DE69825517D1 - Herstellungsverfahren eines Halbleiter-Substrats - Google Patents
Herstellungsverfahren eines Halbleiter-SubstratsInfo
- Publication number
- DE69825517D1 DE69825517D1 DE69825517T DE69825517T DE69825517D1 DE 69825517 D1 DE69825517 D1 DE 69825517D1 DE 69825517 T DE69825517 T DE 69825517T DE 69825517 T DE69825517 T DE 69825517T DE 69825517 D1 DE69825517 D1 DE 69825517D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor substrate
- manufacturing process
- manufacturing
- semiconductor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP07554397A JP3492142B2 (ja) | 1997-03-27 | 1997-03-27 | 半導体基材の製造方法 |
JP7554397 | 1997-03-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69825517D1 true DE69825517D1 (de) | 2004-09-16 |
DE69825517T2 DE69825517T2 (de) | 2005-09-01 |
Family
ID=13579231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69825517T Expired - Lifetime DE69825517T2 (de) | 1997-03-27 | 1998-03-26 | Herstellungsverfahren eines Halbleiter-Substrats |
Country Status (7)
Country | Link |
---|---|
US (1) | US6258698B1 (de) |
EP (1) | EP0867918B1 (de) |
JP (1) | JP3492142B2 (de) |
KR (1) | KR100300279B1 (de) |
CN (1) | CN1122317C (de) |
AU (1) | AU734765B2 (de) |
DE (1) | DE69825517T2 (de) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6306729B1 (en) | 1997-12-26 | 2001-10-23 | Canon Kabushiki Kaisha | Semiconductor article and method of manufacturing the same |
MY118019A (en) | 1998-02-18 | 2004-08-30 | Canon Kk | Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof |
US6555443B1 (en) * | 1998-11-11 | 2003-04-29 | Robert Bosch Gmbh | Method for production of a thin film and a thin-film solar cell, in particular, on a carrier substrate |
JP2000223683A (ja) * | 1999-02-02 | 2000-08-11 | Canon Inc | 複合部材及びその分離方法、貼り合わせ基板及びその分離方法、移設層の移設方法、並びにsoi基板の製造方法 |
US6664169B1 (en) | 1999-06-08 | 2003-12-16 | Canon Kabushiki Kaisha | Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus |
JP2001160540A (ja) * | 1999-09-22 | 2001-06-12 | Canon Inc | 半導体装置の製造方法、液相成長法及び液相成長装置、太陽電池 |
US6602767B2 (en) * | 2000-01-27 | 2003-08-05 | Canon Kabushiki Kaisha | Method for transferring porous layer, method for making semiconductor devices, and method for making solar battery |
US8507361B2 (en) * | 2000-11-27 | 2013-08-13 | Soitec | Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
JP2002187791A (ja) * | 2000-12-15 | 2002-07-05 | Canon Inc | 液相成長方法および液相成長装置 |
JP4708577B2 (ja) | 2001-01-31 | 2011-06-22 | キヤノン株式会社 | 薄膜半導体装置の製造方法 |
JP2002229473A (ja) | 2001-01-31 | 2002-08-14 | Canon Inc | 表示装置の製造方法 |
JP4803884B2 (ja) * | 2001-01-31 | 2011-10-26 | キヤノン株式会社 | 薄膜半導体装置の製造方法 |
US6824609B2 (en) * | 2001-08-28 | 2004-11-30 | Canon Kabushiki Kaisha | Liquid phase growth method and liquid phase growth apparatus |
EP1385199A1 (de) * | 2002-07-24 | 2004-01-28 | IMEC vzw, Interuniversitair Microelectronica Centrum vzw | Verfahren zur Herstellung von Dünnfilmelementen für Solarzellen oder SOI Anwendungen |
JP2004140120A (ja) * | 2002-10-16 | 2004-05-13 | Canon Inc | 多結晶シリコン基板 |
US7592239B2 (en) * | 2003-04-30 | 2009-09-22 | Industry University Cooperation Foundation-Hanyang University | Flexible single-crystal film and method of manufacturing the same |
US20040218133A1 (en) * | 2003-04-30 | 2004-11-04 | Park Jong-Wan | Flexible electro-optical apparatus and method for manufacturing the same |
WO2004099473A1 (en) * | 2003-05-06 | 2004-11-18 | Canon Kabushiki Kaisha | Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor |
JP2004335642A (ja) * | 2003-05-06 | 2004-11-25 | Canon Inc | 基板およびその製造方法 |
US20050124137A1 (en) * | 2003-05-07 | 2005-06-09 | Canon Kabushiki Kaisha | Semiconductor substrate and manufacturing method therefor |
TWI242232B (en) * | 2003-06-09 | 2005-10-21 | Canon Kk | Semiconductor substrate, semiconductor device, and method of manufacturing the same |
JP2005005509A (ja) * | 2003-06-12 | 2005-01-06 | Canon Inc | 薄膜トランジスタ及びその製造方法 |
JP4554180B2 (ja) * | 2003-09-17 | 2010-09-29 | ソニー株式会社 | 薄膜半導体デバイスの製造方法 |
US20050066881A1 (en) * | 2003-09-25 | 2005-03-31 | Canon Kabushiki Kaisha | Continuous production method for crystalline silicon and production apparatus for the same |
US20050082526A1 (en) * | 2003-10-15 | 2005-04-21 | International Business Machines Corporation | Techniques for layer transfer processing |
JP2005135942A (ja) * | 2003-10-28 | 2005-05-26 | Canon Inc | 電極配設方法 |
JP2005142268A (ja) * | 2003-11-05 | 2005-06-02 | Canon Inc | 光起電力素子およびその製造方法 |
US20050132332A1 (en) * | 2003-12-12 | 2005-06-16 | Abhay Sathe | Multi-location coordinated test apparatus |
JP2005336008A (ja) | 2004-05-27 | 2005-12-08 | Canon Inc | シリコン膜の製造方法および太陽電池の製造方法 |
JP4771510B2 (ja) * | 2004-06-23 | 2011-09-14 | キヤノン株式会社 | 半導体層の製造方法及び基板の製造方法 |
JP4950047B2 (ja) * | 2004-07-22 | 2012-06-13 | ボード オブ トラスティーズ オブ ザ レランド スタンフォード ジュニア ユニバーシティ | ゲルマニウムの成長方法及び半導体基板の製造方法 |
EP1962340A3 (de) | 2004-11-09 | 2009-12-23 | S.O.I. TEC Silicon | Verfahren zur Herstellung von zusammengesetzten Wafern |
CN101443888B (zh) * | 2006-03-13 | 2011-03-16 | 内诺格雷姆公司 | 薄硅或者锗片以及由薄片形成的光电池 |
JP5171016B2 (ja) | 2006-10-27 | 2013-03-27 | キヤノン株式会社 | 半導体部材、半導体物品の製造方法、その製造方法を用いたledアレイ |
TWI348503B (en) * | 2006-12-22 | 2011-09-11 | Ind Tech Res Inst | Method and apparatus for thin film growing |
US20080277778A1 (en) | 2007-05-10 | 2008-11-13 | Furman Bruce K | Layer Transfer Process and Functionally Enhanced Integrated Circuits Products Thereby |
KR20100029126A (ko) * | 2007-06-15 | 2010-03-15 | 나노그램 코포레이션 | 무기물 포일의 반응성 유동 증착 및 합성 |
JP2009094144A (ja) * | 2007-10-04 | 2009-04-30 | Canon Inc | 発光素子の製造方法 |
CN101842910B (zh) * | 2007-11-01 | 2013-03-27 | 株式会社半导体能源研究所 | 用于制造光电转换器件的方法 |
CN101752455B (zh) * | 2008-12-15 | 2011-12-07 | 中芯国际集成电路制造(上海)有限公司 | 太阳能电池的制造方法 |
US9245760B2 (en) | 2010-09-30 | 2016-01-26 | Infineon Technologies Ag | Methods of forming epitaxial layers on a porous semiconductor layer |
CN102143053B (zh) | 2010-11-12 | 2014-08-20 | 华为技术有限公司 | 传输数据的方法、装置和系统 |
CN102231408B (zh) * | 2011-07-04 | 2015-04-08 | 无锡成敏光伏技术咨询有限公司 | 层转移太阳能电池的制造方法 |
JP5769023B2 (ja) * | 2011-11-22 | 2015-08-26 | 株式会社トクヤマ | シリコン単結晶膜の製造方法 |
CN102945886A (zh) * | 2012-12-07 | 2013-02-27 | 上海空间电源研究所 | 包含复合层的柔性衬底硅基多结叠层太阳电池 |
FR3093716B1 (fr) | 2019-03-15 | 2021-02-12 | Soitec Silicon On Insulator | systeme de fracture d'une pluralitÉ d'assemblages de tranches. |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4116751A (en) | 1975-10-08 | 1978-09-26 | Solomon Zaromb | Methods and apparatus for producing unsupported monocrystalline films of silicon and of other materials |
EP0193830A3 (de) | 1980-04-10 | 1986-10-01 | Massachusetts Institute Of Technology | Sonnenzellenvorrichtung mit mehreren einzelnen Sonnenzellen |
DE69133004T2 (de) | 1990-08-03 | 2002-10-02 | Canon Kk | Verfahren zur Herstellung eines Halbleiterkörpers |
JP3237888B2 (ja) * | 1992-01-31 | 2001-12-10 | キヤノン株式会社 | 半導体基体及びその作製方法 |
JP3191972B2 (ja) * | 1992-01-31 | 2001-07-23 | キヤノン株式会社 | 半導体基板の作製方法及び半導体基板 |
JP2943126B2 (ja) | 1992-07-23 | 1999-08-30 | キヤノン株式会社 | 太陽電池及びその製造方法 |
JP3360919B2 (ja) * | 1993-06-11 | 2003-01-07 | 三菱電機株式会社 | 薄膜太陽電池の製造方法,及び薄膜太陽電池 |
US5391257A (en) | 1993-12-10 | 1995-02-21 | Rockwell International Corporation | Method of transferring a thin film to an alternate substrate |
JP3257580B2 (ja) | 1994-03-10 | 2002-02-18 | キヤノン株式会社 | 半導体基板の作製方法 |
JP3293736B2 (ja) | 1996-02-28 | 2002-06-17 | キヤノン株式会社 | 半導体基板の作製方法および貼り合わせ基体 |
FR2725074B1 (fr) | 1994-09-22 | 1996-12-20 | Commissariat Energie Atomique | Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat |
JP3381443B2 (ja) | 1995-02-02 | 2003-02-24 | ソニー株式会社 | 基体から半導体層を分離する方法、半導体素子の製造方法およびsoi基板の製造方法 |
US5674758A (en) * | 1995-06-06 | 1997-10-07 | Regents Of The University Of California | Silicon on insulator achieved using electrochemical etching |
EP0797258B1 (de) | 1996-03-18 | 2011-07-20 | Sony Corporation | Herstellungsverfahren von Dünnschichthalbleitern, Solarzellen und lichtemittierenden Dioden |
CA2220600C (en) | 1996-11-15 | 2002-02-12 | Canon Kabushiki Kaisha | Method of manufacturing semiconductor article |
SG55413A1 (en) | 1996-11-15 | 1998-12-21 | Method Of Manufacturing Semico | Method of manufacturing semiconductor article |
-
1997
- 1997-03-27 JP JP07554397A patent/JP3492142B2/ja not_active Expired - Fee Related
-
1998
- 1998-03-24 US US09/046,600 patent/US6258698B1/en not_active Expired - Fee Related
- 1998-03-26 EP EP98105534A patent/EP0867918B1/de not_active Expired - Lifetime
- 1998-03-26 DE DE69825517T patent/DE69825517T2/de not_active Expired - Lifetime
- 1998-03-27 CN CN98108876A patent/CN1122317C/zh not_active Expired - Fee Related
- 1998-03-27 KR KR1019980010775A patent/KR100300279B1/ko not_active IP Right Cessation
- 1998-03-27 AU AU59696/98A patent/AU734765B2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
EP0867918A2 (de) | 1998-09-30 |
JP3492142B2 (ja) | 2004-02-03 |
US6258698B1 (en) | 2001-07-10 |
EP0867918B1 (de) | 2004-08-11 |
DE69825517T2 (de) | 2005-09-01 |
AU5969698A (en) | 1998-10-01 |
JPH10270669A (ja) | 1998-10-09 |
CN1122317C (zh) | 2003-09-24 |
AU734765B2 (en) | 2001-06-21 |
CN1198020A (zh) | 1998-11-04 |
EP0867918A3 (de) | 1998-12-16 |
KR100300279B1 (ko) | 2001-09-06 |
KR19980080797A (ko) | 1998-11-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |