JPS6461918A - Surface treatment equipment - Google Patents

Surface treatment equipment

Info

Publication number
JPS6461918A
JPS6461918A JP21780687A JP21780687A JPS6461918A JP S6461918 A JPS6461918 A JP S6461918A JP 21780687 A JP21780687 A JP 21780687A JP 21780687 A JP21780687 A JP 21780687A JP S6461918 A JPS6461918 A JP S6461918A
Authority
JP
Japan
Prior art keywords
treated
substrate
reaction gas
reaction
desorption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21780687A
Other languages
Japanese (ja)
Inventor
Yusuke Yajima
Keizo Suzuki
Shigeru Nishimatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP21780687A priority Critical patent/JPS6461918A/en
Publication of JPS6461918A publication Critical patent/JPS6461918A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To execute anisotropic treatment at speed, which does not depend upon the shape of the surface, by using a treating method through which the supply of a reaction gas to a substrate to be treated and the desorption of a product do not progress simultaneously. CONSTITUTION:A substrate to be treated 7 supported where opposite to a nozzle 4 is supplied with a rection gas 3 carried to the nozzle 4 from a reaction gas vessel 6 as pulses. The substrate to be treated 7 is supplied with the reaction gas 3 changed into pulses, and a surface reaction progresses. Products 8 generated by the reaction are desorbed from the surface during the time when the substrate to be treated 7 is not fed with the reaction gas 3. The desorption of the products 8 is completed, and the substrate to be treated 7 is supplied with the pulses of the succeeding reaction gas 3. Accordingly, the supply of the reaction gas 3, the progress of the surface reaction and the desorption of the products 8 are repeated as non-stationary periodic processes.
JP21780687A 1987-09-02 1987-09-02 Surface treatment equipment Pending JPS6461918A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21780687A JPS6461918A (en) 1987-09-02 1987-09-02 Surface treatment equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21780687A JPS6461918A (en) 1987-09-02 1987-09-02 Surface treatment equipment

Publications (1)

Publication Number Publication Date
JPS6461918A true JPS6461918A (en) 1989-03-08

Family

ID=16710029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21780687A Pending JPS6461918A (en) 1987-09-02 1987-09-02 Surface treatment equipment

Country Status (1)

Country Link
JP (1) JPS6461918A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0897193A (en) * 1994-02-15 1996-04-12 At & T Corp Manufacture of semiconductor element
JPH11274115A (en) * 1998-03-18 1999-10-08 Ebara Corp Gas polishing method and apparatus therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0897193A (en) * 1994-02-15 1996-04-12 At & T Corp Manufacture of semiconductor element
JPH11274115A (en) * 1998-03-18 1999-10-08 Ebara Corp Gas polishing method and apparatus therefor

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