | Photokatalytisch aktiviertes selbstreinigender artikel und verfahren zu dessen herstellung | |
AU2003290815A1 (en) | Atomic layer deposition methods | |
WO2004109821A3 (en) | Reactive deposition for electrochemical cell production | |
TW200710956A (en) | Method to improve transmittance of an encapsulating film | |
DE60118164D1 (de) | Oberflächenbehandeltes, elektrisch leitfähiges metallteil und verfahren zur herstellung desselben | |
TW200619421A (en) | Process chamber component with layered coating and method | |
EP1063196A3 (de) | Kohlenstoffhaltige komplexe Struktur und deren Herstellungsverfahren | |
WO2005060632A3 (en) | High-throughput ex-situ method for rare-earth-barium-copper-oxide (rebco) film growth | |
ATE224965T1 (de) | Verfahren zur herstellung dünner, schwer löslicher beschichtungen | |
TW200737246A (en) | Solid electrolyte capacitor and production method thereof | |
US9281420B2 (en) | Chemical vapor deposited film formed by plasma CVD method | |
TW334580B (en) | Method of manufacture semiconductor device | |
DE60210337D1 (de) | Verfahren zur herstellung eines films aus kohlenstoffdotiertem oxid | |
TW200512311A (en) | Methods of depositing materials over substrates, and methods of forming layers over substrates | |
WO2007130448A3 (en) | Method of depositing zinc oxide coatings on a substrate | |
WO2003086958A3 (de) | Verfahren zur herstellung eines erzeugnisses mit einer strukturierten oberfläche | |
ATE499458T1 (de) | Verfahren zur herstellung einer porösen sioch- schicht |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
REN | Ceased due to non-payment of the annual fee |