DE69515020T2 - Verfahren zum Züchten eines Halbleiterkristalls - Google Patents

Verfahren zum Züchten eines Halbleiterkristalls

Info

Publication number
DE69515020T2
DE69515020T2 DE69515020T DE69515020T DE69515020T2 DE 69515020 T2 DE69515020 T2 DE 69515020T2 DE 69515020 T DE69515020 T DE 69515020T DE 69515020 T DE69515020 T DE 69515020T DE 69515020 T2 DE69515020 T2 DE 69515020T2
Authority
DE
Germany
Prior art keywords
growing
semiconductor crystal
crystal
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69515020T
Other languages
English (en)
Other versions
DE69515020D1 (de
Inventor
Yasuaki Miyamoto
Ichirou Asai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Publication of DE69515020T2 publication Critical patent/DE69515020T2/de
Application granted granted Critical
Publication of DE69515020D1 publication Critical patent/DE69515020D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
DE69515020T 1995-02-28 1995-10-17 Verfahren zum Züchten eines Halbleiterkristalls Expired - Fee Related DE69515020D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7040818A JPH08236443A (ja) 1995-02-28 1995-02-28 半導体結晶の成長方法および半導体製造装置

Publications (2)

Publication Number Publication Date
DE69515020T2 true DE69515020T2 (de) 2000-10-19
DE69515020D1 DE69515020D1 (de) 2008-05-08

Family

ID=12591245

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69515020T Expired - Fee Related DE69515020D1 (de) 1995-02-28 1995-10-17 Verfahren zum Züchten eines Halbleiterkristalls

Country Status (4)

Country Link
US (1) US5683935A (de)
EP (1) EP0730292B1 (de)
JP (1) JPH08236443A (de)
DE (1) DE69515020D1 (de)

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US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
JP3349355B2 (ja) * 1996-08-19 2002-11-25 三洋電機株式会社 半導体膜のレーザーアニール方法
US6423585B1 (en) * 1997-03-11 2002-07-23 Semiconductor Energy Laboratory Co., Ltd. Heating treatment device, heating treatment method and fabrication method of semiconductor device
US6126741A (en) * 1998-12-07 2000-10-03 General Electric Company Polycrystalline carbon conversion
US6733586B2 (en) 2001-07-31 2004-05-11 Illinois Institute Of Technology High throughput non-photochemical laser induced nucleation
US6596077B2 (en) 2001-07-31 2003-07-22 Illinois Institute Of Technology Controlled nucleation of protein crystals
JP4397571B2 (ja) * 2001-09-25 2010-01-13 株式会社半導体エネルギー研究所 レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
US6700096B2 (en) * 2001-10-30 2004-03-02 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment
JP3942878B2 (ja) * 2001-11-28 2007-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6682992B2 (en) 2002-05-15 2004-01-27 International Business Machines Corporation Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structures
KR101131040B1 (ko) 2002-08-19 2012-03-30 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 에지 영역을 최소화하도록 기판 상의 박막 영역을 레이저결정화 처리하는 방법 및 시스템, 그리고 그러한 박막 영역의 구조
AU2003258289A1 (en) 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York A single-shot semiconductor processing system and method having various irradiation patterns
JP4481562B2 (ja) * 2002-11-29 2010-06-16 キヤノン株式会社 結晶性薄膜の製造方法
US7473621B2 (en) 2002-11-27 2009-01-06 Canon Kabushiki Kaisha Producing method for crystalline thin film
CN1295751C (zh) * 2003-06-16 2007-01-17 友达光电股份有限公司 多晶硅薄膜的制造方法
WO2005029547A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
TWI351713B (en) 2003-09-16 2011-11-01 Univ Columbia Method and system for providing a single-scan, con
KR100971951B1 (ko) * 2003-09-17 2010-07-23 엘지디스플레이 주식회사 엑시머 레이저를 이용한 비정질 실리콘 박막 결정화 방법
US7311778B2 (en) 2003-09-19 2007-12-25 The Trustees Of Columbia University In The City Of New York Single scan irradiation for crystallization of thin films
US7645337B2 (en) 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
JP2009518864A (ja) 2005-12-05 2009-05-07 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 膜を加工するためのシステム及び方法並びに薄膜
JP2008243975A (ja) * 2007-03-26 2008-10-09 Japan Steel Works Ltd:The アモルファス薄膜の結晶化方法および結晶化装置
US8614471B2 (en) 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
US8415670B2 (en) * 2007-09-25 2013-04-09 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
CN101919058B (zh) 2007-11-21 2014-01-01 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
WO2009111340A2 (en) 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
WO2010056990A1 (en) 2008-11-14 2010-05-20 The Trustees Of Columbia University In The City Of New York Systems and methods for the crystallization of thin films
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US9065009B2 (en) 2012-04-10 2015-06-23 First Solar, Inc. Apparatus and method for forming a transparent conductive oxide layer over a substrate using a laser
CN105185694A (zh) * 2015-08-20 2015-12-23 京东方科技集团股份有限公司 多晶硅薄膜形成方法、掩膜版、多晶硅薄膜和薄膜晶体管

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3166961D1 (en) * 1980-08-05 1984-12-06 Belge Etat Process for the manufacture of polycrystalline films of semiconductors formed by compounds or elements, and films thus obtained
JP2695488B2 (ja) * 1989-10-09 1997-12-24 キヤノン株式会社 結晶の成長方法
US5207863A (en) * 1990-04-06 1993-05-04 Canon Kabushiki Kaisha Crystal growth method and crystalline article obtained by said method
JPH05182923A (ja) * 1991-05-28 1993-07-23 Semiconductor Energy Lab Co Ltd レーザーアニール方法
JPH05175149A (ja) * 1991-08-22 1993-07-13 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH05102035A (ja) * 1991-10-04 1993-04-23 Sony Corp 半導体結晶の成長方法
US5373803A (en) * 1991-10-04 1994-12-20 Sony Corporation Method of epitaxial growth of semiconductor
JPH069074A (ja) 1992-06-23 1994-01-18 Yamada Kikai Kogyo Kk 紙葉類供給装置
JP3306925B2 (ja) * 1992-09-17 2002-07-24 ソニー株式会社 半導体結晶の成長方法及びｍｏｓ型トランジスタの作製方法
JPH076960A (ja) * 1993-06-16 1995-01-10 Fuji Electric Co Ltd 多結晶半導体薄膜の生成方法

Also Published As

Publication number Publication date
EP0730292A1 (de) 1996-09-04
DE69515020D1 (de) 2008-05-08
US5683935A (en) 1997-11-04
JPH08236443A (ja) 1996-09-13
EP0730292B1 (de) 2000-02-09

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Representative=s name: BOETERS & LIECK, 81541 MUENCHEN

8372 Publication of ep patent withdrawn
8339 Ceased/non-payment of the annual fee
8364 No opposition during term of opposition