DE69619602D1 - Verfahren zum Herstellen eines Halbleiter-Substrats - Google Patents

Verfahren zum Herstellen eines Halbleiter-Substrats

Info

Publication number
DE69619602D1
DE69619602D1 DE69619602T DE69619602T DE69619602D1 DE 69619602 D1 DE69619602 D1 DE 69619602D1 DE 69619602 T DE69619602 T DE 69619602T DE 69619602 T DE69619602 T DE 69619602T DE 69619602 D1 DE69619602 D1 DE 69619602D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor substrate
semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69619602T
Other languages
English (en)
Other versions
DE69619602T2 (de
Inventor
Kenji Yamagata
Takao Yonehara
Nobuhiko Sato
Kiyofumi Sakaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69619602D1 publication Critical patent/DE69619602D1/de
Application granted granted Critical
Publication of DE69619602T2 publication Critical patent/DE69619602T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/0203—Making porous regions on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
DE69619602T 1995-07-13 1996-07-12 Verfahren zum Herstellen eines Halbleiter-Substrats Expired - Lifetime DE69619602T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17718995 1995-07-13

Publications (2)

Publication Number Publication Date
DE69619602D1 true DE69619602D1 (de) 2002-04-11
DE69619602T2 DE69619602T2 (de) 2002-08-08

Family

ID=16026741

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69619602T Expired - Lifetime DE69619602T2 (de) 1995-07-13 1996-07-12 Verfahren zum Herstellen eines Halbleiter-Substrats

Country Status (9)

Country Link
US (1) US6103598A (de)
EP (1) EP0753886B1 (de)
KR (1) KR100249456B1 (de)
CN (1) CN1058354C (de)
DE (1) DE69619602T2 (de)
ES (1) ES2171616T3 (de)
MY (1) MY113920A (de)
SG (1) SG66317A1 (de)
TW (1) TW317645B (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7148119B1 (en) 1994-03-10 2006-12-12 Canon Kabushiki Kaisha Process for production of semiconductor substrate
US20030087503A1 (en) * 1994-03-10 2003-05-08 Canon Kabushiki Kaisha Process for production of semiconductor substrate
JP3293736B2 (ja) * 1996-02-28 2002-06-17 キヤノン株式会社 半導体基板の作製方法および貼り合わせ基体
KR970052020A (ko) * 1995-12-30 1997-07-29 김주용 에스 오 아이 기판 제조방법
ATE261612T1 (de) 1996-12-18 2004-03-15 Canon Kk Vefahren zum herstellen eines halbleiterartikels unter verwendung eines substrates mit einer porösen halbleiterschicht
SG71094A1 (en) * 1997-03-26 2000-03-21 Canon Kk Thin film formation using laser beam heating to separate layers
JP3847935B2 (ja) * 1998-01-09 2006-11-22 キヤノン株式会社 多孔質領域の除去方法及び半導体基体の製造方法
JP3218564B2 (ja) 1998-01-14 2001-10-15 キヤノン株式会社 多孔質領域の除去方法及び半導体基体の製造方法
US6376285B1 (en) * 1998-05-28 2002-04-23 Texas Instruments Incorporated Annealed porous silicon with epitaxial layer for SOI
CN1495915A (zh) * 1998-07-03 2004-05-12 ������������ʽ���� 光电转换元件
JP2000173976A (ja) * 1998-12-02 2000-06-23 Mitsubishi Electric Corp 半導体装置の製造方法
JP2000223682A (ja) * 1999-02-02 2000-08-11 Canon Inc 基体の処理方法及び半導体基板の製造方法
US6410436B2 (en) * 1999-03-26 2002-06-25 Canon Kabushiki Kaisha Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate
US8507361B2 (en) * 2000-11-27 2013-08-13 Soitec Fabrication of substrates with a useful layer of monocrystalline semiconductor material
US6699770B2 (en) * 2001-03-01 2004-03-02 John Tarje Torvik Method of making a hybride substrate having a thin silicon carbide membrane layer
DE10128719A1 (de) * 2001-06-13 2002-12-19 Muehlbauer Ernst Gmbh & Co Kg Zahnärztlicher Abformlöffel
US7535100B2 (en) * 2002-07-12 2009-05-19 The United States Of America As Represented By The Secretary Of The Navy Wafer bonding of thinned electronic materials and circuits to high performance substrates
JP2004103600A (ja) * 2002-09-04 2004-04-02 Canon Inc 基板及びその製造方法
TWI242796B (en) * 2002-09-04 2005-11-01 Canon Kk Substrate and manufacturing method therefor
JP2004103855A (ja) * 2002-09-10 2004-04-02 Canon Inc 基板及びその製造方法
JP2004103946A (ja) * 2002-09-11 2004-04-02 Canon Inc 基板及びその製造方法
EP1441445B1 (de) * 2003-01-24 2006-11-29 STMicroelectronics S.r.l. Pipeline Analog-Digital-Wandler mit Korrektion von Verstärkungsfehlern zwischen den Stufen
US7198974B2 (en) * 2003-03-05 2007-04-03 Micron Technology, Inc. Micro-mechanically strained semiconductor film
US7220656B2 (en) 2003-04-29 2007-05-22 Micron Technology, Inc. Strained semiconductor by wafer bonding with misorientation
US7115480B2 (en) 2003-05-07 2006-10-03 Micron Technology, Inc. Micromechanical strained semiconductor by wafer bonding
US7008854B2 (en) * 2003-05-21 2006-03-07 Micron Technology, Inc. Silicon oxycarbide substrates for bonded silicon on insulator
US7662701B2 (en) 2003-05-21 2010-02-16 Micron Technology, Inc. Gettering of silicon on insulator using relaxed silicon germanium epitaxial proximity layers
US7273788B2 (en) 2003-05-21 2007-09-25 Micron Technology, Inc. Ultra-thin semiconductors bonded on glass substrates
US7439158B2 (en) 2003-07-21 2008-10-21 Micron Technology, Inc. Strained semiconductor by full wafer bonding
US7153753B2 (en) 2003-08-05 2006-12-26 Micron Technology, Inc. Strained Si/SiGe/SOI islands and processes of making same
US20050132332A1 (en) * 2003-12-12 2005-06-16 Abhay Sathe Multi-location coordinated test apparatus
US7354863B2 (en) * 2004-03-19 2008-04-08 Micron Technology, Inc. Methods of selectively removing silicon
US7544584B2 (en) 2006-02-16 2009-06-09 Micron Technology, Inc. Localized compressive strained semiconductor
EP1926132A1 (de) * 2006-11-23 2008-05-28 S.O.I.Tec Silicon on Insulator Technologies Chromfreie Ätzlösung für Si-Substrate und SiGe-substrate, Verfahren zum Präparieren von Defekten diese Ätzlösung verwendend und Verfahren zum Behnadeln von Si-Substraten und SiGe-Substraten
CN100440489C (zh) * 2006-11-28 2008-12-03 北京大学 一种多孔硅片及其制备方法
RU2461090C1 (ru) * 2010-12-23 2012-09-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводниковой структуры
CN102169552A (zh) * 2011-01-28 2011-08-31 上海集成电路研发中心有限公司 射频识别标签及其制造方法
US20190131454A1 (en) * 2017-11-01 2019-05-02 Qualcomm Incorporated Semiconductor device with strained silicon layers on porous silicon
TWI683351B (zh) * 2017-12-14 2020-01-21 新唐科技股份有限公司 半導體裝置及其形成方法
TW202113928A (zh) * 2019-06-06 2021-04-01 英商Ｉｑｅ有限公司 分層結構中的可調應力補償

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5190613A (en) * 1988-10-02 1993-03-02 Canon Kabushiki Kaisha Method for forming crystals
EP0364139B1 (de) * 1988-10-02 1994-02-23 Canon Kabushiki Kaisha Gegenstand aus Kristall und Verfahren zu seiner Herstellung
US5290712A (en) * 1989-03-31 1994-03-01 Canon Kabushiki Kaisha Process for forming crystalline semiconductor film
JPH03215391A (ja) * 1989-06-26 1991-09-20 Canon Inc 結晶の成長方法
US5278092A (en) * 1989-08-07 1994-01-11 Canon Kabushiki Kaisha Method of forming crystal semiconductor film
US5278093A (en) * 1989-09-23 1994-01-11 Canon Kabushiki Kaisha Method for forming semiconductor thin film
JP2695488B2 (ja) * 1989-10-09 1997-12-24 キヤノン株式会社 結晶の成長方法
US5363793A (en) * 1990-04-06 1994-11-15 Canon Kabushiki Kaisha Method for forming crystals
JP2608351B2 (ja) * 1990-08-03 1997-05-07 キヤノン株式会社 半導体部材及び半導体部材の製造方法
KR950014609B1 (ko) * 1990-08-03 1995-12-11 캐논 가부시끼가이샤 반도체부재 및 반도체부재의 제조방법
US5403751A (en) * 1990-11-29 1995-04-04 Canon Kabushiki Kaisha Process for producing a thin silicon solar cell
US5403771A (en) * 1990-12-26 1995-04-04 Canon Kabushiki Kaisha Process for producing a solar cell by means of epitaxial growth process
SG93197A1 (en) * 1991-02-15 2002-12-17 Canon Kk Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
JP3347354B2 (ja) * 1991-02-15 2002-11-20 キヤノン株式会社 エッチング方法および半導体基材の作製方法
TW211621B (de) * 1991-07-31 1993-08-21 Canon Kk
DE69334324D1 (de) * 1992-01-30 2010-05-06 Canon Kk Herstellungsverfahren für Halbleitersubstrat
JP3261685B2 (ja) * 1992-01-31 2002-03-04 キヤノン株式会社 半導体素子基体及びその作製方法

Also Published As

Publication number Publication date
EP0753886B1 (de) 2002-03-06
ES2171616T3 (es) 2002-09-16
US6103598A (en) 2000-08-15
KR100249456B1 (ko) 2000-03-15
TW317645B (de) 1997-10-11
CN1149758A (zh) 1997-05-14
SG66317A1 (en) 1999-07-20
CN1058354C (zh) 2000-11-08
MY113920A (en) 2002-06-29
DE69619602T2 (de) 2002-08-08
EP0753886A1 (de) 1997-01-15

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