DE69432604D1 - Verfahren für die herstellung eines halbleitersubstrates - Google Patents
Verfahren für die herstellung eines halbleitersubstratesInfo
- Publication number
- DE69432604D1 DE69432604D1 DE69432604T DE69432604T DE69432604D1 DE 69432604 D1 DE69432604 D1 DE 69432604D1 DE 69432604 T DE69432604 T DE 69432604T DE 69432604 T DE69432604 T DE 69432604T DE 69432604 D1 DE69432604 D1 DE 69432604D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- semiconductor substrate
- semiconductor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26533—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically inactive species in silicon to make buried insulating layers
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33789493 | 1993-12-28 | ||
JP05337894A JP3139904B2 (ja) | 1993-12-28 | 1993-12-28 | 半導体基板の製造方法および製造装置 |
PCT/JP1994/002297 WO1995018462A1 (fr) | 1993-12-28 | 1994-12-28 | Procede et dispositif de fabrication d'un substrat a semi-conducteurs |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69432604D1 true DE69432604D1 (de) | 2003-06-05 |
DE69432604T2 DE69432604T2 (de) | 2004-04-01 |
Family
ID=18313004
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69432604T Expired - Lifetime DE69432604T2 (de) | 1993-12-28 | 1994-12-28 | Verfahren für die herstellung eines halbleitersubstrates |
Country Status (6)
Country | Link |
---|---|
US (1) | US5918151A (de) |
EP (1) | EP0738004B1 (de) |
JP (1) | JP3139904B2 (de) |
KR (1) | KR100199125B1 (de) |
DE (1) | DE69432604T2 (de) |
WO (1) | WO1995018462A1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6090689A (en) * | 1998-03-04 | 2000-07-18 | International Business Machines Corporation | Method of forming buried oxide layers in silicon |
US6121624A (en) * | 1998-08-24 | 2000-09-19 | Lucent Technologies, Inc. | Method for controlled implantation of elements into the surface or near surface of a substrate |
JP2001297989A (ja) * | 2000-04-14 | 2001-10-26 | Mitsubishi Electric Corp | 半導体基板及びその製造方法並びに半導体装置及びその製造方法 |
US6417078B1 (en) * | 2000-05-03 | 2002-07-09 | Ibis Technology Corporation | Implantation process using sub-stoichiometric, oxygen doses at different energies |
EP1852908A1 (de) * | 2000-05-03 | 2007-11-07 | Ibis Technology, Inc. | Implantationsverfahren mit substöchiometrischen Luftmengen bei verschiedenen Energien |
KR100366923B1 (ko) * | 2001-02-19 | 2003-01-06 | 삼성전자 주식회사 | 에스오아이 기판 및 이의 제조방법 |
JP2002289552A (ja) * | 2001-03-28 | 2002-10-04 | Nippon Steel Corp | Simox基板の製造方法およびsimox基板 |
JP2002299591A (ja) * | 2001-03-30 | 2002-10-11 | Toshiba Corp | 半導体装置 |
US20030211711A1 (en) * | 2002-03-28 | 2003-11-13 | Hirofumi Seki | Wafer processing method and ion implantation apparatus |
AU2003303886A1 (en) * | 2003-02-03 | 2004-08-30 | Sumitomo Mitsubishi Silicon Corporation | Method for inspection, process for making analytic piece, method for analysis, analyzer, process for producing soi wafer, and soi wafer |
US7062813B2 (en) * | 2003-03-12 | 2006-06-20 | Spx Dock Products, Inc. | Support leg system and method for supporting a dock leveler |
JP2007005563A (ja) * | 2005-06-23 | 2007-01-11 | Sumco Corp | Simoxウェーハの製造方法 |
US7391038B2 (en) * | 2006-03-21 | 2008-06-24 | Varian Semiconductor Equipment Associates, Inc. | Technique for isocentric ion beam scanning |
JP5487565B2 (ja) * | 2008-06-19 | 2014-05-07 | 株式会社Sumco | エピタキシャルウェーハおよびその製造方法 |
FR2934925B1 (fr) * | 2008-08-06 | 2011-02-25 | Soitec Silicon On Insulator | Procede de fabrication d'une structure comprernant une etape d'implantations d'ions pour stabiliser l'interface de collage. |
JP2010118382A (ja) * | 2008-11-11 | 2010-05-27 | Sumco Corp | Simoxウェーハの結晶欠陥の低減方法 |
JP2010062503A (ja) * | 2008-09-08 | 2010-03-18 | Sumco Corp | Simoxウェーハの結晶欠陥の低減方法及びsimoxウェーハ |
GB2518619B (en) * | 2013-09-25 | 2016-08-10 | G E & R Hellen Ltd | Removing a retaining pin |
US10720357B2 (en) * | 2018-03-01 | 2020-07-21 | Varian Semiconductor Equipment Associates, Inc. | Method of forming transistor device having fin cut regions |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4939233A (de) * | 1972-08-21 | 1974-04-12 | ||
JPS5674929A (en) * | 1979-11-22 | 1981-06-20 | Nippon Telegr & Teleph Corp <Ntt> | Insulating layer forming method |
JPS5860556A (ja) * | 1981-10-06 | 1983-04-11 | Fujitsu Ltd | 半導体装置の製法 |
EP0197948A4 (de) * | 1984-09-28 | 1988-01-07 | Motorola Inc | Schutz gegen die entladung einer verarmungszone eines ladungsspeichers. |
US4676841A (en) * | 1985-09-27 | 1987-06-30 | American Telephone And Telegraph Company, At&T Bell Laboratories | Fabrication of dielectrically isolated devices utilizing buried oxygen implant and subsequent heat treatment at temperatures above 1300° C. |
JPH077748B2 (ja) * | 1986-07-01 | 1995-01-30 | 富士通株式会社 | 半導体装置の製造方法 |
FR2616590B1 (fr) * | 1987-06-15 | 1990-03-02 | Commissariat Energie Atomique | Procede de fabrication d'une couche d'isolant enterree dans un substrat semi-conducteur par implantation ionique et structure semi-conductrice comportant cette couche |
JPS6437835A (en) * | 1987-08-04 | 1989-02-08 | Nec Corp | Formation of layer of semiconductor device through ion implantation |
JPH0254562A (ja) * | 1988-08-18 | 1990-02-23 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH0756881B2 (ja) * | 1988-10-11 | 1995-06-14 | 三菱電機株式会社 | 埋込み酸化膜の形成方法 |
US5080730A (en) * | 1989-04-24 | 1992-01-14 | Ibis Technology Corporation | Implantation profile control with surface sputtering |
JPH02284341A (ja) * | 1989-04-24 | 1990-11-21 | Fuji Electric Co Ltd | イオン打込み装置 |
JPH03240230A (ja) * | 1990-02-19 | 1991-10-25 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH04737A (ja) * | 1990-04-17 | 1992-01-06 | Fujitsu Ltd | 半導体装置の製造方法 |
JP3012673B2 (ja) * | 1990-08-21 | 2000-02-28 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP2838444B2 (ja) * | 1991-02-05 | 1998-12-16 | 三菱電機株式会社 | シリコン基板中に埋込絶縁膜を形成する方法 |
JP2607399B2 (ja) * | 1991-02-19 | 1997-05-07 | 日本電信電話株式会社 | 半導体基板の製造方法 |
JPH0547342A (ja) * | 1991-08-20 | 1993-02-26 | Nissin Electric Co Ltd | イオン注入制御装置 |
US5441899A (en) * | 1992-02-18 | 1995-08-15 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing substrate having semiconductor on insulator |
JPH05291543A (ja) * | 1992-04-15 | 1993-11-05 | Fujitsu Ltd | 半導体装置の製造方法 |
US5661043A (en) * | 1994-07-25 | 1997-08-26 | Rissman; Paul | Forming a buried insulator layer using plasma source ion implantation |
JP3204855B2 (ja) * | 1994-09-30 | 2001-09-04 | 新日本製鐵株式会社 | 半導体基板の製造方法 |
-
1993
- 1993-12-28 JP JP05337894A patent/JP3139904B2/ja not_active Expired - Lifetime
-
1994
- 1994-12-28 DE DE69432604T patent/DE69432604T2/de not_active Expired - Lifetime
- 1994-12-28 WO PCT/JP1994/002297 patent/WO1995018462A1/ja active IP Right Grant
- 1994-12-28 KR KR1019960703473A patent/KR100199125B1/ko not_active IP Right Cessation
- 1994-12-28 US US08/666,287 patent/US5918151A/en not_active Expired - Lifetime
- 1994-12-28 EP EP95904026A patent/EP0738004B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0738004A4 (de) | 1997-04-16 |
KR100199125B1 (ko) | 1999-06-15 |
JPH07201975A (ja) | 1995-08-04 |
US5918151A (en) | 1999-06-29 |
JP3139904B2 (ja) | 2001-03-05 |
WO1995018462A1 (fr) | 1995-07-06 |
DE69432604T2 (de) | 2004-04-01 |
EP0738004B1 (de) | 2003-05-02 |
EP0738004A1 (de) | 1996-10-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
R082 | Change of representative |
Ref document number: 738004 Country of ref document: EP Representative=s name: VOSSIUS & PARTNER, DE |