DE68916389D1 - Auf einer Halbleiterschicht gebildeter MOS-Feldeffekttransistor auf einem isolierenden Substrat. - Google Patents
Auf einer Halbleiterschicht gebildeter MOS-Feldeffekttransistor auf einem isolierenden Substrat.Info
- Publication number
- DE68916389D1 DE68916389D1 DE68916389T DE68916389T DE68916389D1 DE 68916389 D1 DE68916389 D1 DE 68916389D1 DE 68916389 T DE68916389 T DE 68916389T DE 68916389 T DE68916389 T DE 68916389T DE 68916389 D1 DE68916389 D1 DE 68916389D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor layer
- effect transistor
- insulating substrate
- transistor formed
- mos field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63315807A JP2510710B2 (ja) | 1988-12-13 | 1988-12-13 | 絶縁体基板上の半導体層に形成されたmos型電界効果トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68916389D1 true DE68916389D1 (de) | 1994-07-28 |
DE68916389T2 DE68916389T2 (de) | 1994-11-17 |
Family
ID=18069795
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68916389T Expired - Fee Related DE68916389T2 (de) | 1988-12-13 | 1989-12-12 | Auf einer Halbleiterschicht gebildeter MOS-Feldeffekttransistor auf einem isolierenden Substrat. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5040037A (de) |
EP (1) | EP0373893B1 (de) |
JP (1) | JP2510710B2 (de) |
DE (1) | DE68916389T2 (de) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5264721A (en) * | 1989-04-29 | 1993-11-23 | Fujitsu Limited | Insulated-gate FET on an SOI-structure |
JPH02291175A (ja) * | 1989-04-29 | 1990-11-30 | Fujitsu Ltd | 絶縁ゲート型電界効果トランジスタ |
GB2233822A (en) * | 1989-07-12 | 1991-01-16 | Philips Electronic Associated | A thin film field effect transistor |
EP0465961B1 (de) * | 1990-07-09 | 1995-08-09 | Sony Corporation | Halbleiteranordnung auf einem dielektrischen isolierten Substrat |
JPH0478215A (ja) * | 1990-07-18 | 1992-03-12 | Sony Corp | マスタースレーブ型フリップフロップ回路 |
US6008078A (en) * | 1990-07-24 | 1999-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
JP2940880B2 (ja) * | 1990-10-09 | 1999-08-25 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JPH04171766A (ja) * | 1990-11-05 | 1992-06-18 | Nec Corp | 薄膜soi―mosfet及びその製造方法 |
JP2660451B2 (ja) * | 1990-11-19 | 1997-10-08 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JPH04241466A (ja) * | 1991-01-16 | 1992-08-28 | Casio Comput Co Ltd | 電界効果型トランジスタ |
US5185280A (en) * | 1991-01-29 | 1993-02-09 | Texas Instruments Incorporated | Method of fabricating a soi transistor with pocket implant and body-to-source (bts) contact |
KR960001611B1 (ko) | 1991-03-06 | 1996-02-02 | 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 | 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법 |
US6713783B1 (en) | 1991-03-15 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Compensating electro-optical device including thin film transistors |
US6849872B1 (en) * | 1991-08-26 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
USH1435H (en) * | 1991-10-21 | 1995-05-02 | Cherne Richard D | SOI CMOS device having body extension for providing sidewall channel stop and bodytie |
US6624450B1 (en) | 1992-03-27 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
JPH0697185A (ja) * | 1992-09-17 | 1994-04-08 | Hitachi Ltd | 半導体装置 |
US5728592A (en) * | 1992-10-09 | 1998-03-17 | Fujitsu Ltd. | Method for fabricating a thin film transistor matrix device |
JP3456242B2 (ja) * | 1993-01-07 | 2003-10-14 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
US5719065A (en) | 1993-10-01 | 1998-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device with removable spacers |
US5593928A (en) * | 1993-11-30 | 1997-01-14 | Lg Semicon Co., Ltd. | Method of making a semiconductor device having floating source and drain regions |
JP3514500B2 (ja) * | 1994-01-28 | 2004-03-31 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
US6133620A (en) | 1995-05-26 | 2000-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and process for fabricating the same |
US6867432B1 (en) * | 1994-06-09 | 2005-03-15 | Semiconductor Energy Lab | Semiconductor device having SiOxNy gate insulating film |
KR0135147B1 (ko) * | 1994-07-21 | 1998-04-22 | 문정환 | 트랜지스터 제조방법 |
US5536959A (en) * | 1994-09-09 | 1996-07-16 | Mcnc | Self-aligned charge screen (SACS) field effect transistors and methods |
EP0735592A3 (de) * | 1995-03-31 | 1997-11-05 | Nippon Telegraph And Telephone Corporation | MOS-Dünnfilmtransistor und Herstellungsverfahren |
DE19544721C1 (de) * | 1995-11-30 | 1997-04-30 | Siemens Ag | Verfahren zur Herstellung einer integrierten Schaltungsanordnung mit mindestens einem MOS-Transistor |
US5681761A (en) * | 1995-12-28 | 1997-10-28 | Philips Electronics North America Corporation | Microwave power SOI-MOSFET with high conductivity metal gate |
JP3565983B2 (ja) * | 1996-04-12 | 2004-09-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
FR2750534B1 (fr) * | 1996-06-27 | 1998-08-28 | Commissariat Energie Atomique | Transistor et procede de realisation d'un transistor a contacts et a isolation de champ auto-alignes |
JP4014676B2 (ja) * | 1996-08-13 | 2007-11-28 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型半導体装置およびその作製方法 |
JP3260660B2 (ja) * | 1996-08-22 | 2002-02-25 | 株式会社東芝 | 半導体装置およびその製造方法 |
JPH1140811A (ja) * | 1997-07-22 | 1999-02-12 | Hitachi Ltd | 半導体装置およびその製造方法 |
US6078058A (en) * | 1998-03-05 | 2000-06-20 | International Business Machine Corporation | SOI floating body charge monitor circuit and method |
KR100321778B1 (ko) * | 1998-10-28 | 2002-03-08 | 박종섭 | 낮은접합커패시턴스를갖는에스오아이트랜지스터및그제조방법 |
US6539335B1 (en) | 1999-05-26 | 2003-03-25 | Bert W. Morris | Data collection and analysis aid |
JP2000349096A (ja) | 1999-06-01 | 2000-12-15 | Matsushita Electric Ind Co Ltd | 化合物電界効果トランジスタおよびその製造方法 |
JP4831885B2 (ja) | 2001-04-27 | 2011-12-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR100425462B1 (ko) * | 2001-09-10 | 2004-03-30 | 삼성전자주식회사 | Soi 상의 반도체 장치 및 그의 제조방법 |
US7115949B2 (en) | 2002-05-30 | 2006-10-03 | Freescale Semiconductor, Inc. | Method of forming a semiconductor device in a semiconductor layer and structure thereof |
AU2003299515A1 (en) * | 2002-05-30 | 2004-07-29 | Freescale Semiconductor, Inc. | Method of forming a semiconductor device in a semiconductor layer and structure thereof |
US7112856B2 (en) * | 2002-07-12 | 2006-09-26 | Samsung Electronics Co., Ltd. | Semiconductor device having a merged region and method of fabrication |
JP2006527496A (ja) * | 2003-06-11 | 2006-11-30 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 集積soiプロセスにおける寄生チャネル防止 |
JP2005191161A (ja) * | 2003-12-25 | 2005-07-14 | Oki Electric Ind Co Ltd | 半導体装置 |
JP5172083B2 (ja) * | 2004-10-18 | 2013-03-27 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法、並びにメモリ回路 |
JP2006173538A (ja) * | 2004-12-20 | 2006-06-29 | Oki Electric Ind Co Ltd | 半導体装置 |
JP2009266868A (ja) * | 2008-04-22 | 2009-11-12 | Oki Semiconductor Co Ltd | Mosfetおよびmosfetの製造方法 |
US7759205B1 (en) * | 2009-01-16 | 2010-07-20 | Advanced Micro Devices, Inc. | Methods for fabricating semiconductor devices minimizing under-oxide regrowth |
CN101872737A (zh) * | 2010-01-28 | 2010-10-27 | 中国科学院上海微系统与信息技术研究所 | 一种抑制soi浮体效应的mos结构及其制作方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS50147186A (de) * | 1974-05-16 | 1975-11-26 | ||
US4053916A (en) * | 1975-09-04 | 1977-10-11 | Westinghouse Electric Corporation | Silicon on sapphire MOS transistor |
JPS5852936B2 (ja) * | 1978-11-22 | 1983-11-26 | 三菱マテリアル株式会社 | 光伝送用素材の製造法 |
JPS56137674A (en) * | 1980-03-31 | 1981-10-27 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
JPS5727070A (en) * | 1980-07-25 | 1982-02-13 | Toshiba Corp | Mos type semiconductor device |
JPS5739579A (en) * | 1980-08-20 | 1982-03-04 | Toshiba Corp | Mos semiconductor device and manufacture thereof |
JPS5950562A (ja) * | 1982-09-17 | 1984-03-23 | Toshiba Corp | 半導体装置 |
JPS6088474A (ja) * | 1983-10-21 | 1985-05-18 | Seiko Epson Corp | 半導体装置 |
US4597824A (en) * | 1983-11-11 | 1986-07-01 | Kabushiki Kaisha Toshiba | Method of producing semiconductor device |
JPH0669094B2 (ja) * | 1983-12-23 | 1994-08-31 | ソニー株式会社 | 電界効果型トランジスタ |
JPS60263466A (ja) * | 1984-06-12 | 1985-12-26 | Agency Of Ind Science & Technol | Mos型半導体装置とその製造方法 |
US4763183A (en) * | 1984-08-01 | 1988-08-09 | American Telephone And Telegraph Co., At&T Bell Laboratories | Semiconductor-on-insulator (SOI) devices and SOI IC fabrication method |
FR2570880A1 (fr) * | 1984-09-27 | 1986-03-28 | Rca Corp | Procede de fabrication d'un transistor a effet de champ a grille isolee et transistor ainsi obtenu |
JPS62117372A (ja) * | 1985-11-18 | 1987-05-28 | Seiko Instr & Electronics Ltd | Misトランジスタ− |
US4775641A (en) * | 1986-09-25 | 1988-10-04 | General Electric Company | Method of making silicon-on-sapphire semiconductor devices |
JPH0687503B2 (ja) * | 1987-03-11 | 1994-11-02 | 株式会社日立製作所 | 薄膜半導体装置 |
US4797721A (en) * | 1987-04-13 | 1989-01-10 | General Electric Company | Radiation hardened semiconductor device and method of making the same |
JPH0728043B2 (ja) * | 1987-04-23 | 1995-03-29 | 工業技術院長 | 半導体装置 |
JPS6427272A (en) * | 1987-07-23 | 1989-01-30 | Agency Ind Science Techn | Semiconductor device |
JPH07107935B2 (ja) * | 1988-02-04 | 1995-11-15 | 株式会社東芝 | 半導体装置 |
-
1988
- 1988-12-13 JP JP63315807A patent/JP2510710B2/ja not_active Expired - Lifetime
-
1989
- 1989-12-11 US US07/448,119 patent/US5040037A/en not_active Expired - Lifetime
- 1989-12-12 EP EP89312990A patent/EP0373893B1/de not_active Expired - Lifetime
- 1989-12-12 DE DE68916389T patent/DE68916389T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE68916389T2 (de) | 1994-11-17 |
JPH02159767A (ja) | 1990-06-19 |
EP0373893A3 (de) | 1991-01-30 |
EP0373893A2 (de) | 1990-06-20 |
EP0373893B1 (de) | 1994-06-22 |
JP2510710B2 (ja) | 1996-06-26 |
US5040037A (en) | 1991-08-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |