DE69505022D1 - Verfahren zum Ätzen eines Verbundhalbleiters - Google Patents

Verfahren zum Ätzen eines Verbundhalbleiters

Info

Publication number
DE69505022D1
DE69505022D1 DE69505022T DE69505022T DE69505022D1 DE 69505022 D1 DE69505022 D1 DE 69505022D1 DE 69505022 T DE69505022 T DE 69505022T DE 69505022 T DE69505022 T DE 69505022T DE 69505022 D1 DE69505022 D1 DE 69505022D1
Authority
DE
Germany
Prior art keywords
etching
compound semiconductor
semiconductor
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69505022T
Other languages
English (en)
Other versions
DE69505022T2 (de
Inventor
Tien-Heng Chiu
Won-Tien Tsang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69505022D1 publication Critical patent/DE69505022D1/de
Application granted granted Critical
Publication of DE69505022T2 publication Critical patent/DE69505022T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/913—Diverse treatments performed in unitary chamber

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE69505022T 1994-02-15 1995-02-08 Verfahren zum Ätzen eines Verbundhalbleiters Expired - Fee Related DE69505022T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/196,930 US5407531A (en) 1994-02-15 1994-02-15 Method of fabricating a compound semiconductor device

Publications (2)

Publication Number Publication Date
DE69505022D1 true DE69505022D1 (de) 1998-11-05
DE69505022T2 DE69505022T2 (de) 1999-04-15

Family

ID=22727339

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69505022T Expired - Fee Related DE69505022T2 (de) 1994-02-15 1995-02-08 Verfahren zum Ätzen eines Verbundhalbleiters

Country Status (4)

Country Link
US (1) US5407531A (de)
EP (1) EP0667638B1 (de)
JP (1) JP3258847B2 (de)
DE (1) DE69505022T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5711851A (en) * 1996-07-12 1998-01-27 Micron Technology, Inc. Process for improving the performance of a temperature-sensitive etch process
US5930656A (en) * 1996-10-21 1999-07-27 Kabushiki Kaisha Toshiba Method of fabricating a compound semiconductor device
JPWO2005031829A1 (ja) * 2003-09-24 2006-12-07 日本電気株式会社 半導体素子および半導体集積素子
JP5935472B2 (ja) * 2012-04-16 2016-06-15 三菱電機株式会社 半導体デバイスの製造方法
KR101450521B1 (ko) * 2013-08-14 2014-10-16 (재)한국나노기술원 실리콘 트렌치가 형성된 반도체 소자를 제조하는 방법
JP2015141936A (ja) * 2014-01-27 2015-08-03 三菱電機株式会社 半導体装置の製造方法
CN114654097B (zh) * 2022-02-24 2023-03-07 苏州大学 基于分子束外延原位激光干涉光刻方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56169331A (en) * 1980-05-30 1981-12-26 Nec Corp Vapor phase etching method for compound semiconductor
JPS60211824A (ja) * 1984-04-05 1985-10-24 Nec Corp ３−５族化合物半導体の気相成長方法
GB2162207B (en) * 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus
JPH0766908B2 (ja) * 1984-07-26 1995-07-19 新技術事業団 半導体単結晶成長方法
JPS61139686A (ja) * 1984-12-10 1986-06-26 Toshiba Corp 気相エツチング方法
JPH0765916B2 (ja) * 1986-09-02 1995-07-19 オ−バル機器工業株式会社 挿入形熱式流量計
JPS6461918A (en) * 1987-09-02 1989-03-08 Hitachi Ltd Surface treatment equipment
JPH01214017A (ja) * 1988-02-22 1989-08-28 Fujitsu Ltd 分子線エピタキシアル成長方法及び装置
JPH01276724A (ja) * 1988-04-28 1989-11-07 Fujitsu Ltd 半導体装置の製造方法
US5037775A (en) * 1988-11-30 1991-08-06 Mcnc Method for selectively depositing single elemental semiconductor material on substrates
US5112439A (en) * 1988-11-30 1992-05-12 Mcnc Method for selectively depositing material on substrates
JPH0821569B2 (ja) * 1989-02-21 1996-03-04 日本電気株式会社 ドライエッチング方法
JP3158651B2 (ja) * 1991-07-04 2001-04-23 三菱化学株式会社 化合物半導体及びその製造方法
JPH05198509A (ja) * 1992-01-21 1993-08-06 Hikari Gijutsu Kenkyu Kaihatsu Kk 表面処理方法及び表面処理装置
US5201995A (en) * 1992-03-16 1993-04-13 Mcnc Alternating cyclic pressure modulation process for selective area deposition
JP2570615Y2 (ja) * 1992-04-08 1998-05-06 石川島播磨重工業株式会社 ドライエッチング装置のエッチャントガス微量供給装置

Also Published As

Publication number Publication date
JPH0897193A (ja) 1996-04-12
EP0667638B1 (de) 1998-09-30
EP0667638A2 (de) 1995-08-16
EP0667638A3 (de) 1996-07-10
US5407531A (en) 1995-04-18
JP3258847B2 (ja) 2002-02-18
DE69505022T2 (de) 1999-04-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee