WO2009090979A1 - キャパシタ、半導体装置、およびこれらの作製方法 - Google Patents
キャパシタ、半導体装置、およびこれらの作製方法 Download PDFInfo
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- WO2009090979A1 WO2009090979A1 PCT/JP2009/050425 JP2009050425W WO2009090979A1 WO 2009090979 A1 WO2009090979 A1 WO 2009090979A1 JP 2009050425 W JP2009050425 W JP 2009050425W WO 2009090979 A1 WO2009090979 A1 WO 2009090979A1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
Definitions
- the present invention relates to a capacitor, a semiconductor device, and a manufacturing method thereof, and more particularly to a capacitor having both high capacity and low leakage current, a semiconductor device including the capacitor, and a manufacturing method thereof.
- the capacitance (C) of a capacitor is C ⁇ ⁇ S / t Equation (1)
- ⁇ is expressed by dielectric constant
- S is area
- t is dielectric layer thickness
- fF femtofarads
- the dielectric film layer may be made of a dielectric material having a high dielectric constant ⁇ because the microfabrication technology may not be able to sufficiently cope with further miniaturization in the future.
- a capacitance such as zirconium oxide (ZrO 2 ) has been used to increase the capacitance.
- metals are being adopted as electrode materials combined with these dielectric materials in place of conventional polycrystalline silicon. This is because when a metal oxide such as STO is deposited on polycrystalline silicon, the surface of the polycrystalline silicon is oxidized to form a silicon dioxide film, and the dielectric constant is substantially reduced. From the viewpoint of the capacitor structure, the MIS type (Metal-Insulator-Silicon) is changing to the MIM type (Metal-Insulator-Metal). Japanese Patent Laid-Open No.
- leakage current An important property along with capacitance in a capacitor is leakage current.
- the target specification of leakage current per unit area is generally said to be 1 ⁇ 10 ⁇ 8 to 1 ⁇ 10 ⁇ 7 A / cm 2 , but the charge accumulated in the capacitor is the leakage of the capacitor itself, the junction leakage It is lost through various leak paths such as gate leak and transistor off leak.
- alpha rays ( ⁇ rays) existing in the atmosphere hit the device, electrons and holes are generated in the Si substrate, and charges are lost due to the electrons and holes.
- the leakage of the capacitor itself is mainly caused by a current I1 caused by carriers over the barrier and a current I2 flowing through a trap (impurity level) in the dielectric film.
- a current I1 caused by carriers over the barrier
- a current I2 flowing through a trap (impurity level) in the dielectric film In order to reduce the current I1, an attempt has been made to increase the barrier height H by forming an electrode from a metal having a large work function such as platinum (Pt) or ruthenium (Ru) (Non-patent Document 3).
- Pt platinum
- Ru ruthenium
- Eg energy band gap
- materials with a large Eg tend to have a low dielectric constant. Therefore, if the dielectric film is formed of a material having a large Eg in order to increase the barrier height H, it is difficult to secure the capacity, and if it is attempted to secure the capacity
- FIG. 5A and 5B are top views showing the arrangement of the cylinder type capacitor.
- FIG. 5A shows a case where the capacitors are arranged in a staggered manner
- FIG. 5B shows a case where the capacitors are arranged in a close-packed manner.
- the capacitor diameter 51 is 32 nm
- the distance 52 between the capacitors is about 45 nm in the case of FIG. 5A and about 32 nm in the case of FIG. 5B.
- FIG. 6 is a cross-sectional view of the capacitor whose top view is shown in FIG. 5A, but the distance 62 between the storage nodes 61 is only 45 nm.
- FIG. 7 is a diagram schematically showing the micro structure of the MIM capacitor. Since the metal is polycrystalline at room temperature, the surface of the electrode 74 becomes uneven as a result of each crystal grain being deposited in various directions. The dielectric oxide layer 73 formed thereon is also polycrystalline, and when the interface with the electrode 74 is uneven, a large number of grain boundaries are generated in the dielectric oxide layer 73. In some cases, the particle size may exceed 10 nm. If the thickness of the dielectric film is about 10 nm, a grain boundary penetrating the dielectric film may be generated, which may be a leakage current path. Therefore, if the dielectric film is made thinner, the capacity increases as can be seen from the equation (1), but the leakage current increases.
- two electrode layers, a crystalline dielectric material layer between the two electrode layers, and at least one of the two electrode layers and the crystalline dielectric material layer are interposed.
- a capacitor comprising an amorphous material layer is provided.
- the second aspect of the present invention includes two electrode layers, a crystalline dielectric material layer between the two electrode layers, and at least one of the two electrode layers and the crystalline dielectric material layer.
- a method of forming a capacitor comprising: an amorphous material layer comprising: a step of forming one of two electrode layers; a step of forming an amorphous material layer on one of the electrode layers; And a step of forming a crystalline dielectric material layer on the material layer.
- two electrode layers, a crystalline dielectric material layer between the two electrode layers, and at least one of the two electrode layers and the crystalline dielectric material layer are interposed.
- a semiconductor device including a capacitor including an amorphous material layer and an active element connected to the capacitor is provided.
- two electrode layers, a crystalline dielectric material layer between the two electrode layers, and at least one of the two electrode layers and the crystalline dielectric material layer are interposed.
- a method of manufacturing a semiconductor device including a capacitor including an amorphous material layer and an active element connected to the capacitor, the step of preparing a substrate on which the active element is formed, and two electrodes on the substrate A semiconductor device comprising: a step of forming one of the layers; a step of forming an amorphous material layer on the one electrode layer; and a step of forming a crystalline dielectric material layer on the amorphous material layer.
- a manufacturing method is provided.
- the amorphous material layer includes one or both of a first layer formed of a conductive material and a second layer formed of a dielectric material. It is.
- the first layer is preferably formed of a conductive material having a work function of 5 electron volts or more. Furthermore, it is advantageous if the crystalline dielectric material layer is formed of a metal oxide having a perovskite structure.
- a capacitor having a very small leakage current and a large capacity a semiconductor device including the capacitor, and a manufacturing method thereof are provided.
- FIG. 9 is a diagram (part 1) illustrating a manufacturing process of the capacitor illustrated in FIG. 8;
- FIG. 9 is a view (No. 2) showing a manufacturing step of the capacitor shown in FIG. 8;
- FIG. 9 is a view (No. 3) showing a manufacturing step of the capacitor shown in FIG. 8;
- FIG. 9 is a view (No. 4) showing a step of manufacturing the capacitor shown in FIG. 8;
- FIG. 9 is a view (No. 5) showing a step of manufacturing the capacitor shown in FIG. 8;
- FIG. 9 is a view (No. 6) showing a manufacturing step of the capacitor shown in FIG. 8;
- FIG. 9 is a view (No.).
- FIG. 9 is a view (No. 8) showing a manufacturing step of the capacitor shown in FIG. 8
- FIG. 9 is a view (No. 9) showing a manufacturing step of the capacitor shown in FIG. 8
- It is a schematic sectional drawing of the capacitor by the 2nd Embodiment of this invention.
- It is a schematic sectional drawing of the capacitor by the 3rd Embodiment of this invention.
- It is a figure which shows the voltage and leak current characteristic of the capacitor by embodiment of this invention.
- 1 is a schematic cross-sectional view of a memory device according to an embodiment of the present invention.
- FIG. 15B is an equivalent circuit of the memory element shown in FIG. 15A.
- FIG. 16 is a view (No. 1) showing a step of manufacturing the memory element shown in FIG. 15;
- FIG. 16 is a view (No. 2) showing a step of manufacturing the memory element shown in FIG. 15;
- Capacitor 83 Lower electrode layer 83a First electrode layer 83b Second electrode layer 84 Dielectric layer 84a First dielectric layer 84b Second dielectric layer 84c Third dielectric layer 85 Upper electrode Layer 85a third electrode layer 85b fourth electrode layer 150 memory element 151 FET
- FIG. 8 is a schematic cross-sectional view showing the capacitor according to the first embodiment of the present invention.
- the capacitor 80 according to the first embodiment includes a silicon substrate 81, an insulating layer 82 formed on the substrate 81, a lower electrode layer 83 formed on the insulator layer 82, and a lower electrode layer 83.
- An insulating portion 87 that covers the leak prevention layer 86 and a lead electrode 88 embedded in a contact hole 87 a formed in the insulating portion 87 are included.
- the insulating layer 82 is a silicon oxide film formed by thermally oxidizing the surface of the silicon substrate 81, but may be formed by a chemical vapor deposition method.
- the lower electrode layer 83 has a first electrode layer 83a and a second electrode layer 83b, as shown.
- the first electrode layer 83a is formed of a crystalline conductive material, and is formed of titanium nitride (TiN) in this embodiment.
- the second electrode layer 83b on the first electrode layer 83a is formed of an amorphous conductive material, and in this embodiment, is formed of silicon titanium nitride (TiSiN).
- An amorphous conductive material such as TiSiN can be formed by a vapor deposition method (chemical vapor deposition (CVD) method and physical vapor deposition (PVD) method) as described later, and has a good surface. It has flatness. Therefore, the second electrode layer 83 b can provide a flat deposition surface with respect to the dielectric layer formed thereon, and contributes to the planarization of the dielectric layer 84.
- the second electrode layer 83b is not limited to TiSiN, but may be formed of, for example, TiON, TaSiN, and RuMoC.
- the second electrode layer 83b may be formed using an amorphous conductive material such as an amorphous alloy of a metal and a nonmetal, an amorphous alloy of a metal and a metal, or a hydrogen-mixed metal.
- amorphous alloys of metal and non-metal include P-based Ni—P, Fe—P, Co—P, Pd—P, B-based Ni—B, Co—B, and C-based Cr—C. S-based Ni-S, Co-S, As-based Pd-As, and the like.
- metals and amorphous alloys of metals include, for example, W-based Ni—W, Co—W, Fe—W, Cr—W, Mo-based Ni—Mo, Co—Mo, Fe—Mo, and Cr. -Mo, Co-Ti, Fe-Cr, Co-Re, etc.
- hydrogen-mixed metal examples include Cr (-H), Ni (-H), Pd (-H), and the like. These are merely examples of the material forming the second electrode layer 83b, and may be a ternary metal-nonmetal amorphous alloy or a ternary metal-metal amorphous alloy. There may be.
- the second electrode layer 83b has a width narrower than the width of the first electrode layer 83a.
- the first electrode layer 83a has a wider width than the second electrode layer 83b for electrical connection with the extraction electrode 88.
- the dielectric layer 84 includes a first dielectric layer 84a, a second dielectric layer 84b, and a third dielectric layer 84c.
- the first dielectric layer 84a and the third dielectric layer 84c are made of an amorphous dielectric material, and are made of silicon nitride (SiN) in this embodiment.
- the amorphous dielectric material can be formed by a vapor deposition method to provide a flat surface.
- the first dielectric layer 84a and the third dielectric layer 84c are not limited to these instead of SiN.
- aluminum oxide (Al 2 O 3 ), zirconium oxide (ZrO 2 ), silicon oxide ( SiO 2) may be formed by other amorphous dielectric material, such as.
- SiN is preferable from the viewpoint that a high dielectric constant is required as the dielectric layer.
- the first dielectric layer 84a and the third dielectric layer 84c are formed of the same material, but may be formed of different materials. The advantage of being formed of the same material is that the same characteristics are exhibited regardless of which of the two extraction electrodes 88 is the positive electrode.
- the second dielectric layer 84b is formed of a crystalline dielectric material, and in this embodiment, strontium titanate (SrTiO 3). , Hereinafter referred to as STO).
- STO strontium titanate
- STO has a high dielectric constant of 100 to 130, and is suitable as a dielectric material for the capacitor 80.
- the second dielectric layer 84b is formed on the first dielectric layer 84a having a flat surface, the second dielectric layer 84b is derived from the interface with the first dielectric layer 84a. The unevenness to be reduced is reduced, and the grain boundary is reduced. Therefore, leakage current due to such irregularities and grain boundaries is reduced.
- STO is deposited by a vapor deposition method as described later, and the as-deposited film is amorphous but crystallizes by annealing, and exhibits a high dielectric constant as described above.
- the second dielectric layer 84b is not limited to STO instead of STO.
- BaSrTiO 3 , BaTiO 3 , PbZrO 3 , Bi 4 Ti 3 O 12 , ZrSiO 4 , Y 2 O 3 , HfO 2 , la 2 O 3, ZrO 2 / Al 2 O 3, Ta 2 O 5 may be formed of a dielectric material other crystalline such.
- the upper electrode layer 85 has a third electrode layer 85a and a fourth electrode layer 85b. Similar to the second electrode layer 83b, the third electrode layer 85a is formed of an amorphous conductive material, and is formed of TiSiN in this embodiment. Similar to the first electrode layer 83a, the fourth electrode layer 85b is formed of a crystalline conductive material, and is formed of titanium nitride (TiN) in the present embodiment. However, the third electrode layer 85a may be formed of an amorphous conductive material different from that of the second electrode layer 83b, and the fourth electrode layer 85b is different in crystalline conductivity from that of the first electrode layer 83a. It may be formed of a material.
- the second electrode layer 83b and the third electrode layer 85a are preferably formed using an amorphous conductive material having a work function of 5 electron electron volts or more.
- the barrier height generated between the dielectric layer 84 and the dielectric layer 84 can be increased, so that the leakage current can be reduced.
- a method for manufacturing the capacitor 80 according to the first embodiment will be described with reference to FIGS. 9A to 11C.
- a P-type silicon substrate 81 is prepared and heated to about 900 ° C. in an oxygen atmosphere using a thermal oxidation furnace to form an insulating layer (silicon oxide film) 82 (FIG. 9A).
- the film thickness of the silicon oxide film 82 may be about 100 nm.
- the silicon oxide film 82 may be formed by depositing SiO 2 on the silicon substrate 81 by a vapor deposition method without depending on the thermal oxidation of the silicon substrate 81.
- the silicon substrate 81 on which the silicon oxide film 82 is formed is carried into a sputtering apparatus, and sputtering is performed in an argon gas atmosphere of about 3 mTorr (0.4 Pa) to deposit a TiN film 830a having a thickness of about 50 nm.
- the TiN film 830a may be deposited not by sputtering but by thermal CVD. In this CVD method, for example, TiCl 4 and NH 3 may be used as raw materials, and the deposition temperature may be about 580 ° C.
- a TiSiN film 830b is deposited on the TiN film 830a by a sputtering apparatus in which a TiSiN target containing about 20% Si is installed.
- the thickness of the TiSiN film 830b may be about 5 nm.
- the surface flatness may be optimized by adjusting the film forming conditions including the Si content.
- the TiSiN film 830b may be deposited not by sputtering but by thermal CVD. In this CVD method, for example, TiCl 4 , NH 3 , and SiH 4 may be used as raw materials, and the deposition temperature may be about 520 ° C. Needless to say, the Si content in the TiSiN film 830b can be controlled by adjusting the supply amount of the raw material.
- the TiN film 830a and the TiSiN film 830b to be the lower electrode layer 83 are formed on the insulating layer 82 (FIG. 9B).
- the substrate 81 is carried into a high frequency sputtering apparatus, and the SiN film 840a is deposited on the TiSiN film 830b by a sputtering method using a SiN target.
- the pressure in the chamber is preferably set to about 3 mTorr (0.4 Pa). It is.
- the thickness of the deposited SiN film 840a may be about 2 nm.
- the SiN film 840a is amorphous and has good surface flatness.
- the SiN film 840a may be deposited not by sputtering but by thermal CVD.
- SiH 2 Cl 2 and NH 3 may be used as raw materials, and the deposition temperature may be about 680 ° C.
- an STO film 840b is deposited on the SiN film 840a by a high-frequency sputtering apparatus provided with an STO target.
- the deposited STO film 840b may have a thickness of about 4 nm.
- the STO film 840b may be deposited not by sputtering but by thermal CVD. In this CVD method, for example, Sr (DPM) 2 and Ti (OC 3 H 7 ) may be used as raw materials, and the deposition temperature may be about 300 ° C.
- the STO film 840b is amorphous as-deposited, annealing is subsequently performed for crystallization.
- the STO film 840b is crystallized and exhibits a high dielectric constant (about 100 to about 130).
- the SiN film 840c is deposited on the STO film 840b by the same deposition method as the SiN film 840a, that is, the sputtering method or the thermal CVD method.
- the SiN film 840a, the STO film 840b, and the SiN film 840c to be the dielectric layer 85 are obtained (FIG. 9C).
- the annealing for crystallization of the STO film 840b may be performed after the upper electrode film forming step described later is completed.
- the surface morphology of the STO film 840b may deteriorate due to crystallization of the STO film 840b.
- deterioration of the surface morphology may be reduced. Can do. Even if the surface morphology of the STO film 840b is deteriorated, the flatness at the interface between the STO film 840b and the SiN film 840a that is the underlying layer remains unchanged.
- the TiSiN film 850a is deposited by the same deposition method as the TiSiN film 830b, that is, the sputtering method or the thermal CVD method, and the TiN film 850b is deposited by the same deposition method as the TiN film 830a.
- the TiSiN film 850a and the TiN film 850b to be the upper electrode layer 85 are obtained (FIG. 10A).
- the films 850b, 850a, 840c, 840b, 840a, and 830b are formed by dry etching similar to the above. To leave the film 830a.
- the electrode layer 83, the dielectric layer 84, and the electrode layer 85 are formed (FIG. 10C).
- a leak prevention layer 86 is formed in order to prevent leaks that occur along the end surfaces of the electrode layer 83, the dielectric layer 84, and the electrode layer 85.
- a SiO 2 film is deposited on the substrate 81 on which the electrode layer 83, the dielectric layer 84, and the electrode layer 85 are formed by plasma CVD. This deposition can be performed with a normal parallel plate type plasma CVD apparatus.
- the gas supplied to the chamber of the plasma CVD apparatus may be a mixed gas of tetraethylorthosilicate (TEOS) gas and O 2 gas.
- the substrate temperature is preferably 400 ° C., and the pressure is preferably about 200 mTorr (26.7 Pa).
- the thickness of the deposited SiO 2 film may be about 20 nm.
- the SiO 2 film is etched back by reactive ion etching using C 3 F 8 gas to form a leak prevention layer 86 (FIG. 11A).
- a SiO 2 film 870 is deposited to a thickness of about 500 nm on the substrate 81 after the formation of the leak prevention layer 86 again using a plasma CVD apparatus (FIG. 11B).
- a resist mask for forming a contact hole pattern is formed on the SiO 2 film 870 by lithography using a positive resist solution, and the contact hole 87a is opened by reactive ion etching using C 3 F 8 gas.
- the insulating part 87 is formed by the above procedure (FIG. 11C).
- an aluminum film is deposited to a thickness of about 500 nm using a sputtering apparatus so as to fill the contact hole 87a, and the extraction electrode 88 is formed by lithography and dry etching, thereby completing the capacitor 80 shown in FIG.
- the capacitor 80 includes the first electrode layer 83a formed of a crystalline conductive material and the second electrode formed of a crystalline dielectric material.
- a second electrode layer 83b formed of an amorphous conductive material and having excellent surface flatness between the dielectric layer 84b and an amorphous dielectric material formed on the second electrode layer 83b.
- a first dielectric layer 84a having excellent surface flatness. For this reason, in the second dielectric layer 84b, irregularities derived from the underlying layer are reduced, the grain size is miniaturized, and the grain boundaries are reduced. Therefore, in the capacitor 80, a high capacity due to the high dielectric constant of the crystalline dielectric material, and a low leakage current due to the reduction in unevenness and the reduction in grain boundaries are realized.
- the lower electrode layer 83 includes the first electrode layer 83a formed of TiN separately from the second electrode layer 83b, and this is connected to the extraction electrode 88. Therefore, the contact resistance with the extraction electrode 88 can be reduced.
- FIG. 12 is a schematic cross-sectional view showing a capacitor according to the second embodiment.
- the capacitor 90 according to the second embodiment has layers corresponding to the first dielectric layer 84a and the third dielectric layer 84c of the capacitor 80 according to the first embodiment. This is different from the capacitor 80 in that the other points are the same.
- the dielectric layer 84 has only the second dielectric layer 84b formed of an amorphous dielectric material.
- the STO film is formed on the SiN film 840a using the high-frequency sputtering apparatus without depositing the SiN film 840a using the sputtering apparatus in the “dielectric film forming step”. It can be manufactured by depositing 840b and then performing the above-mentioned “upper electrode film forming step”.
- the dielectric layer 84 (84b) made of STO, which is a dielectric material is a second electrode layer 83b made of an amorphous conductive material (TiSiN) having excellent surface flatness. Since it is formed on the dielectric layer 84, unevenness derived from the interface with the second electrode layer 83 is reduced, the grain size is reduced, and the grain boundary is reduced. For this reason, also in the capacitor 90 according to the second embodiment, a high capacity due to the high dielectric constant of the crystalline dielectric material and a low leakage current due to a reduction in unevenness and a decrease in grain boundaries are realized.
- FIG. 13 is a schematic cross-sectional view showing a capacitor according to the third embodiment.
- the capacitor 91 according to the third embodiment has layers corresponding to the second electrode layer 83b and the third electrode layer 85a of the capacitor 80 according to the first embodiment. It is different from the capacitor 80 in that it is not, and is the same in other points.
- the lower electrode layer 83 has only the first electrode layer 83a formed of a crystalline conductive material
- the upper electrode layer 85 has a crystalline conductivity. Only the fourth electrode layer 85b formed of a material is included.
- the capacitor 91 having such a configuration is manufactured by omitting the deposition of the TiSiN film 830b and the deposition of the TiSiN film 850a using a sputtering apparatus in the method of manufacturing the capacitor 80 according to the first embodiment. Can do.
- the second dielectric layer 84b made of crystalline STO which is a dielectric material
- the capacitors 80, 90, and 91 used in the experiment were manufactured according to the method described above. However, for the purpose of comparison, the thickness of the dielectric layer 84 is the same in all capacitors. That is, in the capacitors 80 and 91 according to the first and third embodiments having the first and third dielectric layers 84a and 84c (amorphous dielectric material), the second dielectric layer 84b (STO) ) Was about 6 nm, and the entire thickness of the dielectric layer 84 was about 10 nm. On the other hand, in the capacitor 90 according to the second embodiment that does not include the first and third dielectric layers 84a and 84c (amorphous dielectric material), the second dielectric layer 84b (STO) The thickness was about 10 nm.
- a capacitor having a structure of TiN electrode layer (about 50 nm) / STO dielectric layer (about 10 nm) / TiN electrode layer (about 50 nm) was produced and measured together.
- the capacitor of this comparative example is different from the capacitors 80, 90, 91 according to the above-described embodiment in that it does not have an amorphous electrode layer or an amorphous dielectric layer.
- FIG. 14 is a graph showing the dependency of the leakage current on the applied voltage.
- a leak current of about 2 ⁇ 10 ⁇ 8 A / cm 2 flows when a voltage of 1 volt (V) is applied between both terminals, as indicated by a curve X in the figure. I understand.
- the leakage current is lower in the entire measured voltage range than the capacitor for comparison.
- the second electrode layer 83b and the second dielectric layer 84b (crystalline STO) formed thereon are formed by the second electrode layer 83b formed of an amorphous conductive material (TiSiN). This is probably because the interface between the surfaces became flat, the irregularities originating from this interface were reduced, and the grain boundaries were reduced.
- the first dielectric layer 84a (amorphous SiN) provides a flat deposition surface with respect to the second dielectric layer 84b (crystalline STO). Therefore, the unevenness
- a second reason for reducing the leakage current is that the energy band gap of SiN constituting the first dielectric layer 84a is as large as about 7 eV. That is, it can be considered that due to the large energy band gap, a high barrier height is formed between the electrode layer 83 and the leakage caused by the carriers moving over the barrier is reduced.
- the leakage current is further reduced as compared with the capacitor 90 as shown by the curve A in FIG.
- the capacitor 80 includes two amorphous material layers such as a second electrode layer 83b made of an amorphous conductive material (TiSiN) and a first dielectric layer 84a made of an amorphous dielectric material (SiN). Therefore, a flatter deposition surface can be provided for the second dielectric layer 84b (amorphous STO). In addition, there is an effect resulting from a high barrier height due to SiN. For this reason, it can be considered that the capacitor 80 according to the first embodiment has a lower leakage current.
- the effect of reducing the leakage current of the capacitors 80, 90, 91 according to the embodiment of the present invention was confirmed.
- the total thickness of the dielectric layer 84 is independent of the presence or absence of the first and third dielectric layers 84a, 84c. By setting the thickness to 10 nm or less, the capacity can be increased.
- a capacitor 80 in which the second electrode layer 83b made of an amorphous conductive material (TiSiN) is formed using a sputtering method and a capacitor 80 formed using a thermal CVD method are manufactured, and leakage current is produced.
- the leakage current was compared between the capacitor 80 in which the first electrode layer 83a (TiN) was formed using the sputtering method and the capacitor 80 formed using the thermal CVD method. There was no significant difference in leakage current.
- FIG. 15A is a schematic cross-sectional view showing a memory device according to the fourth embodiment
- FIG. 15B is an equivalent circuit of the memory device according to the fourth embodiment.
- a memory element 150 has a drain through a field effect transistor (FET) 151 (active element) having a gate electrode 151a, a source region 151b and a drain region 151c, and a plug 153 formed of polysilicon or the like.
- FET field effect transistor
- the capacitor 801 is connected to the region 151c at one end, the electrode 157 is connected to the other end of the capacitor 80 via a plug 156, and the electrode 158 is connected to the gate electrode 151a via a plug 155.
- the capacitor 801 is the capacitor 80 according to the first embodiment in the illustrated example, but may be the capacitors 90 and 91 according to the second or third embodiment.
- the electrode 157 is connected to the plate line, and the electrode 158 is connected to the word line (FIG. 15B).
- the source region 151b is connected to the bit line by a plug and an electrode (not shown).
- the memory element 150 can be manufactured as follows. First, as shown in FIG. 16A, a transistor 151 is formed on a silicon substrate 81 by any known IC manufacturing process, and an oxide film is deposited thereon by a CVD method to form an oxide layer 152. Next, as shown in FIG. 15B, a contact hole is formed in the oxide layer 152 by photolithography and etching, and the contact hole is filled with polysilicon, and then deposited on the surface of the oxide layer 152 by a chemical mechanical polishing (CMP) method. The plug 153 is formed by removing the formed polysilicon.
- CMP chemical mechanical polishing
- the “lower electrode film forming step”, “dielectric film forming step” and “upper electrode film forming step” described above are performed to obtain a multilayer film for forming the capacitor 801 (80).
- a capacitor 801 having a predetermined size is formed by photolithography and etching, and an oxide film is deposited on the oxide layer 152 by a CVD method so as to cover the capacitor 801.
- vias are formed in the oxide film to obtain an oxide layer 154, the vias are filled with a predetermined metal to form plugs 155 and 156, a metal film is deposited by, for example, sputtering, and electrodes are formed by photolithography and etching. 157 and 158 are formed.
- the memory element 150 is completed.
- the memory element 150 according to the fourth embodiment of the present invention includes the capacitor 80 (90, 91) according to the embodiment of the present invention, and thus a memory element having advantages such as high capacity and low leakage current can be obtained.
- the first electrode layer 83a TiN (crystalline)
- second electrode layer 83b TiSiN (amorphous)
- second dielectric layer 84b STO (crystalline)
- fourth electrode a layer formed of an amorphous material is provided on either side of the second dielectric layer 84b formed of a crystalline dielectric material. It only has to be. The layer formed of the amorphous material is formed prior to the second dielectric layer 84b during the manufacturing process.
- the capacitors 80, 90, 91 are formed as planar capacitors in which the electrodes 83, 85 and the dielectric layer 84 are formed in parallel to the substrate 81.
- it may be configured as a trench type capacitor or a stack type capacitor.
- the first electrode layer 83a may correspond to a plate electrode
- the second electrode layer 85b may correspond to a storage electrode.
- the second electrode layer 83b is formed not by depositing the TiSiN film 830b on the TiN film 830a but by depositing the TiSiN film 830b on the plate electrode (first electrode layer). Can do.
- the electrode layers 83 and 85 and the dielectric layer 84 are formed by using a sputtering apparatus.
- the present invention is not limited to this, and is formed by chemical vapor deposition (CVD). May be.
- CVD chemical vapor deposition
- the semiconductor device according to the present invention may be an analog device.
- a substrate on which not only an FET but also a bipolar transistor and other active elements are formed may be prepared.
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Abstract
Description
C∝ε・S/t・・・・・式(1)
ただし、ε:誘電率、S:面積、t:誘電体層厚
で表されるため、面積の減少は容量の低下につながる。ダイナミックランダムアクセスメモリ(DRAM)のキャパシタは、安定した動作の観点から、少なくとも25フェムトファラド(fF)程度の容量が必要とされており、これを維持するために、図1Aに示すトレンチ型セルや図1Bに示すスタック型セルが開発されている。これらによれば、基板面と平行な方向における面積の減少が基板面と垂直な方向における面積で補われるため、面積Sの低下、ひいては容量の低下が防止される。
83 下部電極層
83a 第1の電極層
83b 第2の電極層
84 誘電体層
84a 第1の誘電体層
84b 第2の誘電体層
84c 第3の誘電体層
85 上部電極層
85a 第3の電極層
85b 第4の電極層
150 メモリ素子
151 FET
添付の全図面中、同一または対応する部材または部品については、同一または対応する参照符号を付し、重複する説明を省略する。また、図面は、部材もしくは部品間または種々の層の厚さの間の相対比を示すことを目的とせず、したがって、具体的な厚さや寸法は、以下の限定的でない実施形態に照らし、当業者により決定されるべきものである。
図8は、本発明の第1の実施形態によるキャパシタを示す概略断面図である。図示のとおり、第1の実施形態によるキャパシタ80は、シリコン基板81と、基板81上に形成された絶縁層82と、絶縁体層82上に形成された下部電極層83と、下部電極層83上に形成された誘電体層84と、誘電体層84上に形成された上部電極層85と、上記の積層構造の側壁を覆うリーク防止層86と、上部電極層85の上面の一部とリーク防止層86を覆う絶縁部87と、絶縁部87に形成されたコンタクトホール87aに埋め込まれた引き出し電極88と、を含む。
(絶縁層形成工程)
まず、P型のシリコン基板81を用意し、熱酸化炉を用いて酸素雰囲気中で約900℃に加熱し、絶縁層(酸化シリコン膜)82を形成する(図9A)。酸化シリコン膜82の膜厚は、約100nmであってよい。ただし、酸化シリコン膜82は、シリコン基板81の熱酸化によらず、シリコン基板81上に気相堆積法によりSiO2を堆積することにより形成してもよい。
次に、酸化シリコン膜82が形成されたシリコン基板81をスパッタ装置に搬入し、約3mTorr(0.4Pa)のアルゴンガス雰囲気中でスパッタリングを行って膜厚50nm程度のTiN膜830aを堆積する。
なお、TiN膜830aは、スパッタ法でなく、熱CVD法により堆積しても良い。このCVD法においては、例えば、原料としてTiCl4とNH3を使用して良く、堆積温度は約580℃であって良い。
なお、TiSiN膜830bは、スパッタ法でなく、熱CVD法により堆積しても良い。このCVD法においては、例えば、原料としてTiCl4、NH3、およびSiH4使用して良く、堆積温度は約520℃であって良い。また、TiSiN膜830b中のSi含有量は、原料の供給量を調整することにより、制御できることは言うまでもない。
TiSiN膜830bの堆積後、基板81を高周波スパッタ装置に搬入し、TiSiN膜830b上にSiNターゲットを用いたスパッタ法によりSiN膜840aを堆積する。このスパッタ装置のチャンバ内には、ArガスとN2ガスの混合ガス(Ar:N2=70%:30%)を供給し、チャンバ内の圧力を約3mTorr(0.4Pa)に設定すると好適である。堆積するSiN膜840aの膜厚は、約2nmであってよい。SiN膜840aは、非晶質であり、良好な表面平坦性を有している。
なお、SiN膜840aは、スパッタ法でなく、熱CVD法により堆積してもよい。このCVD法においては、例えば、原料としてSiH2Cl2とNH3を使用して良く、堆積温度は約680℃であって良い。
なお、STO膜840bは、スパッタ法でなく、熱CVD法により堆積しても良い。このCVD法においては、例えば、原料としてSr(DPM)2とTi(OC3H7)を使用して良く、堆積温度は約300℃であって良い。
以上の手順により、誘電体層85となるSiN膜840a、STO膜840b、およびSiN膜840cが得られる(図9C)。
続けて、TiSiN膜830bと同じ堆積方法、すなわちスパッタ法または熱CVD法によって、TiSiN膜850aを堆積し、TiN膜830aと同じ堆積方法によって、TiN膜850bを堆積する。以上の手順により、上部電極層85となるTiSiN膜850aとTiN膜850bが得られる(図10A)。
次に、キャパシタ構造にするための微細加工を行う。TiN膜850b上に、ポジ型レジスト液を用いて約500μm角の矩形のレジスト膜を形成する。次いで、このレジスト膜をマスクとし、塩素(Cl2)ガスとArガスとの混合ガス(Cl2:Ar=80%:20%)を用いるドライエッチングによって、膜830a,830b,840a,840b,840c,850a,および850bをエッチングする。次に、残留しているレジスト膜を酸素プラズマアッシングによって除去し、図10Bに示すメサ部800を形成する。
続けて、本発明の第2の実施形態によるキャパシタについて説明する。
図12は、第2の実施形態によるキャパシタを示す概略断面図である。図8と対比すると明らかなように、第2の実施形態によるキャパシタ90は、第1の実施形態によるキャパシタ80の第1の誘電体層84aおよび第3の誘電体層84cに相当する層を有していない点で、キャパシタ80と相違し、その他の点で同一である。換言すると、第2の実施形態によるキャパシタ90においては、誘電体層84は、非晶質の誘電体材料で形成される第2の誘電体層84bのみを有している。
続けて、本発明の第3の実施形態によるキャパシタについて説明する。
図13は、第3の実施形態によるキャパシタを示す概略断面図である。図8と対比すると明らかなように、第3の実施形態によるキャパシタ91は、第1の実施形態によるキャパシタ80の第2の電極層83bおよび第3の電極層85aに相当する層を有していない点で、キャパシタ80と相違し、その他の点で同一である。換言すると、第3の実施形態によるキャパシタ91においては、下部電極層83は結晶質の導電性材料で形成される第1の電極層83aのみを有し、上部電極層85は結晶質の導電性材料で形成される第4の電極層85bのみを有している。
第1から第3の実施形態によるキャパシタ80,90,91におけるリーク電流の低減効果を確認するために実験を行った。以下に、その結果について説明する。
なお、本発明の実施形態によるキャパシタ80,90,91においてはリーク電流が低減されるため、第1および第3の誘電体層84a,84cの有無によらず、誘電体層84の全体の厚さを10nm以下とすることにより、容量を増加させることも可能である。
本発明の第1から第3の実施形態によるキャパシタ80,90,91は、DRAMなどのメモリデバイスやアナログデバイスを始めとする種々の半導体装置に好適に利用され得る。以下、そのような半導体装置の一例として、図15Aおよび15Bを参照しながら、本発明の第4の実施形態によるメモリ素子を説明する。図15Aは、第4の実施形態によるメモリ素子を示す概略断面図であり、図15Bは、第4の実施形態によるメモリ素子の等価回路である。
Claims (12)
- 2つの電極層と、
前記2つの電極層の間にある結晶質誘電体材料層と、
前記2つの電極層の少なくとも一方と前記結晶質誘電体材料層との間に介在する非晶質材料層と、
を備えるキャパシタ。 - 前記非晶質材料層が、導電性材料で形成される第1の層、および誘電体材料で形成される第2の層の一方または双方を含む、請求項1に記載のキャパシタ。
- 前記結晶質誘電体材料層が、ペロブスカイト構造を有する金属酸化物で形成される、請求項1または2に記載のキャパシタ。
- 2つの電極層と、前記2つの電極層の間にある結晶質誘電体材料層と、前記2つの電極層の少なくとも一方と前記結晶質誘電体材料層との間に介在する非晶質材料層と、を備えるキャパシタを形成する方法であって、
前記2つの電極層の一方を形成する工程と、
前記一方の電極層上に前記非晶質材料層を形成する工程と、
前記非晶質材料層上に前記結晶質誘電体材料層を形成する工程と、
を含む、キャパシタの作製方法。 - 前記非晶質材料層が、導電性材料で形成される第1の層、および誘電体材料で形成される第2の層の一方または双方を含む、請求項4に記載のキャパシタの作製方法。
- 前記結晶質誘電体材料層が、ペロブスカイト構造を有する金属酸化物で形成される、請求項4または5に記載のキャパシタの作製方法。
- 2つの電極層、前記2つの電極層の間にある結晶質誘電体材料層、および前記2つの電極層の少なくとも一方と前記結晶質誘電体材料層との間に介在する非晶質材料層、を含むキャパシタと、
前記キャパシタと接続される能動素子と、
を備える半導体装置。 - 前記非晶質材料層が、導電性材料で形成される第1の層、および誘電体材料で形成される第2の層の一方または双方を含む、請求項7に記載の半導体装置。
- 前記結晶質誘電体材料層が、ペロブスカイト構造を有する金属酸化物で形成される、請求項7または8に記載の半導体装置。
- 2つの電極層、前記2つの電極層の間にある結晶質誘電体材料層、および前記2つの電極層の少なくとも一方と前記結晶質誘電体材料層との間に介在する非晶質材料層、を備えるキャパシタと、該キャパシタに接続する能動素子とを含む半導体装置を作製する方法であって、
前記能動素子が形成された基板を用意する工程と、
前記基板上に前記2つの電極層の一方を形成する工程と、
前記一方の電極層上に前記非晶質材料層を形成する工程と、
前記非晶質材料層上に前記結晶質誘電体材料層を形成する工程と、
を含む、半導体装置の作製方法。 - 前記非晶質材料層が、導電性材料で形成される第1の層、および誘電体材料で形成される第2の層の一方または双方を含む、請求項10に記載の半導体装置の作製方法。
- 前記結晶質誘電体材料層が、ペロブスカイト構造を有する金属酸化物で形成される、請求項10または11に記載の半導体装置の作製方法。
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JP2009550031A JPWO2009090979A1 (ja) | 2008-01-18 | 2009-01-15 | キャパシタ、半導体装置、およびこれらの作製方法 |
CN2009801025588A CN101919044A (zh) | 2008-01-18 | 2009-01-15 | 电容器、半导体装置以及它们的制造方法 |
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KR (1) | KR20100084677A (ja) |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011228462A (ja) * | 2010-04-19 | 2011-11-10 | Taiyo Yuden Co Ltd | 薄膜キャパシタ |
US8283227B2 (en) | 2010-11-08 | 2012-10-09 | Elpida Memory, Inc. | Method for manufacturing semiconductor memory device |
Families Citing this family (5)
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US8129716B2 (en) * | 2010-03-18 | 2012-03-06 | National Tsing Hua University | OTFT and MIM capacitor using silk protein as dielectric material and methods for manufacturing the same |
CN103745828B (zh) * | 2013-11-25 | 2016-09-28 | 大连天壹电子有限公司 | 干式积层陶瓷电容器的漏电流特性改善方法 |
KR102494126B1 (ko) | 2016-04-26 | 2023-02-02 | 삼성전자주식회사 | 커패시터를 포함하는 반도체 소자 |
US20220181433A1 (en) * | 2020-12-09 | 2022-06-09 | Intel Corporation | Capacitors with built-in electric fields |
CN113410055B (zh) * | 2021-05-21 | 2022-10-25 | 嘉兴学院 | 一种低漏导高耐压固态电介质薄膜电容器及其制备方法 |
Citations (4)
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---|---|---|---|---|
JPH05347391A (ja) * | 1992-06-16 | 1993-12-27 | Seiko Epson Corp | 強誘電体記憶装置 |
JPH11509684A (ja) * | 1995-05-19 | 1999-08-24 | マイクロン テクノロジー,インク. | Ta▲下2▼O▲下5▼誘電体層の製造方法 |
JP2003282717A (ja) * | 2002-03-25 | 2003-10-03 | Fujitsu Ltd | 薄膜キャパシタ及びその製造方法 |
JP2007305654A (ja) * | 2006-05-09 | 2007-11-22 | Nec Corp | 半導体装置及びその製造方法 |
-
2009
- 2009-01-15 WO PCT/JP2009/050425 patent/WO2009090979A1/ja active Application Filing
- 2009-01-15 KR KR1020107011593A patent/KR20100084677A/ko not_active Application Discontinuation
- 2009-01-15 CN CN2009801025588A patent/CN101919044A/zh active Pending
- 2009-01-15 JP JP2009550031A patent/JPWO2009090979A1/ja not_active Withdrawn
- 2009-01-16 TW TW098101519A patent/TW200947671A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05347391A (ja) * | 1992-06-16 | 1993-12-27 | Seiko Epson Corp | 強誘電体記憶装置 |
JPH11509684A (ja) * | 1995-05-19 | 1999-08-24 | マイクロン テクノロジー,インク. | Ta▲下2▼O▲下5▼誘電体層の製造方法 |
JP2003282717A (ja) * | 2002-03-25 | 2003-10-03 | Fujitsu Ltd | 薄膜キャパシタ及びその製造方法 |
JP2007305654A (ja) * | 2006-05-09 | 2007-11-22 | Nec Corp | 半導体装置及びその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011228462A (ja) * | 2010-04-19 | 2011-11-10 | Taiyo Yuden Co Ltd | 薄膜キャパシタ |
US8283227B2 (en) | 2010-11-08 | 2012-10-09 | Elpida Memory, Inc. | Method for manufacturing semiconductor memory device |
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TW200947671A (en) | 2009-11-16 |
JPWO2009090979A1 (ja) | 2011-05-26 |
CN101919044A (zh) | 2010-12-15 |
KR20100084677A (ko) | 2010-07-27 |
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