DE69325055T2 - Orientierte polykristalline dünne Filme aus Übergangsmetallchalcogeniden - Google Patents

Orientierte polykristalline dünne Filme aus Übergangsmetallchalcogeniden

Info

Publication number
DE69325055T2
DE69325055T2 DE69325055T DE69325055T DE69325055T2 DE 69325055 T2 DE69325055 T2 DE 69325055T2 DE 69325055 T DE69325055 T DE 69325055T DE 69325055 T DE69325055 T DE 69325055T DE 69325055 T2 DE69325055 T2 DE 69325055T2
Authority
DE
Germany
Prior art keywords
transition metal
thin films
films made
polycrystalline thin
metal chalcogenides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69325055T
Other languages
English (en)
Other versions
DE69325055D1 (de
Inventor
Reshef Tenne
Gary Hodes
Lev Margulis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yeda Research and Development Co Ltd
Original Assignee
Yeda Research and Development Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from IL10244092A external-priority patent/IL102440A/en
Priority claimed from IL104513A external-priority patent/IL104513A0/xx
Application filed by Yeda Research and Development Co Ltd filed Critical Yeda Research and Development Co Ltd
Application granted granted Critical
Publication of DE69325055D1 publication Critical patent/DE69325055D1/de
Publication of DE69325055T2 publication Critical patent/DE69325055T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C23C14/5813—Thermal treatment using lasers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C23C14/5833—Ion beam bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5866—Treatment with sulfur, selenium or tellurium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
DE69325055T 1992-07-08 1993-07-07 Orientierte polykristalline dünne Filme aus Übergangsmetallchalcogeniden Expired - Lifetime DE69325055T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IL10244092A IL102440A (en) 1992-07-08 1992-07-08 Oriented polycrystalline thin films and fullerene-like structures of transition metal chalcogenides
IL104513A IL104513A0 (en) 1993-01-26 1993-01-26 Oriented polycrystalline thin films or transition metal chalcogenides

Publications (2)

Publication Number Publication Date
DE69325055D1 DE69325055D1 (de) 1999-07-01
DE69325055T2 true DE69325055T2 (de) 2000-03-09

Family

ID=26322475

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69325055T Expired - Lifetime DE69325055T2 (de) 1992-07-08 1993-07-07 Orientierte polykristalline dünne Filme aus Übergangsmetallchalcogeniden

Country Status (4)

Country Link
EP (1) EP0580019B1 (de)
JP (1) JP3302108B2 (de)
DE (1) DE69325055T2 (de)
ES (1) ES2135427T3 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008051520A1 (de) * 2008-10-13 2010-04-22 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Verfahren zur Erzeugung einer (001)-texturierten Kristallschicht aus einem photoaktiven Schichtgitter-Halbleiter auf einer metallisch leitfähigen Schicht unter Beteiligung eines Metallpromoters

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL118378A0 (en) * 1996-05-22 1996-09-12 Yeda Res & Dev Method and apparatus for preparing inorganic fullerene-like nanoparticles of transition metal chalcogenides having predetermined size and shape
IL119719A0 (en) 1996-11-29 1997-02-18 Yeda Res & Dev Inorganic fullerene-like structures of metal chalcogenides
CH690720A5 (de) 1996-12-18 2000-12-29 Eidgenoess Tech Hochschule Nanotubes, Verwendung solcher Nanotubes sowie Verfahren zu deren Herstellung.
US6528171B1 (en) 1999-03-03 2003-03-04 Widia Gmbh Tool with a molybdenum sulfide containing coating and method for its production
DE19916403C1 (de) * 1999-04-06 2000-10-12 Hahn Meitner Inst Berlin Gmbh Verfahren zur Herstellung dünner, schwer löslicher Beschichtungen
IL129718A0 (en) 1999-05-02 2000-02-29 Yeda Res & Dev Synthesis of nanotubes of transition metal chalcogenides
GB2360790A (en) * 2000-03-28 2001-10-03 Gehan Anil Joseph Amaratunga Low friction coatings produced by cathodic arc evaporation
EP1486582A1 (de) * 2003-06-13 2004-12-15 Asulab S.A. Mikromechanisches Bauelement mit geringer Reibung
KR101354910B1 (ko) * 2005-04-07 2014-01-22 에이.와이.와이.티. 테크놀로지컬 어플리케이션즈 앤드 데이타 업데이트 리미티드 무기 풀러렌-유사 나노입자의 제조 공정 및 제조장치
AU2006248559B2 (en) * 2005-05-17 2012-10-11 Hadasit Medical Research Services & Development Ltd. Low friction coatings for use in dental and medical devices
FR2949786B1 (fr) 2009-09-10 2013-07-05 Total Raffinage Marketing Composition de graisse.
KR101500944B1 (ko) 2013-03-22 2015-03-10 경희대학교 산학협력단 칼코겐 화합물의 2차원 대면적 성장 방법, cmos형 구조체의 제조 방법, 칼코겐 화합물의 막, 칼코겐 화합물의 막을 포함하는 전자 소자 및 cmos형 구조체
KR101464173B1 (ko) * 2013-07-23 2014-11-21 영남대학교 산학협력단 전이금속 칼코겐화합물 박막 형성 방법
KR101638221B1 (ko) 2013-09-02 2016-07-20 서울대학교산학협력단 전하 밀도파 특성 물질을 이용한 온도센서
WO2015102006A1 (en) 2014-01-06 2015-07-09 Yeda Research And Development Co. Ltd. Attenuation of encrustation of medical devices using coatings of inorganic fullerene-like nanoparticles
KR101503735B1 (ko) * 2014-01-20 2015-03-19 연세대학교 산학협력단 원자층 증착법으로 증착된 금속 산화물을 이용한 금속 황화물 합성 방법
US9781838B2 (en) 2014-02-24 2017-10-03 Industry-Academic Cooperation Foundation, Yonsei University Gas sensor and method of manufacturing the same
KR101503438B1 (ko) 2014-02-24 2015-03-18 연세대학교 산학협력단 가스 센서 제조 방법 및 그를 이용하여 제조된 가스 센서
FR3018079B1 (fr) 2014-02-28 2017-06-23 Total Marketing Services Composition lubrifiante a base de nanoparticules metalliques
KR101738214B1 (ko) * 2014-06-17 2017-05-30 한양대학교 산학협력단 2차원 주석 구조체 및 그 제조 방법
EP3023390B1 (de) * 2014-11-18 2019-04-10 IMEC vzw MoS2-Film-Bildung und -Übertragung in einem Substrat
CN104846428B (zh) * 2015-04-13 2017-04-05 山东大学 一种金属助熔剂法生长过渡金属硫属化合物晶体的方法
US10079144B2 (en) 2015-04-22 2018-09-18 Samsung Electronics Co., Ltd. Composition for layered transition metal chalcogenide compound layer and method of forming layered transition metal chalcogenide compound layer
CN109115764B (zh) * 2018-07-30 2021-06-15 深圳瑞达生物股份有限公司 环保型尿液羟苯衍生物检测试剂及其制备方法
KR102301846B1 (ko) * 2018-12-12 2021-09-15 한국세라믹기술원 전이금속 칼코겐화합물 박막의 제조 방법 및 이를 이용한 전자소자의 제조 방법
EP4080549A4 (de) * 2019-12-17 2023-07-26 Resonac Corporation Verfahren zur herstellung einer passivierungsfolie
CN111514916A (zh) * 2020-05-12 2020-08-11 刘志国 一种制备氮掺杂钼基硫族化合物电解水析氢催化材料的方法
CN113235049A (zh) * 2021-04-27 2021-08-10 清华-伯克利深圳学院筹备办公室 一种过渡金属硫化物薄膜及其制备方法和应用
WO2023230668A1 (en) * 2022-06-02 2023-12-07 Monash University Transition metal di-chalcogenides

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008051520A1 (de) * 2008-10-13 2010-04-22 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Verfahren zur Erzeugung einer (001)-texturierten Kristallschicht aus einem photoaktiven Schichtgitter-Halbleiter auf einer metallisch leitfähigen Schicht unter Beteiligung eines Metallpromoters

Also Published As

Publication number Publication date
EP0580019B1 (de) 1999-05-26
ES2135427T3 (es) 1999-11-01
DE69325055D1 (de) 1999-07-01
JPH0769782A (ja) 1995-03-14
JP3302108B2 (ja) 2002-07-15
EP0580019A1 (de) 1994-01-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8381 Inventor (new situation)

Inventor name: TENNE, RESHEF, 76231 REHOVOT, IL

Inventor name: HODES, GARY, 73270 GEZER, IL

Inventor name: MARGULIS, LEV, 76381 REHOVOT, IL

Inventor name: GENUT, DR., MENACHEM, GIVATAIM, IL