DE69506646D1 - Verfahren zum Herstellen einer Halbleitereinrichtung - Google Patents
Verfahren zum Herstellen einer HalbleitereinrichtungInfo
- Publication number
- DE69506646D1 DE69506646D1 DE69506646T DE69506646T DE69506646D1 DE 69506646 D1 DE69506646 D1 DE 69506646D1 DE 69506646 T DE69506646 T DE 69506646T DE 69506646 T DE69506646 T DE 69506646T DE 69506646 D1 DE69506646 D1 DE 69506646D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28581—Deposition of Schottky electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP06217513A JP3077524B2 (ja) | 1994-09-12 | 1994-09-12 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69506646D1 true DE69506646D1 (de) | 1999-01-28 |
DE69506646T2 DE69506646T2 (de) | 1999-06-17 |
Family
ID=16705414
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69506646T Expired - Fee Related DE69506646T2 (de) | 1994-09-12 | 1995-08-08 | Verfahren zum Herstellen einer Halbleitereinrichtung |
Country Status (6)
Country | Link |
---|---|
US (1) | US5712175A (de) |
EP (1) | EP0701272B1 (de) |
JP (1) | JP3077524B2 (de) |
KR (1) | KR100195293B1 (de) |
DE (1) | DE69506646T2 (de) |
FI (1) | FI110642B (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09283621A (ja) * | 1996-04-10 | 1997-10-31 | Murata Mfg Co Ltd | 半導体装置のt型ゲート電極形成方法およびその構造 |
JP2780704B2 (ja) * | 1996-06-14 | 1998-07-30 | 日本電気株式会社 | 半導体装置の製造方法 |
JP4093395B2 (ja) * | 2001-08-03 | 2008-06-04 | 富士通株式会社 | 半導体装置とその製造方法 |
TW569077B (en) * | 2003-05-13 | 2004-01-01 | Univ Nat Chiao Tung | Method for fabricating nanometer gate in semiconductor device using thermally reflowed resist technology |
US8878245B2 (en) | 2006-11-30 | 2014-11-04 | Cree, Inc. | Transistors and method for making ohmic contact to transistors |
US8368100B2 (en) | 2007-11-14 | 2013-02-05 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
US9634191B2 (en) * | 2007-11-14 | 2017-04-25 | Cree, Inc. | Wire bond free wafer level LED |
US8384115B2 (en) * | 2008-08-01 | 2013-02-26 | Cree, Inc. | Bond pad design for enhancing light extraction from LED chips |
US8741715B2 (en) * | 2009-04-29 | 2014-06-03 | Cree, Inc. | Gate electrodes for millimeter-wave operation and methods of fabrication |
JP5521447B2 (ja) | 2009-09-07 | 2014-06-11 | 富士通株式会社 | 半導体装置の製造方法 |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
USD826871S1 (en) | 2014-12-11 | 2018-08-28 | Cree, Inc. | Light emitting diode device |
CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
WO2020214227A2 (en) | 2019-04-04 | 2020-10-22 | Hrl Laboratories, Llc | Miniature field plate t-gate and method of fabricating the same |
CN113097307B (zh) * | 2021-03-31 | 2022-07-19 | 浙江集迈科微电子有限公司 | GaN器件结构及其制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59135773A (ja) * | 1983-01-24 | 1984-08-04 | Nec Corp | 半導体装置の製造方法 |
US4959326A (en) * | 1988-12-22 | 1990-09-25 | Siemens Aktiengesellschaft | Fabricating T-gate MESFETS employing double exposure, double develop techniques |
JPH0414212A (ja) * | 1990-05-02 | 1992-01-20 | Dainippon Printing Co Ltd | レジストパターン形成方法 |
FR2663155B1 (fr) * | 1990-06-12 | 1997-01-24 | Thomson Composants Microondes | Procede de realisation d'une grille de transistor. |
US5147812A (en) * | 1992-04-01 | 1992-09-15 | Motorola, Inc. | Fabrication method for a sub-micron geometry semiconductor device |
DE4228836A1 (de) * | 1992-08-29 | 1994-03-03 | Daimler Benz Ag | Selbstjustierendes Verfahren zur Herstellung von Feldeffekttransistoren |
JP3082469B2 (ja) * | 1992-09-22 | 2000-08-28 | 株式会社村田製作所 | ゲート電極の形成方法 |
-
1994
- 1994-09-12 JP JP06217513A patent/JP3077524B2/ja not_active Expired - Fee Related
-
1995
- 1995-08-08 EP EP95112453A patent/EP0701272B1/de not_active Expired - Lifetime
- 1995-08-08 DE DE69506646T patent/DE69506646T2/de not_active Expired - Fee Related
- 1995-09-06 US US08/524,208 patent/US5712175A/en not_active Expired - Fee Related
- 1995-09-07 KR KR1019950029368A patent/KR100195293B1/ko not_active IP Right Cessation
- 1995-09-11 FI FI954241A patent/FI110642B/fi active
Also Published As
Publication number | Publication date |
---|---|
EP0701272A2 (de) | 1996-03-13 |
JPH0883809A (ja) | 1996-03-26 |
EP0701272B1 (de) | 1998-12-16 |
JP3077524B2 (ja) | 2000-08-14 |
EP0701272A3 (de) | 1996-03-27 |
DE69506646T2 (de) | 1999-06-17 |
FI110642B (fi) | 2003-02-28 |
KR100195293B1 (ko) | 1999-06-15 |
US5712175A (en) | 1998-01-27 |
KR960012550A (ko) | 1996-04-20 |
FI954241A0 (fi) | 1995-09-11 |
FI954241A (fi) | 1996-03-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |