DE60305736D1 - Speicherleseverstärker mit mindesten zwei bestimmten widerständen - Google Patents

Speicherleseverstärker mit mindesten zwei bestimmten widerständen

Info

Publication number
DE60305736D1
DE60305736D1 DE60305736T DE60305736T DE60305736D1 DE 60305736 D1 DE60305736 D1 DE 60305736D1 DE 60305736 T DE60305736 T DE 60305736T DE 60305736 T DE60305736 T DE 60305736T DE 60305736 D1 DE60305736 D1 DE 60305736D1
Authority
DE
Germany
Prior art keywords
conductance
memory
bit
cell
sense
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60305736T
Other languages
English (en)
Other versions
DE60305736T2 (de
Inventor
J Nahas
W Andre
J Garni
K Subramanian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Application granted granted Critical
Publication of DE60305736D1 publication Critical patent/DE60305736D1/de
Publication of DE60305736T2 publication Critical patent/DE60305736T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Amplifiers (AREA)
  • Semiconductor Memories (AREA)
  • Networks Using Active Elements (AREA)
  • Dram (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
  • Secondary Cells (AREA)
  • Laminated Bodies (AREA)
DE60305736T 2002-06-28 2003-05-01 Speicherleseverstärker mit mindestens zwei bestimmten Widerständen Expired - Lifetime DE60305736T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US184784 1980-09-08
US10/184,784 US6600690B1 (en) 2002-06-28 2002-06-28 Sense amplifier for a memory having at least two distinct resistance states
PCT/US2003/014261 WO2004003925A2 (en) 2002-06-28 2003-05-01 Sense amplifier for a memory having at least two distinct resistance states

Publications (2)

Publication Number Publication Date
DE60305736D1 true DE60305736D1 (de) 2006-07-06
DE60305736T2 DE60305736T2 (de) 2006-09-21

Family

ID=27612984

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60305736T Expired - Lifetime DE60305736T2 (de) 2002-06-28 2003-05-01 Speicherleseverstärker mit mindestens zwei bestimmten Widerständen

Country Status (10)

Country Link
US (1) US6600690B1 (de)
EP (1) EP1576610B1 (de)
JP (1) JP4283769B2 (de)
KR (1) KR20050013649A (de)
CN (1) CN1717741B (de)
AT (1) ATE328350T1 (de)
AU (1) AU2003230284A1 (de)
DE (1) DE60305736T2 (de)
TW (1) TWI299871B (de)
WO (1) WO2004003925A2 (de)

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JP4071531B2 (ja) * 2002-04-23 2008-04-02 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
KR100496858B1 (ko) * 2002-08-02 2005-06-22 삼성전자주식회사 비트라인 클램핑 전압에 상관없이 기준 셀로 일정 전류가흐르는 마그네틱 랜덤 억세스 메모리
FR2846776A1 (fr) * 2002-10-30 2004-05-07 St Microelectronics Sa Cellule memoire a trois etats
JP2004164766A (ja) * 2002-11-14 2004-06-10 Renesas Technology Corp 不揮発性記憶装置
JP4365604B2 (ja) * 2003-03-24 2009-11-18 Ｔｄｋ株式会社 磁気メモリデバイスおよびセンスアンプ回路、ならびに磁気メモリデバイスの読出方法
US6985383B2 (en) * 2003-10-20 2006-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Reference generator for multilevel nonlinear resistivity memory storage elements
KR100528341B1 (ko) * 2003-12-30 2005-11-15 삼성전자주식회사 자기 램 및 그 읽기방법
US7733729B2 (en) * 2004-04-01 2010-06-08 Nxp B.V. Thermally stable reference voltage generator for MRAM
US7038959B2 (en) * 2004-09-17 2006-05-02 Freescale Semiconductor, Inc. MRAM sense amplifier having a precharge circuit and method for sensing
US7423897B2 (en) * 2004-10-01 2008-09-09 Ovonyx, Inc. Method of operating a programmable resistance memory array
FR2878067B1 (fr) * 2004-11-17 2007-01-26 St Microelectronics Sa Dispositif de lecture faible tension notamment pour memoire mram
KR100684472B1 (ko) * 2005-02-18 2007-02-22 한국전자통신연구원 네거티브 전압 레벨 감지기
CN1937071B (zh) * 2005-09-22 2010-10-13 中芯国际集成电路制造(上海)有限公司 用于存储器系统的高性能读出放大器及相应的方法
US7292466B2 (en) * 2006-01-03 2007-11-06 Infineon Technologies Ag Integrated circuit having a resistive memory
US7333379B2 (en) * 2006-01-12 2008-02-19 International Business Machines Corporation Balanced sense amplifier circuits with adjustable transistor body bias
KR101008509B1 (ko) 2006-01-17 2011-01-17 브로드콤 코포레이션 파워 오버 이더넷 컨트롤러 집적 회로 아키텍처
US20070247939A1 (en) * 2006-04-21 2007-10-25 Nahas Joseph J Mram array with reference cell row and methof of operation
US7286429B1 (en) * 2006-04-24 2007-10-23 Taiwan Semiconductor Manufacturing Company, Ltd. High speed sensing amplifier for an MRAM cell
CN101427320B (zh) * 2006-04-24 2011-10-05 Nxp股份有限公司 存储电路以及用于对存储元件进行读出的方法
US7292484B1 (en) 2006-06-07 2007-11-06 Freescale Semiconductor, Inc. Sense amplifier with multiple bits sharing a common reference
WO2008007174A1 (en) * 2006-07-10 2008-01-17 Freescale Semiconductor, Inc. Memory circuit with sense amplifier
FR2904463A1 (fr) * 2006-07-27 2008-02-01 St Microelectronics Sa Programmation d'un circuit de retention de charges pour mesure temporelle
KR100759911B1 (ko) * 2006-10-24 2007-09-18 소코머쉬너리컴퍼니리미티드 공작물 클램핑 장치
JP4969999B2 (ja) * 2006-11-09 2012-07-04 株式会社東芝 磁気記憶装置
JP4896830B2 (ja) * 2007-07-03 2012-03-14 株式会社東芝 磁気ランダムアクセスメモリ
US7535783B2 (en) * 2007-10-01 2009-05-19 International Business Machines Corporation Apparatus and method for implementing precise sensing of PCRAM devices
JP2009087494A (ja) * 2007-10-02 2009-04-23 Toshiba Corp 磁気ランダムアクセスメモリ
US7679878B2 (en) * 2007-12-21 2010-03-16 Broadcom Corporation Capacitor sharing surge protection circuit
US7778065B2 (en) * 2008-02-29 2010-08-17 International Business Machines Corporation Method and apparatus for implementing concurrent multiple level sensing operation for resistive memory devices
JP5086919B2 (ja) * 2008-06-30 2012-11-28 株式会社東芝 半導体記憶装置
US8228714B2 (en) * 2008-09-09 2012-07-24 Qualcomm Incorporated Memory device for resistance-based memory applications
US8184476B2 (en) * 2008-12-26 2012-05-22 Everspin Technologies, Inc. Random access memory architecture including midpoint reference
US8254195B2 (en) * 2010-06-01 2012-08-28 Qualcomm Incorporated High-speed sensing for resistive memories
US8743630B2 (en) * 2011-05-23 2014-06-03 Infineon Technologies Ag Current sense amplifier with replica bias scheme
US9042152B2 (en) * 2011-08-25 2015-05-26 Samsung Electronics Co., Ltd. Data read circuit, a non-volatile memory device having the same, and a method of reading data from the non-volatile memory device
KR102115440B1 (ko) * 2012-11-14 2020-05-27 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그의 구동방법
US9384792B2 (en) 2014-04-09 2016-07-05 Globalfoundries Inc. Offset-cancelling self-reference STT-MRAM sense amplifier
US9373383B2 (en) 2014-09-12 2016-06-21 International Business Machines Corporation STT-MRAM sensing technique
US9343131B1 (en) 2015-02-24 2016-05-17 International Business Machines Corporation Mismatch and noise insensitive sense amplifier circuit for STT MRAM
US9666258B2 (en) 2015-08-11 2017-05-30 International Business Machines Corporation Bit line clamp voltage generator for STT MRAM sensing
US10170182B2 (en) * 2016-03-16 2019-01-01 Imec Vzw Resistance change memory device configured for state evaluation based on reference cells
US9799386B1 (en) 2016-08-30 2017-10-24 International Business Machines Corporation STT MRAM midpoint reference cell allowing full write
US9786343B1 (en) 2016-08-30 2017-10-10 International Business Machines Corporation STT MRAM common source line array bias scheme
US10224088B1 (en) * 2018-02-12 2019-03-05 Nxp Usa, Inc. Memory with a global reference circuit
US10930344B2 (en) * 2018-06-01 2021-02-23 Taiwan Semiconductor Manufacturing Company Ltd. RRAM circuit and method
US10574469B1 (en) 2019-04-10 2020-02-25 Nxp Usa, Inc. Physically unclonable function and method for generating a digital code
CN113160859B (zh) * 2021-03-31 2021-12-14 珠海博雅科技有限公司 灵敏放大器及存储器
KR102382563B1 (ko) 2022-01-03 2022-04-01 주식회사 금용 염화칼슘 살포를 겸한 차량전방 살수식 염수제설기
KR102640435B1 (ko) 2023-01-31 2024-02-23 변정훈 염수분사 노즐을 구성한 제설판

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FR2694119B1 (fr) * 1992-07-24 1994-08-26 Sgs Thomson Microelectronics Circuit de lecture pour mémoire, avec recharge et équilibrage avant lecture.
EP0681293B1 (de) * 1994-05-03 2001-03-28 STMicroelectronics S.r.l. Abfühlverstärker mit Hysteresis
JPH08255487A (ja) * 1995-03-17 1996-10-01 Fujitsu Ltd 半導体記憶装置
EP0805454A1 (de) * 1996-04-30 1997-11-05 STMicroelectronics S.r.l. Abtastschaltung zum Lesen und Nachprüfen eines Speicherzelleninhalts
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IT1298939B1 (it) * 1998-02-23 2000-02-07 Sgs Thomson Microelectronics Amplificatore di rilevamento statico a retroazione per memorie non volatili
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US6317376B1 (en) * 2000-06-20 2001-11-13 Hewlett-Packard Company Reference signal generation for magnetic random access memory devices
US6269040B1 (en) * 2000-06-26 2001-07-31 International Business Machines Corporation Interconnection network for connecting memory cells to sense amplifiers
US6538940B1 (en) * 2002-09-26 2003-03-25 Motorola, Inc. Method and circuitry for identifying weak bits in an MRAM

Also Published As

Publication number Publication date
US6600690B1 (en) 2003-07-29
ATE328350T1 (de) 2006-06-15
DE60305736T2 (de) 2006-09-21
TW200405357A (en) 2004-04-01
EP1576610B1 (de) 2006-05-31
EP1576610A2 (de) 2005-09-21
JP4283769B2 (ja) 2009-06-24
WO2004003925A2 (en) 2004-01-08
AU2003230284A1 (en) 2004-01-19
WO2004003925A3 (en) 2005-07-28
CN1717741A (zh) 2006-01-04
AU2003230284A8 (en) 2004-01-19
JP2006505082A (ja) 2006-02-09
KR20050013649A (ko) 2005-02-04
CN1717741B (zh) 2011-06-22
TWI299871B (en) 2008-08-11

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Legal Events

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8364 No opposition during term of opposition